Abstract: Methods for forming a predetermined pattern of catalytic regions having nanoscale dimensions are provided for use in the growth of nanowires. The methods include one or more nanoimprinting steps to produce arrays of catalytic nanoislands or nanoscale regions of catalytic material circumscribed by noncatalytic material.

Abstract: A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a barrier layer is provided to protect a molecular layer sandwiched between a bottom wire layer and a top wire layer from degradation during patterning of the top wire layer. A molecular electronic device structure and a memory system that are formed from this fabrication process are described.

Abstract: An electromagnetic coaxial driving injection apparatus, having a linear motor for driving injection and a rotation motor for metering. The linear motor and the rotation motor of both the injection and metering motors and an injection screw are set on a common axis. A connecting device connects moving parts of the motors with the injection screw. Stationary parts of the motors are fastened on a frame and forward-backward moving unit, not moving during injection and metering. Due to the arrangement of the moving parts and the injection screw on a single axis, moving parts are lessened, and transmission losses are minimized. Since the number of structural parts is low, only the moving parts of the motors move during injection while the stationary parts thereof remain at rest, thus greatly reducing inertia.

Abstract: A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a passivation layer is provided to protect a molecular layer from degradation during patterning of the top wire layer. A molecular electronic device structure and a memory system that are formed from this fabrication process are described.

Abstract: A method for forming first and second linear structures of a first composition that meet at right angles, there being a gap at the point at which the structures meet. The linear structures are constructed on an etchable crystalline layer having the first composition. First and second self-aligned nanowires of a second composition are grown on this layer and used as masks for etching the layer. The self-aligned nanowires are constructed from a material that has an asymmetric lattice mismatch with respect to the crystalline layer. The gap is sufficiently small to allow one of the structures to act as the gate of a transistor and the other to form the source and drain of the transistor. The gap can be filled with electrically switchable materials thereby converting the transistor to a memory cell.

Abstract: In solid freeform fabrication processes that make use of a removable support material, pre-calculation of the amount of support material needed for a build is difficult (inaccurate or slow) because the digital data for generating the support material is often not generated until the build is in progress. A method is proposed that has been shown to generate rapid and accurate estimates of the amount of both build and support material needed before a build begins, to accurately predict before a build begins when replenishment materials are needed, and to track material consumptions over time.

Abstract: A polarization-dependent device is provided that includes organic materials having electric dipoles. The polarization-dependent device comprises: (a) a source region and a drain region separated by a channel region having a length L, formed on a substrate; (b) a dielectric layer on at least a portion of the channel region; and (c) a molecular layer on the dielectric layer, the molecular layer comprising molecules having a switchable dipolar moiety. Addition of a gate over the molecular layer permits fabrication of a transistor, while omission of the gate, and utilization of suitable molecules that are sensitive to various changes in the environment permits fabrication of a variety of sensors. The molecular transistor and sensors are suitable for high density nanoscale circuits and are less expensive than prior art approaches.

Abstract: A lift cord concealable Venetian blind lift control mechanism is constructed to include a base having two hollow screw rods axially aligned at two sides and selectively mounted in the top or bottom rail of a Venetian blind, a revolving rod inserted through the hollow screw rods, a spring member, which provides a torsional force to the revolving rod, two bobbins respectively threaded onto the screw rods for synchronous rotation with the revolving rod. The left and right lift cords of the Venetian blind each have one end connected to the bottom or top rail and the other end fastened to the bobbin such that when the bottom rail of the Venetian blind lifted or lowered by an external force, the bobbins are synchronously rotated to wind up or let off the lift cords; when the external force disappeared, the bobbins are immovable, keeping the bottom rail in position.

Abstract: Self-assembled nanowires are provided, comprising nanowires of a first crystalline composition formed on a substrate of a second crystalline composition. The two crystalline materials are characterized by an asymmetric lattice mismatch, in which in the interfacial plane between the two materials, the first material has a close lattice match (in any direction) with the second material and has a large lattice mismatch in all other major crystallographic directions with the second material. This allows the unrestricted growth of the epitaxial crystal in the first direction, but limits the width in the other.

Abstract: A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a passivation layer is provided to protect a molecular layer from degradation during patterning of the top wire layer. A molecular electronic device structure and a memory system that are formed from this fabrication process are described.

