Patents by Inventor Yu-Wen Wang

Yu-Wen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Precursor solution for polyimide/silica composite material, its manufacture method, and polyimide/silica composite material having low volume shrinkage
    Patent number: 8101703
    Abstract: A process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, including adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)4-x to allow the silica moiety to carry a photo-polymerizable unsaturated group; adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9 and x are as defined in the specification. Also, a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material is useful in microelectronic devices, semiconductor elements, and photoelectric elements.
    Type: Grant
    Filed: July 30, 2010
    Date of Patent: January 24, 2012
    Assignee: Eternal Chemical Co., Ltd
    Inventors: Chung-Jen Wu, Min-Chi Wang, Chung-Hung Chang, Meng-Yen Chou, Chin-Chang Chuang, Hsin-Wei Huang, Shu-Wan Lu, Chin-Min An, Chung-Hao Wu, Wen-Chang Chen, Cheng-Tyng Yen, Yu-Wen Wang, Kuo-Huang Hsieh
  • PRECURSOR SOLUTION FOR POLYIMIDE/SILICA COMPOSITE MATERIAL, ITS MANUFACTURE METHOD, AND POLYIMIDE/SILICA COMPOSITE MATERIAL HAVING LOW VOLUME SHRINKAGE
    Publication number: 20100297455
    Abstract: The present invention relates to a process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, comprising adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4-x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. The present invention also relates to a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material of the present invention is useful in microelectronic devices, semiconductor elements, and photoelectric elements.
    Type: Application
    Filed: July 30, 2010
    Publication date: November 25, 2010
    Inventors: Chung-Jen WU, Min-Chi Wang, Chung-Hung Chang, Meng-Yen Chou, Chin-Chang Chuang, Hsin-Wei Huang, Shu-Wan Lu, Chin-Min An, Chung-Hao Wu, Wen-Chang Chen, Cheng-Tyng Yen, Yu-Wen Wang, Kuo-Huang Hsieh
  • Precursor solution for polyimide/silica composite material, its manufacture method, and polymide/silica composite material having low volume shrinkage
    Patent number: 7790828
    Abstract: A process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, including adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4?x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. Also, a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material is useful in microelectronic devices, semiconductor elements, and photoelectric elements.
    Type: Grant
    Filed: May 2, 2005
    Date of Patent: September 7, 2010
    Assignee: Eternal Chemical Co., Ltd.
    Inventors: Chung-Jen Wu, Min-Chi Wang, Chung-Hung Chang, Meng-Yen Chou, Chin-Chang Chuang, Hsin-Wei Huang, Shu-Wan Lu, Chin-Min An, Chung-Hao Wu, Wen-Chang Chen, Cheng-Tyng Yen, Yu-Wen Wang, Kuo-Huang Hsieh
  • Precursor solution for polyimide/silica composite material, its manufacture method, and polymide/silica composite material having low volume shrinkage
    Publication number: 20050245715
    Abstract: The present invention relates to a process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, comprising adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4-x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. The present invention also relates to a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material of the present invention is useful in microelectronic devices, semiconductor elements, and photoelectric elements.
    Type: Application
    Filed: May 2, 2005
    Publication date: November 3, 2005
    Inventors: Chung-Jen Wu, Min-Chi Wang, Chung-Hung Chang, Meng-Yen Chou, Chin-Chang Chuang, Hsin-Wei Huang, Shu-Wan Lu, Chin-Min An, Chung-Hao Wu, Wen-Chang Chen, Cheng-Tyng Yen, Yu-Wen Wang, Kuo-Huang Hsieh