Patents by Inventor Yu-Hung Cheng

Yu-Hung Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10155369
    Abstract: The present disclosure relates to a method for debonding a pair of bonded substrates. In the method, a debonding apparatus is provided comprising a wafer chuck, a flex wafer assembly, and a set of separating blades. The pair of bonded substrates is placed upon the wafer chuck so that a first substrate of the bonded substrate pair is in contact with a chuck top surface. The flex wafer assembly is placed above the bonded substrate pair so that its first surface is in contact with an upper surface of a second substrate of the bonded substrate pair. A pair of separating blades having different thicknesses is inserted between the first and second substrates from edges of the pair of bonded substrates diametrically opposite to each other while the second substrate is concurrently pulled upward until the flex wafer assembly flexes the second substrate from the first substrate. By providing unbalanced initial torques on opposite sides of the bonded substrate pair, edge defects and wafer breakage are reduced.
    Type: Grant
    Filed: June 5, 2017
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chang-Chen Tsao, Kuo Liang Lu, Ru-Liang Lee, Sheng-Hsiang Chuang, Yu-Hung Cheng, Yeur-Luen Tu, Cheng-Kang Hu
  • Publication number: 20180350601
    Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.
    Type: Application
    Filed: July 24, 2018
    Publication date: December 6, 2018
    Inventors: Wen-Chin Chen, Cheng-Yi Wu, Yu-Hung Cheng, Ren-Hua Guo, Hsiang Liu, Chin-Szu Lee
  • Patent number: 10147756
    Abstract: Deep trench isolation (DTI) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a substrate. A recess is formed in the substrate, the substrate comprising a first semiconductor material, the recess being interposed between adjacent photosensitive regions. The recess is enlarged by removing a damaged layer of the substrate along sidewalls of the recess, thereby forming an enlarged recess. An epitaxial region is formed on sidewalls and a bottom of the enlarged recess, at least a portion of the epitaxial region comprising a second semiconductor material, the second semiconductor material being different from the first semiconductor material. A dielectric region is formed on the epitaxial region, the epitaxial region extending along a sidewall of the dielectric region.
    Type: Grant
    Filed: October 23, 2017
    Date of Patent: December 4, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hung Cheng, Yeur-Luen Tu, Tung-I Lin, Cheng-Lung Wu, Wei-Li Chen
  • Patent number: 10147609
    Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: December 4, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wen-Chin Chen, Cheng-Yi Wu, Yu-Hung Cheng, Ren-Hua Guo, Hsiang Liu, Chin-Szu Lee
  • Publication number: 20180308928
    Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a supporting substrate. The semiconductor device structure also includes a first carrier-trapping layer covering the supporting substrate. The first carrier-trapping layer is doped with a group-IV dopant. The semiconductor device structure further includes an insulating layer covering the first carrier-trapping layer. In addition, the semiconductor device structure includes a semiconductor substrate over the insulating layer. The semiconductor device structure also includes a transistor. The transistor includes a gate stack over the semiconductor substrate and source and drain structures in the semiconductor substrate.
    Type: Application
    Filed: April 20, 2017
    Publication date: October 25, 2018
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Hung CHENG, Yong-En SYU, Kuo-Hwa TZENG, Ke-Dian WU, Cheng-Ta WU, Yeur-Luen TU, Ming-Che YANG, Wei-Kung TSAI
  • Patent number: 10109756
    Abstract: A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.
    Type: Grant
    Filed: August 12, 2015
    Date of Patent: October 23, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Hung Cheng, Chia-Shiung Tsai, Cheng-Ta Wu, Xiaomeng Chen, Yen-Chang Chu, Yeur-Luen Tu
  • Publication number: 20180269111
    Abstract: A method for fabricating a semiconductor device includes providing a first wafer comprising a substrate and a first semiconductor material layer, bonding the first wafer to a second wafer, the second wafer comprising a sacrificial layer and a second semiconductor material layer, removing the sacrificial layer, patterning the bonded wafers to create a first structure and a second structure, removing the second semiconductor material from the first structure, forming a first type of transistor in the first semiconductor material of the first structure, and forming a second type of transistor in the second semiconductor material of the second structure.
    Type: Application
    Filed: May 17, 2018
    Publication date: September 20, 2018
    Inventors: Yu-Hung CHENG, Ching-Wei TSAI, Yeur-Luen TU, Tung-I LIN, Wei-Li CHEN
  • Publication number: 20180175196
    Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.
    Type: Application
    Filed: March 31, 2017
    Publication date: June 21, 2018
    Inventors: Wen-Chin Chen, Cheng-Yi Wu, Yu-Hung Cheng, Ren-Hua Guo, Hsiang Liu, Chin-Szu Lee
  • Publication number: 20180158863
    Abstract: Backside illuminated (BSI) image sensor devices are described as having pixel isolation structures formed on a sacrificial substrate. A photolayer is epitaxially grown over the pixel isolation structures. Radiation-detecting regions are formed in the photolayer adjacent to the pixel isolation structures. The pixel isolation structures include a dielectric material. The radiation-detecting regions include photodiodes. A backside surface of the BSI image sensor device is produced by planarized removal of the sacrificial substrate to physically expose the pixel isolation structures or at least optically expose the photolayer.
    Type: Application
    Filed: February 5, 2018
    Publication date: June 7, 2018
    Inventors: Yu-Hung Cheng, Tung-I Lin, Wei-Li Chen, Yeur-Luen Tu
  • Publication number: 20180147825
    Abstract: The present disclosure relates to a method for debonding a pair of bonded substrates. In the method, a debonding apparatus is provided comprising a wafer chuck, a flex wafer assembly, and a set of separating blades. The pair of bonded substrates is placed upon the wafer chuck so that a first substrate of the bonded substrate pair is in contact with a chuck top surface. The flex wafer assembly is placed above the bonded substrate pair so that its first surface is in contact with an upper surface of a second substrate of the bonded substrate pair. A pair of separating blades having different thicknesses is inserted between the first and second substrates from edges of the pair of bonded substrates diametrically opposite to each other while the second substrate is concurrently pulled upward until the flex wafer assembly flexes the second substrate from the first substrate. By providing unbalanced initial torques on opposite sides of the bonded substrate pair, edge defects and wafer breakage are reduced.
    Type: Application
    Filed: June 5, 2017
    Publication date: May 31, 2018
    Inventors: Chang-Chen Tsao, Kuo Liang Lu, Ru-Liang Lee, Sheng-Hsiang Chuang, Yu-Hung Cheng, Yeur-Luen Tu, Cheng-Kang Hu
  • Patent number: 9978650
    Abstract: A transistor device includes a substrate having a first region and a second region, a first semiconductor layer of a first semiconductor material having a first portion over the first region and a second portion over the second region, the first portion being separated from the second portion, a second semiconductor layer of a second semiconductor material over the second portion of the first semiconductor layer, a first transistor of a first conductivity type, the first transistor disposed within the first region and having a first set of source/drain regions formed in the first semiconductor layer, and a second transistor of a second conductivity type, the second transistor disposed within the second region and having a second set of source/drain regions formed in the second semiconductor layer. The second conductivity type is different than the second conductivity type, and the second semiconductor material is different from the first semiconductor material.
    Type: Grant
    Filed: January 6, 2015
    Date of Patent: May 22, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hung Cheng, Ching-Wei Tsai, Yeur-Luen Tu, Tung-I Lin, Wei-Li Chen
  • Patent number: 9905600
    Abstract: The present disclosure provides a method of manufacturing an image sensor device. The method includes: forming an etch stop layer on a first substrate; forming a light-sensing region comprising a light sensing quantum structure being able to detect a wavelength greater than about 1.5 um; forming a semiconductive substrate over the light-sensing region, the semiconductive substrate comprising an active component; forming an isolation structure extended through the light-sensing region; selectively removing the first substrate to expose the etch stop layer; and thinning the etch stop layer thereby exposing the light-sensing region.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: February 27, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yu-Hung Cheng, Yeur-Luen Tu, Tung-I Lin, Cheng-Lung Wu
  • Patent number: 9899441
    Abstract: A method for manufacturing a deep trench isolation (DTI) structure with a tri-layer passivation layer is provided. An etch is performed into a semiconductor substrate to form a trench. A first undoped semiconductor layer is formed by epitaxy lining surfaces of the semiconductor substrate that define the trench. A doped semiconductor layer is formed by epitaxy over and lining the first undoped semiconductor layer in the trench. A second undoped semiconductor layer is formed by epitaxy over and lining the doped semiconductor layer in the trench. A structure resulting from the method is also provided.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: February 20, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Hung Cheng, Cheng-Lung Wu, Tung-I Lin, Yeur-Luen Tu
  • Publication number: 20180047777
    Abstract: Deep trench isolation (DTI) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a substrate. A recess is formed in the substrate, the substrate comprising a first semiconductor material, the recess being interposed between adjacent photosensitive regions. The recess is enlarged by removing a damaged layer of the substrate along sidewalls of the recess, thereby forming an enlarged recess. An epitaxial region is formed on sidewalls and a bottom of the enlarged recess, at least a portion of the epitaxial region comprising a second semiconductor material, the second semiconductor material being different from the first semiconductor material. A dielectric region is formed on the epitaxial region, the epitaxial region extending along a sidewall of the dielectric region.
