Abstract: An example of the present invention provides a metal composite catalyst for ammonia decomposition and hydrogen production including a carrier; and Ni metal particles dispersed on a surface of the carrier or inside a pore, in which a content of the Ni metal particle is 15 to 70 parts by weight with reference to 100 parts by weight of the metal composite catalyst, and a diameter of the Ni metal particle is 60 nm or less. More specifically, the metal composite catalyst according to an example of the present invention is manufactured by an ultrasonic method, includes an aging step, and exhibits high efficiency and economy in ammonia decomposition and hydrogen production processes.

Abstract: A single-phase immersion cooling system includes an immersion cooling tank having a component area, which is separate from a main chamber and is configured to receive a heat-generating electronic device. A coolant circulates along a flow path, in a chamber path through the main chamber and a component path through the component area. A rotating propeller is mounted within the immersion cooling tank, causing a driven flow path in the component area. The driven flow path is configured to cause contact between the coolant in the driven flow path and the heat-generating electronic device when the heat-generating electronic device is received within the component area. The coolant in the driven flow path circulates at a faster speed than the coolant in the chamber path.

Abstract: A display device and a bezel thereof are provided. The display device includes a display panel and a bezel. The display panel has a first surface and a second surface. The first surface includes at least one pixel pad section, and the second surface includes at least one circuit pad section. The bezel includes a first surface connecting portion, a second surface connecting portion and at least one conductive wire. The edge of the display panel having the pixel pad section and the circuit pad section is accommodated between the first surface connecting portion and the second surface connecting portion. Each conductive wire has a first end and a second end. The first end is disposed on the first surface connecting portion and the second end is disposed on the second surface connecting portion. The part of the first connecting portion having the first end corresponds to the pixel pad section, and the part of the second connecting portion having the second end corresponds to the circuit pad section.

Abstract: A computer-implemented method, a computer system, and computer program product for associating security events. The method includes obtaining a result of implementation of one or more Locality-Sensitive Hashing (LSH) functions to feature data of a first event detected by a first device. The method also includes mapping the result to one or more positions in a data structure. In response to data elements of the one or more positions indicating first information associating with the one or more positions exists in a storage, the method includes obtaining the first information from the storage. The method further includes sending the first information to the first device.

Abstract: A semiconductor device according to the present disclosure includes a gate extension structure, a first source/drain feature and a second source/drain feature, a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a direction, and a gate structure wrapping around each of the vertical stack of channel members. The gate extension structure is in direct contact with the first source/drain feature.

Abstract: Provided are mesenchymal stem cells, a preparation method therefor, and a use thereof, the mesenchymal stem cell having oxidative stress resistance by reducing or inhibiting the expression or activity level of KEAP1, which is a negative regulator of Nrf2, so as to increase the activity of Nrf2.

Abstract: A localization device and a localization method for a vehicle are provided. The localization device includes an inertia measurer, an encoder, an image capturing device, and a processor. The processor obtains an encoded data by the encoder to generate a first odometer data, obtains an inertial data by the inertia measurer to generate a heading angle estimation data, and obtains an environmental image data by the image capturing device to generate a second odometer data. In a first fusion stage, the processor fuses the heading angle estimation data and the first odometer data to generate first fusion data. In a second fusion stage, the processor fuses the first fusion data, the heading angle estimation data and the second odometer data to generate pose estimation data corresponding to the localization device.

Abstract: A semiconductor device and a method for manufacturing an interconnecting metal layer thereof are provided. The semiconductor device includes a gate layer, a dielectric layer, an insulating layer, an epitaxial layer, and a sidewall liner. The dielectric layer is disposed on one side of the gate layer, the insulating layer is disposed on another side of the gate layer, the epitaxial layer is located on the insulating layer, and the sidewall liner penetrates the dielectric layer and the gate layer, and one end of the sidewall liner is connected to the epitaxial layer. The sidewall liner is converted from a high-k material to a low-k material by hydrogen and oxygen plasma treatments.

Abstract: A display panel includes a base layer, a circuit layer, a light emitting element layer, and an encapsulation layer. The light emitting element layer includes a lower electrode on the circuit layer, a lower pixel defining film that covers a portion of the lower electrode to define a light emitting opening portion and is on the circuit layer, a light emitting pattern inside the light emitting opening portion and on the lower electrode, an upper electrode on the light emitting pattern, and an upper pixel defining film that defines an upper opening portion and is on the lower pixel defining film. The encapsulation layer includes a first inorganic encapsulation film on the upper electrode and the upper pixel defining film, and a transparent conductive oxide film on the first inorganic encapsulation film.

Abstract: An integrated circuit includes a first and second active region, a first insulating region, and a first and second contact. The first and second active region extend in a first direction, and are on a first level. The first active region includes a first and second drain/source region. The second active region includes a third drain/source region. The first insulating region is over the first drain/source region. The first contact overlaps the third drain/source region, is electrically coupled to the third drain/source region and is located on a second level. The second contact includes a first and second portion. The first portion overlaps the first and second drain/source. The second portion overlaps the first contact, the first and third drain/source region, and the first insulating region, and is electrically coupled to the first portion, and electrically insulated from the first drain/source region.

Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.

Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: One aspect of the present disclosure relates to a phase transfer cosmetic composition. According to the present disclosure, there can be provided a cosmetic composition which contains a wax having a melting point of 40 to 60° C. and an inulin-based surfactant, wherein the composition maintains a liquid state before applied to the skin and rubbed, and changes to a solid state when applied to the skin, can solve the problems in terms of hygiene and use because it is not used by scooping it by hand, and further, changes its phase to a solid state when applied to the skin and then rubbed, and thus, can solve the problem of dripping when applied to face or skin.

Abstract: A switching regulator includes: a power stage circuit; a control circuit; and an operation clock signal generator circuit configured to generate plural test clock signals during a clock determination period and generate an operation clock signal during a normal operation period. When the switching regulator operates during the clock determination period in a discontinuous conduction mode, the control circuit alternatingly generates plural PWM signals corresponding to the test clock signals generated by the operation clock signal generator circuit and an output voltage, wherein each PWM signal corresponds to one test clock signal, so that the power stage circuit generates corresponding phase node voltages at a phase node, wherein among the plural test clock signals, the operation clock signal generator circuit selects one test clock signal corresponding to a minimum phase node voltage as the operation clock signal during the normal operation period.

Abstract: A circuit check method and an electronic apparatus applicable to a to-be-tested circuit are provided. The to-be-tested circuit has one or more first nodes related to a gate voltage of one or more transistor devices and a plurality of second nodes. The circuit check method includes: setting endpoint voltages of a plurality of input interface ports of the to-be-tested circuit; obtaining a first node voltage of the first node according to a conduction path of the to-be-tested circuit and the gate voltage of the transistor device; obtaining a second node voltage of each second node according to the conduction path, the endpoint voltages, and the first node voltage; and performing circuit static check on the to-be-tested circuit by applying the first node voltage and the second node voltage.

Abstract: The present invention relates to a scanner having a flexible probe which is an apparatus capable of being utilized for an inspection on a weld zone of a general ferrite material and a stainless material and allowing an inspection to be performed on a fitting weld zone where it is difficult for a general phased array ultrasonic testing (PAUT) probe to approach.

Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.

Abstract: Disclosed is a method for providing real-time bus information by a terminal, the method including: receiving ultra-precise bus information about buses scheduled to arrive at a bus stop from a server; and based on the ultra-precise bus information, displaying at least one bus which moves toward the bus stop and disappears after passing the bus stop on a map area.