Abstract: A knit slide fastener including a fastener tape composed of a warp-knit ground structure including chain stitches, and a row of continuous coupling elements knit into and along an element-supporting portion of the fastener tape as the fastener tape is knit, wherein a plurality of threads are knit into the element-supporting portion as binding chain stitches, so as to form a group of successive longitudinally interlocked needle loops appearing on the front side and arranged such that in every two adjacent courses, the preceding needle loop overlies an upper leg of one coupling element, and the succeeding needle loop is disposed in a space between the coupling element and an adjacent coupling element at a position close to the ground structure so as to bend or flex the preceding needle loop into an inverted U shape extending embracingly over the upper and lower legs of the coupling element.

Abstract: A knit slide fastener of the type including a warp-knit fastener tape having a ground structure composed of chain stitches, and a row of continuous coupling elements knit into and along an element-supporting portion of one longitudinal edge portion of the fastener tape as the fastener tape is knit, wherein binding chain stitches are knit into the element-supporting portion to secure the row of coupling elements to the longitudinal tape edge portion, the binding chain stitches having sinker loops urging pairs of legs of the coupling elements toward the element-supporting portion, and needle loops intertwined with needle loops of the chain stitches of the ground structure. With this arrangement, the longitudinal tape edge portion has a knit structure which is relatively tight and substantially non-stretchable in the longitudinal direction.

Abstract: A semiconductor memory device comprises two memory cell arrays (1a, 1b) in which a block divisional operation is performed. Two spare rows (2a, 2b) are provided corresponding to the two memory cell arrays (1a, 1b). Spare row decoders (5a, 5b) are provided for selecting the spare rows (2a, 2b), respectively. One spare row decoder selecting signal generation circuit (18) used in common by the spare row decoders (5a, 5b) is provided. The spare row decoder selecting signal generation circuit (18) can be previously set so as to generate a spare row decoder selecting signal (SRE) when a defective row exists in either of the memory cell arrays (1a, 1b) and the defective row is selected by row decoder groups (4a, 4b). Each of the spare row decoders (5a, 5b) is activated in response to the spare row decoder selecting signal (SRE) and a block control signal.

Abstract: A method for manufacturing a curved surface multi-layer wiring board having the through-holes and high accurate inner patters with a high reliability. A curved surface multi-layer wiring board is manufactured by processes for forming the inner pattern on the copper clad substrates, and for perforating the holes to the substrates and prepregs, and for laying-up these substrates and prepregs, then for pressing these substrates and prepregs in the formation mould. Then the outer pattern are formed by the laser exposure process after the through holes are connected between the layers. A method is also provided for repeating the laying-up processes in order to obtain a curved surface multi-layer wiring board of which is a three dimensional curved surface.

Abstract: A semiconductor memory device of folded bit line structure provided with a cross portion in at least one portion of each of bit line pairs so that values of coupling capacitance with adjacent bit line pairs are equal to each other with respect to the paired bit lines.Preferably, the respective bit line pairs are equally divided into 4N and the cross parts are provided at dividing points so that bit line pairs having the cross parts at the same dividing points are arranged on alternate pairs of bit lines.Preferably, the cross parts are provided in regions for forming restore circuits or sense amplifiers.More preferably, a dummy word line for selecting dummy cells for providing reference potential is selected by the position of a selected word line.

Abstract: A method for manufacturing a curved surface multi-layer wiring board having highly accurate inner patterns with high reliability. A curved surface multi-layer wiring board is manufactured by providing and pressing a prepreg to form a curved surface, and by plating a copper film on the curved surface. Outer patterns are formed on the copper film. The outer patterns may be formed by a laser exposure process after through-holes are connected between the layers. A method is also provided for repeating the process to obtain a curved surface multi-layer wiring board which has a three dimensional curved surface.

Abstract: A semiconductor memory device of folded bit line structure provided with a cross portion in at least one portion of each of bit line pairs so that values of coupling capacitance with adjacent bit line pairs are equal to each other with respect to the paired bit lines.Preferably, the respective bit line pairs are equally divided into 4N and the cross parts are provided at dividing points so that bit line pairs having the cross parts at the same dividing points are arranged on alternate pairs of bit lines.Preferably, the cross parts are provided in regions for forming restore circuits or sense amplifiers.More preferably, a dummy word line for selecting dummy cells for providing reference potential is selected by the position of a selected word line.

Abstract: A crosspoint LSI adapted to an exchanger in ISDN, for transmission of asynchronous transfer mode (ATM) cells in communication is provided. The crosspoint switching LSI includes many unit switch cells arranged in rows and columns. When a unit switch cell is turned on, the unit switch cell responds to a differential data signal on an input data line to drive differentially an output data line pair. The unit switch cells operate differentially so that the data signals of the ATM cells are transmitted, which improves a signal transmission rate.

Abstract: A semiconductor memory device operable for reading and writing in a normal mode and in a test mode is divided into memory cell sections each having blocks of memory cells. Data bus lines are connected to the respective blocks, and switches interconnect data bus lines connected to blocks of the different sections. The switch are made conductive during reading and writing in the normal mode and during writing in the test mode, and nonconductive during reading in the test mode. Input data are applied onto the data bus lines connected to one of the blocks for writing in the blocks of the sections simultaneously during writing in the normal mode and in the test mode. In the normal mode, data are read out of the blocks of the sections through the data bus lines connected to the above-mentioned one of the blocks. In the test mode, the data are read out of the blocks of the sections through the data bus lines connected to the respective blocks.

Abstract: A warp-knit cloth for a surface fastener, comprising: a foundation design knitted of pile knitting yarns and foundation yarns so as to form pile loops, which serve as engaging elements of the surface fastener, on wales; a marquisette design in which inlaid yarn extend in the wale direction and course direction so as to form squared meshes, which serve as vents, between said wales.

Abstract: In a block access memory in which the memory cell array is divided into a plurality of blocks and data input/output is carried out by block unit, each block is divided into a plurality of subblocks, and the timing of activating the word line and the timing of activating the sense amplifier are made different for each subblock in the block in which the selected word line is included, whereby the peak current associated with the bit line charge/discharge at the time of activating the sense amplifiers is reduced.

Abstract: A semiconductor memory device comprises a DRAM memory cell array comprising a plurality of dynamic type memory cells arranged in a plurality of rows and columns, and an SRAM memory cell array comprising static type memory cells arranged in a plurality of rows and columns. The DRAM memory cell array is divided into a plurality of blocks each comprising a plurality of columns. The SRAM memory cell array is divided into a plurality of blocks each comprising a plurality of columns, corresponding to the plurality of blocks in the DRAM memory cell array. The SRAM memory cell array is used as a cache memory. At the time of cache hit, data is accessed to the SRAM memory cell array. At the time of cache miss, data is accessed to the DRAM memory cell array. On this occasion, data corresponding to one row in each of the blocks in the DRAM memory cell array is transferred to one row in the corresponding block in the SRAM memory cell array.

Abstract: Incoming lines (I0 to I7) are connected to a space switch (2) through input data latches (1). The space switch (2) is connected to a normal/test changeover switch (12), which is connected to a normal/test changeover switch (13) through serial-to-parallel converting circuits (3), common buffer memories (4) and parallel-to-serial converting circuits (5). Space switches (6) are connected to the normal/test changeover switch (13). Outgoing lines (O0 to O7) are connected to the space switches 6 through output data latches (8). Connection states in the switches (2, 6) are placed in transposed relation to each other by a transposed connection generating circuit (10) in a test operation, so that the switches (2, 6) are directly connected to each other through the switches (12, 13). Predetermined data applied to the incoming lines are intactly used as expected values for judgement of the normal or abnormal operation of the set of switches of matrix structure.

Abstract: A semiconductor memory device operable for reading and writing in a normal mode and in a test mode is divided into memory cell sections each having blocks of memory cells. Data bus lines are connected to the respective blocks, and switches interconnect data bus lines connected to blocks of the different sections. The switch are made conductive during reading and writing in the normal mode and during writing in the test mode, and nonconductive during reading in the test mode. Input data are applied onto the data bus lines connected one of the blocks for writing in the blocks of the sections simultaneously during writing in the normal mode and in the test mode. In the normal mode, data are read out of the blocks of the sections through the data bus lines connected to the above-mentioned one of the blocks. In the test mode, the data are read out of the blocks of the sections through the data bus lines connected to the respective blocks.

