Patents by Inventor Yong Liang

Yong Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for determining an association of biological features with a medical condition
    Patent number: 10438699
    Abstract: A system and a method for determining an association of one or more biological features with a medical condition provides empirical results and simulations confirming that the involvement of both L1/2-regularized logistic regression and L2-regularized logistic regression in the regression model is highly competitive against usual approaches like Lasso, L1/2, SCAD-L2, and Elastic net in analyzing high dimensional and low sample sizes data.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: October 8, 2019
    Assignee: MACAU UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Yong Liang, Hai-Hui Huang, Xiao-Ying Liu
  • Compounds and methods for kinase modulation, and indications therefor
    Patent number: 10426760
    Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: October 1, 2019
    Assignee: Plexxikon Inc.
    Inventors: Guoxian Wu, Jiazhong Zhang, Yong-Liang Zhu, Chao Zhang, Prabha N. Ibrahim, Songyuan Shi, Wayne Spevak, Dean R. Artis, James Tsai
  • COMPOUNDS AND METHODS FOR KINASE MODULATION, AND INDICATIONS THEREFOR
    Publication number: 20190209536
    Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.
    Type: Application
    Filed: August 8, 2018
    Publication date: July 11, 2019
    Inventors: Guoxian Wu, Jiazhon Zhang, Yong-Liang Zhu, Chao Zhang, Prabha N. Ibrahim, Songyuan Shi, Wayne Spevak, Dean R. Artis, James Tsai
  • SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
    Publication number: 20190214312
    Abstract: A semiconductor structure includes a substrate and a CMOS structure. The CMOS structure includes a PMOS structure and a NMOS structure. The PMOS structure includes two first source/drain regions disposed in the substrate, a first gate dielectric disposed partially in the substrate between the first source/drain regions, and a fully silicided gate electrode disposed on the first gate dielectric. The NMOS structure includes two second source/drain regions disposed in the substrate, a second gate dielectric disposed partially in the substrate between the second source/drain regions, and a non-silicided conductive gate electrode disposed on the second gate dielectric.
    Type: Application
    Filed: March 12, 2019
    Publication date: July 11, 2019
    Inventors: Yong-Liang LI, Hao SU
  • HIGH TEMPERATURE ANNEALING IN X-RAY SOURCE FABRICATION
    Publication number: 20190189385
    Abstract: The present disclosure relates to multi-layer X-ray sources having decreased hydrogen within the layer stack and/or tungsten carbide inter-layers between the primary layers of X-ray generating and thermally-conductive materials. The resulting multi-layer target structures allow increased X-ray production, which may facilitate faster scan times for inspection or examination procedures.
    Type: Application
    Filed: February 21, 2019
    Publication date: June 20, 2019
    Applicant: General Electric Company
    Inventors: Yong Liang, Vance Scott Robinson
  • COMPOUNDS AND METHODS FOR KINASE MODULATION, AND INDICATIONS THEREFOR
    Publication number: 20190175567
    Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.
    Type: Application
    Filed: August 22, 2018
    Publication date: June 13, 2019
    Inventors: Guoxian Wu, Jiazhong Zhang, Yong-Liang Zhu, Chao Zhang, Prabha N. Ibrahim, Songyuan Shi, Wayne Spevak, Dean R. Artis, James Tsai
  • Insulation film and method for making insulation film
    Patent number: 10300684
    Abstract: The present invention provides an insulation film, comprising a film upper layer (101) and a film lower layer (103), wherein both of the film upper layer (101) and film lower layer (103) are made of a PP material, the PP material contains a flame retardant to meet the flame retardance thereof; a film intermediate layer (102) located between the film upper layer (101) and the film lower layer (103), the film intermediate layer (102) is made of a PP or PE material does not contain a flame retardant or contains a small amount of flame retardant; an upper surface of the film intermediate layer (102) is bound together with a lower surface of the film upper layer (101), a lower surface of the film intermediate layer (102) is bound together with an upper surface of the film lower layer (103).
    Type: Grant
    Filed: November 21, 2013
    Date of Patent: May 28, 2019
    Assignee: ILLINOIS TOOL WORKS INC.
    Inventors: Hong Chuan Liao, Chris Benson, Yong Liang, Tom Carlson
  • Unmanned aerial vehicle deployment system
    Patent number: 10283000
    Abstract: A system for enabling an unmanned aerial vehicle (UAV) to respond to an alert on a premises, where the UAV may either confront the alert situation or monitor the alert situation from a distance. The UAV may respond to the alert situation after a controller receives alert event data from an alert generator. The controller may further match the data received to a number of event types stored in a database. This information allows a flight plan to be determined which will allow the UAV to navigate to a location associated with the alert situation.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: May 7, 2019
    Inventors: Michael John Marr, Andrew Stanley Grant, Benjamin Yong Liang Kuek, Yexi Zhu
  • Semiconductor structure and method for forming the same
    Patent number: 10276451
    Abstract: A semiconductor structure includes a substrate and a CMOS structure. The CMOS structure includes a PMOS structure and a NMOS structure. The PMOS structure includes two first source/drain regions disposed in the substrate, a first gate dielectric disposed partially in the substrate between the first source/drain regions, and a fully silicided gate electrode disposed on the first gate dielectric. The NMOS structure includes two second source/drain regions disposed in the substrate, a second gate dielectric disposed partially in the substrate between the second source/drain regions, and a non-silicided conductive gate electrode disposed on the second gate dielectric.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: April 30, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yong-Liang Li, Hao Su
  • ELECTRON STRIPPER FOILS AND PARTICLE ACCELERATORS HAVING THE SAME
    Publication number: 20190110354
    Abstract: System includes a particle accelerator configured to direct a particle beam of charged particles along a designated path. The system also includes an extraction device positioned downstream from the particle accelerator. The extraction device includes a stripper foil and a foil holder that holds the stripper foil. The foil holder is configured to position the stripper foil across the designated path of the particle beam such that the particle beam is incident thereon. The stripper foil is configured to remove electrons from the charged particles, wherein the stripper foil includes a backing layer and a conductive layer stacked with respect to one another. The backing layer includes synthetic diamond.
