Abstract: A photomask cleaning apparatus including a stage supporting a photomask, a cleaning fluid supplying unit configured to supply a cleaning fluid to remove contaminants from the photomask, a cleaning fluid absorbing unit configured to absorb the cleaning fluid supplied from the cleaning fluid supplying unit; and a contaminant removing structure configured to provide a path through which the cleaning fluid flows between the cleaning fluid supplying unit and the cleaning fluid absorbing unit through a surface of the photomask on the stage, and to have an opening aperture through which the cleaning fluid is exposed onto the surface of the photomask so as to remove at least some of the contaminants is provided. Methods of cleaning a photomask are also provided.

Abstract: An apparatus and method for performing sequential scheduling in a multiple-input, multiple-output (MIMO) system is provided. The method includes the steps of: selecting a user which reports the greatest partial feedback information among a plurality of pieces of partial feedback information of all users in an initialization operation, and requesting channel feedback information to the selected user; and broadcasting the channel feedback information of the selected user to remaining unselected users upon receiving the channel feedback information from the selected user. Accordingly, a maximum capacity can be obtained by using only selective channel feedback information without having to feed back channel state information of all users.

Abstract: Transistors having a high carrier mobility and devices incorporating the same are fabricated by forming a preliminary semiconductor layer in a semiconductor substrate at both sides of a gate pattern. A source/ drain semiconductor layer having a heterojunction with the semiconductor substrate is formed by irradiating a laser beam onto the preliminary semiconductor layer. The source/drain semiconductor layer is formed in a recrystallized single crystal structure.

Abstract: A method for adaptively allocating resource can be simply implemented for reducing degradation of performance by effectively separating operations of sub-channel and time slot allocation and selection of modulation method and sequentially processing each of operations. A method for adaptively allocating resource in a communication system to sequentially process sub-carrier/time slot allocation and modulation method selection efficiently includes the step of a) computing average channel gains of sub-carriers/time slots for each user by using channel gains of sub-carriers/time slots for each user; b) computing average numbers of bits for each user by using required data rates and average channel gains of sub-carriers/time slots for each user; c) computing the number of sub-carriers/time slots allocated to each user and allocating the sub-carriers/time slots to each user; and d) selecting a modulation method with respect to each sub-carrier/time slot.

Abstract: A resource allocation method in a multiuser-multiple-input multiple-output/orthogonal frequency division multiple access (MIMO/OFDMA) system. In the multiuser-MIMO/OFDMA system feedback information is received from terminals. A channel gain and a transmission rate for each user are determined using the feedback information. An average channel gain for each user is computed according to the channel gain. The average number of bits for each user is determined according to the average channel gain. The number of subchannels for each user is computed according to the average number of bits for each user. At least one subchannel is allocated to each user according to the number of subchannels for each user. A modulation scheme for each of the at least one subchannel is determined. The resource allocation method adaptively allocates subchannels and bits according to channel environment, thereby considerably improving frequency use efficiency as well as a power gain.

Abstract: First and second preliminary epitaxial layers are grown from single-crystalline seeds in openings in an insulation layer until the first and second epitaxial layers are connected to each other. While the first and second preliminary epitaxial layers are being grown, a connection structure of a material having an amorphous state is formed on a portion of the insulation layer located between the first and second preliminary epitaxial layers. The material having an amorphous state is then changed into material having a single-crystalline state. Thus, portions of the first and second epitaxial layers are connected to each other through the connection structure so that the epitaxial layers and the connection structure constitute a single-crystalline structure layer that is free of voids for use as a channel layer or the like of a semiconductor device.

Abstract: Methods of manufacturing semiconductor devices having at least one single crystal silicon layer are provided. Pursuant to these methods, a first seed layer that includes silicon is formed. A first non-single crystalline silicon layer is then formed on the first seed layer. The first non-single crystalline silicon layer is irradiated with a laser to transform the first non-single crystalline silicon layer into a first single crystalline silicon layer. Corresponding semiconductor devices are also disclosed.

Abstract: Integrated circuit devices are provided including a first single-crystalline layer and an insulating layer pattern on the first single-crystalline layer. The insulating layer pattern has an opening therein that partially exposes the first single-crystalline layer. A seed layer is in the opening. A second single-crystalline layer is on the insulating layer pattern and the seed layer. The second single-crystalline layer has a crystalline structure substantially the same as that of the seed layer. A transcription-preventing pattern is on the second single-crystalline layer and a third single-crystalline layer on the transcription-preventing pattern and the second single-crystalline layer. The transcription-preventing pattern is configured to limit transcription of defective portions in the second single-crystalline layer into the third single-crystalline layer.

Abstract: A regulator and a method for regulating include sensing an input voltage at a sensing unit and outputting a sensed voltage to a sensed voltage node. A bypassing unit receives the input voltage, bypassing the sensing unit, and applies the input voltage to the sensed voltage node. A comparison unit compares a the sensed voltage from the sensed voltage node to a reference voltage and outputs a comparison result signal.

Abstract: In a method of manufacturing a semiconductor device, an insulating layer pattern defining at least one opening partially exposing a semiconductor substrate is formed on a semiconductor substrate including a single crystalline material. An amorphous thin layer is formed on the insulating layer pattern to fill up the opening. The amorphous thin layer is transformed into a single crystalline thin layer by providing the amorphous thin layer with a laser beam having sufficient energy to melt the amorphous thin layer. Here, the semiconductor substrate partially exposed through the opening is used as a seed. A gate pattern is formed on the single crystalline thin layer. Source/drain regions are formed at surface portions of the single crystalline thin layer adjacent to both sidewalls of the gate pattern.

Abstract: Disclosed is an adaptive receiving MIMO (multi input and multi output) system and method which decides a symbol detecting order so as to estimate the symbol having the minimum summation of weights of least square errors at the time of estimating the symbol for respective equalizers provided in parallel by the number of transmit antennas, and updates filter tap coefficients based on the RLS algorithm according to the detecting orders. Therefore, the filter tap coefficients are directly updated without tracking channels in the time-varying channel environment, and accordingly, detection performance very similar to those of the channel tracking and conventional V-BLAST scheme is provided with reduced complexity.

Abstract: A dynamic resource allocation apparatus and method for assigning timeslot in a return channel in multi-frequency time division multiple access MF-TDMA in order to have a maximum throughput is disclosed. The apparatus includes: resource request amount collection unit for accumulating a requested resource amount corresponding to each of terminals during a super-frame period; resource request amount processing unit for dividing an accumulated requested resource amount by the number of frame pairs in a super frame and storing a sum of a result of dividing and rounding up a remain of the division to a nearest integer as a request amount of each corresponding terminal; and resource allocation unit for deciding a time slot allocated at each of terminals corresponding to a frame pair based on optimal allocation amount, which is decided based on the request amount by the requested amount processing unit.

Abstract: An information processing system operating in response to a remote control signal transmitted from a remote controller, the information processing system including a remote signal receiver to receive the remote control signal; an interrupt generator to generate a system management interrupt signal when receives the remote control signal by the remote signal receiver; and a controller to process the remote control signal received by the remote signal receiver and to control the information processing system to operate in correspondence to the remote control signal when the interrupt generator generates the system management interrupt signal.

Abstract: An apparatus for controlling black stretch includes a black stretching unit, an offset adjusting unit and an output unit. The black stretching unit performs black stretch processing on a video signal less than or equal to the maximum value of a black stretch control range in response to a slope of black stretch. The slope of black stretch corresponds to a region between a minimum value and a maximum value of the black stretch control range. The offset adjusting unit adjusts an offset of the black-stretched video signal. The output unit outputs an output video signal corresponding to the offset-adjusted video signal when the offset-adjusted video signal has a positive value in a region less than or equal to the minimum value, and outputs the output video signal corresponding to 0 when the offset-adjusted video signal has a negative value in the region less than or equal to the minimum value.

Abstract: A high voltage generator includes a charge pump generating a high voltage in response to a pumping clock signal, a charge/discharge circuit responsive to the pumping clock signal and charging the high voltage to generate an output voltage, a comparator for comparing the output voltage with a reference voltage to generate a comparison result, and a clock modification circuit adjusting a pumping slope of the charge pump in relation to the comparison result, wherein the clock modification circuit reduces the pumping slope when the high voltage reaches a target voltage level.

Abstract: A heated eyelash curler comprise a curling head portion having an arcuate top surface on one end and a protection case on the other end. The protection case serves as a handle and also encloses the power source. A heating element is laid on the arcuate top surface caged inside a plurality of bridges or protected between protruding comblike spikes. The curler includes a pigmented silicone piece which changes in color corresponding to the temperature of the heating element as indicator. The heating element comprises a conducting coil or wire in zigzag configuration inserted into a conducting tube. The circuitry includes a converter for boosting the voltage of the power source which hastens the rise in temperature of the heating element and this in combination with the heating element having the conducting coil or wire in zigzag configuration, provide a more stable and even heating.

Abstract: Methods for forming semiconductor devices are provided. A semiconductor substrate is etched such that the semiconductor substrate defines a trench and a preliminary active pattern. The trench has a floor and a sidewall. An insulating layer is provided on the floor and the sidewall of the trench and a spacer is formed on the insulating layer such that the spacer is on the sidewall of the trench and on a portion of the floor of the trench. The insulating layer is removed on the floor of the trench and beneath the spacer such that a portion of the floor of the trench is at least partially exposed, the spacer is spaced apart from the floor of the trench and a portion of the preliminary active pattern is partially exposed. A portion of the exposed portion of the preliminary active pattern is partially removed to provide an active pattern that defines a recessed portion beneath the spacer. A buried insulating layer is formed in the recessed portion of the active pattern. Related devices are also provided.

Abstract: Methods of fabricating a semiconductor device are provided. A semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A thin layer is formed on the semiconductor substrate. The thin layer is patterned to form a plurality of spaced apart field structures and to expose therebetween portions of the semiconductor substrate having the single crystalline structure. A non-crystalline layer is formed on the exposed portions of the semiconductor substrate having the single crystalline structure. The non-crystalline layer is planarized to expose upper surfaces of the field structures and define non-crystalline active structures from the non-crystalline layer between the field structures. A laser beam is generated that heats the non-crystalline active structures to change them into single crystalline active structures having substantially the same single crystalline structure as the defined region of the semiconductor substrate.