Abstract: A semiconductor memory device comprises two memory cell arrays (1a, 1b) in which a block divisional operation is performed. Two spare rows (2a, 2b) are provided corresponding to the two memory cell arrays (1a, 1b). Spare row decoders (5a, 5b) are provided for selecting the spare rows (2a, 2b), respectively. One spare row decoder selecting signal generation circuit (18) used in common by the spare row decoders (5a, 5b) is provided. The spare row decoder selecting signal generation circuit (18) can be previously set so as to generate a spare row decoder selecting signal (SRE) when a defective row exists in either of the memory cell arrays (1a, 1b) and the defective row is selected by row decoder groups (4a, 4b). Each of the spare row decoders (5a, 5b) is activated in response to the spare row decoder selecting signal (SRE) and a block control signal.

Abstract: A semiconductor memory device of folded bit line structure provided with a cross portion in at least one portion of each of bit line pairs so that values of coupling capacitance with adjacent bit line pairs are equal to each other with respect to the paired bit lines. Preferably, the respective bit line pairs are equally divided into 4N and the cross parts are provided at dividing points so that bit line pairs having the cross parts at the same dividing points are arranged on alternate pairs of bit lines. Preferably, the cross parts are provided in regions for forming restore circuits or sense amplifiers. More preferably, a dummy word line for selecting dummy cells for providing reference potential is selected by the position of a selected word line.

Abstract: A dynamic random access memory amplifier arrangement includes a sense amplifier band shared between two different memory blocks. In this memory, only sense amplifiers related to a selected memory block are activated. The memory comprises a circuit for boosting a control signal voltage to a switching unit for connecting the selected memory block to the sense amplifiers up to a level higher than a power supply voltage Vcc during the activation of the sense amplifiers, and a circuit for separating a memory block paired with the selected memory block from the activated sense amplifiers during the sensing operation. The memory further comprises a circuit for generating a control signal of the power supply voltage Vcc and connecting all the memory blocks to the corresponding sense amplifiers in a stand-by state wherein a row address strobe signal is inactive. With this arrangement, a highly reliable memory consuming less power can be achieved which ensures data writing and/or rewriting at a full Vcc level.

Abstract: A dynamic RAM comprises an array of memory cells, each of the memory cells comprising a single access transistor and a charge storage region. The charge storage region comprises a first capacitor memory including a P.sup.+ region serving as an opposite electrode formed in the inner surface of a trench formed in a P type silicon substrate, a first capacitor dielectric film formed on the P.sup.+ region and a common electrode layer serving as a memory terminal formed on the first capacitor dielectric film, and a second memory capacitor including the common electrode layer, a second capacitor dielectric film formed on the common electrode layer and a cell plate electrode formed on the second capacitor dielectric film. The memory terminal and a drain region of the access transistor are connected in a self-aligning manner by an electrode having a sidewall shape which is in contact with an end of the memory terminal.

Abstract: A semiconductor memory device comprises a DRAM memory cell array comprising a plurality of dynamic type memory cells arranged in a plurality of rows and columns, and an SRAM memory cell array comprising static type memory cells arranged in a plurality of rows and columns. The DRAM memory cell array is divided into a plurality of blocks each comprising a plurality of columns. The SRAM memory cell array is divided into a plurality of blocks each comprising a plurality of columns, corresponding to the plurality of blocks in the DRAM memory cell array. The SRAM memory cell array is used as a cache memory. At the time of cache hit, data is accessed to the SRAM memory cell array. At the time of cache miss, data is accessed to the DRAM memory cell array. On this occasion, data corresponding to one row in each of the blocks in the DRAM memory cell array is transferred to one row in the corresponding block in the SRAM memory cell array.

Abstract: A semiconductor memory device with a built-in cache memory comprises a memory cell array (1). The memory cell array (1) is divided into a plurality of blocks (B1 to B16). Each block is divided into a plurality of sub blocks each having a plurality of columns. At the time of a cache hit, block address signals (B0, B1) and a column address signal (CA) are simultaneously applied. Any of the plurality of blocks (B1 to B16) is selected in response to the block address signals (B0, B1). At the same time, any of the plurality of registers (16a) corresponding to the selected block is selected in response to the column address signal (CA).