Abstract: The disclosure provides a printing layer trimming method and an electronic device using the same. The printing layer trimming method is suitable for the electronic device and includes steps as follows. An original layer is converted into a first printing layer. At least one data region of the first printing layer is identified to identify at least one blank region of the first printing layer. Then, the blank region of the first printing layer is trimmed off The trimmed first printing layer is further converted into a print head signal data and provided to a printing device to print a corresponding three-dimensional structure. The disclosure also provides another printing layer trimming method and an electronic device using the same for trimming a second printing layer generated according to a print head signal data and providing the second printing layer to a printing device to print a corresponding three-dimensional structure.

Abstract: A method of manufacturing a Fin FET includes forming a fin structure including an upper layer. Part of the upper layer is exposed from an isolation insulating layer. A dummy gate structure is formed over part of the fin structure. The dummy gate structure includes a dummy gate electrode layer and a dummy gate dielectric layer. An interlayer insulating layer is formed over the dummy gate structure. The dummy gate structure is removed so that a space is formed. A gate dielectric layer is formed in the space. A first metal layer is formed over the gate dielectric in the space. A second metal layer is formed over the first metal layer in the space. The first and second metal layers are partially removed, thereby reducing a height of the first and second metal layers. A third metal layer is formed over the partially removed first and second metal layers.

Abstract: A system for controlling key access using a phone and Internet-connected key box device. The key box device comprises a SIM card programmed with a unique phone number associated with the key box. Calling the phone number using any phone will provide access to the key box. A cloud computing software application then interfaces with operations programmed into a circuit board. A user then unlocks a key chamber by calling the number at a scheduled time. The key box device owner monitors and controls access to the box and its key chamber via the software application.

Abstract: An aspect of this description relates to a method that includes partially filling an opening in a dielectric material with a high-dielectric-constant material. The method also includes partially filling the opening with a first metal material over the high-dielectric-constant material. The method further includes filling the opening with a capping layer over the first metal material. The method additionally includes partially removing the first metal material and the capping layer in the opening using a wet etching process in a solution including one or more of H2O2, NH4OH, HCl, H2SO4 or diluted HF. The method also includes fully removing the remaining capping layer in the opening using a wet etching process in a solution includes one or more of NH4OH or diluted HF. The method further includes depositing a second metal material in the opening over the remaining first metal material.

Abstract: A printed circuit board for an electronic device includes first and second sets of differential vias. Each set of differential vias comprises two vias. A first line segment couples two centres of the two vias of the first set of differential vias. A second line segment couples two centres of the two vias of the second set of differential vias. The first line segment is parallel to the second line segment, and is offset a first distance from the second line segment. A first perpendicular bisector of the first line segment is offset a second distance from a second perpendicular bisector of the second line segment. The second distance is between 45 mil and 55 mil. Therefore, the near end crosstalk and far end crosstalk of two couples of differential vias are minimum.

Abstract: A device for the injection of CMP slurry used in chemical mechanical polishing includes a main body and an outputting member. The main body has an applying end and is configured to be driven to swing over a to-be-polished surface. The outputting member has a channel a plurality of spraying holes communicated with the channel. The channel extends along a central axis. The spraying holes are arranged on the outputting member along a route, and each of the spraying holes faces the to-be-polished surface. The outputting member is pivotally connected to the applying end, so that slurry flows in the channel and is delivered to the to-be-polished surface through the spraying holes. The device for the injection of CMP slurry can evenly distribute the slurry and properly control the slurry in terms of using amount, direction and coverage, and is easy to clean and maintain.

Abstract: The present invention relates to an LED lamp comprising a bulb-shaped outer shell, a lamp plate assembly and a lamp socket. The bulb-shaped outer shell is formed of two half shells which can be bonded with each other in a left-right direction. Each of the two half shells has a groove on an inner surface thereof. The lamp plate assembly comprises a substrate, a plurality of first LEDs, a plurality of second LEDs and a conductive wire. The substrate comprises driving circuit elements and is inserted into an annular groove that is defined by the grooves of the two half shells. The substrate has a first surface and a second surface opposite to the first surface. The plurality of first LEDs and the plurality of second LEDs are respectively mounted on the first surface and the second surface of the substrate along a periphery of the substrate. An end of the conductive wire is electrically connected to the substrate.

Abstract: An aspect of this description relates to a method that includes partially filling an opening in a dielectric material with a high-dielectric-constant material. The method also includes partially filling the opening with a first metal material over the high-dielectric-constant material. The method further includes filling the opening with a capping layer over the first metal material. The method additionally includes partially removing the first metal material and the capping layer in the opening using a wet etching process in a solution including one or more of H2O2, NH4OH, HCl, H2SO4 or diluted HF. The method also includes fully removing the remaining capping layer in the opening using a wet etching process in a solution includes one or more of NH4OH or diluted HF. The method further includes depositing a second metal material in the opening over the remaining first metal material.

