Abstract: A display panel includes a base layer, a circuit layer, a light emitting element layer, and an encapsulation layer. The light emitting element layer includes a lower electrode on the circuit layer, a lower pixel defining film that covers a portion of the lower electrode to define a light emitting opening portion and is on the circuit layer, a light emitting pattern inside the light emitting opening portion and on the lower electrode, an upper electrode on the light emitting pattern, and an upper pixel defining film that defines an upper opening portion and is on the lower pixel defining film. The encapsulation layer includes a first inorganic encapsulation film on the upper electrode and the upper pixel defining film, and a transparent conductive oxide film on the first inorganic encapsulation film.

Abstract: A semiconductor device and a method for manufacturing an interconnecting metal layer thereof are provided. The semiconductor device includes a gate layer, a dielectric layer, an insulating layer, an epitaxial layer, and a sidewall liner. The dielectric layer is disposed on one side of the gate layer, the insulating layer is disposed on another side of the gate layer, the epitaxial layer is located on the insulating layer, and the sidewall liner penetrates the dielectric layer and the gate layer, and one end of the sidewall liner is connected to the epitaxial layer. The sidewall liner is converted from a high-k material to a low-k material by hydrogen and oxygen plasma treatments.

Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.

Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: One aspect of the present disclosure relates to a phase transfer cosmetic composition. According to the present disclosure, there can be provided a cosmetic composition which contains a wax having a melting point of 40 to 60° C. and an inulin-based surfactant, wherein the composition maintains a liquid state before applied to the skin and rubbed, and changes to a solid state when applied to the skin, can solve the problems in terms of hygiene and use because it is not used by scooping it by hand, and further, changes its phase to a solid state when applied to the skin and then rubbed, and thus, can solve the problem of dripping when applied to face or skin.

Abstract: A switching regulator includes: a power stage circuit; a control circuit; and an operation clock signal generator circuit configured to generate plural test clock signals during a clock determination period and generate an operation clock signal during a normal operation period. When the switching regulator operates during the clock determination period in a discontinuous conduction mode, the control circuit alternatingly generates plural PWM signals corresponding to the test clock signals generated by the operation clock signal generator circuit and an output voltage, wherein each PWM signal corresponds to one test clock signal, so that the power stage circuit generates corresponding phase node voltages at a phase node, wherein among the plural test clock signals, the operation clock signal generator circuit selects one test clock signal corresponding to a minimum phase node voltage as the operation clock signal during the normal operation period.

Abstract: A circuit check method and an electronic apparatus applicable to a to-be-tested circuit are provided. The to-be-tested circuit has one or more first nodes related to a gate voltage of one or more transistor devices and a plurality of second nodes. The circuit check method includes: setting endpoint voltages of a plurality of input interface ports of the to-be-tested circuit; obtaining a first node voltage of the first node according to a conduction path of the to-be-tested circuit and the gate voltage of the transistor device; obtaining a second node voltage of each second node according to the conduction path, the endpoint voltages, and the first node voltage; and performing circuit static check on the to-be-tested circuit by applying the first node voltage and the second node voltage.

Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.

Abstract: The present invention relates to a scanner having a flexible probe which is an apparatus capable of being utilized for an inspection on a weld zone of a general ferrite material and a stainless material and allowing an inspection to be performed on a fitting weld zone where it is difficult for a general phased array ultrasonic testing (PAUT) probe to approach.

Abstract: Disclosed is a method for providing real-time bus information by a terminal, the method including: receiving ultra-precise bus information about buses scheduled to arrive at a bus stop from a server; and based on the ultra-precise bus information, displaying at least one bus which moves toward the bus stop and disappears after passing the bus stop on a map area.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.

Abstract: A memory device includes a substrate, a first transistor and a second transistor, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate and are electrically connected to each other, in which each of the first and second transistors includes first semiconductor layers and second semiconductor layers, a gate structure, and source/drain structures, in which the first semiconductor layers are in contact with the second semiconductor layers, and a width of the first semiconductor layers is narrower than a width of the second semiconductor layers. The first word line is electrically connected to the gate structure of the first transistor. The second word line is electrically connected to the gate structure of the second transistor. The bit line is electrically connected to a first one of the source/drain structures of the first transistor.

Abstract: The present invention discloses a display including a display panel and a light redirecting film disposed on the viewing side of the display panel. The light redirecting film comprises a light redistribution layer, and a light guide layer disposed on the light redistribution layer. The light redistribution layer includes a plurality of strip-shaped micro prisms extending along a first direction and arranged at intervals and a plurality of diffraction gratings arranged at the bottom of the intervals between the adjacent strip-shaped micro prisms, wherein each of the strip-shaped micro prisms has at least one inclined light-guide surface, and the bottom of each interval has at least one set of diffraction gratings, and the light guide layer is in contact with the strip-shaped micro prisms and the diffraction gratings.

Abstract: Techniques are provided for optimizing storage of database records in segments using sub-segments. A base segment is a container used for storing records that belong to a database object. A database management system receives a request to load, into the database object, a first set of records that are in a first state. In response to receiving the request, the system generates a new sub-segment, which is a container that is separate from the base segment. The system stores the first set of records, in their first state, within the sub-segment. The system then monitors one or more characteristics of the database system. In response to the one or more characteristics satisfying criteria, the system performs a migration of one or more records of the first set of records from the sub-segment to the base segment. During the migration, the system converts the one or more records from the first state to a second state and stores the one or more records, in their second state, in the base segment.

Abstract: The present invention provides a pharmaceutical composition for prevention or treatment of a stress disease and depression, the pharmaceutical composition be safely useable without toxicity and side effects by using an extract of leaves of Vaccinium bracteatum Thunb., which is natural resource of Korea, so that the reduction of manufacturing and production costs and the import substitution and export effects can be expected through the replacement of a raw material for preparation with a plant inhabiting in nature.

Abstract: A method of encoding video data includes determining an integer sample in a reference picture of the video data; determining, based on the integer sample, at least a first fractional sample and a second fractional sample, wherein the first fractional sample has a first fractional pel resolution, and the second fractional sample has a second fractional pel resolution different from the first fractional pel resolution; subsequent to determining both the first fractional sample and the second fractional sample, determining a first cost metric associated with the first fractional sample and a second cost metric associated with the second fractional sample; determining a reference block for a current block based on at least one of the first cost metric or the second cost metric; and encoding the current block based on the reference block.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.