Abstract: The present invention relates to an array antenna apparatus, comprising: a first antenna element arranged in the center of the outermost concentric circle having a radius determined according to the beam width of a beam to transmit; and antenna element sets arranged on the circumference of each of concentric circles arranged to have a predetermined interval within the outermost concentric circle, wherein each of the antenna element sets comprises an odd number of second antenna elements, and only one antenna element exists on a straight line corresponding to the radius.

Abstract: The present invention relates to an aluminum-resin composite and provides the aluminum-resin composite which is excellent in adhesive property between metal and resin and is applicable to a continuous production process such as a wire production process. Specifically, the present invention uses the aluminum-resin composite including a metal made of aluminum or an aluminum alloy and resin adhering to the metal via an alumina nanoporous layer formed on a surface of the metal. The alumina nanoporous layer contains alumina nanoparticles of 5 nm to 10 nm in average particle diameter and holes three-dimensionally communicating with one another.

Abstract: The present invention relates to a copper-resin composite body and provides the copper-resin composite body which is excellent in adhesive property between copper and resin and is applicable to a continuous production process such as a wire production process. The present invention uses the copper-resin composite body including a metal made of copper or a copper alloy and resin adhering to the metal via a nanoporous layer formed on a surface of the metal. It is preferable that the nanoporous layer contains copper-oxide particles of 5 nm to 500 nm in average particle diameter. Further, a process for producing the copper-resin composite body includes a process for forming a copper-oxide nanoporous layer on the surface of the metal made of copper or the copper alloy by irradiating the surface of the metal with laser and a process for forming resin on the copper-oxide nanoporous layer.

Abstract: Semiconductor packages, module substrates and semiconductor package modules having the same are provided. The semiconductor package module includes a module substrate provided with a plurality of signal wires on an upper surface thereof, a package substrate disposed on the module substrate, a semiconductor chip disposed on one surface of the package substrate, and a plurality of external connection terminals disposed on another surface of the package substrate.

Abstract: A semiconductor package includes a substrate in which a plurality of wires are formed; at least one semiconductor chip electrically connected to portions of the plurality of wires; and a shielding can mounted on the substrate, surrounding the at least one semiconductor chip, electrically connected to at least one wire of the plurality of wires and including a soft magnetic material. The semiconductor package can prevent or substantially reduce electromagnetic interference (EMI).

Abstract: A semiconductor chip including a substrate, a first data pad arranged on the substrate, and a first control/address pad arranged on the substrate, wherein the first data pad is arranged in an edge region of the substrate, and the first control/address pad is arranged in a center region of the substrate.

Abstract: A device for measuring a penetration rate of outdoor air including humidity or oxygen of a material, and a reaction material cartridge for measuring an outdoor air penetration rate. The device includes a reacting part including a reaction material which reacts upon contact with outdoor air passing through a substrate; a cartridge body which accommodates the reaction part, and which is detachable from a measuring unit for measuring a change corresponding to the contact of the reaction material with the outdoor air; and a shielding means which shields the cartridge body, and which is separated from the cartridge body for contact between the reaction material and the outdoor air.

Abstract: Provided are a novel polyamide polymer obtained by polymerizing monomers including aromatic diamine substituted with a nitrile group and an amide group and an aromatic dibasic acid compound, a spinning dope comprising the same, and a polyamide molded article. A fiber obtained using the novel polyamide polymer according to the present invention, particularly, a fiber obtained by spinning the polymer according to the present invention may have high strength and high elasticity, such that the fiber may be applied to various industrial fields.

Abstract: A method for adjusting a beam pattern in a beam pattern adjusting apparatus in a communication system supporting a Beam Division Multiple Access (BDMA) scheme is provided. The method includes determining whether a Voltage Standing Wave Ratio (VSWR) value for each antenna included in an antenna array included in the beam pattern adjusting apparatus is greater than or equal to a threshold VSWR value, if it is determined that an antenna of the antenna array has a VSWR value that is greater than or equal to the threshold VSWR, detecting whether each of the antenna elements is operable, and if it is determined that at least one of the antennas is inoperable, adjusting a beam pattern of at least one of the antennas that is operable.

Abstract: A semiconductor device is disclosed including a through electrode. The semiconductor device may include a first semiconductor chip including a transceiver circuit formed on a first surface, a first coupling conductive pattern which is formed on a second surface opposite the first surface, and a through electrode which connects the transceiver circuit and the first coupling conductive pattern. There may be a transceiver located on a second semiconductor chip and including a second coupling conductive pattern facing the first coupling conductive pattern which communicates wirelessly with the first coupling conductive pattern.

Abstract: A beamforming method is provided. The beamforming method includes determining different beams for pieces of user equipment based on channel information fed back from the pieces of user equipment, predicting beam qualities of the pieces of user equipment for the beams, determining whether the beam qualities satisfy Quality of Service (QoS) for the pieces of user equipment, generating a wide nulling beam by applying wide nulling to a second beam having a side lobe acting as interference against one first beam, when the beam quality of the first beam does not satisfy the QoS; predicting beam qualities for the beams including the wide nulling beam instead of the second beam, and simultaneously communicating with the user equipment through the beams including the wide nulling beam instead of the second beam, when the beam qualities for the beams including the wide nulling beam instead of the second beam satisfy the QoS.

Abstract: A semiconductor package stack may include a lower semiconductor package and an upper semiconductor package stacked on a lower package board. The upper semiconductor package may include an upper semiconductor chip mounted on an upper package board with an opening configured to expose a lower surface of the upper semiconductor chip and a first heat slug disposed within the opening, contacting the lower surface of the upper semiconductor chip, and contacting an upper surface of a lower semiconductor chip.

Abstract: A semiconductor package having a structure in which a decoupling capacitor is disposed to be adjacent with a semiconductor chip using a vertical chip interconnection (VCI) to improve power integrity. The semiconductor package includes a semiconductor substrate including a first finger pad and a second finger pad, a semiconductor chip mounted on the semiconductor substrate and including a first chip pad and a second chip pad, a bonding tape electrically connecting the first finger pad and the first chip pad, and a bonding wire electrically connecting the second finger pad and the second chip pad. Here, the bonding tape is formed to make contact with a sidewall of the semiconductor chip in a vertical direction of the semiconductor chip.

Abstract: A semiconductor device including a common delay circuit configured to delay an input signal in response to a delay control code to output a first delayed input signal and a second delayed input signal; a first delay circuit configured to delay the first delayed input signal in response to the delay control code and to output a first output signal; and a second delay circuit configured to delay the second delayed input signal in response to the delay control code and to output a second output signal.

Abstract: Provided is a method in which a Digital Pre-Distorter (DPD) performs digital pre-distortion on a received In-phase (I) signal, a received Quadrature-phase (Q) signal, a feedback I signal, and a feedback Q signal; a mixer mixes a signal output from the DPD with a frequency signal output from an oscillator; each of n phase shifters phase-shifts a signal output from the mixer according to a preset beamforming pattern; each of n Power Amplifiers (PAs) amplifies a signal output from an associated phase shifter according to a gain, the PAs connected to the associated phase shifter on a one-to-one basis; each of n envelope detectors detects an envelope signal from a signal output from an associated PA, the envelope detector connected to the associated PA on a one-to-one basis; and a control unit determines whether the n PAs operate normally, using the envelope signals output from the n envelope detectors.

Abstract: An apparatus circulates a coolant in a turbocharger, which includes a first coolant line for supplying the coolant to the turbocharger from a water pump and configured to form a first flow resistance member to increase flow resistance to the coolant flowing through the first coolant line.

Abstract: Disclosed are a method for producing an oxide film using a low temperature process, an oxide film and an electronic device. The method for producing an oxide film according to an embodiment of the present invention includes the steps of coating a substrate with an oxide solution, and irradiating the oxide solution coat with ultraviolet rays under an inert gas atmosphere.

Abstract: A semiconductor device including a common delay circuit configured to delay an input signal in response to a delay control code to output a first delayed input signal and a second delayed input signal; a first delay circuit configured to delay the first delayed input signal in response to the delay control code and to output a first output signal; and a second delay circuit configured to delay the second delayed input signal in response to the delay control code and to output a second output signal.

Abstract: A package stack structure may an upper package include an upper package substrate having a first edge and a second edge opposite to the first edge. The upper package substrate has a first region arranged near the first edge and a second region arranged near the second edge. A first upper semiconductor device is mounted on the upper package substrate. The package stack structure may also include a lower package having a lower package substrate and a lower semiconductor device. The lower package is connected to the upper package through a plurality of inter-package connectors. The plurality of the inter-package connectors may include first inter-package connectors configured to transmit data signals; second inter-package connectors configured to transmit address/control signals; third inter-package connectors configured to provide a supply voltage for an address/control circuit; and fourth inter-package connectors configured to provide a supply voltage for a data circuit.

Abstract: A circuit board is provided including a core insulation film having a thickness and including a first surface and an opposite second surface, an upper stack structure and a lower stack structure. The upper stack structure has a thickness and has an upper conductive pattern having a thickness and an overlying upper insulation film stacked on the first surface of the core insulation film. The lower stack structure has a thickness and has a lower conductive pattern having a thickness and an overlying lower insulation film stacked on the second surface of the core insulation film. A ratio P of a sum of the thicknesses of the upper conductive pattern and the lower conductive pattern to a sum of the thicknesses of the core insulation film, the upper stack structure and the lower stack structure is in a range from about 0.05 to about 0.2.