Abstract: A precision approach path indicator system (PAPI) including multiple LHA indicators and power sources. Each LHA indicator comprises several assembly modules, with each module made up of several red and white LEDs, several collimating lens, one optical combiner, and one projection lens set. From a side view of the module, the red LEDs are placed on top of white LEDs, with a collimating lens in front of each LED. The optical combiner is in front of both the red and white LEDs, slightly above the white LEDs in vertical placement. The optical combiner has a reflective coating on the bottom surface, and a red light filter coating on the projection surface. The combined beam of light is projected out through a projection lens at front of the assembly module.

Abstract: A semiconductor device is disclosed that includes: a substrate; a first dielectric layer formed over the substrate and formed of a first high-k material, the first high-k material selected from the group consisting of HfO2, HfSiO, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; a second dielectric layer formed over the first dielectric layer and formed of a second high-k material, the second high-k material being different than the first high-k material and selected from the group consisting of HfO2, HfSiO, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; and a metal gate formed over the second dielectric layer. The first dielectric layer includes ions selected from the group consisting of N, O, and Si.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first active region and a second active region, providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first capping layer and a second capping layer over the high-k dielectric layer, the first capping layer overlying the first region and the second capping layer overlying the second region, forming a layer containing silicon (Si) over the first and second capping layers, forming a metal layer over the layer containing Si, and forming a first gate stack over the first region and a second gate stack over the second active region.

Abstract: An LED based omni-directional light engine includes a toroidal lens coupled to a controller circuit board and two or more evenly spaced LEDs mounted to the controller circuit board. The toroidal lens includes an inner surface coated with a layer of reflection materials, an outer surface, and a flat base surface. The controller circuit board is electrically coupled to a power source. The LEDs are located immediately under the flat base surface. The inner surface substantially reflects light beams emitted from the LEDs to the outer surface which refracts the beams to the omni-directions.

Abstract: A browser-enabled device includes a browser-based user interface and control architecture, which has a browser core, a browser framework, and a user interface. The user interface is written using a markup language. In processing event registrations, the browser framework receives an event registration. The received event registration having a response unique resource identifier (URI) content and a priority field. The priority field of the received event registration is examined to determine priority of the received event registration. If the browser core is loading the response URI content of a prior event registration and if the priority of the received event registration is higher than the priority of the prior event registration, then the loading of the response URI content of the prior event registration is halted, and loading of the response URI content of the received event registration is begun.

Abstract: A semiconductor device includes a semiconductor substrate and a transistor formed in the substrate, the transistor having a gate stack that has an interfacial layer formed on the substrate, a high-k dielectric layer formed over the interfacial layer, a metal layer formed over the high-dielectric layer, a capping layer formed between the interfacial layer and high-k dielectric layer; and a doped layer formed on the metal layer, the doped layer including at least F.

Abstract: A sensor is disclosed for determining a sulfur concentration in a liquid, such as a liquid fuel. The sensor includes a substrate that is at least partially coated with zinc oxide and, more specifically, zinc oxide microstructures. The zinc oxide microstructures have a crystal lattice structure that is oriented in the (002) plane, are oxygen-deficient and have a rod-like microstructure. If the substrate is conductive, it may be connected directly to a working electrode which is connected to a potentiometer which, in turn, is connected to a reference electrode. If the substrate is non-conductive, the conductive layer can be deposited on the substrate prior to deposition of the zinc oxide to form a working electrode. An application of a constant current (or voltage) to either electrode will result in a voltage across (or current flow between) the working and reference electrodes.

Abstract: The Field Testing Instrument (FTI) is designed for use in the regular maintenance and installation of airport Precision Approach Path Indicator (PAPI). The FTI is a self-contained and portable instrument that accurately measures the most important PAPI parameters, such as vertical aiming angle, transition angle, and light intensity. In addition to working with the current incandescent PAPIs, the FTI also measures parameters specific to the next generation LED PAPI. The FTI uses modern, efficient technology to reduce the life-cycle cost of approach lighting systems. The FTI improves on traditional PAPI testing methods by directly measuring the PAPI light beam focused to a target plate, as if seen from the pilot perspective. Due to significantly improvements in measurement accuracy and reliability, the FTI may supplement and even replace costly flight checks for PAPI maintenance with ground based operation.

Abstract: A measurement system is disclosed for determining a sulfur concentration in a liquid, such as a liquid fuel. The measurement system includes a first electrode that is at least partially coated with zinc oxide and, more specifically, zinc oxide microstructures. The zinc oxide microstructures have a crystal lattice structure that is oriented in the (002) plane. The first electrode may be connected to an electrometer which, in turn, may be connected to a second electrode. The second electrode may be disposed on a common substrate with the first electrode or may be in the form of a plate disposed substantially parallel to the first electrode.

