Abstract: Provided is directed to a negative word line driver, including: a block select address generation unit for generating first and second block select addresses having a block information according to an active signal; a row decoder controller for generating a control signal to disable a word line; a main word line driver for accessing a main word line by being driven in response to a signal coding the first block select address and the control signal; and a phi X driver for accessing a sub word line by being driven in response to a signal coding the second block select address and the control signal wloff.

Abstract: There is provided a semiconductor memory device which is capable of reducing a current consumption in an active mode. The semiconductor memory device includes an internal voltage supply block and an internal voltage control block. The internal voltage supplying block is enabled in response to an internal voltage driving enable signal and generates an internal voltage used in an internal operation of the semiconductor memory device. The internal voltage control block activates the internal voltage driving enable signal during a predetermined period after the semiconductor memory device enters an active operation period and during a period corresponding to read/write operations.

Abstract: There is provided a semiconductor memory device which is capable of reducing a current consumption in an active mode. The semiconductor memory device includes an internal voltage supply block and an internal voltage control block. The internal voltage supplying block is enabled in response to an internal voltage driving enable signal and generates an internal voltage used in an internal operation of the semiconductor memory device. The internal voltage control block activates the internal voltage driving enable signal during a predetermined period after the semiconductor memory device enters an active operation period and during a period corresponding to read/write operations.