    Type: Application
    Filed: October 23, 2017
    Publication date: February 15, 2018
    Inventors: Yu-Hung Cheng, Yeur-Luen Tu, Tung-I Lin, Cheng-Lung Wu, Wei-Li Chen
  • Patent number: 9887235
    Abstract: Backside illuminated (BSI) image sensor devices are described as having pixel isolation structures formed on a sacrificial substrate. A photolayer is epitaxially grown over the pixel isolation structures. Radiation-detecting regions are formed in the photolayer adjacent to the pixel isolation structures. The pixel isolation structures include a dielectric material. The radiation-detecting regions include photodiodes. A backside surface of the BSI image sensor device is produced by planarized removal of the sacrificial substrate to physically expose the pixel isolation structures or at least optically expose the photolayer.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: February 6, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hung Cheng, Tung-I Lin, Wei-Li Chen, Yeur-Luen Tu
  • Patent number: 9799702
    Abstract: Deep trench isolation (DTI) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a substrate. A recess is formed in the substrate, the substrate comprising a first semiconductor material, the recess being interposed between adjacent photosensitive regions. The recess is enlarged by removing a damaged layer of the substrate along sidewalls of the recess, thereby forming an enlarged recess. An epitaxial region is formed on sidewalls and a bottom of the enlarged recess, at least a portion of the epitaxial region comprising a second semiconductor material, the second semiconductor material being different from the first semiconductor material. A dielectric region is formed on the epitaxial region, the epitaxial region extending along a sidewall of the dielectric region.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: October 24, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hung Cheng, Yeur-Luen Tu, Tung-I Lin, Cheng-Lung Wu, Wei-Li Chen
  • Publication number: 20170301611
    Abstract: The present disclosure provides a semiconductor structure, including: a semiconductor device layer including a first surface and a second surface, wherein the first surface is at a front side of the semiconductor device layer, and the second surface is at a backside of the semiconductor device layer; an insulating layer above the second surface of the semiconductor device; and a through-silicon via (TSV) traversing the insulating layer. Associated manufacturing methods of the same are also provided.
    Type: Application
    Filed: April 15, 2016
    Publication date: October 19, 2017
    Inventors: YU-HUNG CHENG, SHIH-PEI CHOU, YEUR-LUEN TU, ALEXANDER KALNITSKY, TUNG-I LIN, WEI-LI CHEN
  • Publication number: 20170278893
    Abstract: Deep trench isolation (DTI) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a substrate. A recess is formed in the substrate, the substrate comprising a first semiconductor material, the recess being interposed between adjacent photosensitive regions. The recess is enlarged by removing a damaged layer of the substrate along sidewalls of the recess, thereby forming an enlarged recess. An epitaxial region is formed on sidewalls and a bottom of the enlarged recess, at least a portion of the epitaxial region comprising a second semiconductor material, the second semiconductor material being different from the first semiconductor material. A dielectric region is formed on the epitaxial region, the epitaxial region extending along a sidewall of the dielectric region.
    Type: Application
    Filed: March 24, 2016
    Publication date: September 28, 2017
    Inventors: Yu-Hung Cheng, Yeur-Luen Tu, Tung-I Lin, Cheng-Lung Wu, Wei-Li Chen
  • Patent number: 9728641
    Abstract: A method of fabricating a semiconductor device. The method includes forming an isolation feature in a substrate, forming a first gate stack and a second gate stack over the substrate, forming a first recess cavity and a second recess cavity in the substrate, growing a first epitaxial (epi) material in the first recess cavity and a second epi material in the second recess cavity, and etching the first epi material and the second epi material. The first recess cavity is between the isolation feature and the first gate stack and the second recess cavity is between the first gate stack and the second gate stack. A topmost surface of the first epi material has a first crystal plane and a topmost surface of the second epi material has a second crystal plane. The topmost surface of the etched first epi material has a third crystal plane different from both the first crystal plane and the second crystal plane.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: August 8, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Ru Lee, Ming-Hua Yu, Tze-Liang Lee, Chii-Horng Li, Pang-Yen Tsai, Lilly Su, Yi-Hung Lin, Yu-Hung Cheng
  • Publication number: 20170170231
    Abstract: Backside illuminated (BSI) image sensor devices are described as having pixel isolation structures formed on a sacrificial substrate. A photolayer is epitaxially grown over the pixel isolation structures. Radiation-detecting regions are formed in the photolayer adjacent to the pixel isolation structures. The pixel isolation structures include a dielectric material. The radiation-detecting regions include photodiodes. A backside surface of the BSI image sensor device is produced by planarized removal of the sacrificial substrate to physically expose the pixel isolation structures or at least optically expose the photolayer.
    Type: Application
    Filed: December 11, 2015
    Publication date: June 15, 2017
    Inventors: Yu-Hung Cheng, Tung-I Lin, Wei-Li Chen, Yeur-Luen Tu