    Type: Application
    Filed: October 6, 2017
    Publication date: April 11, 2019
    Inventors: Yong Liang, Tomas Eriksson, Vasile Neculaes, George Theodore Dalakos
  • Photovoltaic Devices and Method of Making
    Publication number: 20190097079
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Application
    Filed: November 26, 2018
    Publication date: March 28, 2019
    Applicant: First Solar Inc.
    Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
  • High temperature annealing in X-ray source fabrication
    Patent number: 10217596
    Abstract: The present disclosure relates to multi-layer X-ray sources having decreased hydrogen within the layer stack and/or tungsten carbide inter-layers between the primary layers of X-ray generating and thermally-conductive materials. The resulting multi-layer target structures allow increased X-ray production, which may facilitate faster scan times for inspection or examination procedures.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: February 26, 2019
    Assignee: General Electric Company
    Inventors: Yong Liang, Vance Scott Robinson
  • SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
    Publication number: 20190057909
    Abstract: A semiconductor structure includes a substrate and a CMOS structure. The CMOS structure includes a PMOS structure and a NMOS structure. The PMOS structure includes two first source/drain regions disposed in the substrate, a first gate dielectric disposed partially in the substrate between the first source/drain regions, and a fully silicided gate electrode disposed on the first gate dielectric. The NMOS structure includes two second source/drain regions disposed in the substrate, a second gate dielectric disposed partially in the substrate between the second source/drain regions, and a non-silicided conductive gate electrode disposed on the second gate dielectric.
    Type: Application
    Filed: August 17, 2017
    Publication date: February 21, 2019
    Inventors: Yong-Liang LI, Hao SU
  • System and method for determining an association of at least one biological feature with a medical condition
    Patent number: 10192642
    Abstract: A system and a method for determining an association of at least one biological feature with a medical condition, in particularly, but not exclusively, a system and a method of determining an association of at least one biological feature in form of a gene expression with cancer or a subtype of cancer that can include the generation of a simplified protein-protein interaction network based on processed biological data. The system and respective method is especially suitable for analysis of high dimensional and low sample size biological datasets such as in cancer research.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: January 29, 2019
    Assignee: MACAU UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Yong Liang, Hua Chai, Xiao-Ying Liu
  • Substituted quinazolines for inhibiting kinase activity
    Patent number: 10172868
    Abstract: Chemical entities that are kinase inhibitors, pharmaceutical compositions and methods of treatment of cancer are described.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: January 8, 2019
    Assignee: NEUPHARMA, INC.
    Inventors: Xiangping Qian, Yong-Liang Zhu
  • Photovoltaic devices and method of making
    Patent number: 10141473
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: November 27, 2018
    Assignee: First Solar, Inc.
    Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
  • Benzenesulfonamide derivatives of quinoxaline, pharmaceutical compositions thereof, and their use in methods for treating cancer
    Patent number: 10137125
    Abstract: Benzenesulfonamide derivatives of quinoxaline that are kinase inhibitors, pharmaceutical compositions and methods of using these derivatives, e.g., for treatment of cancer are described.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: November 27, 2018
    Assignee: NEUPHARMA, INC.
    Inventors: Yong-Liang Zhu, Xiangping Qian
  • Photovoltaic Devices and Method of Making
    Publication number: 20180323334
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Application
    Filed: July 11, 2018
    Publication date: November 8, 2018
    Applicant: First Solar, Inc.
    Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
  • Certain chemical entities, compositions, and methods
    Patent number: 10065932
    Abstract: Chemical entities based on quinoxaline that are kinase inhibitors are described. Specifically quinoxaline derivatives of Formula I, containing a diarylamide or diarylurea substructure that inhibit Braf mutant kinase activity, pharmaceutical compositions containing the inhibitor compounds and methods of treatment of cancer comprising administering an effective amount of the Braf inhibitor compound are described.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: September 4, 2018
    Assignee: NeuPharma, Inc.
    Inventors: Xiangping Qian, Yong-Liang Zhu
  • X-RAY SOURCE TARGET
    Publication number: 20180247786
    Abstract: In one embodiment, an X-ray source includes a source target configured to generate X-rays when impacted by an electron beam. The source target includes one or more thermally conductive layers; and one or more X-ray generating layers interleaved with the thermally conductive layers, wherein at least one X-ray generating layer comprises regions of X-ray generating material separated by thermally conductive material within the respective X-ray generating layer.
    Type: Application
    Filed: February 24, 2017
    Publication date: August 30, 2018
    Inventors: Yong Liang, Vance Scott Robinson, Uwe Wiedmann