Abstract: An area image sensor outputs the difference between charges received by light-receiving cells arranged in an array pattern. A system controller generates a timing signal for generating a pulse or modulation signal. A control signal generator generates a control signal for separately controlling the light-receiving timings of the light-receiving cells of the area image sensor on the basis of the timing signal from the system controller. A light emitting controller controls a light source to generate light, the intensity of which changes on the basis of the timing signal from the system controller. A reflected light image processor extracts a reflected image of an object from the difference outputted from the area image sensor.

Abstract: A glow discharge lamp has a discharge vessel, a pair of electrodes mounted in the discharge vessel, ionizable filling which is principally made of rare gas and filled in the discharge vessel, and emissive material containing zinc alloy and provided on at least one of the electrodes.

Abstract: An electrical apparatus comprises a circuit board, providing an electrolytic condenser and electrical components, and a housing. The housing accommodates the circuit board. The electrical components include resin containing one or more halogen compounds of about 1% by weight or less in terms of bromine (Br).

Abstract: A compact selfballasted fluorescent lamp includes a fluorescent arc tube forming a crooked discharge path, a housing comprised of a first end portion open to be fit thereon with a bulb-base, a middle portion and a second end portion open to be mounted thereto with the fluorescent arc tube, a lighting circuit module accommodated in the housing, the unit being provided with a circuit board and two or more circuit components mounted on the circuit board for constituting a lighting circuit for lighting the fluorescent arc tube, and a thermal conductor having a thermal conductivity of 0.1 W/(m·K) or more, which is filled in the housing, extending upwards from a components mounting side of the circuit board of the lighting circuit module and contacting with the inner wall of the housing lying on the side of the first end portion of the housing, thereby covering at least one of the circuit components of the lighting circuit.

Abstract: A circular fluorescent lamp comprises a light-transmitting circular tube, filled with a discharge gas including mercury and a rare gas, having an outer diameter between about 14 mm and 18 mm. A phosphor layer is coated on the inner surface of the light-transmitting circular tube. A stem seals each end of the light-transmitting circular tube air-tightly, and holds a pair of conductive wires. One of the ends of each pair are connected to a filament, and the other of the ends extend outwardly from the circular tube. A lamp base is arranged between the ends of the light-transmitting circular tube so as to rotate slightly around the center axis of the circular tube and includes conductive pins, which are connected to the conductive wires. An insulator, arranged between at least one pair of the conductive wires, limits the movement of the conductive wires. The circular fluorescent lamp may be used for a lighting fixture.

Abstract: A solid-state imaging device with a variable (continuous) electronic shutter function comprises an imaging area where unit cells with photodiodes acting as pixels are arranged two-dimensionally, read lines for driving the read transistors in each pixel row, vertical selection lines for driving the vertical selection transistors in each pixel row, a vertical driving circuit for selectively driving vertical selection lines, vertical signal lines for outputting the signal from each unit cell in the pixel rows driven sequentially, and a row selection circuit for controlling the vertical driving circuit in such a manner that the vertical driving circuit drives the read transistors in each pixel row with the desired signal storage timing and signal read timing twice in that order and thereby drives the vertical selection transistors in the pixel row in synchronization with the signal read timing.

Abstract: A glow discharge lamp has a discharge vessel, a pair of electrodes mounted in the discharge vessel, ionizable filling which is principally made of rare gas and filled in the discharge vessel, and emissive material containing zinc alloy and provided on at least one of the electrodes.

Abstract: An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines.

Abstract: An electrical apparatus comprises a circuit board, providing an electrolytic condenser and electrical components, and a housing. The housing accommodates the circuit board. The electrical components include resin containing one or more halogen compounds of about 1% by weight or less in terms of bromine (Br).

Abstract: CCD type charge transfer sections include vertical charge transfer sections and horizontal charge transfer sections having stages twice the number of lines of the vertical charge transfer sections. The horizontal charge transfer sections have a capacity capable of holding charges twice the number of lines of the vertical charge transfer sections. A controller controls an area image sensor to arrange charges of an object image corresponding to an irradiated state and charges of the object image corresponding to a non-irradiated state in the vertical charge transfer sections, and to transfer charges for two pixels per vertical charge transfer section to the horizontal charge transfer sections to hold the charges.

Abstract: An image system uses an amplification-type MOS sensor for receiving an optical image through a photoelectric conversion element, converting the image into an electrical signal, and outputting the signal. This system includes an optical system for guiding this optical image to a predetermined position, an image processing means having a sensor for photoelectrically converting the optical image guided to the predetermined position by the optical system into an electrical signal in units of pixels, and a signal process device for processing an output from the image processing means, and outputting the resultant data.

Abstract: CCD type charge transfer sections include vertical charge transfer sections and horizontal charge transfer sections having stages twice the number of lines of the vertical charge transfer sections. The horizontal charge transfer sections have a capacity capable of holding charges twice the number of lines of the vertical charge transfer sections. A controller controls an area image sensor to arrange charges of an object image corresponding to an irradiated state and charges of the object image corresponding to a non-irradiated state in the vertical charge transfer sections, and to transfer charges for two pixels per vertical charge transfer section to the horizontal charge transfer sections to hold the charges.

Abstract: An MOS-type solid-state imaging apparatus includes unit cells arranged in a two-dimensional matrix, each unit cell being constituted by a photodiode, an amplification transistor having a gate to which an output from the photodiode is input, a vertical selection transistor connected in series with the amplification transistor, and a reset transistor connected between the drain and gate of the amplification transistor to discharge the signal from the photodiode, a plurality of vertical address lines connected to the gates of the vertical selection transistors and arranged in a row direction, a vertical address circuit for driving the vertical address lines, a plurality of vertical signal lines arranged in a column direction in which currents are read out from the amplification transistors, a plurality of load transistors each connected to one end of a corresponding one of the vertical signal lines, a plurality of horizontal selection transistors each connected to the other end of a corresponding one of the vert

Abstract: CCD type charge transfer sections include vertical charge transfer sections and horizontal charge transfer sections having stages twice the number of lines of the vertical charge transfer sections. The horizontal charge transfer sections have a capacity capable of holding charges twice the number of lines of the vertical charge transfer sections. A controller controls an area image sensor to arrange charges of an object image corresponding to an irradiated state and charges of the object image corresponding to a non-irradiated state in the vertical charge transfer sections, and to transfer charges for two pixels per vertical charge transfer section to the horizontal charge transfer sections to hold the charges.

Abstract: An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines.

Abstract: An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines.

Abstract: In an MOS-type solid-state imaging apparatus, plural unit cells are arranged in a two-dimensional matrix, unit cells in one horizontal line (row) are selected by a vertical address circuit, and vertical signal lines to which outputs from the unit cells in one vertical line (column) are supplied are selected by a horizontal address circuit, thereby sequentially outputting signals from the respective unit cells. Each unit cell includes an output circuit for outputting an output from a photodiode to a vertical signal line, photodiodes connected in parallel to the output circuit, and a selection switch for selecting one of the photodiodes and connecting it to the output circuit. The output circuit comprising an amplification transistor for amplifying an output from the photodiode, a selection transistor for selecting the unit cell, and a reset transistor for resetting the charge in the photodiode.

Abstract: An amplifying solid-state image pickup device comprises an image pickup region formed by two-dimensionally arranging photosensitive cells, each of the photosensitive cells including photoelectric conversion means, signal charge storage means, signal charge ejection means, row select means, and amplification means on a semiconductor substrate, a plurality of vertical select lines arranged in the image pickup region in a row direction, vertical select means for driving the plurality of vertical select lines, a plurality of vertical signal lines arranged in the column direction to read the outputs of the amplification means, noise suppression means provided at the ends of the plurality of vertical signal lines to capture and deduct noises and signals appearing on the plurality of vertical signal lines at time differences, horizontal select lines arranged in a column direction, horizontal read means for relaying the outputs of the horizontal select lines and the noise suppression means, horizontal select means fo

Abstract: A driving method for a solid state imaging device with a horizontal blanking period for each scanning line and a vertical blanking period for each field and including a plurality of cell sections formed in a matrix form on a semiconductor substrate, the plurality of cell sections including a plurality of signal charge storage sections for storing signal charges, a plurality of readout sections for reading out the signal charges from the signal charge storing sections, a plurality of signal charge transferring sections for transferring the readout signal charges, and a plurality of pixel electrodes electrically connected to the plurality of signal charge storage sections, a photoelectric converting layer including at least one photoelectric converting film stacked on the plurality of pixel electrodes, the photoelectric converting film being electrically connected to the electrodes and having a pn junction, and at least one transparent electrode formed on the photoelectric converting film.

Abstract: A solid-state camera device of the present invention includes a semiconductor substrate, a plurality of charge storage regions formed on the semiconductor substrate, a charge transfer region formed on the semiconductor substrate, for transferring charges read from the plurality of charge storage regions, a bias charge injection diode formed on the semiconductor substrate, for injecting a bias charge into the charge storage region, and sweeping out section for sweeping at least part of the charge remaining in the charge transfer region before resetting part of the bias charge injected into the charge storage region to emit part of the bias charge into the charge transfer region. That is, the present invention has a feature that the residual charge lying in the charge transfer region below the transfer gate specified for reading is swept before resetting the bias charge after injecting the bias charge into the charge storage region.