Abstract: The invention relates to a light emitting diode, which comprises a substrate and a semiconductor epitaxy structure. The semiconductor epitaxial structure is disposed on the substrate. The semiconductor epitaxial structure comprises semiconductor composite layers and a plurality of current spreading layers which are disposed among the semiconductor composite layers. The doping concentrations of the upper and lower adjacent current spreading layers are alternately high and low.

Abstract: A semiconductor device includes a resistive random access memory (RRAM) device, a dual damascene structure, and a spacer. The dual damascene structure is disposed near the RRAM device, and the spacer is disposed in a sidewall of the RRAM device. The RRAM device includes a lower electrode, a metal oxide layer, and an upper electrode. The metal oxide layer is disposed on the lower electrode, and the upper electrode is disposed on the metal oxide layer. The dual damascene structure includes a via and a wire disposed on the via, in which a top part of the wire is coplanar with a top part of the upper electrode in the RRAM device.

Abstract: A force sensing device is mounted on a tool to sense force, particularly quasi-static and static forces. The force sensing device includes at least one a sensor. A piezoelectric element in the sensor includes a driving portion and a sensing portion. A first voltage is input to the driving portion to generate a vibration in the piezoelectric element and a second voltage in response to the vibration is output from the sensing portion. The second voltage output from the sensing portion is changed as the vibration in the piezoelectric element is suppressed by an external force acting on the force sensing device so variation of the second voltage can be used to measure the external force.

Abstract: A method for forming a semiconductor structure includes the following steps. A first trench is formed in a semiconductor substrate, and a first nitride layer is formed along a sidewall and a bottom surface of the first trench. A first oxide layer is formed over the first nitride layer to fill the first trench, and the first oxide layer is recessed from the first trench to form a first recess. A portion of the first nitride layer exposed from the first recess is etched, and a second nitride layer is formed along a sidewall and a bottom surface of the first recess. The second nitride layer includes a first portion along the bottom surface and a second portion along the sidewall. The second portion is removed, and a second oxide layer is formed over the first portion to fill the first recess.

Abstract: A semiconductor structure including a substrate, a first dielectric layer, a first conductive feature, an etch stop layer, a second dielectric layer and a second conductive feature is provided. The first dielectric layer is disposed over the substrate. The first conductive feature is disposed in the first dielectric layer. The etch stop layer is disposed over the first dielectric layer and the first conductive feature, wherein the etch stop layer comprises a metal-containing layer and a silicon-containing layer, the metal-containing layer is located between the first dielectric layer and the silicon-containing layer, the metal-containing layer comprises a nitride-containing region and an oxide-containing region, and the nitride-containing region contacts the first conductive feature. The second dielectric layer is disposed over the etch stop layer. The second conductive feature penetrates the second dielectric layer and electrically connects with the first conductive feature.

Abstract: A method of building upstream-and-downstream configuration of sensors includes determining two sets of geographic position data of a target sensor and a candidate sensor, obtaining pollution-associated periods according to pieces of flow field data, the sets of geographic position data and pieces of target sensing data of the target sensor to determine a pollution-associated period, calculating a correlation between target sensing data obtained by the target sensor during the pollution-associated period and candidate sensing data obtained by the candidate sensor during the associated air pollution period to obtain sensor correlations, and determining the target sensor and the candidate sensor having a upstream-and-downstream relationship with the candidate sensor being used as a satellite sensor of the target sensor when a quantity ratio of sensor correlations being larger than or equal to a correlation threshold is larger than or equal to a default ratio.

Abstract: A zone heater assembly of a reflow solder tool includes a gas deflector having a single-layer structure. The single-layer structure may include one or more gas-permeating patterns through which a process gas is to flow from one or more gas outlets to a gas exhaust of the zone heater assembly. The one or more gas-permeating patterns in the single-layer structure promote uniformity of gas flow through the gas exhaust and into a heating zone of the reflow solder tool. The uniformity of the gas flow of the process gas enables convection heat provided by the process gas to be uniformly distributed across the heating zone. In this way, the gas deflector described herein may decrease hot spots and/or cold spots in the heating zone, which enables greater flexibility in placement of semiconductor package substrates on a conveyor device of the reflow solder tool.

Abstract: A magnetic tunnel junction (MTJ) structure and a memory cell are provided. The MTJ includes a barrier layer, a free layer and a metal oxide cap layer. The free layer is disposed on the barrier layer. The metal oxide cap layer is disposed on the free layer. The metal oxide cap layer has a first surface and a second surface opposite to the first surface. The first surface of the metal oxide cap layer is in contact with the free layer. In a direction of a thickness of the metal oxide cap layer, both of an oxygen concentration at the first surface of the metal oxide cap layer and an oxygen concentration at the second surface of the metal oxide cap layer are higher than an oxygen concentration in a middle portion of the metal oxide cap layer.

Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.

Abstract: A method for etching a magnetic tunneling junction (MTJ) structure is described. A MTJ stack is deposited on a bottom electrode wherein the MTJ stack comprises at least a pinned layer, a barrier layer on the pinned layer, and a free layer on the barrier layer, A top electrode layer is deposited on the MTJ stack. A hard mask is deposited on the top electrode layer. The top electrode layer and hard mask are etched. Thereafter, the MTJ stack not covered by the hard mask is etched, stopping at or within the pinned layer. Thereafter, an encapsulation layer is deposited over the partially etched MTJ stack and etched away on horizontal surfaces leaving a self-aligned hard mask on sidewalls of the partially etched MTJ stack. Finally, the remaining MTJ stack not covered by hard mask and self-aligned hard mask is etched to complete the MTJ structure.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.

Abstract: An optical system includes a pancake lens assembly and a varifocal lens device. The varifocal lens device is coupled to the pancake lens assembly in a way that an optical axis of the varifocal lens device is in alignment with an optical axis of the pancake lens assembly, thereby permitting the optical system to have an adjustable focal length.

Abstract: An optical member driving mechanism for connecting an optical member is provided, including a fixed portion and a first adhesive member. The fixed portion includes a first member and a second member, wherein the first member is fixedly connected to the second member via the first adhesive member.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate having sidewalls that form one or more trenches. The one or more trenches are disposed along opposing sides of a photodiode and vertically extend from an upper surface of the semiconductor substrate to within the semiconductor substrate. A doped region is arranged along the upper surface of the semiconductor substrate and along opposing sides of the photodiode. A first dielectric lines the sidewalls of the semiconductor substrate and the upper surface of the semiconductor substrate. A second dielectric lines sidewalls and an upper surface of the first dielectric. The doped region has a width laterally between a side of the photodiode and a side of the first dielectric. The width of the doped region varies at different heights along the side of the photodiode.

Abstract: A party popper contains: a cylinder, a sealing element, a drive element, a flexible fitting element, and a weaken structure. The cylinder includes a first segment and a second segment. The sealing element is a film and is configured to close the second segment. The multiple streamers are filled in the cylinder. A diameter of the drive element is equal to a diameter of the cylinder. The flexible fitting element is made of flexible material with low elastic modulus, and the flexible fitting element includes a cap, a neck section, and a head. The weaken structure surrounds the neck section, and a pulling length is defined to pull off the weaken structure by pulling the weaken structure from the head to the neck section and the cap, such that the weaken structure is pulled off to remove the neck section and the head from the cap.

Abstract: A method for fabricating a magnetic tunneling junction (MTJ) structure is described. A first dielectric layer is deposited on a bottom electrode and partially etched through to form a first via opening having straight sidewalls, then etched all the way through to the bottom electrode to form a second via opening having tapered sidewalls. A metal layer is deposited in the second via opening and planarized to the level of the first dielectric layer. The remaining first dielectric layer is removed leaving an electrode plug on the bottom electrode. MTJ stacks are deposited on the electrode plug and on the bottom electrode wherein the MTJ stacks are discontinuous. A second dielectric layer is deposited over the MTJ stacks and polished to expose a top surface of the MTJ stack on the electrode plug. A top electrode layer is deposited to complete the MTJ structure.

Abstract: An optical subassembly for switchably focusing or redirecting a light beam may include a polarization element having a polarization-selective beam redirection/focusing property, a first switchable polarization rotator upstream of the polarization element, and a second switchable polarization rotator downstream of the polarization element. A polarizer may be provided immediately downstream of the second switchable polarization rotator. The first and second switchable polarization rotators may be operated in counterphase, so as to mutually offset dependence of angle and wavelength characteristics of the polarization rotators on the switching state of the polarization rotators.

Abstract: A construction combination includes a construction member, and an acoustic absorbing device engaged in the construction member for absorbing acoustic sounds. The acoustic absorbing device includes a housing engaged in the construction member, and a casing engaged in the housing. The housing includes one or more couplers, and the casing includes one or more connectors for engaging with the couplers and for anchoring the casing in the housing. A sound absorbing member is engaged in the casing, and the sound absorbing member includes an anchor for engaging with the casing and for anchoring the sound absorbing member in the casing.

Abstract: An ultra-large height top electrode for MRAM is achieved by employing a novel thin metal/thick dielectric/thick metal hybrid hard mask stack. Etching parameters are chosen to etch the dielectric quickly but to have an extremely low etch rate on the metals above and underneath. Because of the protection of the large thickness of the dielectric layer, the ultra-large height metal hard mask is etched with high integrity, eventually making a large height top electrode possible.

Abstract: A plasma enhanced chemical vapor deposition (PECVD) method is disclosed for forming a SiON encapsulation layer on a magnetic tunnel junction (MTJ) sidewall that minimizes attack on the MTJ sidewall during the PECVD or subsequent processes. The PECVD method provides a higher magnetoresistive ratio for the MTJ than conventional methods after a 400° C. anneal. In one embodiment, the SiON encapsulation layer is deposited using a N2O:silane flow rate ratio of at least 1:1 but less than 15:1. A N2O plasma treatment may be performed immediately following the PECVD to ensure there is no residual silane in the SiON encapsulation layer. In another embodiment, a first (lower) SiON sub-layer has a greater Si content than a second (upper) SiON sub-layer. A second encapsulation layer is formed on the SiON encapsulation layer so that the encapsulation layers completely fill the gaps between adjacent MTJs.