Patents by Inventor Yoshio Kawai

Yoshio Kawai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resist compositions and patterning process
    Patent number: 7001707
    Abstract: A resist composition comprising a blend of a cyclic polymer having alcoholic groups as soluble groups and a polymer having carboxyl or hexafluoroalcohol groups whose hydrogen atoms are replaced by acid labile groups as a base resin forms a resist film which is improved in transparency, alkali dissolution contrast and plasma etching resistance.
    Type: Grant
    Filed: August 25, 2004
    Date of Patent: February 21, 2006
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Kazuhiro Yamanaka
  • Polymer, resist protective coating material, and patterning process
    Publication number: 20060029884
    Abstract: In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from an overlay material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble material is used as the overlay material.
    Type: Application
    Filed: August 4, 2005
    Publication date: February 9, 2006
    Applicants: Shin-Etsu Chemical Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yoshio Kawai, Kazuhiko Maeda, Haruhiko Komoriya, Michitaka Ootani
  • Rinse and resist patterning process using the same
    Publication number: 20050284502
    Abstract: A rinse comprising a water-soluble polymer is suited for use in a lithographic process. In the lithographic process for the fabrication of semiconductor integrated circuits involving the exposure of resist to various types of radiation (e.g., UV, deep UV, vacuum UV, electron beams, x-rays, and laser beams), the invention can prevent resist insoluble components from generating on and attaching to the resist film or substrate, and if insoluble components attach, can effectively remove the insoluble components, thus avoiding a lowering of production yield by defects resulting from the insoluble components.
    Type: Application
    Filed: June 23, 2005
    Publication date: December 29, 2005
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Satoshi Watanabe, Tomohiro Kobayashi, Yoshio Kawai, Toshinobu Ishihara
  • Polymers, resist compositions and patterning process
    Publication number: 20050267275
    Abstract: A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.
    Type: Application
    Filed: July 13, 2005
    Publication date: December 1, 2005
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya
  • Polymer, resist composition, and patterning process
    Publication number: 20050221221
    Abstract: A chemically amplified resist composition using an alternating copolymer of ?-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness.
    Type: Application
    Filed: January 27, 2005
    Publication date: October 6, 2005
    Applicants: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Kazuhiro Yamanaka
  • Polymers, resist compositions and patterning process
    Patent number: 6946235
    Abstract: A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: August 8, 2003
    Date of Patent: September 20, 2005
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya
  • Polymers, resist compositions and patterning process
    Patent number: 6933095
    Abstract: A copolymer of an acrylate monomer containing fluorine at ?-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: June 25, 2002
    Date of Patent: August 23, 2005
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
  • Polymer, resist composition, and patterning process
    Publication number: 20050175935
    Abstract: A chemically amplified resist composition comprising an alternating copolymer of an acrylate monomer having a fluoroalkyl group at alpha-position with a norbornene derivative, when processed through ArF excimer laser exposure by lithography, is improved in resolution and dry etching resistance and minimized in line edge roughness.
    Type: Application
    Filed: February 8, 2005
    Publication date: August 11, 2005
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Kazuhiro Yamanaka
  • Esters, polymers, resist compositions and patterning process
    Patent number: 6916592
    Abstract: A resist composition comprising a base polymer having a fluorinated sulfonate or fluorinated sulfone introduced therein is sensitive to high-energy radiation, has excellent transparency, contrast and adherence, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: March 25, 2003
    Date of Patent: July 12, 2005
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya
  • Polymers, resist compositions and patterning process
    Publication number: 20050106499
    Abstract: A polymer comprising recurring units of formula (1) and recurring units of formulae (2a) to (2d) wherein R1 is F or fluoroalkyl, R2 is a single bond or an alkylene or fluoroalkylene, R3 and R4 are H, F, alkyl or fluoroalkyl, at least one of R3 and R4 contains F, R5 is H or an acid labile group, R6 is an acid labile group, adhesive group, alkyl or fluoroalkyl, and “a” is 1 or 2 is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance.
    Type: Application
    Filed: October 21, 2004
    Publication date: May 19, 2005
    Inventors: Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shirrji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Kazuhiro Yamanaka
  • Polymers, resist compositions and patterning process
    Publication number: 20050089797
    Abstract: A polymer comprising recurring units having a partial structure of formula (1) wherein R1 is a single bond or alkylene or fluoroalkylene, R2 and R3 are H or alkyl or fluoroalkyl, at least one of R2 and R3 contains at least one fluorine atom is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance.
    Type: Application
    Filed: October 21, 2004
    Publication date: April 28, 2005
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Kazuhiro Yamanaka
  • Resist compositions and patterning process
    Publication number: 20050084796
    Abstract: A resist composition comprising a blend of a cyclic polymer having alcoholic groups as soluble groups and a polymer having carboxyl or hexafluoroalcohol groups whose hydrogen atoms are replaced by acid labile groups as a base resin forms a resist film which is improved in transparency, alkali dissolution contrast and plasma etching resistance.
    Type: Application
    Filed: August 25, 2004
    Publication date: April 21, 2005
    Applicants: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Kazuhiro Yamanaka
  • Novel polymer, positive resist composition, and patterning process using the same
    Publication number: 20050079440
    Abstract: There is disclosed a polymer which at least has the repeating unit represented by the following general formula (1a), and the repeating unit represented by the following general formula (1b) and/or the repeating unit represented by the following general formula (1c), and a positive resist composition comprising the polymer as a base resin. There can be provided a positive resist composition having high sensitivity and high resolution on exposure to a high energy beam, wherein line edge roughness is reduced since swelling at the time of development is suppressed, and the residue after development is little.
    Type: Application
    Filed: September 21, 2004
    Publication date: April 14, 2005
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same
    Publication number: 20050079446
    Abstract: The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few.
    Type: Application
    Filed: September 30, 2004
    Publication date: April 14, 2005
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Optical path switching device and add/drop optical switch
    Publication number: 20050074202
    Abstract: An optical switch for switching an optical path includes a fixed reflection element disposed at each of crossing points of a plurality of lines and a plurality of redundant lines for switching the optical path to one of the redundant lines, and a movable optical unit disposed at each of the crossing points and including an optical path parallel move element. The optical path parallel move element has parallel surfaces for moving the optical path in parallel toward the fixed reflection element. The movable optical unit located on the optical path of one of collimators moves in and out the optical path incident from an auxiliary collimator to switch the optical path when the one of the collimators has a problem.
    Type: Application
    Filed: September 23, 2004
    Publication date: April 7, 2005
    Inventors: Takayuki Ojima, Kentaro Harase, Yoshio Kawai, Hideharu Kajizuka, Takurou Horinaka, Atsuo Ishi
  • Resist compositions and patterning process
    Patent number: 6875556
    Abstract: A resist composition comprising as the base resin a blend of a fluorinated polymer which is sensitive to high-energy radiation and highly transparent at a wavelength of up to 200 nm and a sulfonate-containing polymer exhibiting a high contrast upon alkali dissolution is improved in transparency and alkali dissolution contrast as well as plasma etching resistance.
    Type: Grant
    Filed: October 23, 2003
    Date of Patent: April 5, 2005
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Satoru Miyazawa
  • Polymers, resist compositions and patterning process
    Patent number: 6872514
    Abstract: A resist composition comprising a base polymer having a fluorinated sulfonate or fluorinated sulfone introduced therein is sensitive to high-energy radiation below 300 nm, has excellent transparency, contrast and adherence, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: March 25, 2003
    Date of Patent: March 29, 2005
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya
  • Resist compositions and patterning process
    Patent number: 6866983
    Abstract: A resist composition comprising a blend of a polymer comprising recurring units k and m of formula (1) wherein R1 and R2 each are hydrogen or an acid labile group, 0<k<1, 0<m<1 and 0<k+m?1, and another polymer comprising recurring units having carboxyl groups whose hydrogen atoms are replaced by acid labile groups as a base resin forms a resist film which is improved in transparency, alkali dissolution contrast and plasma etching resistance.
    Type: Grant
    Filed: April 4, 2003
    Date of Patent: March 15, 2005
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Polymers, resist compositions and patterning process
    Patent number: 6864037
    Abstract: A copolymer of an acrylic monomer having at least one C6-20 alicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: June 25, 2002
    Date of Patent: March 8, 2005
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co. Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
  • Polymers, resist compositions and patterning process
    Patent number: 6861197
    Abstract: A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.
    Type: Grant
    Filed: February 28, 2002
    Date of Patent: March 1, 2005
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Watanabe, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda