Abstract: A test device 1 for analyzing a specific component in a test solution with a reagent by allowing the solution introduced via a feed opening 4 to react with the reagent maintained in a predetermined position in a capillary tube 3 having the opening 4 and an air outlet 5. The tube is provided with two hydrophilic regions 31, 33 and a hydrophobic region 32. The region 31 transfers the solution from the opening 4 to the reagent. The region 33 is delimited to a predetermined area maintaining the reagent. The region 32 separates the region 31 from the region 33. The reagent and the solution are applied in predetermined amounts to the region 33. A measuring device need not previously measure the solution. The device is useful as an analytical device for rapid and easy analysis, and can be produced in a less number of steps because the reagent can be fixed by merely applying it onto a predetermined position.

Abstract: A chip-type surge absorber and method for producing same, wherein the chip-type surge absorber includes an insulating substrate in the shape of a rectangular parallelepiped; an insulating hermetic cap open at a bottom side thereof, for forming, together with the insulating substrate, a box-shaped hermetically sealed cavity filled with a discharge gas; terminal electrodes disposed at both ends in the hermetically sealed cavity; a pair of discharge electrodes which are formed in the hermetically sealed cavity such that a discharge gap is formed between the discharge electrodes and such that the discharge electrodes are electrically connected to corresponding terminal electrodes; and connection surfaces for increasing the connection area for the connection between the discharge electrodes and the terminal electrodes.

Abstract: In a holding and heat dissipation structure for a heat generation part for dissipating heat generated from the heat generation part having lead portions protruded from the main body thereof are soldered at a main substrate, a terminal plate is disposed at a position opposing to the main substrate with a predetermined distance therebetween, and a part housing portion for holding the part is provided at the terminal plate. The part housing portion is concavely formed. Insertion holes for inserting the lead portions protruded from the main body are formed at the part housing portion and the main substrate, respectively. The lead portions are inserted into these insertion holes, and the lead portions and the land portions of the main substrate are fixed to each other by the soldering in a state that the main body is separated from the bottom surface of the part housing portion.

Abstract: A NAND-cell type EEPROM includes an array of memory cells connected to bit lines. Each cell includes one transistor with a floating gate and a control gate electrode, wherein electrons are tunneled to or from the floating gate to write a data thereinto. A sense/latch circuit is connected to the bit lines, and selectively performs a sense operation and a latch operation of the write data. A program controller is provided for writing the data into a selected memory cell in a designated area, and for reading the data written in the selected cell to verify whether or not its resultant threshold voltage falls within an allowable range. If it is insufficient, the data is rewritten thereinto.

Abstract: A flat cable for electrically connecting a fixed body and a rotating body which can be freely rotated coaxially to this fixed body is disclosed. The flat cable includes a first insulating film on which a first set of separate plated conductor strips is disposed, and a second insulating film on which a second set of separate plated conductor strips is disposed. The first and second sets of separate plated conductor strips are sandwiched between the first and second insulating films to form multiple layers. The first set of separate plated conductor strips on the first insulating film and the second set of separate plated conductor strips on the second insulating film are layered to be electrically separated from each other.

Abstract: A NAND-cell type EEPROM includes an array of memory cells connected to bit lines. Each cell includes one transistor with a floating gate and a control gate electrode, wherein electrons are tunneled to or from the floating gate to write a data thereinto. A sense/latch circuit is connected to the bit lines, and selectively performs a sense operation and a latch operation of the write data. A program controller is provided for writing the data into a selected memory cell in a designated area, and for reading the data written in the selected cell to verify whether or not its resultant threshold voltage falls within an allowable range. If it is insufficient, the data is rewritten thereinto.

Abstract: In a substrate-stacking structure, a substrate, having heat-generating parts mounted thereon, and a control substrate, having control parts mounted thereon, are held spaced a predetermined distance from each other. The substrate and the control substrate are held spaced the predetermined distance from each other through a holding plate, and a heat shielding plate is interposed between these substrates, and an air layer is formed between the heat shielding plate and the control substrate.

Abstract: A cathode for a cathode-ray tube which has high current density and long life and which can be mass-produced without dispersion of a cathode pellet temperature. The cathode comprises a cathode pellet formed from a sintered body which is obtained by sintering a mixture containing at least a nickel powder and a powder of electron emission agent by hot isostatic pressing. The cathode also comprises a cathode pellet support member on which the cathode pellet is attached. According to the present invention, the cathode pellet support member is a bottom plate which covers only a bottom surface of the cathode pellet. The cathode pellet may have a column shape, and the bottom plate may have a disk shape or a reversed cup shape.

Abstract: A method for producing a semiconductor device including formation of an interlayer insulating film having a fluorine-doped silicon oxide layer on a substrate. The method comprising the steps of forming the fluorine-doped silicon oxide layer in a process chamber, and forming a silicon oxide layer on the fluorine-doped silicon oxide layer in the same process chamber subsequent to the formation of the fluorine-doped silicon oxide layer. The silicon oxide layer is formed at a temperature higher than a film forming temperature of the fluorine-doped silicon oxide layer thereby forming the interlayer insulating film comprising the fluorine-doped silicon oxide layer and the silicon oxide layer formed thereon on the substrate.

Abstract: In a structure for holding a terminal in which a soldering portion of the terminal is inserted into a connecting hole of a substrate, and a land portion on the substrate and the soldering portion of the terminal are held by soldering with the terminal set upright, a terminal plate for guiding the soldering portion of the terminal into the connecting hole of the substrate is disposed at a position opposing the substrate and spaced apart therefrom with a predetermined clearance, and a positioning hole for holding an intermediate portion of the terminal is provided in the terminal plate, while a retaining portion which is retained in the positioning hole of the terminal plate is provided in the intermediate portion of the terminal.

Abstract: In a memory system using a removable recording medium and data stored in the recording medium, identifying information for identifying each recording medium from others is held in the recording medium, and when data stored in the recording medium is used, the identifying information of the recording medium is required. As a result, when a flash memory card, etc. is used, a copyright is reliably protected.

Abstract: A pellicle includes a reticle, a pellicle frame, a pellicle film, and a capturing material. The pellicle frame has a reticle pattern surface formed with a reticle pattern. The pellicle frame has one end face bonded to the reticle pattern surface to surround the reticle pattern. The pellicle film is bonded to the other end face of the pellicle frame. The capturing material is formed on at least part of an inner surface of the pellicle frame to capture a deposition control material which is present in a gas in a space in the pellicle to control formation of a deposit on the reticle pattern surface. The space in the pellicle is defined by the reticle pattern surface, the pellicle frame, and the pellicle film. A pellicle case for accommodating the pellicle is also disclosed.

Abstract: An apparatus for preventing the raveling of a seam wherein a looper thread hanging hook for catching a looper thread which is allowed to pass through a loop of a needle thread immediately before the completion of a sewing operation and a driving mechanism of the hook together with a mechanism for cutting the looper thread and the needle thread are arranged on the right side of a needle drop point of a sewing machine.

Abstract: The present inventors successfully cloned the rice Na+/H+ antiporter gene. It is possible to produce salt tolerant plants by using the isolated gene or genes with equivalent functions.

Abstract: The invention provides a sewing machine which comprises needle 1 that moves up and down while sticking into a cloth W on a needle plate and a looper 2 that projects and withdraws under the needle plate so that the looper 2 projects to catch a needle thread 10 left under the needle plate in accordance with the rise of the needle 1 and draw out the thread in accordance with the feeding of the cloth W, and on the other hand, the needle 1 falls to catch the looper thread left under the needle plate upon the withdrawal of the looper 2, whereby multi-thread chain stitches or covering stitches are formed, wherein a retainer rod 30 is provided which projects and withdraws backward and forward within a plane roughly in parallel with the feed surface of the cloth W while interlocked with the rise and fall of the needle 1, and this retainer rod 30 catches the looper thread 20 at the projection side of the looper 2 ahead of the needle 1 when projecting rearward, and holds the caught looper thread 20 between the rod and n

Abstract: A process for producing an aldehyde, which comprises a reaction step of producing an aldehyde by reacting an olefinic compound with carbon monoxide and hydrogen in the presence of a rhodium complex catalyst comprising at least rhodium and an organic phosphite in a reaction zone, a separation step of obtaining a catalyst solution containing the rhodium complex catalyst by separating the aldehyde from a reaction solution taken from the reaction zone, and a recycling step of recycling the catalyst solution into the reaction zone, wherein the aldehyde is separated from the reaction solution in such a manner as to make an aldehyde concentration from 0.5 to 99 wt % in the catalyst solution.

Abstract: Amounts of components in a specimen can be analyzed with excellent quantitativity. The analysis includes: measuring an amount of a component to be analyzed in a specimen; measuring an amount of a standard component present originally and homeostatically in the specimen other than the component to be analyzed; determining the amount of the specimen from the amount of the standard component thus measured and a known concentration of the standard component in the specimen; and determining a concentration of the component to be analyzed in the specimen from the amount of the specimen thus determined and the amount of the component to be analyzed thus measured. The quantitative analysis of the present invention allows a component to be analyzed to be measured with high quantitativity as shown in FIG. 1.

Abstract: A NAND-cell type EEPROM includes an array of memory cells connected to bit lines. Each cell includes one transistor with a floating gate and a control gate electrode, wherein electrons are tunneled to or from the floating gate to write a data thereinto. A sense/latch circuit is connected to the bit lines, and selectively performs a sense operation and a latch operation of the write data. A program controller is provided for writing the data into a selected memory cell in a designated area, and for reading the data written in the selected cell to verify whether or not its resultant threshold voltage falls within an allowable range. If it is insufficient, the data is rewritten thereinto.

Abstract: The invention provides a sewing machine which comprises needle 1 that moves up and down while sticking into a cloth W on a needle plate and a looper 2 that projects and withdraws under the needle plate so that the looper 2 projects to catch a needle thread 10 left under the needle plate in accordance with the rise of the needle 1 and draw out the thread in accordance with the feeding of the cloth W, and on the other hand, the needle 1 falls to catch the looper thread left under the needle plate upon the withdrawal of the looper 2, whereby multi-thread chain stitches or covering stitches are formed, wherein a retainer rod 30 is provided which projects and withdraws backward and forward within a plane roughly in parallel with the feed surface of the cloth W while interlocked with the rise and fall of the needle 1, and this retainer rod 30 catches the looper thread 20 at the projection side of the looper 2 ahead of the needle 1 when projecting rearward, and holds the caught looper thread 20 between the rod and n

Abstract: A process for producing an aldehyde, which comprises a reaction step of producing an aldehyde by reacting an olefinic compound with carbon monoxide and hydrogen in the presence of a rhodium complex catalyst comprising at least rhodium and an organic phosphite in a reaction zone, a separation step of obtaining a catalyst solution containing the rhodium complex catalyst by separating the aldehyde from a reaction solution taken from the reaction zone, and a recycling step of recycling the catalyst solution into the reaction zone, wherein the aldehyde is separated from the reaction solution in such a manner as to make an aldehyde concentration from 0.5 to 99 wt % in the catalyst solution.