Abstract: A semiconductor device having metal gate includes a substrate, a metal gate positioned on the substrate, a high-k gate dielectric layer, and an epitaxial channel layer positioned in between the high-k gate dielectric layer and the substrate. A length of the epitaxial channel layer is larger than a length of the metal gate, and a bottom of the epitaxial channel layer and the substrate are coplanar.

Abstract: A GOA (Gate On Array) circuit applied to a liquid crystal display device is disclosed. The liquid crystal display device has a plurality of scan lines, The GOA circuit has a plurality of cascaded GOA units. An (N)th level GOA unit controls charge to an (N)th level scanning line. The (N)th level GOA unit includes a forward-reward scan circuit, a pull-up circuit, an bootstrap capacitor circuit, a pull-up control circuit, and a pull-down sustain circuit. The pull-up circuit, the bootstrap capacitor circuit, the pull-up control circuit, and the pull-down sustain circuit are connected with a gate signal point. The forward-reward scan circuit is connected with an (N?1)th level scanning line and an (N+1)th level scanning line, so as to raise the stability of the gate signal point and reduce the usages of thin film transistors.

Abstract: A method of configuring an eddy current detector to measure a thickness of a coating on a substrate includes measuring an impedance of the coated substrate, and establishing an impedance plane plot using a computer. The method may also include determining a rotation angle. The rotation angle may be an angle of rotation of the impedance plane plot that will make the inductive reactance component of the impedance substantially insensitive to substrate electrical conductivity within a coating thickness range. The method may further include establishing a calibration curve that is substantially insensitive to substrate electrical conductivity using the rotation angle. The calibration curve may be a curve that relates the inductive reactance component of the impedance to coating thickness.

Abstract: In general, techniques are described for performing decentralized packet dispatch. A network device comprising one or more service processing units (SPUs) and an interface may implement the techniques. The interface receives a packet associated with a session and selects a first one of SPUs to dispatch the packet based on first information extracted from the packet. The first one of the SPUs dispatches the packet to a second one of the SPUs based on second information extracted from the packet. The second one of the SPUs performs first pass processing to configure the network security device to perform fast path processing of the packet such that second one of the SPUs applies one or more services to the packet and subsequent packets associated with the same session without application of services to the packets by the first one of the service processing units.

Abstract: A manufacturing method of a semiconductor device having metal gate includes providing a substrate having a first semiconductor device formed thereon, and the first semiconductor device includes a first dummy gate. Next, the dummy gate is removed to form a first gate trench in the first semiconductor device, and the substrate is exposed in a bottom of the first gate trench. Subsequently, an epitaxial channel layer is formed in the first gate trench.

Abstract: A semiconductor device having metal gate includes a substrate, a metal gate positioned on the substrate, a high-k gate dielectric layer, and an epitaxial channel layer positioned in between the high-k gate dielectric layer and the substrate. A length of the epitaxial channel layer is larger than a length of the metal gate, and a bottom of the epitaxial channel layer and the substrate are coplanar.

Abstract: Methods and systems for creating an orientation marker in a 3D ultrasound imaging system are disclosed.

Abstract: A manufacturing method of a semiconductor device having metal gate includes providing a substrate having a first semiconductor device formed thereon, and the first semiconductor device includes a first dummy gate. Next, the dummy gate is removed to form a first gate trench in the first semiconductor device, and the substrate is exposed in a bottom of the first gate trench. Subsequently, an epitaxial channel layer is formed in the first gate trench.

Abstract: A fixture for a plurality of mold cores includes a platform, a side plate mounted to the platform, a plurality of positioning tabs, and a pushing member. The plurality of positioning tabs is located on the platform and abuts the side plate. The plurality of positioning tabs is spaced to each other. The pushing member is configured to retain the plurality of mold cores to the side plate.

Abstract: An ultrasound imaging system provides for defining a VOI in an ultrasound imaging space. The system defines an initial frame of the VOI in the ultrasound imaging space, receives a selection of at least one reference point at an arbitrary location in the ultrasound imaging space, creates at least one curved surface using at least one element of the initial frame and the at least one reference point, and then creates VOI based on the curved surface in the ultrasound imaging space.

Abstract: A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a first MOS device of a first conductivity type and a second MOS device of a second conductivity type opposite the first conductivity type. The first MOS device includes a first gate dielectric on a semiconductor substrate; a first metal-containing gate electrode layer over the first gate dielectric; and a silicide layer over the first metal-containing gate electrode layer. The second MOS device includes a second gate dielectric on the semiconductor substrate; a second metal-containing gate electrode layer over the second gate dielectric; and a contact etch stop layer having a portion over the second metal-containing gate electrode layer, wherein a region between the portion of the contact etch stop layer and the second metal-containing gate electrode layer is substantially free from silicon.

Abstract: Methods and systems for creating an orientation marker in a 3D ultrasound imaging system are disclosed.

Abstract: An ultrasound imaging system provides for defining a VOI in an ultrasound imaging space. The system defines an initial frame of the VOI in the ultrasound imaging space, receives a selection of at least one reference point at an arbitrary location in the ultrasound imaging space, creates at least one curved surface using at least one element of the initial frame and the at least one reference point, and then creates VOI based on the curved surface in the ultrasound imaging space.

Abstract: A sulfur concentration detection system for detecting a sulfur concentration in a liquid includes a sensor having a conductive metal substrate and zinc oxide microstructures deposited on and protruding from the conductive metal substrate, a current source, and a voltage detector. An electrical resistivity of the zinc oxide microstructures is configured to change as a function of an amount of sulfur in the liquid available to react with zinc in the zinc oxide microstructures. The current source and the voltage detector are connected to the conductive metal substrate and configured to detect a change in the electrical resistivity of the zinc oxide microstructures.

Abstract: A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering composition. The second metal layer includes oxygen. The third metal layer includes an interface with a polysilicon layer.

Abstract: A method of forming a gate structure is provided. The method includes providing a metal layer in the gate structure, the metal layer includes an oxygen-gettering composition. The metal layer getters oxygen from the interface layer, which may decrease the thickness of the interface layer. The gettered oxygen converts the metal layer to a metal oxide, which may act as a gate dielectric for the gate structure. A multi-layer metal gate structure is also provided including a oxygen-gettering metal layer, an oxygen-containing metal layer, and a polysilicon interface metal layer overlying a high-k gate dielectric.

Abstract: A sensor is disclosed for determining a sulfur concentration in a liquid, such as a liquid fuel. The sensor includes a substrate that is at least partially coated with zinc oxide and, more specifically, zinc oxide microstructures. The zinc oxide microstructures have a crystal lattice structure that is oriented in the (002) plane, are oxygen-deficient and have a rod-like microstructure. If the substrate is conductive, it may be connected directly to a working electrode which is connected to a potentiometer which, in turn, is connected to a reference electrode. If the substrate is non-conductive, the conductive layer can be deposited on the substrate prior to deposition of the zinc oxide to form a working electrode. An application of a constant current (or voltage) to either electrode will result in a voltage across (or current flow between) the working and reference electrodes.

Abstract: A measurement system is disclosed for determining a sulfur concentration in a liquid, such as a liquid fuel. The measurement system includes a first electrode that is at least partially coated with zinc oxide and, more specifically, zinc oxide microstructures. The zinc oxide microstructures have a crystal lattice structure that is oriented in the (002) plane. The first electrode may be connected to an electrometer which, in turn, may be connected to a second electrode. The second electrode may be disposed on a common substrate with the first electrode or may be in the form of a plate disposed substantially parallel to the first electrode.

Abstract: A method for three-dimensional ultrasonic imaging conducting a first group of line scans on a scanning object at a first group of scanning positions; receiving echo signals from the first group of line scans, and acquiring a first group of scanning line data; carrying out a second group of line scans on the scanning object at a second group of scanning positions; receiving echo signals from the second group of line scans and acquiring a second group of scanning line data; and acquiring a three-dimensional image of the scanning object according to scanning data comprising the first group of scanning line data and the second group of scanning line data; the scanning positions in the second group of scanning positions are shifted by a first distance along a direction parallel with a frame scanning direction relative to the scanning position in the first group of scanning positions corresponding to the scanning position, allowing an increase of joint line space without changing the independent line space, thus th

Abstract: A method is provided for extending the service life of a used metallic compressor wheel having a damaged surface. The method generally comprises the steps of inspecting the used compressor wheel for material discontinuities such as fatigue cracks and, if fatigue cracks exceeding a predetermined length are not present, renewing the used compressor wheel such as by peening. The inspection process comprises conducting a non-destructive examination of the used compressor wheel to detect cracks larger than those which would fall generally within the compressive stress zone that is generated by peening.