Abstract: An imaging device includes a semiconductor substrate and pixels. Each of the pixels includes a first capacitive element including a first electrode provided above the semiconductor substrate, a second electrode provided above the semiconductor substrate, and a dielectric layer located between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode has a first electrical contact point electrically connected to a first electrical element and a second electrical contact point electrically connected to a second electrical element different from the first electrical element. The first capacitive element includes at least one trench portion having a trench shape.

Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.

Abstract: A second cell is less sensitive than a first cell. The first cell includes a first charge accumulator and a first wire. The first charge accumulator accumulates first signal charge and is electrically connected to a first node. The first wire is located within an upper wiring layer and is electrically connected to the first node. The second cell includes a second charge accumulator and a second wire. The second charge accumulator accumulates second signal charge and is electrically connected to a second node. The second wire is located within the upper wiring layer and is electrically connected to the second node. In the upper wiring layer, a shortest distance between the first wire and wires is greater than a shortest distance between the second wire and the wires.

Abstract: A camera system including an optical system; and an imaging device that receives a light through the optical system. The imaging device includes a semiconductor substrate; pixels; and a signal line located along the pixels. Each pixel includes a photoelectric converter that generates signal charge by photoelectric conversion, a first transistor that outputs a signal to the signal line according to an amount of the signal charge, and a circuit that is coupled to a gate of the first transistor and that includes a capacitive element and a second transistor. The signal line is positioned in proximity to the semiconductor. The capacitive element is further away from the semiconductor substrate compared to the signal line. The gate of the first transistor is coupled to the capacitive element through the second transistor, and the gate of the first transistor is coupled to the photoelectric converter not through the second transistor.

Abstract: An observation device configured to observe a sample stored in a multistage container including a plurality of spaces divided by a plurality of partition walls which are parallel. The observation device includes: a light source configured to generate light; a phase contrast microscope configured to irradiate the sample with light from the light source and to make executable observing a phase difference due to interference of light returned from the sample; and a reflection mirror configured to reflect light passed through the sample again toward the sample. The reflection mirror is inclined with respect to the plurality of partition walls of the multistage container.

Abstract: A liquid ejection head includes a liquid chamber having an element that generates thermal energy, a discharge port for liquid, a nozzle that communicates between the discharge port and the liquid chamber, and a liquid supply path and a liquid collection path in communication with the liquid chamber on opposite sides. The thermal energy forms a bubble in the liquid chamber, and the formed bubble enters the nozzle to eject liquid under pressure of the bubble. In a state where at least a portion of the bubble in the nozzle has a velocity component toward a surface of the liquid chamber that has the element and before liquid to be ejected comes in contact with the surface of the liquid chamber by being drawn into the liquid chamber by contraction of the bubble, the bubble communicates with an atmosphere and the liquid is ejected through the discharge port.

Abstract: A treatment tool for an endoscope includes an operating part and a transmitting part that transmits an operation of the operating part to a grip part of a distal end part and a bendable part. The operating part has an operating member that is movable in a first direction and a second direction orthogonal to the first direction. The transmitting part has a first transmitting member that is moved to an operating part side based on an operation of the operating member in the first direction and closes the grip part and a second transmitting member that is moved to the operating part side based on an operation of the operating member in the second direction and bends the bendable part.

Abstract: An activity support apparatus supports an activity of a worker at a disaster site. The activity support apparatus comprises a position acquisition unit that acquires a position of the worker, a boundary data acquisition unit that acquires boundary data that indicates a boundary of a building at the disaster site, and an entry determination unit that determines whether the worker has entered the building based on the positions of the worker acquired at different timings and the boundary data.

Abstract: An activity support apparatus supports an activity of a worker at a disaster site. The activity support apparatus comprises a vibration data acquisition unit that acquires vibration data of vibrations generated by the worker, an activity level estimation unit that estimates an activity level of the worker based on the vibration data acquired by the vibration data acquisition unit, and a notification unit that notifies the activity level estimated by the activity level estimation unit.

Abstract: An imaging apparatus includes a semiconductor substrate; a wiring layer located on the semiconductor substrate and including wiring lines; pixel electrodes each located on the wiring layer and having one-to-one correspondence to each of the pixels; a shield electrode located on the wiring layer and disposed between the pixel electrodes; a counter electrode located above the pixel electrodes and the shield electrode; and a photoelectric conversion layer located between the pixel electrodes and the shield electrode and the counter electrode. The wiring layer includes a shield wiring line, and FD wiring lines connected respectively to the pixel electrodes. There is a one-to-one correspondence between each of the FD wiring lines and each of the pixel electrodes. The shield wiring line is connected to the shield electrode. The shield wiring line includes openings each overlapping with at least one of the FD wiring lines in a plan view.

Abstract: An imaging device includes a semiconductor substrate and pixels. Each of the pixels includes a first capacitive element including a first electrode provided above the semiconductor substrate, a second electrode provided above the semiconductor substrate, and a dielectric layer located between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode has a first electrical contact point electrically connected to a first electrical element and a second electrical contact point electrically connected to a second electrical element different from the first electrical element. The first capacitive element includes at least one trench portion having a trench shape.

Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.

Abstract: An imaging device includes a semiconductor substrate, a photoelectric converter that converts incident light into a charge, a first impurity region located in the semiconductor substrate, where the first impurity region accumulates the charge and contains impurities of a first conductivity type, a second impurity region located in the semiconductor substrate, where the second impurity region contains impurities of the first conductivity type and is different from the first impurity region, a third impurity region located in the semiconductor substrate, between the first impurity region and the second impurity region in plan view, where the third impurity region contains impurities of a second conductivity type that differs from the first conductivity type, and a first contact located on the semiconductor substrate and electrically connected to the third impurity region. The first contact includes a semiconductor containing impurities of the second conductivity type.

Abstract: An imaging device including a semiconductor substrate; pixels; and a signal line located along the pixels, where each of the pixels includes: a photoelectric converter that generates signal charge by photoelectric conversion, a first transistor that outputs a signal to the signal line according to an amount of the signal charge, and a circuit that is coupled to a gate of the first transistor and that includes a capacitive element, and the signal line is located closer to the semiconductor substrate than the capacitive element.

Abstract: A camera system including a lens; and an imaging device that receives a light through the lens. The imaging device includes: a semiconductor substrate; a photoelectric converter that is configured to convert the light into a signal charge and that is stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first state and a second state, a sensitivity in the first state being different from a sensitivity in the second state, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.

Abstract: An imaging device includes: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first contact that is directly connected to the first diffusion region; a second contact that is directly connected to the second diffusion region; a first transistor that includes the first diffusion region as one of a source and a drain and that includes a first gate; and a second transistor that includes the second diffusion region as one of a source and a drain and that includes a second gate. A dimension of the second contact in a direction parallel to a width direction of the second gate is greater than a dimension of the first contact in a direction parallel to a width direction of the first gate.

Abstract: An inspection device for a pillar shaped honeycomb filter includes: a housing portion that can house a pillar shaped honeycomb filter; an introduction pipe and a discharge pipe through which a gas can flow, each of the introduction pipe and the discharge pipe being connected to the housing portion; a particle generation portion for generating particles; a particle introduction portion for introducing the particles generated by the particle generation portion into the introduction pipe; a gas stirring portion arranged in the introduction pipe on an upstream side of the particle introduction portion in a gas flow direction; and particle counters for measuring the number of particles, the particle counters being arranged in the introduction pipe and the discharge pipe on a downstream side of the particle introduction portion in the gas flow direction.

Abstract: An imaging device having a semiconductor substrate including: a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type different from the first conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that directly accumulates at least a part of the charges generated in the first diffusion region. The imaging device further includes a contact plug in contact with the second diffusion region, and a capacitive element electrically connected to the second diffusion region through the contact plug.

Abstract: An imaging device includes pixels and pixel electrodes. Each of the pixels includes a semiconductor substrate, a photoelectric conversion layer, and a corresponding pixel electrode out of the pixel electrodes. The photoelectric conversion layer converts light into electric charges. The corresponding pixel electrode collects the electric charges. A pitch of the pixel electrodes is greater than a pitch of the pixels.

Abstract: An imaging device includes pixels. Each of the pixels includes a first photoelectric conversion layer, a first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, a third photoelectric conversion layer, a third pixel electrode, a first counter electrode, and a second counter electrode. The first pixel electrode, the first photoelectric conversion layer, the first counter electrode, the second photoelectric conversion layer, the second pixel electrode, the second counter electrode, the third photoelectric conversion layer, and the third pixel electrode are arranged in this order.