Abstract: A magneto-resistive memory is disclosed that includes a high-speed sense amplifier that can reliably operate at low signal levels. The sense amplifier includes offset cancellation to reduce or eliminate the internal offsets of the amplifier. The offset cancellation is controlled by one or more switches, which during operation, selectively enable the offset cancellation of the amplifier and store the offsets in one or more coupling capacitors.

Abstract: The nucleotide sequence and deduced amino acid sequences of the complete genome of a simian immunodeficiency virus isolate from a red-capped mangabey are disclosed. The invention relates to the nucleic acids and peptides encoded by and/or derived from these sequences and their use in diagnostic methods and as immunogens.

Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Abstract: A low power, high speed magneto-resistive memory is disclosed. The disclosed memory directly senses the resistive state of one or more magneto-resistive memory elements. This allows the memory to be read during a single read cycle, without the need for a word line current. This may substantially increase the speed and reduce the power of the memory.

Abstract: A low power, high speed magneto-resistive memory is disclosed. The disclosed memory directly senses the resistive state of one or more magneto-resistive memory elements. This allows the memory to be read during a single read cycle, without the need for a word line current. This may substantially increase the speed and reduce the power of the memory.

Abstract: A magneto-resistive memory is disclosed that includes a high-speed sense amplifier that can reliably operate at low signal levels. The sense amplifier includes offset cancellation to reduce or eliminate the internal offsets of the amplifier. The offset cancellation is controlled by one or more switches, which during operation, selectively enable the offset cancellation of the amplifier and store the offsets in one or more coupling capacitors.

Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Abstract: A magneto-resistive memory is disclosed that includes a high-speed sense amplifier that can reliably operate at low signal levels. The sense amplifier includes offset cancellation to reduce or eliminate the internal offsets of the amplifier. The offset cancellation is controlled by one or more switches, which during operation, selectively enable the offset cancellation of the amplifier and store the offsets in one or more coupling capacitors.

Abstract: A magneto-resistive memory is disclosed that includes a high-speed sense amplifier that can reliably operate at low signal levels. The sense amplifier includes offset cancellation to reduce or eliminate the internal offsets of the amplifier. The offset cancellation is controlled by one or more switches, which during operation, selectively enable the offset cancellation of the amplifier and store the offsets in one or more coupling capacitors.

Abstract: Methods are disclosed for writing magneto-resistive memory devices. Some of the methods help reduce peak currents during a write, while others increase the speed of the write. To reduce the peak currents, selected control signals such as selected word lines, digital lines and/or sense lines are sequentially activated, rather than activated in parallel. Because the word lines, digital lines and/or sense lines are sequentially activated, the peak currents experienced during a corresponding write may be reduced. To increase the speed of a write, the magnetization vector of the magneto-resistive bits are actively forced to be substantially parallel with the major axis of the magneto-resistive bits, rather than merely drift to that position under the forces inherent in the magneto-resistive bit.

Abstract: A low power, high speed magneto-resistive memory is disclosed. The disclosed memory directly senses the resistive state of one or more magneto-resistive memory elements. This allows the memory to be read during a single read cycle, without the need for a word line current. This may substantially increase the speed and reduce the power of the memory.

Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Abstract: Disclosed are apparatus and methods for efficiently writing states to one or more magneto-resistive elements. In one embodiment, current switches are provided for directing a write current through a number of write lines to control the write state of the magneto-resistive elements. In another embodiment, a sense current is selectively controlled to control which magneto-resistive elements are written to a particular state. In both embodiments, a latching element may be used to sense the state of the magneto-resistive elements, and may assume a corresponding logic state.

Abstract: A non-volatile latch having a power supply terminal and a ground terminal is disclosed. The non-volatile latch includes a pair of cross-coupled inverter elements each having a power supply terminal and a ground terminal. Magneto-resistive elements are interposed between the power supply terminals of both cross-coupled inverter elements and the power supply terminal of the non-volatile latch. In addition, magneto-resistive elements are interposed between the ground terminals of both cross-coupled inverter elements and the ground terminal of the non-volatile latch. By including magneto-resistive elements in each supply line, the effects of transistor parameter variation can be minimized.

Abstract: A method and apparatus for reading a magnetoresistive memory is disclosed wherein the wordline current is turned off during selected sensing operations. This substantially eliminates the noise that is typically injected by the wordline current into the bit structures during the sensing operations, which increases the signal-to-noise ratio on the sense lines. This, in turn, significantly increases the speed of the sensing operations and thus the read access time of the memory. Substantial power savings are also realized.