Abstract: A method for forming first and second linear structures of a first composition that meet at right angles, there being a gap at the point at which the structures meet. The linear structures are constructed on an etchable crystalline layer having the first composition. First and second self-aligned nanowires of a second composition are grown on this layer and used as masks for etching the layer. The self-aligned nanowires are constructed from a material that has an asymmetric lattice mismatch with respect to the crystalline layer. The gap is sufficiently small to allow one of the structures to act as the gate of a transistor and the other to form the source and drain of the transistor. The gap can be filled with electrically switchable materials thereby converting the transistor to a memory cell.

Abstract: A lift cord concealable Venetian blind lift control mechanism is constructed to include a base having two hollow screw rods axially aligned at two sides and selectively mounted in the top or bottom rail of a Venetian blind, a revolving rod inserted through the hollow screw rods, a spring member, which provides a torsional force to the revolving rod, two bobbins respectively threaded onto the screw rods for synchronous rotation with the revolving rod. The left and right lift cords of the Venetian blind each have one end connected to the bottom or top rail and the other end fastened to the bobbin such that when the bottom rail of the Venetian blind lifted or lowered by an external force, the bobbins are synchronously rotated to wind up or let off the lift cords; when the external force disappeared, the bobbins are immovable, keeping the bottom rail in position.

Abstract: An information handling system is provided which includes a wired network controller fixedly mounted in the system and an optional wireless network card which is pluggably receivable by a connector in the system. The system includes a first indicator for annunciating network activity and a second indicator for annunciating that the link is good as well as its link rate. Status processing logic is situated between the wireless card connector, the network controller and the first and second indicators to permit the wireless card and the network controller to share the first and second indicators.

Abstract: A system that includes a video controller and a switching circuit. The switching circuit is configured to receive an input signal associated with an operating system processable by the system and provide a first power signal or a second power signal to the video controller in response to the input signal.

Abstract: A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a barrier layer is provided to protect a molecular layer sandwiched between a bottom wire layer and a top wire layer from degradation during patterning of the top wire layer. A molecular electronic device structure and a memory system that are formed from this fabrication process are described.

Abstract: A technique is provided for forming a molecule or an array of molecules having a defined orientation relative to the substrate or for forming a mold for deposition of a material therein. The array of molecules is formed by dispersing them in an array of small, aligned holes (nanopores), or mold, in a substrate. Typically, the material in which the nanopores are formed is insulating. The underlying substrate may be either conducting or insulating. For electronic device applications, the substrate is, in general, electrically conducting and may be exposed at the bottom of the pores so that one end of the molecule in the nanopore makes electrical contact to the substrate. A substrate such as a single-crystal silicon wafer is especially convenient because many of the process steps to form the molecular array can use techniques well developed for semiconductor device and integrated-circuit fabrication.

Abstract: A method of fabricating a molecular electronic device or crossbar memory device is provided. The device comprises at least one pair of crossed wires and a molecular switch film therebetween. The method comprises: (a) forming at least one bottom electrode on a substrate by first forming a first layer on the substrate and patterning the first layer to form the bottom electrode by an imprinting technique; (b) forming the molecular switch film on top of the bottom electrode; (c) optionally forming a protective layer on top of the molecular switch film to avoid damage thereto during further processing; (d) coating a polymer layer on top of the protective layer and patterned the polymer layer by the imprinting method to form openings that expose portions of the protective layer; and (e) forming at least one top electrode on the protective layer through the openings in the polymer layer by first forming a second layer on the polymer layer and patterning the second layer.

Abstract: Configurable electronic circuits comprise arrays of cross-points of one layer of metal/semiconductive nanoscale lines crossed by a second layer of metal/semiconductive nanoscale lines, with a configurable layer between the lines. Methods are provided for altering the thickness and/or resistance of the configurable layer by oxidation or reduction methods, employing a solid material as the configurable layer. Specifically a method is provided for configuring nanoscale devices in a crossbar array of configurable devices comprising arrays of cross-points of a first layer of nanoscale lines comprising a first metal or a first semiconductor material crossed by a second layer of nanoscale lines comprising a second metal or a second semiconductor material.