Abstract: A monoclonal antibody or an antigen-binding fragment thereof according to an embodiment of the present invention can bind to lymphocyte-activation gene 3 (LAG-3) including a heavy chain variable region and a light chain variable region and inhibit the activity thereof. Thus it is expected to be useful for the development of immunotherapeutic agents for various disorders that are associated with LAG-3.

Abstract: The present invention relates to an antibody against delta-like 1 homolog (Drosophila) (DLK1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector comprising the nucleic acid, a cell transformed with the vector, a method for producing the antibody or an antigen-binding fragment thereof, an antibody drug conjugate (ADC) comprising the same, a pharmaceutical composition for treating cancer, a composition for diagnosing cancer, and a chimeric antigen receptor (CAR) and a T-cell engager comprising the same.

Abstract: A method and apparatus configured for updating vehicle software using over-the-air (OTA) may include extracting first format difference data and second format difference data, corresponding to a first format and a second format of an update target software image, respectively, comparing the first format difference data and the second format difference data, determining a format of difference data as a transmission target, based on the comparison result, and transmitting the determined format of difference data to an update target vehicle terminal through a wireless network. Accordingly, it is advantageous to minimize the amount of transmitted data while vehicle software is updated using OTA.

Abstract: A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.

Abstract: A display device includes: a display unit including a flat part and a curved part which is formed to be bent from sides of the flat part; a sensing unit on the display unit to overlap with the flat part and the curved part; and a passivation layer on the sensing unit, wherein the passivation layer overlaps with the flat part and the passivation layer does not overlap the curved part.

Abstract: A display device including: a substrate; an active layer, and including channel and conductive regions; a first conductive layer including a driving gate electrode and a scan line in a first direction; a second conductive layer including a storage line; a third conductive layer including a first connecting member above the storage line; an insulating layer between the storage line and the first connecting member; and a data line and a driving voltage line crossing the scan line in a second direction, wherein the first connecting member electrically connects the driving gate electrode and a conductive region, the driving voltage line overlaps the first connecting member, the insulating layer includes first and second sub-insulating layers, and an edge of the second sub-insulating layer substantially overlaps an edge of the first connecting member in a thickness direction of the display device.

Abstract: A method of fabricating a semiconductor package includes mounting at least one semiconductor chip to a package substrate, forming a shielding wall around the at least one semiconductor chip, forming a molded body on the package substrate in a space surrounded by the shielding wall, and forming a shielding cover covering the molding unit and in contact with the shielding wall.

Abstract: A display device includes a substrate, a semiconductor layer on the substrate, a first insulating layer on the semiconductor layer, a first conductive layer on the semiconductor layer, a second insulating layer on the first conductive layer, a first contact hole penetrating the first insulating layer and the second insulating layer, a second conductive layer on the second insulating layer, connected to the semiconductor layer through the first contact hole, and including a hydrogen barrier material, and a third insulating layer on the second conductive layer.

Abstract: A method of fabricating a semiconductor package includes mounting at least one semiconductor chip to a package substrate, forming a shielding wall around the at least one semiconductor chip, forming a molded body on the package substrate in a space surrounded by the shielding wall, and forming a shielding cover covering the molding unit and in contact with the shielding wall.

Abstract: Disclosed are an antibody to human programmed cell death-ligand 1 (PD-L1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector including the nucleic acid, a cell transformed with the vector, a method for producing the antibody or an antigen-binding fragment thereof, and a composition for preventing or treating cancer or infectious diseases containing the same.

Abstract: A display device including: a substrate; an active layer, and including channel and conductive regions and; a first conductive layer including a driving gate electrode and a scan line in a first direction; a second conductive layer including a storage line; a third conductive layer including a first connecting member above the storage line; an insulating layer between the storage line and the first connecting member; and a data line and a driving voltage line crossing the scan line in a second direction, wherein the first connecting member electrically connects the driving gate electrode and a conductive region, the driving voltage line overlaps the first connecting member, the insulating layer includes first and second sub-insulating layers, and an edge of the second sub-insulating layer substantially overlaps an edge of the first connecting member in a thickness direction of the display device.

Abstract: A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.

Abstract: A display device including a first substrate including a display area that displays an image and a peripheral area, in which no image is displayed, surrounding the display area. The display device further includes a plurality of pixels disposed in the display area. The display device additionally includes a first metal layer disposed above the first substrate in the peripheral area, and the first metal layer including a plurality of openings. The display device further includes a sealant disposed above the first metal layer, and surrounding the plurality of pixels. The display device additionally includes a plurality of second metal layers disposed above the first substrate and below the first metal layer in the peripheral area, and respectively overlapping the openings of the first metal layer. A part of the sealant is disposed in the plurality of openings.

Abstract: A display device including: a substrate; an active layer, and including channel and conductive regions and; a first conductive layer including a driving gate electrode and a scan line in a first direction; a second conductive layer including a storage line; a third conductive layer including a first connecting member above the storage line; an insulating layer between the storage line and the first connecting member; and a data line and a driving voltage line crossing the scan line in a second direction, wherein the first connecting member electrically connects the driving gate electrode and a conductive region, the driving voltage line overlaps the first connecting member, the insulating layer includes first and second sub-insulating layers, and an edge of the second sub-insulating layer substantially overlaps an edge of the first connecting member in a thickness direction of the display device.

Abstract: A display device includes a substrate including a display area, a non-display area, a first additional area connected to the non-display area at a first boundary, and a second additional area connected to the first additional area at a second boundary, pixels on the display area, an encapsulation film on the pixels, electrodes on the encapsulation film, pads on the second additional area, sensing wires connecting the electrodes and the pads, a first sensing insulating film on the encapsulation film, and a second sensing insulating film on the first sensing insulating film. The substrate includes a curved first side in the first additional area and the first additional area decreases in width from the first boundary to the second boundary, and a boundary of the first sensing insulating film is closer to the first side than a boundary of the second sensing insulating film is to the first side.

Abstract: The present disclosure is broadly concerned with the field of cancer immunotherapy. For example, the present disclosure generally related to a binding molecule comprising antibody variable light (VL) regions, variable heavy (VH) regions, constant heavy 1 (CH1) regions, and light chain constant (CL) regions that are configured to form two antigen binding Fab regions and an antigen binding Fv region so that the binding molecule binds to two different antigens.

Abstract: Provided are an anisotropic conductive film, a display device including the same and/or a semiconductor device including the same, the film comprising a conductive layer, wherein the conductive layer is formed of a conductive layer composition containing conductive particles, the conductive particles have a saturation magnetization value and specific gravity satisfying following formulae (1) and (2): (1) about 10 emu/g?saturation magnetization value?about 20 emu/g; and (2) about 2.8?specific gravity?about 3.2.

Abstract: A display device includes a substrate including a display area and a non-display area. First, second, and third insulating layers are sequentially disposed on the substrate. Pixels are disposed in the display area. Each of the pixels including a transistor and a light emitting element connected to the transistor. A data line is disposed in the display area. The data line is configured to supply a data signal to each of the plurality of pixels. A wiring portion is disposed in the non-display area. The wiring portion includes a connecting line connected to the data line and a fan-out line connected to the connecting line. A dummy pattern is disposed in the non-display area. The dummy pattern at least partially overlaps the wiring portion.

Abstract: Provided is a navigation system, which is effectively used depending on driver characteristics and driving conditions, wherein display performance of DUCs including a cluster, front/rear AVNs, and operation systems thereof are controlled through a single controller.

Abstract: A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.