Abstract: The present invention relates to an airbag sensor module which detects the amount of deformation of a car body so as to detect a collision during a car collision and which is attached to the car body in an adhesive manner, and the car body which is integrated with the airbag sensor module. One embodiment of the present application discloses the airbag sensor module mounted in an adhesive manner, comprising: a main substrate which is attached to the car body in an adhesive manner; and a collision detection sensor section which is formed on the main substrate, and which detects whether the car body collides by including a strain sensor for measuring the amount of deformation by being deformed along with the deformation of the car body caused by a collision thereof.

Abstract: A sealing member includes a body having a ring shape, a lower contacting portion protruding from a lower end of the body and having at least one recess, the recess provided in a lower surface of the lower contacting portion and extending in a radial direction of the body, and an outer contacting portion protruding outwards from the body along an outer side portion of the body.

Abstract: Provided are a lead-free solder, a solder paste, and a semiconductor device, and more particularly, a lead-free solder that includes Cu in a range from about 0.1 wt % to about 0.8 wt %, Pd in a range from about 0.001 wt % to about 0.1 wt %, Al in a range from about 0.001 wt % to about 0.1 wt %, Si in a range from about 0.001 wt % to about 0.1 wt %, and Sn and inevitable impurities as remainder, a solder paste and a semiconductor device including the lead-free solder. The lead-free solder and the solder paste are environment-friendly and have a high high-temperature stability and high reliability.

Abstract: A nozzle may include a nozzle body, a conductive line and a resistance-measuring member. The nozzle body may include a plurality of injecting holes. The conductive line may be disposed along the injecting holes. The resistance-measuring member may be configured to measure a resistance of the conductive line to detect a deformation of the injecting holes.

Abstract: The present invention relates to a polymer memory device and to a production method for the same, and relates to a novel photocrosslinkable polymer compound able to be used in a polymer memory device, to a novel non-volatile memory device in which an active layer between an upper electrode and a lower electrode comprises a photocrosslinkable polyimide polymer, and to a production method for the same. In the polymer memory device, the photocrosslinkable polyimide polymer is used as an active layer.

Abstract: To form a semiconductor device, a through electrode is formed in a semiconductor die, and a dielectric layer is then formed to cover the through electrode. The dielectric layer has an opening by being partially etched to allow the through electrode to protrude to the outside, or has a thickness thinner overall so as to allow the through electrode to protrude to the outside. Subsequently, a conductive pad is formed on the through electrode protruding to the outside through the dielectric layer by using an electroless plating method.

Abstract: Disclosed are a capacitor and a method of fabricating the same. The capacitor includes a first electrode; a second electrode spaced apart from the first electrode while facing the first electrode; a driving member connected to the second electrode to move the second electrode relative to the first electrode; and an insulating connection member between the driving member and the second electrode.

Abstract: A semiconductor device and a manufacturing method thereof are provided. In one embodiment of the manufacturing method of the semiconductor device, a through electrode is formed on a semiconductor die, and a dielectric layer such as a photopolymer is coated on the through electrode to cover the through electrode. Under exposure is performed on the dielectric layer, thereby partially removing the dielectric layer by development. As a result, a top end of the through electrode is exposed to the outside or protrudes through the dielectric layer. The dielectric layer remaining on the top end of the through electrode may be removed by performing a plasma descum process, if needed.

Abstract: A method and apparatus for selecting a Modulation and Coding Selection (MCS) level by a base station in a wireless mobile communication system is provided. The method includes receiving channel condition information from a terminal; estimating a channel condition of the terminal based on the channel condition information; determining a location of the terminal based on the estimated channel condition of the terminal; measuring intensities of signals that are periodically received from the terminal; determining a moving direction and a moving velocity of the terminal based on the measured intensities; and selecting an MCS level that is to be allocated to the terminal based on the location, the moving direction, and the moving velocity of the terminal.

Abstract: Disclosed herein are a printed circuit board and a method for manufacturing the same, the printed circuit board including an adhesion promoter (AP) film for enhancing adhesive strength, interposed between a circuit pattern and an insulating layer above a substrate, the AP film containing any one of a first polymer, a second polymer, and an organic compound. According to the method for manufacturing the printed circuit board, there can be provided a printed circuit board having a fine circuit pattern by using the AP film having a low roughness value and having improved adhesive strength with respect to the circuit pattern.

Abstract: In an embodiment, a chemical mechanical polishing method for a substrate having a first layer and a stepped portion. A surface of the first layer is positioned above an upper face of the stepped portion. A polishing process for selectively removing the stepped portion is performed on the first layer by using a first slurry composition that has a self-stopping characteristic so that the first layer is changed into a second layer having a substantially flat surface. A second polishing process is performed using a second slurry composition that does not have the self-stopping characteristic, until the upper face of the stepped portion is exposed.

Abstract: To form a semiconductor device, a through electrode is formed in a semiconductor die, and a dielectric layer is then formed to cover the through electrode. The dielectric layer has an opening by being partially etched to allow the through electrode to protrude to the outside, or has a thickness thinner overall so as to allow the through electrode to protrude to the outside. Subsequently, a conductive pad is formed on the through electrode protruding to the outside through the dielectric layer by using an electroless plating method.

Abstract: There are provided a multilayer ceramic electronic component and a fabrication method thereof. The multilayer ceramic component includes a ceramic main body in which internal electrodes and dielectric layers are alternately laminated; external electrodes formed on outer surfaces of the ceramic main body; intermediate layers formed on the external electrodes and including one or more selected from the group consisting of nickel, copper, and a nickel-copper alloy; and plating layers formed on the intermediate layers, whereby infiltration of a plating solution can be prevented.

Abstract: A semiconductor device and a manufacturing method thereof are provided. In one embodiment of the manufacturing method of the semiconductor device, a through electrode is formed on a semiconductor die, and a dielectric layer such as a photopolymer is coated on the through electrode to cover the through electrode. Under exposure is performed on the dielectric layer, thereby partially removing the dielectric layer by development. As a result, a top end of the through electrode is exposed to the outside or protrudes through the dielectric layer. The dielectric layer remaining on the top end of the through electrode may be removed by performing a plasma descum process, if needed.

Abstract: The present invention relates to a polymer memory device and to a production method for the same, and relates to a novel photocrosslinkable polymer compound able to be used in a polymer memory device, to a novel non-volatile memory device in which an active layer between an upper electrode and a lower electrode comprises a photocrosslinkable polyimide polymer, and to a production method for the same. In the polymer memory device, the photocrosslinkable polyimide polymer is used as an active layer.

Abstract: The present invention provides a method for quantifying a peptide compound having a phenylalanine residue at the N-terminal, comprising measuring the content of heat generated by mixing 1) a peptide compound having a phenylalanine residue at the N-terminal, 2) cucurbit[7]uril, and 3) a metal ion in a solution.

Abstract: In a 6F2 cell structure of a memory device and a method of fabricating the same, the plurality of active regions may have a first area at both end portions and a second area at a central portion. A portion of a bit-line contact pad may be positioned on the second area and the other portion may be positioned on a third area of the substrate that may not overlap with the plurality of active regions. The bit line may be connected with the bit-line contact pad at the third area. The cell structure may be more easily formed despite a 6F2-structured unit cell. The plurality of active regions may have an elliptical shape including major and minor axes. The plurality of active regions may be positioned in a major axis direction to thereby form an active row, and may be positioned in a minor axis direction in such a structure that a center of the plurality of active regions is shifted from that of an adjacent active region in a neighboring active row.

Abstract: There is provided a method for producing an aged black garlic concentrate comprising; classifying the garlic by condition and pretreating for cleaning an appearance; sealing the garlic in a polyethylene bag by 8˜10 Kg and storing in a tray; putting said tray into an aging device for a black garlic, and steam-treating by applying steam and heat for 30˜60 min while maintaining inside the aging device at a temperature of 80˜90° C.; main aging by aging the tray with said steam-treated garlic for 12˜15 days while maintaining inside the aging device at a temperature of 70˜80° C.; after-aging by gradually removing the water from the tray with said main-aged garlic at a low temperature condition for 7˜14 days, while maintaining inside the aging device at a temperature of 0˜5° C.

Abstract: In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall of the opening and the exposed portion of the substrate, the etch stop layer formed with a thickness less than an upper thickness threshold, and reducing at least a portion of the etch stop layer, the reduced portion of the etch stop layer forming an electrical connection with the substrate.

Abstract: A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an additive. The slurry composition may further include a surfactant. In a polishing method using the slurry composition, a polysilicon layer may be rapidly polished, and also dishing and erosion of the polysilicon layer may be suppressed.