Abstract: Provided is an automotive glass setting apparatus and a method for setting a vehicle glass. The method includes loading a glass having a plurality of edges onto a setting base, scanning, by a scanning unit, the plurality of edges of the loaded glass, and calculating a center of the glass based on data scanned by the scanning unit. The method further includes adjusting, by a plurality of alignment units and a plurality of moving mechanisms, a position of the glass to align the calculated center of the glass with a center of the setting base.

Abstract: Provided is an automotive glass setting apparatus. The apparatus includes a setting base supporting a glass having a plurality of edges, and a plurality of alignment units allowing the glass to be aligned with the setting base. The apparatus further includes a scanning unit scanning the edges of the glass, and a plurality of moving mechanisms moving the plurality of alignment units. Additionally, the apparatus includes a controller controlling the moving mechanisms based on data scanned by the scanning unit to align a center of the glass with a center of the setting base.

Abstract: Provided is an automotive glass setting apparatus, including a setting base supporting a glass having a plurality of edges, a plurality of alignment units allowing the glass to be aligned with the setting base; a scanning unit scanning the edges of the glass, a plurality of moving mechanisms moving the plurality of alignment units, and a controller controlling the moving mechanisms based on data scanned by the scanning unit to align a center of the glass with a center of the setting base.

Abstract: A power generation device manufacturing method and a power generation device are proposed. In one embodiment, the method includes (a) forming a halide perovskite active layer on a flexible substrate bent by a stress applied thereto and (b) releasing the stress applied to the substrate on which the halide perovskite active layer is formed, thereby unfolding the bent substrate. By applying a strain to the active layer of the power generation device and controlling the same, using the method described above, it is possible to improve the performance of the power generation device without changing the composition of the active layer or the configuration of the device.

Abstract: The disclosure defined by this invention provide a tidal current power generator capable of maximizing the force, which is generated by tidal current flows, through changing operating direction itself without any manual operation when water flow direction is changed. According to an exemplary embodiment, a tidal current power generator includes a main frame; a plurality of operating bodies; a plurality of power plates configured to forcibly move the plurality of operating bodies in the direction of the tidal current by the force of the tidal current; a pair of clutch jaws engaged with or spaced from each other by axial movement of an outer pipe; a locking part configured to move the outer pipe so that each of the clutch jaws is engaged with each other; and a release part configured to move the outer pipe so that each of the clutch jaws is spaced apart from each other.

Abstract: Provided are a piezoelectric device and a method of fabricating the same and the piezoelectric device may include a substrate including a 3-dimensional pattern surface layer; and a piezoelectric material layer, which is formed on the pattern surface layer and forms a 3-dimensional interface with the pattern surface layer.

Abstract: A semiconductor device formed on a SOI substrate is disclosed. The semiconductor device includes a first active region comprising a source region and a drain region spaced apart from the source region in a channel length direction, a third active region spaced apart from the first active region in a channel width direction, a second active region configured to connect the first active region and the third active region and having a width narrower than the first active region, a gate electrode disposed on the first active region, and an isolation region disposed between the first active region and the third active region.

Abstract: A system for beam training including a transmitter forming a transmission beam using a transmission array and a receiver forming a receiving beam using a receiving array is disclosed. The transmitter transmits an identifier of a transmission training beam selected from the transmission beams using a secondary synchronization signal or a common reference signal, etc. The identifier of the transmission training beam is used for the beam training.

Abstract: A semiconductor device includes a high resistivity substrate, a transistor formed on the high resistivity substrate, and a deep trench device isolation region formed in the high resistivity substrate to surround the transistor. Particularly, the high resistivity substrate has a first conductive type, and a deep well region having a second conductive type is formed in the high resistivity substrate. Further, a low concentration well region having the first conductive type is formed on the deep well region, and the transistor is formed on the low concentration well region.

Abstract: A semiconductor device includes a high resistivity substrate, a first deep well region having a first conductive type and formed in the high resistivity substrate, a second deep well region having a second conductive type and formed on the first deep well region, a first well region having the first conductive type and formed on the second deep well region, and a transistor formed on the first well region.

Abstract: According to an exemplary embodiment, a tidal current power generator includes a main frame including first and second sprockets rotated together with a chain and a guide rail for supporting the chain, the main frame being arranged in parallel with the direction of the tidal current of seawater; a plurality of operating bodies mounted on the chain and guided by the guide rails, the operating bodies including an inner shaft projecting to both sides of the outer surface and an outer pipe accommodating the inner shaft; a plurality of power plates combined with the outer pipe configured to forcibly move the plurality of operating bodies in the direction of the tidal current by the force of the tidal current; a pair of clutch jaws formed to face the inner circumferential surface of the outer pipe and the outer circumferential surface of the inner shaft and is engaged with or spaced from each other by axial movement of the outer pipe; a locking part configured to move the outer pipe so that each of the clutch jaws

Abstract: Provided are a piezoelectric device and a method of fabricating the same and the piezoelectric device may include a substrate including a 3-dimensional pattern surface layer; and a piezoelectric material layer, which is formed on the pattern surface layer and forms a 3-dimensional interface with the pattern surface layer.

Abstract: Provided is a method of forming a transition metal chalcogenide thin-film and the method includes preparing a first substrate having formed thereon a transition metal-containing precursor thin-film; displacing a second substrate separately with a constant distance from the first substrate by using a bridge unit while the second substrate is facing the first substrate, thereby securing a gas flowing path between the first substrate and the second substrate; heating the first and second substrates to a reaction temperature; and introducing a chalcogen-containing gas from an end of a reactor, such that the chalcogen-containing gas flows via the path.

Abstract: In embodiments, a semiconductor device includes a high resistivity substrate, a transistor disposed on the high resistivity substrate, and a deep trench device isolation region disposed in the high resistivity substrate to surround the transistor. Particularly, the high resistivity substrate has a first conductive type, and a deep well region having a second conductive type is disposed in the high resistivity substrate. Further, a first well region having the first conductive type is disposed on the deep well region, and the transistor is disposed on the first well region.

Abstract: In embodiments, a radio frequency (RF) module includes an RF switching device, an RF active device, a passive device and a control device formed on a high resistivity substrate. The passive device can include a shallow trench device isolation region having a plate shape and formed at a surface portion of the high resistivity substrate, deep trench device isolation regions extending downward from a lower surface of the shallow trench device isolation region so as to define at least one isolated region therebetween, at least one insulating layer formed on the high resistivity substrate, and at least one passive component formed on the insulating layer.

Abstract: A method and a system for synchronizing time information in an ad-hoc network are disclosed.

Abstract: Provided is a method of forming a transition metal chalcogenide thin-film and the method includes preparing a first substrate having formed thereon a transition metal-containing precursor thin-film; displacing a second substrate separately with a constant distance from the first substrate by using a bridge unit while the second substrate is facing the first substrate, thereby securing a gas flowing path between the first substrate and the second substrate; heating the first and second substrates to a reaction temperature; and introducing a chalcogen-containing gas from an end of a reactor, such that the chalcogen-containing gas flows via the path.

Abstract: A semiconductor device includes a high resistivity substrate, a first deep well region having a first conductive type and formed in the high resistivity substrate, a second deep well region having a second conductive type and formed on the first deep well region, a first well region having the first conductive type and formed on the second deep well region, and a transistor formed on the first well region.

Abstract: In embodiments, a radio frequency (RF) module includes an RF switching device, an RF active device, a passive device and a control device formed on a high resistivity substrate. The passive device can include a shallow trench device isolation region having a plate shape and formed at a surface portion of the high resistivity substrate, deep trench device isolation regions extending downward from a lower surface of the shallow trench device isolation region so as to define at least one isolated region therebetween, at least one insulating layer formed on the high resistivity substrate, and at least one passive component formed on the insulating layer.

Abstract: Disclosed is a downlink signal configuring method and device, and synchronization and cell search method and device using the same in a mobile communication system. A downlink frame has plural symbols into which pilot subcarriers are distributively arranged with respect to time and frequency axes. Initial symbol synchronization and initial frequency synchronization are estimated by using a position at which autocorrelation of a cyclic prefix of a downlink signal and a valid symbol of the downlink is maximized, and cell search and integer-times frequency synchronization are estimated by using pilot subcarriers included in the estimated symbol. Fine symbol synchronization, fine frequency synchronization, and downlink frame synchronization is estimated by using an estimated cell search result.