Abstract: A fixing heater comprises a substrate having an insulative property and a heat generating member with electrical resistance printed on a surface of the substrate. The heat generating member is a film-like shape having a direction and a pair of edge portions opposing one another, wherein one of the edge portions is trimmed in the direction. The heat generating member has a heat generating portion having opposing one and another edge portions, wherein one of the edge portions is trimmed in the direction throughout the heat generating portion. The heat generating portion is trimmed so as to provide the trimmed edge having partially different width along the direction.

Abstract: A solid-state imaging apparatus which effects an electronic shutter operation comprises a solid-state imaging device made up of a plurality of photosensitive pixels arranged in a matrix on a semiconductor substrate, a driving circuit for driving the solid-state imaging device and also controlling the photoelectric conversion time of the photosensitive pixel, a vertical CCD for clipping a first signal obtained during a longer photoelectric conversion time in the solid-state imaging device, at a specified level or above, and then adding the clipped signal to a second signal obtained during a shorter photoelectric conversion time, and a signal processing circuit for amplifying and outputting the added signal, and setting an amplification degree for the second signal to a value larger than an amplification factor for the first signal.

Abstract: A CCD imager has an array of rows and columns of picture elements on a semiconductor substrate. A vertical charge transfer gate section extends in a first direction on the substrate to be associated with the columns. The transfer gate section includes CCD channels in the substrate, and insulated transfer gate electrodes overlying these CCD channels. A plurality of buffer electrodes are formed at a first level over the substrate surface to overlie the transfer gate electrodes. A plurality of shunt wires are formed at a second level over the substrate surface to overlie the buffer electrodes. The charge transfer gate electrodes and the buffer electrodes are connected with each other by first contact holes. The buffer electrodes and the shunt wires are coupled together by second contact holes.

Abstract: A solid-state imaging device includes a substrate, and an array of charge-packet storage cells or picture elements (or "pixels") arranged on the substrate, each including a storage diode that stores therein a signal charge packet indicative of an incident light. A charge transfer section is coupled with the array of picture elements. The transfer section includes a charge-coupled device (CCD) register layer that is spaced apart from the storage diode to define a channel region therebetween, and a first insulated electrode overlying the register layer and the channel region. A reset section is coupled to the storage diode, for potentially resetting the storage diode by additionally injecting an extra charge packet into the storage diode and by causing the charge to drained from the storage diode.

Abstract: A solid state image sensor has a photosensing region formed on a substrate. The photosensing region has a plurality of photocells for receiving an incident image. The photosensing region is capable of changing image sampling modes by relatively shifting image sampling points for the incident image. In the photosensing region, a plurality of first transfer elements are formed and the first transfer elements receive the signal charges from adjoining photocells and transfer them out. Further, a temporary storage region is formed on the substrate having a plurality of second transfer elements therein for each of the first transfer elements. Each of the second transfer elements has a capacity to accommodate all of the signal charges of a corresponding first transfer elements which are read out from the photocells at the same time. A plurality of gate elements are respectively formed between each of the first transfer elements and their corresponding plurality of second transfer elements.

Abstract: A charge-transfer device contains a high-resistance p-well layer formed in the surface of an n-type semiconductor substrate. In the surface of the well layer, a charge-transfer n-channel layer, a charge storage n-channel layer, a charge release n-channel layer, and a charge release n-type drain are formed continuously. An output gate electrode is provided above the junction of the transfer channel layer and the storage channel layer, with an insulating film interposed therebetween. Provided above the release channel layer is a reset gate electrode with an insulating film interposed therebetween. In the surface of the storage channel layer, a charge-sensing p-channel layer of a charge-sensing transistor is formed. The charge-sensing channel layer is arranged so as to be in contact with neither the transfer channel layer nor the release channel layer.

Abstract: The present invention is directed toward an image sensor array comprising a plurality of pixels. Each pixel includes a photodiode and a CCD channel region. An overflow drain region is provided adjacent the CCD channel region for extraction of excess charges. An insulated gate read-out transfer electrode is further provided above the CCD channel region and a portion of the substrate between the CCD channel region and the photodiode. Three different potentials are applied to the read-out transfer electrode for respectively storing charge in the photodiode, extracting excess charge from the photodiode while allowing signal charge to remain in the photodiode, and reading out signal charge from the photodiode.

Abstract: A solid-state imaging device comprises a plurality of photoelectric conversion accumulation sections arranged two-dimensionally on a semiconductor substrate, a plurality of vertical CCDs for vertically transferring signal charges read out from the photoelectric conversion accumulation sections, and a horizontal CCD for receiving and horizontally transferring the signal charges transferred by the vertical CCDs. A gap between transfer electrodes of the horizontal CCD is less than a gap between transfer electrodes of the vertical CCDs. The transfer electrodes of the vertical CCDs have a single-layer electrode structure formed by patterning a first polysilicon film. The transfer electrodes of the horizontal CCD have an overlapping double-layer electrode structure comprising alternately arranged electrodes formed by patterning the first polysilicon film and electrodes intervening between the alternately arranged electrodes which are formed by patterning a second polysilicon film.

Abstract: A solid-state imaging device includes a semiconductor substrate, an array of cells on the substrate, a plurality of vertical charge transfer sections extending in a first direction on the substrate, and a horizontal charge transfer section extending in a second direction transverse to the first direction on the substrate and being coupled to the vertical charge transfer section. The cell array includes a plurality of columns of cells that are associated with a corresponding one of the vertical transfer sections. The cell columns include a predetermined number of spaced-part cells that are series-connected along the second direction to constitute a NAND type cell structure. At least one cell-to-cell charge transfer electrode overlies a channel region as defined between adjacent ones of the NAND cells in the substrate.

Abstract: A solid-state image sensing device includes a semiconductive substrate, an array of photosensitive cells on the substrate, and a transfer section electrically coupled with the array on the substrate, for transferring electrical carriers read from the cells along a predetermined direction. During an image sensing operation, a packet of charge carriers photoelectrically generated in the cells are prevented from continuously staying therein, by forcing the carriers to move into the transfer section, thus causing these carriers to be stored in the transfer section.

Abstract: An FIT or IT solid-state imaging device comprising a p-type Si substrate in which n-type regions forming storage diode portions, signal read-out portions, n-type CCD channels, and p.sup.

Abstract: A heater that has a plate shaped substrate with two holes penetrating through the substrate. Both holes are at one end of the substrate. The heater has a heating film mounted on the surface of the substrate for generating heat. The film is made of electrically conductive material and formed into a stripe shape having a first end and a second end. The first end is located near the hole. The heater also has an end film coated on the surface of the heating film around the hole and electrically connected with the heating film for supplying electric power to the heating film. The end film has higher electrical conductivity than the heating film. The substrate has means provided at the hole for supplying the electric power to the end film. The hole enables high reliability in electrical connection between the outer terminal and the heater because of the hole and the electric power supply means at the hole.

Abstract: A thermal fixing apparatus including a heater and a pressure roller pressed against the heater. The heater has a substrate, an electrical heating element mounted on the substrate and a protective layer covering the electrical heating element, the protective layer having a concave contacting edge. The pressure roller is fitted against the concave contacting edge of the protective layer of the heater.

Abstract: An imaging system includes a solid-state interline-transfer charge-coupled device (IT-CCD) image sensor having a matrix of rows and columns of photosensitive cells for photoelectrically producing electrical charge carriers in response to an incident light introduced thereonto. Vertical charge-transfer sections are arranged adjacent to the columns of cells, for receiving charge carriers therefrom, and for transferring these carriers toward its outputs, which are coupled with a horizontal charge-transfer section. A charge integration amount control unit is associated with the CCD image sensor such that the controller is coupled to the cell matrix and the vertical transfer sections, for controlling movement of charge carriers from the cell columns to the vertical transfer sections in such a manner that odd-numbered cell rows and even-numbered cell rows are different from each other in the effective amount of charge carriers to be read to the vertical transfer sections as effective signal charge packets.

Abstract: A solid-state CCD imaging device has a substrate, photosensitive pixel cells provided as pixel sections in the substrate, and a transfer section, provided in the substrate, for transferring signal charge carriers read out from the pixel cells in a predetermined transfer direction. The transfer section has a semiconductive charge transfer channel layer formed in the substrate and transfer electrodes insulatively provided above the substrate and arrayed in the above direction while predetermined gap sections are kept therebetween. Each of the transfer electrodes defines one charge transfer stage. A gap potential control electrode layer is insulatively disposed above the electrodes.

Abstract: A heater comprises a substrate and an electrically conductive heating section having branched portions on its lateral edge. The heating section has notches at those portions of its lateral edges that are opposite to the branched portions. The notches increase electric resistance of the heating section at the branched portions to enhance heat generation of the heating section at the branched so that the heating section is heated at a predetermined temperature over the entire length of a transfer paper sheet.

Abstract: Disclosed is a solid-state camera comprising a solid-state image sensor element composed of a plurality of planarly arranged units of picture element cells, drive means for supplying a pulse power source thereto, signal process means for obtaining a picture image signal by processing an output signal from each of the unit of picture element cells, detection means for generating a detection signal based on an output voltage value corresponding to the picture image signal, and sensitivity adjustment means for generating a sensitivity adjustment signal to adjust sensitivity required based on the detection signal in each the unit of picture element cells.

Abstract: A solid state image sensor comprises a CCD type image sensing device and a signal detector. This signal detector comprises an FDA type signal detection circuit connected to a signal pick-up terminal of the image sensing device and having a small amount of saturating signals and low noise, an FDA type signal detection circuit connected to the signal pick-up terminal and having a large amount of saturating signals and high noise, and a signal composing circuit for composing the outputs of both signal detection circuits and outputting a composed output and changing a composing ratio in accordance with the output of the FDA type signal detection circuit.

Abstract: A solid state imaging device based on free carrier absorption includes a photodiode in which free charges are filled, a transfer electrode which outputs the free charges to a channel region, a transmission electrode by which the free charges stored in the channel region are read out and transferred to outside, and an injection electrode and source region for setting a state in which the photodiode is filled with the free charges as a result of providing the free charges therein. The free charges in a conduction band in accordance with incident light irradiated into the photodiode become in an active state by plasma absorption and then transferred to the channel region under control of the transfer electrode. In addition to the above mentioned composition, a solid state imaging device is made up of two channel region in relation to a picture element of the photodiode.

Abstract: A solid state image sensing device comprises a great number of light receiving elements arrayed in rows and columns, a plurality of vertical CCD registers respectively coupled to columns of the light receiving elements for vertically transferring signal charges sensed by the light receiving elements, a horizontal CCD register for horizontally transferring the signal charges transferred from the vertical CCD register, an adder section for adding together signal charges obtained from a predetermined number of light receiving elements arrayed in columns and rows to form one added signal charge and for obtaining a plurality of added signal charges for all the light receiving elements in each of fields, and a field switcher for introducing signal charges obtained from an array of light receiving elements with at least one element shifted from the previous field to the adder section in each field.