Patents by Inventor Yoshio Kawai

Yoshio Kawai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PATTERNING PROCESS AND RESIST COMPOSITION
    Publication number: 20080199806
    Abstract: A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.
    Type: Application
    Filed: February 12, 2008
    Publication date: August 21, 2008
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun HATAKEYAMA, Takao YOSHIHARA, Takeshi KINSHO, Koji HASEGAWA, Yoshio KAWAI, Katsuya TAKEMURA
  • Polymer, resist composition and patterning process
    Patent number: 7378218
    Abstract: A fluorinated polymer comprising recurring units of formulae (1a) to (1d) and having a Mw of 1,000-500,000 is provided. R1 is an acid labile group, R2 is a single bond or methylene, a1, a2, a3, and a4 are numbers from more than 0 to less than 1, and 0<a1+a2+a3+a4?1, b is 1 or 2, and c is 0 or 1.
    Type: Grant
    Filed: February 2, 2006
    Date of Patent: May 27, 2008
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Polymer, resist protective coating material, and patterning process
    Patent number: 7354693
    Abstract: In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from an overlay material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble material is used as the overlay material.
    Type: Grant
    Filed: August 4, 2005
    Date of Patent: April 8, 2008
    Assignees: Shin-Etsu Chemical Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yoshio Kawai, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Polymerizable compound, polymer, positive-resist composition, and patterning process using the same
    Patent number: 7332616
    Abstract: The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few.
    Type: Grant
    Filed: February 8, 2007
    Date of Patent: February 19, 2008
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Polymerizable ester compounds
    Patent number: 7276623
    Abstract: Ester compounds having formula (1) wherein R1 is fluorine or C1-C10 fluoroalkyl, R2 is C1-C10 alkylene or fluoroalkylene, and R3 is an acid labile group are novel. They can be polymerized into polymers which are used to formulate resist compositions, which are processed by the lithography involving ArF exposure, offering many advantages including improved resolution and transparency, minimal line edge roughness, improved etch resistance, and especially minimal surface roughness after etching.
    Type: Grant
    Filed: May 25, 2006
    Date of Patent: October 2, 2007
    Assignees: Shin-Etsu Chemical Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • NOVEL POLYMERIZABLE COMPOUND, POLYMER, POSITIVE-RESIST COMPOSITION, AND PATTERNING PROCESS USING THE SAME
    Publication number: 20070185226
    Abstract: The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few.
    Type: Application
    Filed: February 8, 2007
    Publication date: August 9, 2007
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Polymer, resist composition, and patterning process
    Patent number: 7241553
    Abstract: A chemically amplified resist composition using an alternating copolymer of ?-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: July 10, 2007
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Kazuhiro Yamanaka
  • Polymerizable compound, polymer, positive-resist composition, and patterning process using the same
    Patent number: 7232641
    Abstract: The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: June 19, 2007
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Novel ester compound, polymer, resist composition, and patterning process
    Publication number: 20070128555
    Abstract: A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.
    Type: Application
    Filed: November 30, 2006
    Publication date: June 7, 2007
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Polymer, positive resist composition, and patterning process using the same
    Patent number: 7189493
    Abstract: There is disclosed a polymer which at least has the repeating unit represented by the following general formula (1a), and the repeating unit represented by the following general formula (1b) and/or the repeating unit represented by the following general formula (1c), and a positive resist composition comprising the polymer as a base resin.
    Type: Grant
    Filed: September 21, 2004
    Date of Patent: March 13, 2007
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Resist protective coating material and patterning process
    Publication number: 20070026341
    Abstract: A resist protective coating material is provided comprising an ?-trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography.
    Type: Application
    Filed: July 26, 2006
    Publication date: February 1, 2007
    Applicants: SHIN-ETSU CHEMICAL CO., LTD., MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., CENTRAL GLASS CO., LTD.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masayuki Endo, Masaru Sasago, Haruhiko Komoriya, Michitaka Ootani, Satoru Miyazawa, Kazuhiko Maeda
  • Polymers, resist compositions and patterning process
    Patent number: 7169869
    Abstract: A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: July 13, 2005
    Date of Patent: January 30, 2007
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya
  • Polymer, resist composition and patterning process
    Publication number: 20060269871
    Abstract: A polymer comprising recurring units of formula (1) wherein R1 is F or fluoroalkyl, R2 is alkylene or fluoroalkylene, and R3 is an acid labile group and having a Mw of 1,000-500,000 is used to formulate a resist composition, which is processed by the lithography involving ArF exposure and offers many advantages including resolution, minimal line edge roughness, etch resistance, and minimal surface roughness after etching. The composition performs well when processed by the ArF immersion lithography with liquid interposed between the projection lens and the wafer.
    Type: Application
    Filed: May 25, 2006
    Publication date: November 30, 2006
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Novel polymerizable ester compounds
    Publication number: 20060269870
    Abstract: Ester compounds having formula (1) wherein R1 is fluorine or C1-C10 fluoroalkyl, R2 is C1-C10 alkylene or fluoroalkylene, and R3 is an acid labile group are novel. They can be polymerized into polymers which are used to formulate resist compositions, which are processed by the lithography involving ArF exposure, offering many advantages including improved resolution and transparency, minimal line edge roughness, improved etch resistance, and especially minimal surface roughness after etching.
    Type: Application
    Filed: May 25, 2006
    Publication date: November 30, 2006
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Polymers, resist compositions and patterning process
    Patent number: 7125643
    Abstract: A polymer comprising recurring units of formula (1) and recurring units of formulae (2a) to (2d) wherein R1 is F or fluoroalkyl, R2 is a single bond or an alkylene or fluoroalkylene, R3 and R4 are H, F, alkyl or fluoroalkyl, at least one of R3 and R4 contains F, R5 is H or an acid labile group, R6 is an acid labile group, adhesive group, alkyl or fluoroalkyl, and “a” is 1 or 2 is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance.
    Type: Grant
    Filed: October 21, 2004
    Date of Patent: October 24, 2006
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Kazuhiro Yamanaka
  • Polymers, resist compositions and patterning process
    Patent number: 7125641
    Abstract: A polymer comprising recurring units of (1a) or (1b) wherein R1 is an acid labile group, adhesive group or fluoroalkyl, R2 is H, F, alkyl or fluoroalkyl, R3 and R4 each are a single bond, alkylene or fluoroalkylene, R5 is H or an acid labile group, “a” is 1 or 2, 0<U11<1 and 0<U12<1 and having a Mw of 1,000–500,000 is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.
    Type: Grant
    Filed: February 9, 2004
    Date of Patent: October 24, 2006
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Satoru Miyazawa
  • Sulfonates, polymers, resist compositions and patterning process
    Patent number: 7125642
    Abstract: A sulfonate compound having formula (1) is novel wherein R1 to R3 are H, F or C1-20 alkyl or fluoroalkyl, at least one of R1 to R3 contains F.
    Type: Grant
    Filed: February 9, 2004
    Date of Patent: October 24, 2006
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Satoru Miyazawa
  • Polymer, resist composition and patterning process
    Publication number: 20060177765
    Abstract: A fluorinated polymer comprising recurring units of formulae (1a) to (1d) and having a Mw of 1,000-500,000 is provided. R1 is an acid labile group, R2 is a single bond or methylene, a1, a2, a3, and a4 are numbers from more than 0 to less than 1, and 0<a1+a2+a3+a4?1, b is 1 or 2, and c is 0 or 1. A resist composition comprising the polymer, when processed by the lithography involving ArF exposure, has many advantages including resolution, line edge roughness, etch resistance.
    Type: Application
    Filed: February 2, 2006
    Publication date: August 10, 2006
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Polymers, resist compositions and patterning process
    Patent number: 7067231
    Abstract: A polymer comprising recurring units having a partial structure of formula (1) wherein R1 is a single bond or alkylene or fluoroalkylene, R2 and R3 are H or alkyl or fluoroalkyl, at least one of R2 and R3 contains at least one fluorine atom is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance
    Type: Grant
    Filed: October 21, 2004
    Date of Patent: June 27, 2006
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Kazuhiro Yamanaka
  • Polymers, resist compositions and patterning process
    Patent number: 7005228
    Abstract: A ternary copolymer comprising units of ?-trifluoromethylacrylic carboxylate having acid labile groups substituted thereon, units of ?-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: June 25, 2002
    Date of Patent: February 28, 2006
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda