Abstract: A NAND-cell type EEPROM includes an array of memory cells connected to bit lines. Each cell includes one transistor with a floating gate and a control gate electrode, wherein electrons are tunneled to or from the floating gate to write a data thereinto. A sense/latch circuit is connected to the bit lines, and selectively performs a sense operation and a latch operation of the write data. A program controller is provided for writing the data into a selected memory cell in a designated area, and for reading the data written in the selected cell to verify whether or not its resultant threshold voltage falls within an allowable range. If it is insufficient, the data is rewritten thereinto.

Abstract: A NOR operation is performed on the address bit by bit by a NOR circuit, and when the final address in a page is detected from the result of the NOR operation by a final address detection circuit, a program starting circuit executes data writing to a memory cell. This can ensure detection of the final address in a page without using a counter circuit. It is therefore possible to simplify the structure of the final address detection circuit and reduce the circuit area occupying in a semiconductor memory device.

Abstract: An EEPROM includes an array of memory cell transistors, which is divided into cell blocks each including NAND cell units of series-connected cell transistors. A sense amplifier is connected to bit lines and a comparator. A data-latch circuit is connected to the comparator, for latching a write-data supplied from a data input buffer. After desired cell transistors selected for programming in a selected block are once programmed, a write-verify operation is performed. The comparator compares the actual data read from one of the programmed cell transistors with the write-data, to verify its written state. The write-verify process checks the resulting threshold voltage for variations using first and second reference voltages defining the lower-limit and upper-limit of an allowable variation range.

Abstract: A tape loading mechanism used in a recording and reproducing apparatus for extracting a tape from a cassette and for winding it on a tape guide drum on which a rotating head for recording information on or reproducing information from the tape is mounted. A guide base, on which a group of guides for extracting the tape from the cassette are mounted, is rotatably supported by a shaft on a drive member that drives the guide base. An attitude control member is installed along the path of travel of the guide base to engage with the sides of the guide base to control the rotating angle of the latter.

Abstract: A magnetic recording/reproducing apparatus comprises a main chassis on which a cylinder having a rotary magnetic head attached thereto is mounted, a subchassis which is supported on the main chassis so as to be movable toward and away from the cylinder and on which reel mounts are mounted for engagement with reels of a magnetic tape cassette, a driving motor, tape guide members serving to form a predetermined path through which a magnetic tape moves so as to be wound around the cylinder, a pinch roller which cooperates with a capstan to hold the magnetic tape therebetween so as to move the magnetic tape in a predetermined direction, brakes for applying predetermined rotational loads to the reel mounts, operation members for operating the pinch roller and/or brakes, cam members for imparting a predetermined displacement to the operation members, and transmission members for transmitting the driving force from the driving motor to the cam members, wherein at least the driving motor, the brake members, as well a

Abstract: A NAND-cell type electrically erasable and programmable read only memory includes an array of rows and columns of memory cells associated with parallel bit lines on a semiconductive substrate. Each memory cell essentially consists of a floating-gate field effect transistor having a floating gate and an insulated control gate. The memory cell array is divided into a plurality of cell blocks, each of which includes NAND cell sections each including a predetermined number of a series-connected memory cell transistors. A redundancy cell section is provided which includes an array of redundancy memory cells containing at least one spare cell block. A row redundancy circuit is connected to a row decoder, and is responsive to an address buffer. The redundancy circuit replaces a defective block containing a defective memory cell or cells with the spare cell block.

Abstract: The present invention provides a semiconductor memory device capable of reducing its current consumption, controlling the generation of noise, and increasing in access using a precharge voltage applied to a precharge circuit. In the semiconductor memory device, a precharge circuit is connected to a pair of data input/output lines, and includes a MOS transistor connected between one of the data input/output lines and a node of a precharge voltage and a MOS transistor connected between the other data input/output line and a node of the precharge voltage. The gates of the MOS transistors are supplied with control signals so that the MOS transistors are turned on when the data input/output lines are precharged. A MOS transistor is connected to the data input/output lines for equalizing them. The precharge voltage is set to half of a value obtained by subtracting the threshold voltage of the MOS transistor from the power supply voltage.

Abstract: A NAND cell type electrically erasable programmable read-only memory has NAND cell units. Each NAND cell unit has a series array of floating gate type metaloxide semiconductor field effect transistors as memory cell transistors. The first-stage memory cell transistor is connected at its gate to a corresponding bit line via a first select transistor The last-stage memory cell transistor is connected at its source to a common source line by means of a second select transistor. The common source line is connected with a test circuit to be used for measuring the distribution of threshold values of the memory cell transistors in the erasing state. The test circuit temporarily applies the common source line with a positive bias voltage of a predetermined potential level so that the potential of the control gate of a selected memory cell transistor is set at to 0 volt. As a result, the threshold value of the EEPROM in the erasing state can be measured without using any negative potential.

Abstract: A microgap type surge absorber comprises a columnar insulator element being covered with a conductive material and provided with a microgap around the center thereof, a pair of conductive caps being fixed on the both ends of the element, first and second electrodes being attached to the both caps, first and second glass tubes adhering to the periphery of the first and second electrodes and surrounding the end parts of the element, and a cylindrical third electrode being held between the both glass tubes and adjacently surrounding the element containing the microgap. The first, second, and third electrodes and glass tubes are charged with inert gas. When a glow discharge started from near the microgap extends to the conductive coating and arrives at the caps, an arc discharge is formed between caps through the third electrode. The third electrode protects the microgap from arc discharge current.

Abstract: A tape loading mechanism used in a recording and reproducing apparatus for extracting a tape from a cassette and for winding it on a tape guide drum on which a rotating head for recording information on or reproducing information from the tape is mounted. A guide base, on which a group of guides for extracting the tape from the cassette are mounted, is rotatably supported by a shaft on a drive member that drives the guide base. An attitude control member is installed along the path of travel of the guide base to engage with the sides of the guide base to control the rotating angle of the latter.

Abstract: An arc cam member has a guide groove formed on its underside along its arced length. On its outer circumference, the cam member is provided with a first cam portion. A second cam portion is formed in the wall of the guide groove of the cam member. The ends of a first arm and a second arm are placed in contact with the first and second cam portions respectively. As the cam member is rotated, the first and second arms move, following the shapes of the first and second cam portions. The motion of the first and second arms is used to operate the recording and reproducing apparatus.

Abstract: A method of and apparatus for controlling a fuel injection quantity for an internal combustion engine wherein the fuel injection quantity is controlled on the basis of both an intake-pipe pressure and a rotational speed of the engine. The output of a pressure sensor for detecting the intake-pipe pressure is processed by a CR filter having a time constant which enables removal of a pulsating component of the intake-pipe pressure. The output of the CR filter is relaxed to calculate a first weighted mean value with a relatively low degree of relaxation and a second weighted mean value with a relatively high degree of relaxation. The second weighted mean value is subtracted from the first weighted mean value, and an incremental/decremental quantity is determined on the basis of the result of the subtraction.

Abstract: A lock cylinder attaching device is of the type for use in a vehicle movable closure lock and comprises a support for attaching an inner end of a lock cylinder to a vehicle body member in addition to means for attaching the outer end of the lock cylinder to the vehicle body member.

Abstract: A carburetor float chamber venting system includes an intake system float chamber venting passage which leads from an upper part of the carburetor float chamber to the intake system, a fuel vapor absorption device float chamber venting passage which leads from an intermediate part of the intake system float chamber venting passage to a fuel vapor absorption device, and a control valve, provided at a part of the fuel vapor absorption device float chamber venting passage, whose operation controls the opening and closing of the fuel vapor absorption device float chamber venting passage.

Abstract: Nitrous oxide having a high purity is produced by reacting urea, nitric acid and sulfuric acid at a temperature of 40.degree. through 100.degree. C., and isolating the resultant nitrous oxide from the reaction gas mixture, without any danger of, for example, explosion during the reaction and without using expensive catalysts and sulfamic acid.

Abstract: A universal joint is composed of first and second yokes each having two through holes, a hollow rectangular parallelepiped support member positioned to cooperate with the first and second yokes, the support member having five rectangular plate sections leaving a rectangular opening, and formed with four through holes, the adjacent rectangular plate sections being completely integral with each other at connecting edges thereof, and pins insertable into the through holes of the yokes and of the support member so as to connect the yokes with the support member, thereby producing a universal joint light in weight and high in torsional strength.

Abstract: A pedal coupling pin for rotatably coupling a coupling member to a pedal including a cylindrical portion, a flange whose diameter is greater than the diameter of a coupling pin insertion holes formed in the coupling part, said flange being provided on one end of the cylindrical portion and an elastic retaining member provided on another end of the cylindrical portion. The elastic retaining member includes at least one pair of arms which extend outwardly toward the flange end and whose free ends extend outwardly a distance greater than the diameter of the coupling pin insertion holes.

Abstract: In a grid structure for a color picture tube of the type comprised of a pair of elongated frame elements disposed in substantially parallel, spaced apart relation at the top and bottom, respectively, of the grid structure, a pair of mechanically resilient brace members having mid-portions extending between the frame elements at the opposite sides of the grid structure and end portions affixed to the frame elements for maintaining the latter in their spaced apart relation, and a plurality of grid wires defining slits therebetween extending between the frame elements and being welded or otherwise affixed to the latter adjacent the opposite ends of the grid wires while the grid wires are longitudinally tensioned and the brace members are prestressed by forces acting on the frame elements in the directions to urge the frame elements toward each other; each brace member has a cross-sectional shape, such as, a rectangular shape, providing different section moduli in respect to correspondingly different axes passing

Abstract: A column shift type transmission control device used in a tilt steering system. A tilt joint for coupling the upper control rod and the lower control rod of the transmission control device is provided in cabin side and the lower control rod is supported by the mount bracket so as to make an opening in the mount bracket smaller to contribute for noise separation and for easy assembling.

Abstract: A process for removing nitrogen oxides (NO.sub.x) from a waste gas containing 300 through 20,000 ppm of NO.sub.x is disclosed. In the process, the waste gas containing NO.sub.x is adjusted to a molar ratio of NO/NO.sub.2 of approximately 1 and is then scrubbed with a scrubbing solution containing an alkali metal hydroxide in a first column. The scrubbing solution is removed from the first column before the alkali metal hydroxide is completely consumed. The removed scrubbing solution is then contacted in a second column with a gas having 1.0 through 60.0% by volume NO.sub.x which has been adjusted to a molar ratio of NO/NO.sub.2 of approximately 1. Thus, the NO.sub.x content of the purified gas can be lowered to far less than 200 ppm and post-treatment problems of the scrubbed solution can be effectively solved.