Abstract: A method for three-dimensional printing for forming a three-dimensional structure on a moving platform is provided. The three-dimensional structure includes a shell portion and a foamy filling portion. The method includes the following: a digital shell model of the three-dimensional structure is built. Next, the digital shell model is sliced into a plurality of cross-section information. Next, a corresponding liquid forming material is cured on the moving platform according to the cross-section information to form a plurality of shell layers. Next, foaming process is performed on the liquid forming material to form a foamy forming material. Next, the foamy forming material located within the corresponding shell layers is cured to form a plurality of foamy filling layers. Afterward, the shell layers and the foamy filling layers are alternately formed on the moving platform and stacked to form the three-dimensional structure. A three-dimensional printing apparatus adopting the method is also provided.

Abstract: A method for partitioning a 3D printable model includes the steps of: establishing a standard build volume along three axes; accessing the 3D printable model and accessing a partitioning parameter upon determining that dimensions of the 3D printable model exceed the standard build volume; partitioning the 3D printable model into a plurality of 3D model segments based on the partitioning parameter; determining whether dimensions of each of the 3D model segments are greater than a threshold volume; adjusting the partitioning parameter when a result of the determination is negative; and forming engaging structures on cutting planes of adjacent two of the 3D model segments when the result of the determination is affirmative.

Abstract: An apparatus for prefetching data for a processor is presented. The apparatus may include a memory, a first counter, a second counter, and a control circuit. The memory may include a table with at least one entry in which the at least one entry may include an expected address of a next memory access and a next address from which to fetch data, wherein the next address is an offset value different from the expected address. The at least one entry may also include a maximum limit for the offset value. The first counter may increment responsive to an address of a memory access matching the expected address. The second counter may increment responsive to the address of the memory access resulting in a cache miss. The control circuitry may be configured to increment the maximum value of the offset value dependent upon a value of the second counter.

Abstract: An apparatus for prefetching data for a processor is presented. The apparatus may include a memory, a first counter, a second counter, and a control circuit. The memory may include a table with at least one entry in which the at least one entry may include an expected address of a next memory access and a next address from which to fetch data, wherein the next address is an offset value different from the expected address. The at least one entry may also include a maximum limit for the offset value. The first counter may increment responsive to an address of a memory access matching the expected address. The second counter may increment responsive to the address of the memory access resulting in a cache miss. The control circuitry may be configured to increment the maximum value of the offset value dependent upon a value of the second counter.

Abstract: A method of fabricating a metal gate electrode of a field effect transistor includes forming a dielectric layer over an active region, and forming an opening in the dielectric layer. The method further includes partially filling the opening with a high-dielectric-constant material, partially filling the opening with a conformal first metal material over the high-dielectric-constant material, and filling the opening with a capping layer over the first metal material. The method further includes partially removing the first metal material and capping layer in the opening using a wet etching process. The method further includes fully removing the remaining capping layer in the opening using a wet etching process. The method further includes depositing a second metal material in the opening over the remaining first metal material, and planarizing the second metal material.

Abstract: A semiconductor device with a metal gate is disclosed. An exemplary semiconductor device with a metal gate includes a semiconductor substrate, source and drain features on the semiconductor substrate, a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a HK dielectric layer formed over the semiconductor substrate, a plurality of barrier layers of a metal compound formed on top of the HK dielectric layer, wherein each of the barrier layers has a different chemical composition; and a stack of metals gate layers deposited over the plurality of barrier layers.

Abstract: A semiconductor device with a metal gate is disclosed. An exemplary semiconductor device with a metal gate includes a semiconductor substrate, source and drain features on the semiconductor substrate, a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a HK dielectric layer formed over the semiconductor substrate, a plurality of barrier layers of a metal compound formed on top of the HK dielectric layer, wherein each of the barrier layers has a different chemical composition; and a stack of metals gate layers deposited over the plurality of barrier layers.

Abstract: A device for the injection of CMP slurry used in chemical mechanical polishing includes a main body and an outputting member. The main body has an applying end and is configured to be driven to swing over a to-be-polished surface. The outputting member has a channel a plurality of spraying holes communicated with the channel. The channel extends along a central axis. The spraying holes are arranged on the outputting member along a route, and each of the spraying holes faces the to-be-polished surface. The outputting member is pivotally connected to the applying end, so that slurry flows in the channel and is delivered to the to-be-polished surface through the spraying holes. The device for the injection of CMP slurry can evenly distribute the slurry and properly control the slurry in terms of using amount, direction and coverage, and is easy to clean and maintain.

Abstract: A printed circuit board includes a first signal layer, a second signal layer, a third signal layer located between the first and second signal layers, a ground layer located between the second and third signal layers, first transmission line located on the first signal layer, a second transmission line located on the third layer, a via passing through the printed circuit board, and annular solders defined on the first, second, and third signal layers respectively and surrounding the via. The via is isolated from the ground layer and electronically coupled to the first and second transmission lines through the annular solder. A distance between the ground layer and the via is greater than a radius difference of the annular solder on the second signal layer.