Patents by Inventor Yu Ping

Yu Ping has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220415891
    Abstract: A capacitor includes cup-shaped lower electrodes disposed on a substrate, a capacitor dielectric layer conformally covering inner surfaces and outer surfaces of the cup-shaped lower electrodes, and a support layer disposed between outer surfaces of the cup-shaped lower electrodes to connect the cup-shaped lower electrodes. The capacitor further includes an annealed oxide layer, which is interposed between the inner surfaces of the cup-shaped lower electrodes and the capacitor dielectric layer, and is also interposed between a portion of the outer surfaces of the cup-shaped lower electrodes and the capacitor dielectric layer. A method for forming the capacitor is also provided.
    Type: Application
    Filed: February 4, 2022
    Publication date: December 29, 2022
    Inventors: Yu-Ping HSIAO, Cheol-Soo PARK, Chun-Hung CHENG, Wei-Chieh CHUANG, Wei-Chao CHOU, Yen-Min JUAN
  • Publication number: 20220392955
    Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first spin orbit torque (SOT) layer on the MTJ; forming a passivation layer around the MTJ; forming a second SOT layer on the first SOT layer and the passivation layer; and patterning the second SOT layer and the passivation layer.
    Type: Application
    Filed: July 7, 2021
    Publication date: December 8, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hung-Chan Lin, Yu-Ping Wang
  • Publication number: 20220392954
    Abstract: A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a MTJ on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes a stripe pattern according to a top view and the blocking layer could include metal or a dielectric layer.
    Type: Application
    Filed: August 15, 2022
    Publication date: December 8, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Jia-Rong Wu, I-Fan Chang, Rai-Min Huang, Ya-Huei Tsai, Yu-Ping Wang
  • Publication number: 20220373719
    Abstract: An optical device is provided. The optical device has a central region and a first-type region surrounding the central region. The first-type region includes a first sub-region and a second sub-region between the central region and the first sub-region. The optical device includes a substrate. The optical device also includes a meta-structure disposed on the substrate. The meta-structure includes first pillars in the first sub-region and second pillars in the second sub-region. In the cross-sectional view of the optical device along the radial direction of the optical device, two adjacent first pillars have a first pitch, two adjacent second pillars have a second pitch, and the second pitch is greater than the first pitch.
    Type: Application
    Filed: May 24, 2021
    Publication date: November 24, 2022
    Inventors: Kuo-Feng LIN, Yu-Ping TSENG, Chin-Chuan HSIEH
  • Patent number: 11508904
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.
    Type: Grant
    Filed: May 5, 2021
    Date of Patent: November 22, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Patent number: 11505989
    Abstract: A window blind includes a headrail, two lift cords, a blind body, a bottom rail, and two cord winding assemblies that are respectively installed on two opposite sides of the long axis of the bottom rail. The other ends of the lift cords are respectively tied to respective adjustment columns of the cord winding assemblies. When the window blind is folded or stretched, unfortunately, when the winding stroke is inconsistent, the blind body is not folded uniformly or skewed, and the adjustment column of the cord winding assembly on one side can be finely adjusted, so that one of the lift cords is gradually wound and covered on the adjustment column, and indirectly drives the bottom rail and the blind body to gradually adjust to substantially parallel to the bottom of the headrail, thereby effectively achieving the effect of fine-tuning and correcting the blind body.
    Type: Grant
    Filed: November 17, 2021
    Date of Patent: November 22, 2022
    Assignee: CHING FENG HOME FASHIONS CO., LTD.
    Inventors: Ming-Chu Chiang, Yu-Ping Chou
  • Publication number: 20220361349
    Abstract: The invention discloses a movable locking ear and an electrical device. The electrical device comprises a frame and a movable locking ear. The frame comprises a first recess, a second recess opposite to the first recess, and a side wall between the first recess and the second recess. The movable locking ear comprises a first fastening member for fastening the first recess, a second fastening member opposite to the second fastening member for fastening the second recess, and a resisting member between the first fastening member and the second fastening member. A position of a bending end of the resisting member is near or far from the side wall depending on a distance between the first fastening member and the second fastening member.
