Abstract: A positioning method and a positioning apparatus are provided. The positioning method is applied to a lock end and includes the following. The lock end sends first information and records a first sending moment of the first information. The key end receives the first information, records a first receiving moment, and sends second information to the lock end, where the second information includes request information, a second sending moment of the request information, and the first receiving moment. The lock end receives the second information, records a second receiving moment, and calculates a difference between the second sending moment and the first receiving moment. The lock end calculates a distance between the lock end and the key end according to the first sending moment, the second receiving moment, and the difference between the second sending moment and the first receiving moment.

Abstract: Manufacturing method of semiconductor package includes following steps. Bottom package is provided. The bottom package includes a die and a redistribution structure electrically connected to die. A first top package and a second top package are disposed on a surface of the redistribution structure further away from the die. An underfill is formed into the space between the first and second top packages and between the first and second top packages and the bottom package. The underfill covers at least a side surface of the first top package and a side surface of the second top package. A hole is opened in the underfill within an area overlapping with the die between the side surface of the first top package and the side surface of the second top package. A thermally conductive block is formed in the hole by filling the hole with a thermally conductive material.

Abstract: A device communication method includes: establishing, by an electric device, a communication connection with a charging device; and performing, by the electric device, a function negotiation with the charging device through the communication connection. A service function of the function negotiation includes a charging and discharging function and/or a discharging function.

Abstract: A spin orbit torque magnetoresistive random access memory (SOT MRAM) includes at least a spin current source alloy layer, a ferromagnetic free layer, and an insulation layer. The spin current source alloy layer is a nickel-tungsten alloy layer. The ferromagnetic free layer is located on the spin current source alloy layer. The insulation layer is located on the ferromagnetic free layer. Since the nickel-tungsten alloy layer has favorable perpendicular magnetic anisotropic and can maintain a high spin Hall angle, it is suitable as a spin current source for the SOT MRAM.

Abstract: A gesture recognition method includes steps of (S1) capturing a current image; (S2) determining whether the image includes a hand image; (S3) when a determination result of step S2 is satisfied, determining whether the hand image is a valid gesture; (S4) when a determination result of step S3 is satisfied, the gesture recognition unit records multiple coordinate information and time information of multiple locations corresponding to multiple fingers in a finger list, and storing the finger list in the storage unit; (S5) the gesture recognition unit obtaining an orientation of the palm; (S6) the gesture recognition unit calculating a width of the palm and a dynamic displacement threshold; (S7) the gesture recognition unit determining whether to launch an action command according to the orientation of the palm, the dynamic displacement threshold, and a determination condition; (S8) when the determination result of step S7 is satisfied, launching the action command.

Abstract: A solar cell module includes a first substrate, a second substrate, at least one cell unit, a first packaging film, a second packaging film, a first protective layer, a second protective layer, and a plurality of support members. The first substrate and the second substrate are disposed opposite to each other. The cell unit is disposed between the first substrate and the second substrate. The first packaging film is disposed between the cell unit and the first substrate. The second packaging film is disposed between the cell unit and the second substrate. The first protective layer is disposed between the cell unit and the first packaging film. The second protective layer is disposed between the cell unit and the second packaging film. The support members are respectively disposed between the first packaging film and the second packaging film and surround at least two opposite sides of the cell unit.

Abstract: Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a plurality of semiconductor layers vertically stacked, a plurality of inner spacers, each being disposed between two adjacent semiconductor layers. The structure also includes a source/drain feature in contact with each of the inner spacers, a gate electrode layer surrounding a portion of each of the plurality of the semiconductor layers, and a cap layer disposed between the source/drain feature and each of the plurality of the semiconductor layers.

Abstract: Operations to recognize clock ports within a simulation circuit component and/or recognize a clock signal within simulation waveforms are described. One or more of the operations include generating a plurality of output values at an output port of a circuit simulation component by applying, during a simulation, a plurality of input values to a first input port of the circuit simulation component. The operations also include calculating a correlation vector based on bit sequences in the input values and bit sequences in the output values. The first input port is determined to be a clock port by applying a machine learning model to the correlation vector.

Abstract: A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.

Abstract: An application-level memory control group of a first application may be created when the first application is opened. An anonymous page of the first application is added to a least recently used linked list of the application-level memory control group, and a file page of the first application is added to a global least recently used linked list. An application-level memory control group is created in a dimension of an application, and an anonymous page of the application is managed in a refined manner. In addition, a file page of the application-level memory control group may be managed based on a global least recently used linked list.

Abstract: Described herein are—inter alia—complexes comprising a curcuminoid; and an anionic surfactant. Methods of making and using same are also described.

Abstract: This application provides an electric vehicle battery control circuit, system, and control method. The electric vehicle battery control circuit includes an electric vehicle battery, an energy storage module, a charging module, and a regulation switch component; where the charging module includes a switch module; the electric vehicle battery is connected in parallel with the switch module; the regulation switch component includes multiple switches, where the multiple switches are disposed between the electric vehicle battery and the charging module and between the energy storage module and the charging module; and the energy storage module, the regulation switch component, and the switch module are configured to, in response to control signals, regulate charging/discharging between the electric vehicle battery and the energy storage module, or regulate charging/discharging between the electric vehicle battery and the charging module as well as the energy storage module.

Abstract: A drug carrier with a property of crossing the blood-brain barrier comprises an extracellular vesicle with a human leukocyte antigen-G antibody on its surface. This carrier can serve as a pharmaceutical composition for promoting apoptosis of brain tumor cells, inhibiting growth of brain tumor cells, or reducing expression of O6-methylguanine-DNA methyltransferase (MGMT) in brain tumor cells. These effects contribute to the treatment of glioblastoma multiforme (GBM).

Abstract: The disclosure provides a node in a wireless communication system and methods performed by the same. A method performed by a first node in a wireless communication system is provided.

Abstract: Presented are systems and methods for high accuracy positioning. A wireless communication device may determine a first information element and a second information element that configure a pathloss reference signal and a spatial relation of a reference signal for uplink positioning, respectively. The wireless communication device may send the reference signal based on the first information element and the second information element to a wireless communication node.

Abstract: The present invention provides a high-strength and high-plasticity titanium matrix composite and a preparation method thereof. The preparation method includes: preparing high-oxygen hydride-dehydride titanium powder using a high-temperature rotary ball grinding treatment process, in which the prepared hydride-dehydride titanium powder has a particle size of 10-40 ?m, and has an oxygen content of 0.8-1.5 wt. %; preparing high-purity ultra-fine oxygen adsorbent powder using a wet grinding method of high-energy vibration ball grinding treatment process; in which a purity of the oxygen adsorbent powder is ?99.9%, and a particle size of the oxygen adsorbent powder is ?8 ?m; mixing the high-oxygen hydride-dehydride titanium powder with the oxygen adsorbent powder in a protective atmosphere, and then press-forming the powder obtained after mixing to obtain a raw material blank; and performing atmosphere protective sintering treatment on the raw material blank to obtain a titanium matrix composite.

Abstract: A memory cell includes a write port and a read port. The write port includes two cross-coupled inverters that form a storage unit. The cross-coupled inverters are connected between a first power source signal line and a second power source signal line. The write port also includes a first local interconnect line in an interconnect layer that is connected to the second power source signal line. The read port includes a transistor that is connected to the storage unit in the write port and to the second power source signal line, and a second local interconnect line in the interconnect layer that is connected to the second power source signal line. The second local interconnect line in the read port is separate from the first local interconnect line in the write port.

Abstract: A cell module is provided. The cell module includes a first substrate; a second substrate disposed opposite to the first substrate; a cell unit disposed between the first substrate and the second substrate; a first thermosetting resin layer disposed between the cell unit and the first substrate; a crosslinked polymer layer disposed between the cell unit and the first thermosetting resin layer; and a second thermosetting resin layer disposed between the cell unit and the second substrate. The crosslinked polymer layer includes a crosslinked polymer, and the crosslinked polymer has a crosslinking degree of from 35.4 to 67.4%.

Abstract: Methods of filling a feature with large grain tungsten include deposition of a tungsten carbon nitride (WCN) or tungsten nitride (WN) film that lines the feature. The WCN or WN film may be treated. It provides a template for subsequent growth of large grain tungsten. The top of the feature is treated with nitrogen to inhibit nucleation, facilitating bottom-up growth. In some embodiments, single grain tungsten is grown from the bottom up. Methods of at least partially filling a feature with single grain tungsten include treatment of the feature. In some embodiments, single grain tungsten is grown without a liner layer in the feature.

Abstract: This application relates to a communication method and device. A remote terminal device receives a first data packet from a relay terminal device by using an SRB1. The first data packet includes a first message and an SRAP header. The remote terminal device removes the SRAP header via an SRAP entity to obtain configuration information. The SRAP entity is determined before the SRAP header is removed. The remote terminal device configures the SRAP entity based on the configuration information. The remote terminal device may predetermine the SRAP entity.