Abstract: The present disclosure provides an apparatus for a lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame including a material selected from the group consisting of boron nitride (BN), boron carbide (BC), and a combination thereof, a mask, a first adhesive layer that secures the pellicle membrane to the pellicle frame, and a second adhesive layer that secures the pellicle frame to the mask.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Ir based material, a Pt based material or a Ru based material.

Abstract: The present invention discloses an analog to digital conversion (ADC) apparatus having quick conversion mechanism. Each of ADC circuits receives a previous higher-bit conversion result to perform prediction to generate a current higher-bit conversion result, performs conversion on an input analog signal according to a sampling clock that has a frequency at least twice of the frequency of the input analog signal based on a successive-approximation mechanism to generate a current lower-bit conversion result, and combines the current higher-bits and current lower-bit conversion results to generate a current conversion result and output a remained signal amount as a residue. A noise-shaping circuit performs calculation based on the residue to generate a noise-shaping reference signal. Each of the ADC circuits combines the current conversion result and the noise-shaping reference signal to generate an output digital signal.

Abstract: Example camera and hub arrangements are presented herein. An example device includes an Ethernet connector configured to provide power and data, a camera port configured to provide power and data to a camera module, and an audio port configured to provide power and data to at least one audio input/output module. The device also includes a processor configured to determine one or more camera parameters for the camera module attached to the camera port, such as a type of a camera module attached to the camera port. The device can change operation mode based on camera parameters and audio parameters associated with connected camera modules and audio modules. Different modules can be connected to the device and located remotely from the device.

Abstract: A pellicle frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle. The pellicle frame further includes a bottom surface of the frame defines only a single recess therein. The pellicle frame further includes a gasket configured to fit within the single recess.

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

Abstract: A speech processing method and apparatus, a computer storage medium, and an electronic device, relating to the technical field of speech processing. The speech processing method includes: acquiring a speech sequence, obtaining a plurality of speech sub-sequences by performing framing processing on the speech sequence, and extracting a target feature of each speech sub-sequence of the plurality of speech sub-sequences; detecting each speech sub-sequence of the plurality of speech sub-sequences by a speech detection model according to each target feature, and determining valid speech based on a detection result; inputting a target feature corresponding to the valid speech into a voiceprint recognition model, and screening out target speech from the valid speech by the voiceprint recognition model; and controlling the target speech to be forwarded to a client.

Abstract: A pellicle for a reflective photo mask includes a frame, a core layer having a front surface and a rear surface, and disposed over the frame, a first capping layer disposed on the front surface of the core layer, an anti-reflection layer disposed on the first capping layer, a barrier layer disposed on the anti-reflection layer, and a heat emissive layer disposed on the barrier layer.

Abstract: A motor rotor is provided, comprising: a rotor core, comprising a plurality of metal parts and an inner hole of the rotor, the inner hole of the rotor passing through the rotor core, and the metal parts constituting a rotor metal total area ?Ametal; and a plurality of reluctance parts, disposed surrounding the inner hole of the rotor, each of the reluctance parts comprising at least one flux barrier, at least one of the flux barriers penetrating the rotor core, and the at least one of the flux barriers in each of the reluctance parts constituting a flux barrier total area ?Aair; wherein, the sum of ?Aair and ?Ametal being a rotor effective total area, and the ratio of ?Aair to the rotor effective total area being a flux barrier ratio KA, expressed as KA=?Aair/?Aair+?Ametal, and the flux barrier ratio KA satisfying the following relation: 0.25?KA?0.5.

Abstract: A pellicle for an EUV photo mask includes a first capping layer, a matrix layer disposed over the first capping layer, a second capping layer disposed over the matrix layer; and a metallic layer disposed over the second capping layer.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 µm and about 500 µm. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (Tg) greater than room temperature.

Abstract: A method of manufacturing an extreme ultraviolet mask, including forming a multilayer Mo/Si stack including alternating Mo and Si layers over a first major surface of a mask substrate, and forming a capping layer over the multilayer Mo/Si stack. An absorber layer is formed on the capping layer, and a hard mask layer is formed over the absorber layer. The hard mask layer is patterned to form a hard mask layer pattern. The hard mask layer pattern is extended into the absorber layer to expose the capping layer and form a mask pattern. A border pattern is formed around the mask pattern. The border pattern is extended through the multilayer Mo/Si stack to expose the mask substrate and form a trench surrounding the mask pattern. A passivation layer is formed along sidewalls of the trench.

Abstract: A method of manufacturing an extreme ultraviolet mask, including forming a multilayer Mo/Si stack including alternating Mo and Si layers over a first major surface of a mask substrate, and forming a capping layer over the multilayer Mo/Si stack. An absorber layer is formed on the capping layer, and a hard mask layer is formed over the absorber layer. The hard mask layer is patterned to form a hard mask layer pattern. The hard mask layer pattern is extended into the absorber layer to expose the capping layer and form a mask pattern. A border pattern is formed around the mask pattern. The border pattern is extended through the multilayer Mo/Si stack to expose the mask substrate and form a trench surrounding the mask pattern. A passivation layer is formed along sidewalls of the trench.

Abstract: A pellicle for an EUV photo mask includes a first capping layer, a matrix layer disposed over the first capping layer, a second capping layer disposed over the matrix layer; and a metallic layer disposed over the second capping layer.

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 ?m and about 500 ?m. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (Tg) greater than room temperature.

Abstract: A method for treating polymer particles is disclosed. Polymer particles and a liquid are provided. The method includes the following steps (a) and (b). (a) Mixing said polymer particles with said carrier liquid to form a dispersion of said particles in said carrier liquid at a concentration of at least 0.1 g/L, based on the volume of the dispersion. (b) Subjecting the dispersion to microfluidization treatment thereby causing particle stretching, particle size reduction and increasing the surface area per unit mass of the polymer particles. Also disclosed is a particulate composition comprising polymer particles mixed with nanoplates derived from a layered material, wherein the particulate composition has a BET surface area of at least 10 m2/g. Furthermore, there is disclosed a method for the manufacture of a component formed of a composite of a polymer with a dispersion of nanoplates. The particulate composition is provided as a precursor particulate.

Abstract: A method of forming an extreme ultraviolet (EUV) mask including forming a multilayer stack comprising alternating stacked Mo-containing layer and Si-containing layer over a mask substrate, forming a first nitride layer over the multilayer stack forming a capping layer over the multilayer stack, forming an absorber layer over the capping layer, and etching the absorber layer to form a pattern in the absorber layer.

Abstract: A method, system, and computer program product for protecting API KEYs for accessing services in a cloud environment are disclosed. A first request for generating a virtual key for a user in an organization to access a service in a cloud environment is received. The first request includes information of the organization, an identity of the user, and information of the service. A first authentication request is sent to an identity provider of the organization based on the information of the organization and the identity of the user. In response to the first authentication being successful, an API key for the organization to access the service is determined. The virtual key for the user to access the service is generated based on the API key, the information of the organization, and the identity of the user. The virtual key is returned as a response of the first request.