    Type: Application
    Filed: April 30, 2022
    Publication date: November 10, 2022
    Inventors: Chieh-We KU, Chia-Lin CHANG, Yu-Ping WENG, Chih-Nan CHEN
  • Publication number: 20220349851
    Abstract: A solid-liquid contact electrification-based self-driving chemical sensor includes a container, a contact liquid, an electrode, a solid triboelectric layer, a rectifier, a load, and a displacement device. The contact liquid is placed in the container. The electrode may be actively or passively moved into the container to be immersed in or emerged from the contact liquid. The solid triboelectric layer surrounds and covers a surface of the electrode. The solid triboelectric layer includes a sensing layer which becomes a reacted sensing layer by reacting to a target analyte. The rectifier and the load are connected to the electrode. The displacement device is connected to the electrode or the container to perform a periodic reciprocating motion, so that the solid triboelectric layer is in contact with and separated from the contact liquid, thereby generating a surface charge transfer to generate an electrical output signal.
    Type: Application
    Filed: June 23, 2021
    Publication date: November 3, 2022
    Applicant: National Tsing Hua University
    Inventors: Zong-Hong Lin, Yu-Ping Pao, Subhodeep Chatterjee, Arnab Pal, Yu-Zih Lin
  • Publication number: 20220344507
    Abstract: A semiconductor device includes a substrate, a dielectric layer, a source region, a drain region, and a metal structure. The substrate has a trench therein, and the dielectric layer is conformally formed over the substrate and the trench. The source region and the least one drain region are in the substrate. The metal structure is filled in the trench and surrounded by the dielectric layer, and the metal structure is disposed between the source region and the drain region. Moreover, the metal structure has a first metal portion and a second metal portion which has a height greater than a height of the first metal portion, and the first metal portion is disposed between the drain region and the second metal portion.
    Type: Application
    Filed: July 11, 2022
    Publication date: October 27, 2022
    Inventors: Yu-Ping CHEN, Jhen-Yu TSAI
  • Publication number: 20220336735
    Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.
    Type: Application
    Filed: July 5, 2022
    Publication date: October 20, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Wei Chen, Po-Kai Hsu, Yu-Ping Wang, Hung-Yueh Chen
  • Patent number: 11476404
    Abstract: An ultrasonic sensing device includes a housing, a piezoelectric assembly, a board and a plurality of fixing members. The housing includes a bottom wall, a top wall and a surrounding side wall connected between the top wall and the bottom wall. The piezoelectric assembly includes an encapsulating body and a piezoelectric sheet, wherein at least a portion of the piezoelectric sheet is enclosed by the encapsulating body and has a sensing surface exposed to the encapsulating body and facing the bottom wall. The board is disposed on the top wall of the housing and has a pressing surface facing the encapsulating body and the top wall. The plurality of fixing members is configured to fix the board to the top wall of the housing to press the board to the encapsulating body of the piezoelectric assembly, thereby pressing the sensing surface of the piezoelectric sheet to the bottom wall.
    Type: Grant
    Filed: February 20, 2020
    Date of Patent: October 18, 2022
    Assignee: Qian Jun Technology Ltd.
    Inventors: Chi-Shen Lee, Yu-Yen Fu, Po-Chun Yeh, Dong-Fu Chen, Chih-Wen Cheng, Chi-Lin Huang, Yu-Ping Yen
  • Publication number: 20220308198
    Abstract: This document describes radar tracking with model estimates augmented by radar detections. An example tracker analyzes information derived using radar detections to enhance radar tracks having object measurements estimated from directly analyzing data cubes with a model (e.g., a machine-learning model). High-quality tracks with measurements to objects of importance can be quickly produced with the model. However, the model only estimates measurements for classes of objects its training or programming can recognize. To improve estimated measurements from the model, or even in some cases, to convey additional classes of objects, the tracker separately analyzes detections. Detections that consistently align to objects recognized by the model can update model-derived measurements conveyed initially in the tracks. Consistently observed detections that do not align to existing tracks may be used to establish new tracks for conveying more classes of objects than the model can recognize.
    Type: Application
    Filed: February 2, 2022
    Publication date: September 29, 2022
    Inventors: Jan K. Schiffmann, David Aaron Schwartz, Susan Yu-Ping Chen, Nianxia Cao
  • Patent number: 11455103
    Abstract: A cloud secured storage system is provided in a peer-to-peer network that includes a client end and a farm end. A user file is segmented and a hash function is used for encryption to generate a plurality of data chunks together with an Information Dispersal Algorithm. The plurality of data chunks are respectively stored in a plurality of cloud servers. The plurality of cloud servers backup the plurality of data chunks as a backup file. If the data chunk in one of the plurality of cloud servers is lost, the adjacent cloud server transmits the backup file to the cloud server where the data chunk is lost. The cloud secured storage system of the present disclosure successfully stores the user file in the plurality of cloud servers to prevent cyberattacks owing to the process of file segmentation, encryption, backup file, and algorithm.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: September 27, 2022
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Tsung-Nan Lin, Yu-Ping Huang
  • Patent number: 11456331
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, forming a magnetic tunneling junction (MTJ) on the MRAM region, forming a metal interconnection on the MTJ, forming a dielectric layer on the metal interconnection, patterning the dielectric layer to form openings, and forming the blocking layer on the patterned dielectric layer and the metal interconnection and into the openings.
    Type: Grant
    Filed: April 23, 2020
    Date of Patent: September 27, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Jia-Rong Wu, I-Fan Chang, Rai-Min Huang, Ya-Huei Tsai, Yu-Ping Wang
  • Publication number: 20220299626
    Abstract: This document describes techniques and systems related to tracking different sections of articulated vehicles. A vehicle uses a radar system that can discern between unarticulated vehicles and articulated vehicles, which by definition have multiple sections that can pivot in different directions for turning or closely following a curve. The radar system obtains detections indicative of another vehicle traveling nearby. When the detections indicate the other vehicle is articulated, the radar system tracks each identifiable section, rather than tracking all the sections together. A bounding box is generated for each identifiable section; the radar system separately and concurrently monitors a velocity of each bounding box. The multiple bounding boxes that are drawn enable the radar system to accurately track each connected section of the articulated vehicle, including to detect whether any movement occurs between two connected sections, for accurately localizing the vehicle when driving.
    Type: Application
    Filed: February 21, 2022
    Publication date: September 22, 2022
    Inventors: Susan Yu-Ping Chen, Jan K. Schiffmann
  • Publication number: 20220302374
    Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, a top electrode layer on the magnetic tunnel junction stack, and a hard mask layer on said top electrode layer, wherein the material of top electrode layer is titanium nitride, a material of said hard mask layer is tantalum or tantalum nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
    Type: Application
    Filed: June 9, 2022
    Publication date: September 22, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, JUN XIE
  • Publication number: 20220285437
    Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a substrate having a first active region, a second active region, and a word line connecting region between the first active region and the second active region, a first gate pattern extending along a first direction from the first active region to the second active region, a second gate pattern extending along the first direction from the first active region to the second active region, a first magnetic tunneling junction (MTJ) between the first gate pattern and the second pattern and within the word line connecting region, and a second MTJ between the first gate pattern and the second gate pattern in the first active region. Preferably, top surfaces of the first MTJ and the second MTJ are coplanar.
    Type: Application
    Filed: May 22, 2022
    Publication date: September 8, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ya-Huei Tsai, Rai-Min Huang, Yu-Ping Wang, Hung-Yueh Chen
  • Patent number: 11424360
    Abstract: A semiconductor device includes a substrate, a dielectric layer, a source region, a drain region, and a metal structure. The substrate has a trench therein, and the dielectric layer is conformally formed over the substrate and the trench. The source region and the least one drain region are in the substrate. The metal structure is filled in the trench and surrounded by the dielectric layer, and the metal structure is disposed between the source region and the drain region. Moreover, the metal structure has a first metal portion and a second metal portion which has a height greater than a height of the first metal portion, and the first metal portion is disposed between the drain region and the second metal portion.
    Type: Grant
    Filed: February 4, 2021
    Date of Patent: August 23, 2022
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: Yu-Ping Chen, Jhen-Yu Tsai
  • Publication number: 20220263017
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to and directly contacting the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is a single layer structure made of dielectric material and an edge of the cap layer contacts the first IMD layer directly.
    Type: Application
    Filed: May 5, 2022
    Publication date: August 18, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
  • Publication number: 20220263016
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a top electrode on the MTJ stack; performing a first patterning process to remove the MTJ stack for forming a first MTJ; forming a first inter-metal dielectric (IMD) layer around the first MTJ; and performing a second patterning process to remove the first MTJ for forming a second MTJ and a third MTJ.
    Type: Application
    Filed: May 3, 2022
    Publication date: August 18, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang