Patents by Inventor Yoshio Kawai

Yoshio Kawai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemically amplified resist compositions and patterning process
    Patent number: 6855477
    Abstract: A chemically amplified resist composition comprising (A) a polymer comprising recurring units containing at least one fluorine atom, (B) a compound of formula (1) wherein R1 and R2 are H, F or alkyl or fluorinated alkyl, at least one of R1 and R2 contains at least one fluorine atom, R3 is a single bond or alkylene, R4 is a n-valent aromatic or cyclic diene group, R5 is H or C(?O)R6, R6 is H or methyl, and n is 2, 3 or 4, (C) an organic solvent, and (D) a photoacid generator is sensitive to high-energy radiation and has improved sensitivity and transparency at a wavelength of less than 200 nm.
    Type: Grant
    Filed: September 27, 2002
    Date of Patent: February 15, 2005
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Haruhiko Komoriya, Kazuhiko Maeda
  • Onium salts and positive resist materials using the same
    Patent number: 6841334
    Abstract: Disclosed are novel onium salts represented by general formula (R)3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of forming the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.
    Type: Grant
    Filed: October 10, 2003
    Date of Patent: January 11, 2005
    Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone Corporation
    Inventors: Fujio Yagihashi, Tomoyoshi Furihata, Jun Watanabe, Akinobu Tanaka, Yoshio Kawai, Tadahito Matsuda
  • Polymers, resist compositions and patterning process
    Patent number: 6824955
    Abstract: A resist composition comprising a copolymer of an acrylic ester monomer containing fluorine at &agr;-position with a norbornene derivative containing oxygen or sulfur within the norbornene ring as a base resin is sensitive to high-nergy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: December 26, 2002
    Date of Patent: November 30, 2004
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya
  • Polymers, resist compositions and patterning process
    Patent number: 6790591
    Abstract: A resist composition comprising a fluorinated polymer having carboxylate pendants and with a weight average molecular weight of 1,000-500,000 as a base resin is sensitive to high-energy radiation below 200 nm, has high transparency, resolution and plasma etching resistance, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: April 4, 2003
    Date of Patent: September 14, 2004
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai
  • Resist compositions and patterning process
    Patent number: 6790586
    Abstract: A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F2 excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.
    Type: Grant
    Filed: September 7, 2001
    Date of Patent: September 14, 2004
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Jun Watanabe, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
  • Sulfonates, polymers, resist compositions and patterning process
    Publication number: 20040157156
    Abstract: A sulfonate compound having formula (1) is novel wherein R1 to R3 are H, F or C1-20 alkyl or fluoroalkyl, at least one of R1 to R3 contains F. A polymer comprising units derived from the sulfonate compound is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.
    Type: Application
    Filed: February 9, 2004
    Publication date: August 12, 2004
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Satoru Miyazawa
  • Polymers, resist compositions and patterning process
    Publication number: 20040157155
    Abstract: A polymer comprising recurring units of (1a) or (1b) wherein R1 is an acid labile group, adhesive group or fluoroalkyl, R2 is H, F, alkyl or fluoroalkyl, R3 and R4 each are a single bond, alkylene or fluoroalkylene, R5 is H or an acid labile group, “a” is 1 or 2, 0<U11<1 and 0<U12<1 and having a Mw of 1,000-500,000 is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.
    Type: Application
    Filed: February 9, 2004
    Publication date: August 12, 2004
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Satoru Miyazawa
  • Resist compositions and patterning process
    Publication number: 20040144752
    Abstract: A resist composition comprising as the base resin a blend of a fluorinated polymer which is sensitive to high-energy radiation and highly transparent at a wavelength of up to 200 nm and a sulfonate-containing polymer exhibiting a high contrast upon alkali dissolution is improved in transparency and alkali dissolution contrast as well as plasma etching resistance.
    Type: Application
    Filed: October 23, 2003
    Publication date: July 29, 2004
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Satoru Miyazawa
  • Onium salts and positive resist materials using the same
    Publication number: 20040076905
    Abstract: Disclosed are novel onium salts represented by general formula (R)3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of forming the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.
    Type: Application
    Filed: October 10, 2003
    Publication date: April 22, 2004
    Inventors: Fujio Yagihashi, Tomoyoshi Furihata, Jun Watanabe, Akinobu Tanaka, Yoshio Kawai, Tadahito Matsuda
  • Polymers, resist compositions and patterning process
    Patent number: 6710148
    Abstract: A copolymer of an acrylate monomer containing fluorine at &agr;-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: February 8, 2002
    Date of Patent: March 23, 2004
    Assignees: Shin Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Jun Watanabe, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
  • Polymers, resist compositions and patterning process
    Publication number: 20040030079
    Abstract: A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.
    Type: Application
    Filed: August 8, 2003
    Publication date: February 12, 2004
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya
  • Fluorinated polymer
    Publication number: 20040023176
    Abstract: ABSTRACT A fluorinated polymer having a polydispersity index (Mw/Mn) of 1-1.20 can be prepared by subjecting an aromatic monomer having trifluoromethyl groups and acid labile groups to living anion polymerization. The fluorinated polymer is suitable for use in chemically amplified resist compositions having sensitivity to ultraviolet radiation.
    Type: Application
    Filed: July 30, 2003
    Publication date: February 5, 2004
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Michitaka Ootani, Haruhiko Komoriya, Kazuhiko Maeda
  • Ester compounds
    Patent number: 6680389
    Abstract: Acrylic esters containing fluorine at &agr;-position and having a lactone ring introduced into the ester side chain thereof are novel. Polymers obtained from the acrylic esters have a high transparency to VUV and good adhesion to substrates and are used to formulate chemically amplified resist compositions for lithographic microfabrication.
    Type: Grant
    Filed: June 25, 2002
    Date of Patent: January 20, 2004
    Assignees: Sihn-Etsu Chemical Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
  • Tertiary butyl 4,4-bis(4?-hydroxyphenyl) pentanoate derivatives and positive resist materials containing the same
    Patent number: 6667415
    Abstract: Disclosed are novel tert-butyl 4,4-bis(4′-hydroxyphenyl)pentanoate derivatives represented by the following general formula (I); wherein R1 represents a protective group which can be readily eliminated under an acidic condition, and R2 represents a hydrogen atom, a lower alkyl group or a lower alkoxy group: and high energy radiation-responsive positive resist materials using said novel derivatives as dissolution inhibitors.
    Type: Grant
    Filed: September 2, 1994
    Date of Patent: December 23, 2003
    Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone Corp.
    Inventors: Fujio Yagihashi, Jun Watanabe, Minoru Takamizawa, Akinobu Tanaka, Yoshio Kawai, Tadahito Matsuda
  • Novel esters, polymers, resist compositions and patterning process
    Publication number: 20030219678
    Abstract: A resist composition comprising a base polymer having a fluorinated sulfonate or fluorinated sulfone introduced therein is sensitive to high-energy radiation, has excellent transparency, contrast and adherence, and is suited for lithographic microprocessing.
    Type: Application
    Filed: March 25, 2003
    Publication date: November 27, 2003
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya
  • Polymers, resist compositions and patterning process
    Publication number: 20030215739
    Abstract: A resist composition comprising a base polymer having a fluorinated sulfonate or fluorinated sulfone introduced therein is sensitive to high-energy radiation below 300 nm, has excellent transparency, contrast and adherence, and is suited for lithographic microprocessing.
    Type: Application
    Filed: March 25, 2003
    Publication date: November 20, 2003
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya
  • Polymers, resist compositions and patterning process
    Publication number: 20030194645
    Abstract: A resist composition comprising a fluorinated polymer having carboxylate pendants and with a weight average molecular weight of 1,000-500,000 as a base resin is sensitive to high-energy radiation below 200 nm, has high transparency, resolution and plasma etching resistance, and is suited for lithographic microprocessing.
    Type: Application
    Filed: April 4, 2003
    Publication date: October 16, 2003
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai
  • Resist compositions and patterning process
    Publication number: 20030194644
    Abstract: A resist composition comprising a blend of a polymer comprising recurring units k and m of formula (1) wherein R1 and R2 each are hydrogen or an acid labile group, 0<k<1, 0<m<1 and 0<k+m≦1, and another polymer comprising recurring units having carboxyl groups whose hydrogen atoms are replaced by acid labile groups as a base resin forms a resist film which is improved in transparency, alkali dissolution contrast and plasma etching resistance.
    Type: Application
    Filed: April 4, 2003
    Publication date: October 16, 2003
    Inventors: Jun Hatakeyama, Yuji Harada, Yoshio Kawai
  • Polymers, resist compositions and patterning process
    Patent number: 6623909
    Abstract: Polymers comprising recurring units of formula (1) are provided wherein R1 is a straight, branched or cyclic divalent C1-20 hydrocarbon group or a bridged cyclic hydrocarbon group, R is hydrogen atom or an acid labile group, 0≦m≦3, 0≦n≦3 and 0≦m+n≦6. Using the polymers, chemical amplification positive resist compositions featuring low absorption of F2 excimer laser light are obtained.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: September 23, 2003
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Toshiaki Takahashi, Toshinobu Ishihara, Jun Watanabe, Tohru Kubota, Yoshio Kawai
  • Polymers, resist compositions and patterning process
    Publication number: 20030165773
    Abstract: A resist composition comprising a copolymer of an acrylic ester monomer containing fluorine at &agr;-position with a norbornene derivative containing oxygen or sulfur within the norbornene ring as a base resin is sensitive to high-nergy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.
    Type: Application
    Filed: December 26, 2002
    Publication date: September 4, 2003
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya