Patents by Inventor Yu-Hsien Lin
Yu-Hsien Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240072170Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.Type: ApplicationFiled: August 24, 2022Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Wei Yin, Tzu-Wen Pan, Yu-Hsien Lin, Yu-Shih Wang, Yih-Ann Lin, Chia Ming Liang, Ryan Chia-Jen CHEN
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Patent number: 11916314Abstract: A mobile device includes a housing, a first radiation element, a second radiation element, a third radiation element, a first switch element, and a second switch element. The first radiation element has a first feeding point. The second radiation element has a second feeding point. The first radiation element, the second radiation element, and the third radiation element are distributed over the housing. The first switch element is closed or open, so as to selectively couple the first radiation element to the third radiation element. The second switch element is closed or open, so as to selectively couple the second radiation element to the third radiation element. An antenna structure is formed by the first radiation element, the second radiation element, and the third radiation element.Type: GrantFiled: May 12, 2022Date of Patent: February 27, 2024Assignee: HTC CorporationInventors: Cheng-Hung Lin, Szu-Po Wang, Chia-Te Chien, Chun-Chieh Wang, Kang-Ling Li, Chun-Hsien Lee, Yu-Chieh Chiu
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Patent number: 11894370Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.Type: GrantFiled: August 9, 2022Date of Patent: February 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ryan Chia-Jen Chen, Cheng-Chung Chang, Shao-Hua Hsu, Yu-Hsien Lin, Ming-Ching Chang, Li-Wei Yin, Tzu-Wen Pan, Yi-Chun Chen
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Publication number: 20230213457Abstract: An automated optical double-sided inspection apparatus includes a first image-capturing portion, a second image-capturing portion, a platform, a first light-blocking portion, a second light-blocking portion, and a processing portion. The platform carries an external object. When the processing portion operates in a first capturing mode, the second light-blocking portion blocks visible light from passing therethrough, while the first light-blocking portion allows visible light to pass therethrough, so that the first image-capturing portion shoots a first side of the external object through the first light-blocking portion to obtain a first image.Type: ApplicationFiled: December 21, 2022Publication date: July 6, 2023Inventors: Yee Siang GAN, Sze-Teng LIONG, Shih-Kai FAN, Che-Ming LI, Yu-Hsien LIN
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Publication number: 20230062257Abstract: A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region. The method also includes applying processing gas to the coating layer to remove an upper portion of the coating layer such that a height of the coating layer in the first region is a same as a height of the coating layer in the second region.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Hsuan Chen, Ming-Chia Tai, Yu-Hsien Lin, Shun-Hui Yang, Ryan Chia-Jen Chen
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Publication number: 20230048859Abstract: A connecting device of a liquid cooling module is provided, including a floating connector, a case, and an elastic sheet. The floating connector has a channel configured to let a liquid pass through it. The elastic sheet includes a first extending structure, a second extending structure, and a curved structure. The first extending structure is affixed to the case. The second extending structure is connected to the floating connector. The head end and the tail end of the curved structure are respectively connected to the first extending structure and the second extending structure.Type: ApplicationFiled: August 10, 2022Publication date: February 16, 2023Inventor: Yu-Hsien LIN
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Publication number: 20230027789Abstract: Improved gate structures, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a gate structure over a semiconductor substrate, the gate structure including a high-k dielectric layer; a gate electrode over the high-k dielectric layer; a conductive cap over and in contact with the high-k dielectric layer and the gate electrode, a top surface of the conductive cap being convex; and first gate spacers on opposite sides of the gate structure, the high-k dielectric layer and the conductive cap extending between opposite sidewalls of the first gate spacers.Type: ApplicationFiled: April 27, 2022Publication date: January 26, 2023Inventors: Li-Wei Yin, Yun-Chen Wu, Tzu-Wen Pan, Jih-Sheng Yang, Yu-Hsien Lin, Ryan Chia-Jen Chen
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Publication number: 20220384202Abstract: A method includes forming a fin structure over a substrate; forming a gate structure over the substrate and crossing the fin structure, wherein the gate structures comprises a gate electrode and a hard mask layer over the gate electrode; forming gate spacers on opposite sidewalls of the gate structure; performing an ion implantation process to form doped regions in the hard mask layers of the gate structure and in the gate spacers, wherein the ion implantation process is performed at a tilt angle; etching portions of the fin structure exposed by the gate structure and the gate spacers to form recesses in the fin structure; and forming source/drain epitaxial structures in the recesses.Type: ApplicationFiled: August 10, 2022Publication date: December 1, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Hsien LIN, Chang-Ching YEH
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Publication number: 20220384269Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.Type: ApplicationFiled: August 9, 2022Publication date: December 1, 2022Inventors: Ryan Chia-Jen Chen, Cheng-Chung Chang, Shao-Hua Hsu, Yu-Hsien Lin, Ming-Ching Chang, Li-Wei Yin, Tzu-Wen Pan, Yi-Chun Chen
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Patent number: 11502076Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.Type: GrantFiled: November 30, 2018Date of Patent: November 15, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ryan Chia-Jen Chen, Cheng-Chung Chang, Shao-Hua Hsu, Yu-Hsien Lin, Ming-Ching Chang, Li-Wei Yin, Tzu-Wen Pan, Yi-Chun Chen
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Patent number: 11473486Abstract: A fluid connector assembly includes a housing, an elastic member and a floating component. The housing has an opening. The elastic member is disposed in the opening of the housing. The floating component is movably supported by the elastic member and includes a fluid passage and a first guiding structure. The fluid passage is configured to be connected to a fluid device. The first guiding structure is configured to engage with a second guiding structure of the fluid device.Type: GrantFiled: May 3, 2021Date of Patent: October 18, 2022Assignee: DELTA ELECTRONICS, INC.Inventors: Yu-Jei Huang, Yu-Hsien Lin
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Patent number: 11456182Abstract: A method includes forming a fin structure extending above a substrate; forming dummy gate structures extending across the fin structure, each of the dummy gate structures including a dummy gate electrode layer and a hard mask layer over the dummy gate electrode layer; performing an ion implantation process to dope the hard mask layers of the dummy gate structures; after performing the ion implantation process to dope the hard mask layers of the dummy gate structures, performing a first etching process to etch a source/drain region of the fin structure between the dummy gate structures to form a recess in the source/drain region of the fin structure; forming an epitaxial structure in the recess; and replacing the dummy gate structures with metal gate structures.Type: GrantFiled: April 22, 2021Date of Patent: September 27, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Hsien Lin, Chang-Ching Yeh
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Patent number: 11387105Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.Type: GrantFiled: August 24, 2020Date of Patent: July 12, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jin-Dah Chen, Ming-Feng Shieh, Han-Wei Wu, Yu-Hsien Lin, Po-Chun Liu, Stan Chen
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Publication number: 20220208698Abstract: A semiconductor device includes: a chip unit, a conductive wire unit, and a cover unit. The chip unit includes a substrate formed with an interconnect structure, and a semiconductor chip disposed on the substrate. The conductive wire unit includes a conductive wire that interconnects the semiconductor chip and the interconnect structure. The cover unit includes a cover member that covers the conductive wire. The cover member includes an insulating layer formed by atomic layer deposition. A method for making the semiconductor device is also disclosed.Type: ApplicationFiled: December 27, 2021Publication date: June 30, 2022Inventors: Chao-Cheng TING, Yu-Hsien LIN, Yu-An LI
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Patent number: 11297734Abstract: A heat dissipation module for optical transceiver is provided. The heat dissipation module for optical transceiver includes a liquid cooling device, a casing assembly and an elastic fastener. The liquid cooling device includes a liquid cooling tube and a base, and the liquid cooling tube is in connection with the base. The casing assembly includes a top plate. The top plate includes a top surface, a bottom surface and an opening. The opening is through the top surface and the bottom surface. At least one part of the liquid cooling device is extended into the opening and protruded over the bottom surface. The elastic fastener is configured for fastening the liquid cooling device on the casing assembly, and the liquid cooling device is pluggably fastened to the casing assembly.Type: GrantFiled: June 30, 2020Date of Patent: April 5, 2022Assignee: DELTA ELECTRONICS, INC.Inventor: Yu-Hsien Lin
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Publication number: 20210381421Abstract: A fluid connector assembly includes a housing, an elastic member and a floating component. The housing has an opening. The elastic member is disposed in the opening of the housing. The floating component is movably supported by the elastic member and includes a fluid passage and a first guiding structure. The fluid passage is configured to be connected to a fluid device. The first guiding structure is configured to engage with a second guiding structure of the fluid device.Type: ApplicationFiled: May 3, 2021Publication date: December 9, 2021Inventors: Yu-Jei HUANG, Yu-Hsien LIN
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Publication number: 20210280695Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.Type: ApplicationFiled: May 20, 2021Publication date: September 9, 2021Inventors: Ryan Chia-Jen Chen, Li-Wei Yin, Tzu-Wen Pan, Cheng-Chung Chang, Shao-Hua Hsu, Yi-Chun Chen, Yu-Hsien Lin, Ming-Ching Chang
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Patent number: 11114549Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.Type: GrantFiled: March 1, 2018Date of Patent: September 7, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ryan Chia-Jen Chen, Ming-Ching Chang, Yi-Chun Chen, Yu-Hsien Lin, Li-Wei Yin, Tzu-Wen Pan, Cheng-Chung Chang, Shao-Hua Hsu
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Publication number: 20210007243Abstract: A heat dissipation module for optical transceiver is provided. The heat dissipation module for optical transceiver includes a liquid cooling device, a casing assembly and an elastic fastener. The liquid cooling device includes a liquid cooling tube and a base, and the liquid cooling tube is in connection with the base. The casing assembly includes a top plate. The top plate includes a top surface, a bottom surface and an opening. The opening is through the top surface and the bottom surface. At least one part of the liquid cooling device is extended into the opening and protruded over the bottom surface. The elastic fastener is configured for fastening the liquid cooling device on the casing assembly, and the liquid cooling device is pluggably fastened to the casing assembly.Type: ApplicationFiled: June 30, 2020Publication date: January 7, 2021Inventor: Yu-Hsien Lin
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Publication number: 20200388497Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.Type: ApplicationFiled: August 24, 2020Publication date: December 10, 2020Inventors: Jin-Dah Chen, Ming-Feng Shieh, Han-Wei Wu, Yu-Hsien Lin, Po-Chun Liu, Stan Chen