Abstract: Exemplary methods, apparatuses, and systems include an adaptive pre-read manager for controlling pre-reads of the memory device. The adaptive pre-read manager receives a first set of data bits for programming to memory. The adaptive pre-read manager performing a first pass of programming including a first subset of data bits from the set of data bits. The adaptive pre-read manager compares a set of threshold operating differences to a set of differences between multiple operating conditions during the first pass of programming and current operating conditions. The adaptive pre-read manager performs an internal pre-read of the programmed first subset of data bits. The adaptive pre-read manager performs a second pass of programming using the internal pre-read and a second subset of data bits from the first set of data bits.

Abstract: A method includes receiving first data, determining a number of programming operations performed on a plurality of flash memory cells subsequent to a most recent erase operation performed on the plurality of flash memory cells, encoding the first data to provide a first write-once memory (WOM) encoded data, and storing the first WOM encoded data, based at least in part on the determined number of programming operations, within a number of the plurality of flash memory cells.

Abstract: Methods, apparatuses and systems related to maintaining stored data are described. The apparatus may be configured to refresh the stored data according to schedule that includes different delays between successive refresh operations.

Abstract: A power supply assembly is provided and includes a housing, a flexible circuit board, an insulator and a circuit board assembly. The housing includes a positioning base disposed on a carrying surface. The flexible circuit board is disposed on the carrying surface, extended from a first end side of the housing to the positioning base, and including a LED indicator adjacent to the first end side and an elastic conductor located on the positioning base. The flexible circuit board is sandwiched between the carrying surface and the insulator, and the elastic conductor protrudes through the insulator. The circuit board assembly includes a main circuit board having a conductive pad corresponding to the elastic conductor. The circuit board assembly is assembled to the insulator, the conductive pad is close to the insulator and abutted against the elastic conductor, so that the LED indicator and the main circuit board are electrically connected.

Abstract: A memory device includes a plurality of memory cells and control circuitry configured to operate in both a quad-level cell (QLC) mode and a triple-level cell (TLC) mode. The control circuity is configured to, to operate in the QLC mode, perform at least one of a QLC programming operation and a QLC read operation on one or more of the plurality of memory cells, to operate in the TLC mode, perform a TLC programming operation on one or more of the plurality of memory cells, and selectively switch between the QLC mode and the TLC mode.

Abstract: The application discloses a compilation method, a data processing method and an apparatus thereof. Data representing a first graph characterizing the operations of a first neural network is obtained. The data representing the first graph is processed to transform the first graph into a second graph. A set of instructions for characterizing the second graph is generated. The set of instructions is provided to one or more hardware platforms.

Abstract: The present disclosure provides an electronic device. The electronic device includes a substrate, an electronic component, a circuit structure, and a shielding layer. The electronic component is disposed under the substrate. The circuit structure is disposed under the substrate. The shielding layer is disposed under the substrate and covers the electronic component and connected to the circuit structure. The circuit structure and the shielding layer are collectively configured to block the electronic component from electromagnetic interference.

Abstract: A method includes receiving user data having a number of first bits. The method further includes encoding the user data by generating a number of second encoded bits having a first quantity of bits greater than that of the number of first bits. The number of second encoded bits can include one or more bits having a particular binary value and a quantity of the one or more bits is less than a threshold quantity. The method further includes writing the number of second encoded bits as the user data to a memory.

Abstract: An image processing device includes a three-dimensional noise reduction (3D NR) circuit, an artificial intelligence noise reduction (AI NR) circuit, a weight determination circuit and an image blending circuit. The 3D NR circuit performs a 3D NR operation on input image data to generate first image data. The AI NR circuit performs an AI NR operation on the input image data to generate second image data. The weight determination circuit outputs a blending weight according to a motion index. The image blending circuit blends the first image data and the second image data according to the blending weight to generate output image data.

Abstract: A processing device in a memory sub-system determines that an amount of host data in a first portion of a memory device configured as a program buffer satisfies a buffer threshold criterion and initiates an initial program pass of first host data from the program buffer to a second portion of the memory device configured as a primary memory. The processing device further determines that the first host data is to be evicted from the program buffer, and initiating a final program pass of the first host data from the program buffer to the primary memory.

Abstract: An apparatus is provided that includes a memory structure including non-volatile memory cells, a first processor and a second processor. The first processor is configured to provide a plurality of sets of commands to a second processor to perform memory operations on the non-volatile memory cells. The second processor is configured to execute the sets of commands and provide a control signal to the first processor. The first processor is further configured to provide the sets of commands to the second processor based on a status of the control signal. The second processor is further configured to control the status of the control signal so that the second processor executes sets of commands with no idle time between consecutive sets of commands.

Abstract: A method includes causing a read operation to be initiated with respect to a set of target cells. For each target cell, a respective group of adjacent cells is adjacent to the target cell. The method further includes obtaining, for each group of adjacent cells, respective cell state information, assigning, based on the cell state information, each target cell of the set of target cells to a respective state information bin, and determining a set of calibrated read level offsets. Each state information bin is associated with a respective group of target cells of the set of target cells, and each calibrated read level offset of the set of calibrated read level offsets is associated with a respective state information bin of the set of state information bins.

Abstract: An apparatus is provided that includes a memory structure including non-volatile memory cells, a first processor and a second processor. The first processor is configured to provide a plurality of sets of commands to a second processor to perform memory operations on the non-volatile memory cells. The second processor is configured to execute the sets of commands and provide a control signal to the first processor. The first processor is further configured to provide the sets of commands to the second processor based on a status of the control signal. The second processor is further configured to control the status of the control signal so that the second processor executes sets of commands with no idle time between consecutive sets of commands.

Abstract: A processing device, operatively coupled with a memory device, receives a request to perform a programming operation on a first set of cells addressable by a first wordline of a first die of the memory device. The processing device identifies a programming order associated with the first wordline. The processing device adjusts, based on the programming order, a biasing scheme associated with the first wordline. The processing device further performs, using the programming order and biasing scheme, the programming operation on the first set of cells addressable by the first wordline.

Abstract: Methods, apparatuses and systems related to maintaining stored data are described. The apparatus may be configured to refresh the stored data according to schedule that includes different delays between successive refresh operations.

Abstract: A memory device can include a memory array including memory cells arranged in one or more pages. The memory array can be coupled to control logic to receive a first request to write first data to a page of the one or more pages and program the first data to the page of the one or more pages at a first time responsive to receiving the first request. The control logic is further to receive a second request to write second data to the page of the one or more pages, read the page of the one or more pages, and program the second data to the page of the one or more pages at a second time responsive to receiving the second request. The control logic can also receive an erase request to erase the one or more pages after the second time.

Abstract: An execution method of a machine learning model, comprising: generating output and a begin of sentence (BoS) cache of a BoS token using the machine learning model before or after performing model quantization on the machine learning model to generate a quantized model; and executing inference based on the quantized model, and during the inference, input the next token following the BoS token as a first input token and the BoS cache into the quantized model to generate output and cache of the next token, wherein the next token is based on the output of the Bos token or based on an input content.

Abstract: A semiconductor fabrication method includes: forming an epitaxial stack including at least one sacrificial epitaxial layer and at least one channel epitaxial layer; forming a plurality of fins in the epitaxial stack; performing tuning operations to prevent a width of the sacrificial epitaxial layer expanding beyond a width of the channel epitaxial layer during operations to form isolation features; forming the isolation features between the plurality of fins, wherein the width of the sacrificial epitaxial layer does not expand beyond the width of the channel epitaxial layer; forming a sacrificial gate stack; forming gate sidewall spacers on sidewalls of the sacrificial gate stack; forming inner spacers around the sacrificial epitaxial layer and the channel epitaxial layer; forming source/drain features; removing the sacrificial gate stack and sacrificial epitaxial layer; and forming a replacement metal gate, wherein the metal gate is shielded from the source/drain features.

Abstract: Exemplary methods, apparatuses, and systems include a quick charge loss (QCL) mitigation manager for controlling writing data bits to a memory device. The QCL mitigation manager receives a first set of data bits for programming to memory. The QCL mitigation manager writes a first subset of data bits of the first set of data bits to a first memory block of the memory during a first pass of programming. The QCL mitigation manager writes a second subset of data bits of the first set of data bits to the first memory block during a second pass of programming in response to determining that the threshold delay is satisfied.

Abstract: A system can include a memory device and a processing device, operatively coupled with the memory device, to perform operations including storing a set of user data and multiple portions of error correction data. The operations can also include, responsive to an expiration of a first threshold amount of time after storing the set of user data, performing, using the third portion of the error correction data, a first error correction operation, on each of the set of user data, the first portion, and the second portion, and rewriting, on the memory device, the set of user data, the first portion, and the second portion. The operations can further include deleting the third portion.