Abstract: Methods and systems for creating an orientation marker in a 3D ultrasound imaging system are disclosed.

Abstract: An ultrasound imaging system and method provides for extended imaging.

Abstract: The invention provides a method and apparatus for fast volume rendering of 3D ultrasound image, comprising a dividing step, a calculating step, a determining step, a morphological closing operation step and a filling step, wherein each flat grid can be entirely filled by obtaining gray-scale values for all pixels inside the grid through interpolating; for the non-flat grid, the steps of dividing, calculating, determining and filling are performed repeatedly until the non-flat grid is subdivided into atomic grids to calculate gray-scale values for remaining pixels by projection. As the method can be finished in the rear end, no difficulty occurs in the implementation, and no process for being adapted to previous frames is required. Therefore, the method can improve the rendering speed effectively without degrading the quality of image to put 3D ultrasound imaging to the best use.

Abstract: The present invention provides a method and module for preprocessing ultrasound imaging. The method comprises a calculation step for constructing a multivalue vector field and a smoothing step for smoothing the whole volume data. The method further comprises a judgement step and minification and magnification steps. The module includes a calculation unit, a smoothing unit, a judgement unit, a minification unit and a magnification unit. According to the method for preprocessing ultrasound imaging, speckle noise can be eliminated effectively by calculating a mean value of a plurality of nodes distributed over the surface, so as to implement the smoothing. Therefore, this method is capable of smoothing data without compromising details.

Abstract: A semiconductor device includes a semiconductor substrate and a transistor formed in the substrate, the transistor having a gate stack that has an interfacial layer formed on the substrate, a high-k dielectric layer formed over the interfacial layer, a metal layer formed over the high-dielectric layer, a capping layer formed between the interfacial layer and high-k dielectric layer; and a doped layer formed on the metal layer, the doped layer including at least F.

Abstract: This invention discloses a traffic monitoring system, which uses Doppler sonar to measure the direction and speed of people and object moving within a target area, such as a secure one way exit. The system is un-obtrusive, accurate, and easy to operate. In case of unauthorized movement direction, the system triggers build-in alarms, as well as signals the integrated security and surveillance systems. The system consists of Head Modules, which are responsible for sending and receiving continuous ultra-sound wave at a pre-set direction of traffic and digital processing of the data; and Management Module, which is responsible for controlling the system, as well as interfacing with other surveillance and security systems.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a high-k dielectric layer over a semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a metal layer over the capping layer, forming a semiconductor layer over the metal layer, performing an implantation process on the semiconductor layer, the implantation process using a species including F, and forming a gate structure from the plurality of layers including the high-k dielectric layer, capping layer, metal layer, and semiconductor layer.

Abstract: A method is provided that allows for maintaining a desired equivalent oxide thickness (EOT) by reducing the thickness of an interfacial layer in a gate structure. An interfacial layer is formed on a substrate, a gate dielectric layer such as, a high-k gate dielectric, is formed on the interfacial layer. A gettering layer is formed on the substrate overlying the interfacial layer. The gettering layer may function to getter oxygen from the interfacial layer such that the interfacial layer thickness is decreased and/or restricted from growth.

Abstract: The present invention provides a method and apparatus for fast 3D ultrasound imaging. The method comprises data acquisition, desired data selection, data smoothing, table construction, ray casting, table look-up, ray synthesis and final result output. The apparatus comprises an acquisition module, a table look-up module, a synthesis module and an output module. The present invention can avoid a huge amount of unnecessary reconstruction calculations by smoothing preprocessing and constructing the reconstruction table and the gradient table as well as transforming coordinates of the points where necessary. The present invention has greater practical applicability, because the existing imaging technology demands that the radius for rotating the probe be identical to the radius of the probe.

Abstract: An ultrasound imaging system provides for defining a VOI in an ultrasound imaging space. The system defines an initial frame of the VOI in the ultrasound imaging space, receives a selection of at least one reference point at an arbitrary location in the ultrasound imaging space, creates at least one curved surface using at least one element of the initial frame and the at least one reference point, and then creates VOI based on the curved surface in the ultrasound imaging space.

Abstract: A relational database is provided with a plurality of data entries stored in the database. The data entries have a hierarchical relationship. The data entries are assigned a real number, unique identifier, which can be calculated using a convergent series, capable of locating each data entry in the hierarchical structure. Each data entry is assigned a float type, level value, identifying the data entries hierarchical level in the structure. The data entries are also assigned an family value defining a hierarchical relationship with another data entry. The invented method allows for retrieving a sub-tree of any data entry by comparing two real numbers, and adding new data entries or a sub-tree without making changes to other data entries.