Abstract: A method of measuring a critical dimension may include forming an object pattern on a substrate and forming a plurality of reference patterns on the substrate, wherein each of the plurality of reference patterns has a different critical dimension. An optical property of each of the plurality of reference patterns may be measured to provide a respective measured optical property for each of the reference patterns, and an optical property of the object pattern may be measured to provide a measured optical property of the object pattern. The measured optical property of the object pattern may be compared with the measured optical properties of the reference patterns, and a critical dimension of the object pattern may be determined as being the same as the critical dimension of the reference pattern having the measured optical property that is closest to the measured optical property of the object pattern. Related devices are also discussed.

Abstract: The present invention relates to a file construction for mobile communication device including an execution segment in form of machine language codes and a file execution method using the same, whereby a file in accordance with the present invention comprises a header, a file execution segment formed in machine language codes, and a resource segment to be selected by languages; wherein the header includes data for performing one or more of the functions of: 1) verifying reliability/validity of the file, 2) restricting use of the file (by period of the use, by times of the use), and 3) automatic updating of the file.

Abstract: An electronic information system comprises an external storage device and an application processor. The external storage device stores boot code and the application processor is adapted to receive the boot code from the external storage device and to perform a system booting operation during a power-up operation by executing the boot code.

Abstract: An eyelash curler made of a polymeric material such as plastic or of a non-temperature conducting, light but sturdy and durable material comprising a head section and a body section. The head section includes a curling component having a back side and a front side where an eyelash to be curled is introduced. The curling component has a metal blade at its forming member to form better curls than a plastic blade. The lower end of the body section serves as the handle for the device. A push button controls the curling component and is situated at a position opposite the front side of the curling component thereby preventing the push button from contacting the face of a user.

Abstract: An apparatus and method for implementing SDMA in a multi-user multi-antenna system are provided, in which SDMA users are selected from among total users according to channel state information of the total users, and the number of transmission streams to be allocated to each of the SDMA users is determined by a tree search method.

Abstract: A method of fabricating a semiconductor device includes forming an insulation layer structure on a single-crystalline silicon substrate, forming a first insulation layer structure pattern comprising a first opening by etching a portion of the insulation layer structure, filling the first opening with a non-single-crystalline silicon layer, and forming a single-crystalline silicon pattern by irradiating a first laser beam onto the non-single-crystalline silicon layer. The method also includes forming a second insulation layer structure pattern comprising a second opening by etching a portion of the first insulation layer structure, filling the second opening with a non-single-crystalline silicon-germanium layer, and forming a single-crystalline silicon-germanium pattern by irradiating a second laser beam onto the non-single-crystalline silicon-germanium layer.

Abstract: In some methods of fabricating a silicon-on-insulator substrate, a semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A first insulating film is formed on the defined region of the semiconductor substrate with an opening that exposes a portion of the defined region of the semiconductor substrate having the single crystalline structure. A first non-single crystalline film is formed on the exposed portion of the semiconductor substrate and that at least substantially fills the opening in the first insulating film. A laser beam is generated that heats the first non-single crystalline film to change the first non-single crystalline film into a first single crystalline film having substantially the same single crystalline structure as the defined region of the semiconductor substrate.

Abstract: In a method of forming a single crystalline semiconductor layer, an amorphous layer may be formed on a seed layer that includes a single crystalline material. The single crystalline layer may be formed from the amorphous layer by irradiating a laser beam onto the amorphous layer using the seed layer as a seed for a phase change of the amorphous layer. The laser beam may have an energy for melting the amorphous layer, and the laser beam may be irradiated onto the amorphous layer without generating a superimposedly irradiated region of the amorphous layer. The single crystalline layer may include a high density of large-sized grains without generating a protrusion thereon through a simple process so that a semiconductor device including the single crystalline layer may have a high degree of integration and improved electrical characteristics.

Abstract: An apparatus and method for determining a beamforming vector in a codebook-based transmission beamforming system are provided. In a feedback method for a receiver in a codebook-based transmission beamforming system, forthcoming channel values for a forthcoming period are generated using M present and previous channel estimates. Effective channel gains for all transmission beamforming vectors included in a codebook are calculated using the forthcoming channel values. A codebook index corresponding to the maximum effective channel gains is fed back to a transmitter.

Abstract: Provided are a system and a method for transmitting/receiving data in a communication system. The method includes calculating a processing matrix of a transmission unit for transmitting data, a processing matrix of a reception unit for receiving the data, a channel matrix formed by a plurality of transmission antennas and a plurality of reception antennas, and a parameter of the transmission data, when the data to be transmitted to the plurality of reception antennas via the plurality of transmission antennas is generated; determining a minimum value of a Minimum Mean Square Error (MMSE) according to the calculated matrixes and parameter; and transmitting/receiving the data using an MMSE multiplexing scheme based on the determined minimum MMSE value.

