Patents by Inventor Yoshio Kawai

Yoshio Kawai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100248493
    Abstract: A photomask blank is provided comprising a transparent substrate, a single or multi-layer film including an outermost layer composed of chromium base material, and an etching mask film. The etching mask film is a silicon oxide base material film formed of a composition comprising a hydrolytic condensate of a hydrolyzable silane, a crosslink promoter, and an organic solvent and having a thickness of 1-10 nm. The etching mask film has high resistance to chlorine dry etching, ensuring high-accuracy processing of the photomask blank.
    Type: Application
    Filed: March 26, 2010
    Publication date: September 30, 2010
    Inventors: Satoshi WATANABE, Ryuji Koitabashi, Shinichi Igarashi, Yoshio Kawai, Shozo Shirai
  • Publication number: 20100209849
    Abstract: A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.
    Type: Application
    Filed: February 18, 2010
    Publication date: August 19, 2010
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takeru Watanabe, Masashi Iio, Jun Hatakeyama, Tsunehiro Nishi, Yoshio Kawai
  • Patent number: 7741015
    Abstract: A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.
    Type: Grant
    Filed: February 12, 2008
    Date of Patent: June 22, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Takao Yoshihara, Takeshi Kinsho, Koji Hasegawa, Yoshio Kawai, Katsuya Takemura
  • Publication number: 20100055621
    Abstract: There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.
    Type: Application
    Filed: July 27, 2009
    Publication date: March 4, 2010
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Kazuhiro Katayama, Yoshio Kawai
  • Patent number: 7666967
    Abstract: A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.
    Type: Grant
    Filed: November 30, 2006
    Date of Patent: February 23, 2010
    Assignees: Shin-Etsu Chemical Co., Ltd., Panasonic Corporation, Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Patent number: 7569323
    Abstract: A resist protective coating material is provided comprising an ?-trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography.
    Type: Grant
    Filed: July 26, 2006
    Date of Patent: August 4, 2009
    Assignees: Shin-Etsu Chemical Co., Ltd., Panasonic Corporation, Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masayuki Endo, Masaru Sasago, Haruhiko Komoriya, Michitaka Ootani, Satoru Miyazawa, Kazuhiko Maeda
  • Publication number: 20090053651
    Abstract: A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of up to 180 nm wavelength or EB; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.
    Type: Application
    Filed: August 19, 2008
    Publication date: February 26, 2009
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun HATAKEYAMA, Takao YOSHIHARA, Katsuya TAKEMURA, Yoshio KAWAI
  • Patent number: 7488567
    Abstract: A polymer comprising recurring units of formula (1) wherein R1 is F or fluoroalkyl, R2 is alkylene or fluoroalkylene, and R3 is an acid labile group and having a Mw of 1,000-500,000 is used to formulate a resist composition, which is processed by the lithography involving ArF exposure and offers many advantages including resolution, minimal line edge roughness, etch resistance, and minimal surface roughness after etching. The composition performs well when processed by the ArF immersion lithography with liquid interposed between the projection lens and the wafer.
    Type: Grant
    Filed: May 25, 2006
    Date of Patent: February 10, 2009
    Assignees: Panasonic Corporation, Central Glass Co., Ltd., Shin-Etsu Chemical Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Publication number: 20080199806
    Abstract: A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.
    Type: Application
    Filed: February 12, 2008
    Publication date: August 21, 2008
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun HATAKEYAMA, Takao YOSHIHARA, Takeshi KINSHO, Koji HASEGAWA, Yoshio KAWAI, Katsuya TAKEMURA
  • Patent number: 7378218
    Abstract: A fluorinated polymer comprising recurring units of formulae (1a) to (1d) and having a Mw of 1,000-500,000 is provided. R1 is an acid labile group, R2 is a single bond or methylene, a1, a2, a3, and a4 are numbers from more than 0 to less than 1, and 0<a1+a2+a3+a4?1, b is 1 or 2, and c is 0 or 1.
    Type: Grant
    Filed: February 2, 2006
    Date of Patent: May 27, 2008
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Patent number: 7354693
    Abstract: In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from an overlay material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble material is used as the overlay material.
    Type: Grant
    Filed: August 4, 2005
    Date of Patent: April 8, 2008
    Assignees: Shin-Etsu Chemical Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yoshio Kawai, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Patent number: 7332616
    Abstract: The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few.
    Type: Grant
    Filed: February 8, 2007
    Date of Patent: February 19, 2008
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Patent number: 7276623
    Abstract: Ester compounds having formula (1) wherein R1 is fluorine or C1-C10 fluoroalkyl, R2 is C1-C10 alkylene or fluoroalkylene, and R3 is an acid labile group are novel. They can be polymerized into polymers which are used to formulate resist compositions, which are processed by the lithography involving ArF exposure, offering many advantages including improved resolution and transparency, minimal line edge roughness, improved etch resistance, and especially minimal surface roughness after etching.
    Type: Grant
    Filed: May 25, 2006
    Date of Patent: October 2, 2007
    Assignees: Shin-Etsu Chemical Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Publication number: 20070185226
    Abstract: The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few.
    Type: Application
    Filed: February 8, 2007
    Publication date: August 9, 2007
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Patent number: 7241553
    Abstract: A chemically amplified resist composition using an alternating copolymer of ?-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: July 10, 2007
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Kazuhiro Yamanaka
  • Patent number: 7232641
    Abstract: The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: June 19, 2007
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Publication number: 20070128555
    Abstract: A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.
    Type: Application
    Filed: November 30, 2006
    Publication date: June 7, 2007
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Patent number: 7189493
    Abstract: There is disclosed a polymer which at least has the repeating unit represented by the following general formula (1a), and the repeating unit represented by the following general formula (1b) and/or the repeating unit represented by the following general formula (1c), and a positive resist composition comprising the polymer as a base resin.
    Type: Grant
    Filed: September 21, 2004
    Date of Patent: March 13, 2007
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Publication number: 20070026341
    Abstract: A resist protective coating material is provided comprising an ?-trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography.
    Type: Application
    Filed: July 26, 2006
    Publication date: February 1, 2007
    Applicants: SHIN-ETSU CHEMICAL CO., LTD., MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., CENTRAL GLASS CO., LTD.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masayuki Endo, Masaru Sasago, Haruhiko Komoriya, Michitaka Ootani, Satoru Miyazawa, Kazuhiko Maeda
  • Patent number: 7169869
    Abstract: A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: July 13, 2005
    Date of Patent: January 30, 2007
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya