Abstract: A laser fusion welding device includes a 1.9 ?m laser light source, a control unit and a light spot adjusting device. The control unit is configured to control the laser light source and the light spot adjusting device to adjust a laser power density at an object to be subjected to fusion welding. The 1.9 ?m laser light source has output power of 100-500 W. The control unit includes a time control unit, a power control unit and a light spot control unit. The time control unit is configured to control a turn-on time of the laser light source. The power control unit is configured to control the output power of the laser light source. The light spot control unit is configured to control the light spot adjusting device to adjust a size of a light spot at the object to be subjected to fusion welding.

Abstract: Systems and methods for indicating positioning information in wireless communication systems are disclosed. In one aspect, a method includes receiving, by a wireless communication device from a network, network timing error information; and reporting, by the wireless communication device to the network, downlink measurement results and User Equipment (UE) timing error information, wherein, the network timing error information comprises at least one of Transmission and Reception Point (TRP) transmission Timing Error Group (TEG) information and TRP reception TEG information; the UE timing error information comprises at least one of UE transmission TEG information and UE reception TEG information.

Abstract: A method and apparatus are disclosed. In an example from the perspective of a first device, a grant is received from a network node. The grant allocates a set of sidelink data resources. One or more sidelink data transmissions are performed on the set of sidelink data resources. A second feedback information associated with the one or more sidelink data transmissions is received and/or detected. An uplink resource is derived. A first feedback information is transmitted on the uplink resource to the network node. The first feedback information is set based upon the second feedback information.

Abstract: Disclosed are compounds of Formula (I), methods of using the compounds for inhibiting ALK2 activity and pharmaceutical compositions comprising such compounds. The compounds are useful in treating, preventing or ameliorating diseases or disorders associated with ALK2 activity such as cancer.

Abstract: A chip packaging structure and a method for fabricating the same are provided. The chip package structure includes a conductive substrate, a dam and a metal shielding layer. The conductive substrate includes a substrate, vias and electrodes. The substrate has first and second board surfaces opposite to each other. The vias penetrate through the first board surface and the second board surface, and a part of the vias is disposed in a first die-bonding region on which a chip is to be arranged. The electrodes extend from the first board surface to the second board surface through the vias. The dam is formed on the first board surface to surround the first die-bonding region, and the dam has a height higher than that of the chip. The metal shielding layer covers the dam and a part of the first board surface that do not overlap with the electrodes.

Abstract: A package structure including a redistribution circuit structure, a wiring substrate, first conductive terminals, an insulating encapsulation, and a semiconductor device is provided. The redistribution circuit structure includes stacked dielectric layers, redistribution wirings and first conductive pads. The first conductive pads are disposed on a surface of an outermost dielectric layer among the stacked dielectric layers, the first conductive pads are electrically connected to outermost redistribution pads among the redistribution wirings by via openings of the outermost dielectric layer, and a first lateral dimension of the via openings is greater than a half of a second lateral dimension of the outermost redistribution pads. The wiring substrate includes second conductive pads. The first conductive terminals are disposed between the first conductive pads and the second conductive pads. The insulating encapsulation is disposed on the surface of the redistribution circuit structure.

Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a first die disposed on and electrically coupled to a first redistribution structure and laterally covered by a first insulating encapsulation, a second die disposed over the first die and laterally covered by a second insulating encapsulation, a second redistribution structure interposed between and electrically coupled to the first and second dies, a third redistribution structure disposed on the second die and opposite to the second redistribution structure, and at least one thermal-dissipating feature embedded in a dielectric layer of the third redistribution structure and electrically isolated from a patterned conductive layer of the third redistribution structure through the dielectric layer. Through substrate vias of the first die are physically connected to the second redistribution structure or the first redistribution structure.

Abstract: A method includes forming a dielectric layer over a contact pad of a device, forming a first polymer layer over the dielectric layer, forming a first conductive line and a first portion of a second conductive line over the first polymer layer, patterning a photoresist to form an opening over the first portion of the second conductive feature, wherein after patterning the photoresist the first conductive line remains covered by photoresist, forming a second portion of the second conductive line in the opening, wherein the second portion of the second conductive line physically contacts the first portion of the second conductive line, and forming a second polymer layer extending completely over the first conductive line and the second portion of the second conductive line.

Abstract: A semiconductor package includes a semiconductor die, an encapsulant, a first and second dielectric layer, a through via, an extension pad, and a routing via. The semiconductor die includes a contact post. The first dielectric layer extends on the encapsulant. The through via extends through the first dielectric layer and has one end contacting the contact post. The extension pad is disposed on the first dielectric layer, contacting an opposite end of the through via with respect to the contact post. The extension pad has an elongated shape, a first end of the extension pad overlaps with the contact post and the through via, and a second end of the extension pad overlaps with the encapsulant. The second dielectric layer is disposed on the first dielectric layer and the extension pad. The routing via extends through the second dielectric layer to contact the second end of the extension pad.

Abstract: A team sports vision training system based on extended reality, voice interaction and action recognition is configured to train vision and an action of a user. A head-mounted display device includes a task scenario player and a speech sensing module. An action capture device generates an action message. A computing server stores a scenario setting parameter group and includes a task scenario generating module, a speech recognition module and an action recognition module. The task scenario generating module generates a virtual task scenario image and a task parameter group according to the scenario setting parameter group. The speech recognition module generates a speech recognition result and a vision training result. Then action recognition module generates an action recognition result and a sport training result. The vision training result and the sport training result are configured to judge whether the user meets a training requirement.

Abstract: A method of treating a subject suffering from cancer comprising a step of administering an effective amount of a group of double-stranded RNA molecules to the subject, wherein the RNA molecule is isolated or derived from a bacteria of the genus Escherichia. A method of inhibiting growth or proliferation of cancer cells comprising a step of contacting said cells with said RNA molecule; and a pharmaceutical composition for treating cancer comprising said RNA molecule and a pharmaceutically tolerable excipient. Also a double-stranded RNA molecule and a recombinant vector comprising the double-stranded RNA molecule.

Abstract: Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal layer of boron (B) on a substrate. The substrate generally includes a feature to be filled with tungsten with the boron layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a continuous flow of hydrogen and pulses of fluorine-containing tungsten precursor in a pulsed CVD process. The conformal boron layer is converted to a conformal tungsten layer.

Abstract: Embodiments for operational envelope detection (OED) with situational assessment are disclosed. Embodiments herein relate to an operational envelope detector that is configured to receive, as inputs, information related to sensors of the system and information related to operational design domain (ODD) requirements. The OED then compares the information related to sensors of the system to the information related to the ODD requirements, and identifies whether the system is operating within its ODD or whether a remedial action is appropriate to adjust the ODD requirements based on the current sensor information. Other embodiments are described and/or claimed.

Abstract: A system and method for determining SFN using QCL information is disclosed. In one aspect, a method receiving, by a wireless communication device, a first set of quasi-co-location (QCL) information; receiving, by the wireless communication device, a transmission; and applying, by the wireless communication device, a second set of QCL information based on the first set of QCL information, wherein the second set of QCL information is different from the first set of QCL information.

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. The disclosure provides a method performed by a first node in a wireless communication system is provided. The method includes transmitting, by the first node, a first message to a second node, the first message including first indication information, and transmitting, by the first node, a second message to a third node, the second message including second indication information, wherein the third node is a candidate node configured by network for the second node.

Abstract: Manufacturing method of semiconductor package includes following steps. Bottom package is provided. The bottom package includes a die and a redistribution structure electrically connected to die. A first top package and a second top package are disposed on a surface of the redistribution structure further away from the die. An underfill is formed into the space between the first and second top packages and between the first and second top packages and the bottom package. The underfill covers at least a side surface of the first top package and a side surface of the second top package. A hole is opened in the underfill within an area overlapping with the die between the side surface of the first top package and the side surface of the second top package. A thermally conductive block is formed in the hole by filling the hole with a thermally conductive material.

Abstract: A memory cell includes a write port and a read port. The write port includes two cross-coupled inverters that form a storage unit. The cross-coupled inverters are connected between a first power source signal line and a second power source signal line. The write port also includes a first local interconnect line in an interconnect layer that is connected to the second power source signal line. The read port includes a transistor that is connected to the storage unit in the write port and to the second power source signal line, and a second local interconnect line in the interconnect layer that is connected to the second power source signal line. The second local interconnect line in the read port is separate from the first local interconnect line in the write port.

Abstract: Manufacturing method of semiconductor package includes following steps. Bottom package is provided. The bottom package includes a die and a redistribution structure electrically connected to die. A first top package and a second top package are disposed on a surface of the redistribution structure further away from the die. An underfill is formed into the space between the first and second top packages and between the first and second top packages and the bottom package. The underfill covers at least a side surface of the first top package and a side surface of the second top package. A hole is opened in the underfill within an area overlapping with the die between the side surface of the first top package and the side surface of the second top package. A thermally conductive block is formed in the hole by filling the hole with a thermally conductive material.

Abstract: A package structure includes an insulating encapsulation, a semiconductor die, and a filter structure. The semiconductor die is encapsulated in the insulating encapsulation. The filter structure is electrically coupled to the semiconductor die, wherein the filter structure includes a patterned metallization layer with a pattern having a double-spiral having aligned centroids thereof.

Abstract: A package structure includes an insulating encapsulation, a semiconductor die, and a filter structure. The semiconductor die is encapsulated in the insulating encapsulation. The filter structure is electrically coupled to the semiconductor die, wherein the filter structure includes a patterned metallization layer with a pattern having a double-spiral having aligned centroids thereof.