Abstract: A method and apparatus for improving the transition characteristic of a chrominance signal. The method and apparatus generate an edge-improved chrominance signal using a differential signal of a luminance signal and a differential signal of the chrominance signal and generate a transition-improved chrominance signal by removing an undershoot and overshoot of the edge-improved chrominance signal.

Abstract: A disk cartridge includes a case accommodating a disk, a cover installed at the case to be capable of being open and shut and having a hole formed thereon to be open to an outside of the cover, a shutter installed under the disk in the case to be capable of moving to open and shut an opening formed on the case, and a clamping member installed at the cover to seal the hole to clamp the disk. Thus, since the clamping member blocks the hole of the cover connected to the outside of the cover, possibility of intrusion of dust into the disk cartridge is reduced. Also, since there is no need to install the clamping member at the disk drive, the disk drive can be made simplified and slim.

Abstract: A method of forming a semiconductor device may include forming a fin structure extending from a substrate. The fin structure may include first and second source/drain regions and a channel region therebetween, and the first and second source/drain regions may extend a greater distance from the substrate than the channel region. A gate insulating layer may be formed on the channel region, and a gate electrode may be formed on the gate insulating layer so that the gate insulating layer is between the gate electrode and the channel region. Related devices are also discussed.

Abstract: Disclosed is a positive active material for a lithium secondary battery and a preparation method of the same that can improve cycle-life characteristics and storage characteristics at a high temperature by improving structural safety characteristics and electrochemical characteristics, by forming an overlayer comprising an oxide glass phase on the surface of the positive active material, and a lithium secondary battery comprising the positive active material.

Abstract: A method of forming a layer, including forming an insulation layer having an opening on a single crystalline substrate, the opening partially exposing an upper face of the substrate, forming a first seed layer in the opening, converting an upper portion of the first seed layer to a first amorphous layer, converting the first amorphous layer to a second seed layer, forming a second amorphous layer on the second seed layer, and converting the second amorphous layer to a single crystalline layer.

Abstract: Non-volatile memory devices according to embodiments of the present invention include an EEPROM transistor in a first portion of a semiconductor substrate, an access transistor in a second portion of the semiconductor substrate and an erase transistor in a third portion of the semiconductor substrate. The second portion of the semiconductor substrate extends adjacent a first side of the first portion of the semiconductor substrate and the third portion of the semiconductor substrate extends adjacent a second side of the first portion of the semiconductor substrate. The first and second sides of the first portion of the semiconductor substrate may be opposite sides of the first portion of the semiconductor substrate. The access transistor has a first source/drain terminal electrically connected to a first source/drain terminal of the EEPROM transistor and the erase transistor has a first source/drain terminal electrically connected to a second source/drain terminal of the access transistor.

Abstract: A unit for preventing a substrate from drying includes a transfer arm for transferring a substrate from a first bath containing a first cleaning solution to a second bath containing a second cleaning solution, a spraying part connected to the transfer arm, wherein the spraying part sprays a drying prevention solution from an upper portion of the substrate to a lower portion of the substrate, and a drainage container connected to the transfer arm, wherein the drainage container receives the drying prevention solution.

Abstract: A disk drive including a tray on which a disk cartridge is mounted and is loaded into and unloaded from a main body; a guide formed on the tray; and an opening and closing member installed to be elastically connected to the guide. The opening and closing member has a second gear that rotates a rotating wheel by meshing with a first gear; and a first protrusion formed on one end of a second gear and to temporarily rotate the rotating wheel so that the first and second gears can mesh. The guide pushes the first protrusion during loading/unloading of the tray so that the first protrusion and the latch do not come in contact with each other.

Abstract: This invention relates to complex lithium metal oxides, which are cathode active materials of a lithium or lithium ion secondary battery with enhanced cycle life and safety, and a process for preparation thereof. The core particles are complex lithium metal oxides capable of absorbing, storing and emitting lithium ions, and a coating layer comprised of amorphous complex lithium cobalt oxides that are formed on the surface of the core particle, which is structurally stable and inactive with electrolytes. Because the amorphous complex lithium cobalt oxides are inactive with electrolytes, the oxides stabilize the surface structure of the complex lithium metal oxide and improve on high temperature storage properties, as well as safety and cycle life.

Abstract: First and second preliminary epitaxial layers are grown from single-crystalline seeds in openings in an insulation layer until the first and second epitaxial layers are connected to each other. While the first and second preliminary epitaxial layers are being grown, a connection structure of a material having an amorphous state is formed on a portion of the insulation layer located between the first and second preliminary epitaxial layers. The material having an amorphous state is then changed into material having a single-crystalline state. Thus, portions of the first and second epitaxial layers are connected to each other through the connection structure so that the epitaxial layers and the connection structure constitute a single-crystalline structure layer that is free of voids for use as a channel layer or the like of a semiconductor device.