Abstract: The present disclosure provides an apparatus for a semiconductor lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a porous pellicle frame, a mask with a patterned surface, a first thermal conductive adhesive layer that secures the pellicle membrane to the porous pellicle frame, and a second thermal conductive adhesive layer that secures the porous pellicle frame to the mask.

Abstract: A flexible container includes a tray made of silica gel. The tray is integrally formed with at least one placement cavity with an opening at its top portion. A peripheral flange extends outward from a peripheral edge of the tray. The peripheral flange continuously surrounds the peripheral edge of the tray, and the peripheral flange is embedded with a reinforcing ring. A cross-section of the reinforcing ring has a longitudinal length greater than a lateral length. The invention adopts the reinforcing ring with its cross-section having the longitudinal length greater than the lateral length as a frame reinforcing element, and the reinforcing ring is embedded in the peripheral flange extending outwardly from the edge of the tray.

Abstract: Disclosed is a preparation method of a nanometer metal oxide supported carrier based on anodic oxidation, comprising: Step 1: adding electrolyte to a reaction pool, and fixing the cathode and the anode oppositely, wherein the cathode is a metal plate that is identical to the nano-metal oxide, and the anode is a carrier metal material; Step 2: stirring the electrolyte at a constant speed, wherein the revolution speed is not lower than 500 rpm; Step 3: switching power on; setting the output voltage between 10v and 50v; and subjecting the metal plate of the anode to anodic oxidation reaction, wherein metal oxide nanotubes/nano particles are generated on the surface; under the action of stirring, the metal oxide nanotubes/nano particles on the anode surface are dissolved and shed off into the electrolyte; under the action of the electric field force, the dissolved and shed-off nano fragments migrate towards the cathode and are adhered to the surface of the cathode material, thereby forming a nano-metal oxide film

Abstract: A pellicle for an EUV photo mask includes a base membrane layer, a core layer disposed over the base membrane layer and one or more metallic layers disposed over the core layer.

Abstract: A pellicle includes a frame configured to attach to a photomask, wherein the frame includes a vent hole. The pellicle further includes a filter covering the vent hole, wherein the filter directly connects to an outer surface of the frame. The pellicle further includes a membrane extending over a top surface of the frame. The pellicle further includes a mount between the frame and the membrane, wherein the mount is attachable to the frame by an adhesive.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Ir based material, a Pt based material or a Ru based material.

Abstract: A method for forming a structure of a pellicle-mask structure is provided. The method includes bonding a pellicle frame to a mask through a pellicle frame adhesive. The method also includes forming a vent structure in the pellicle frame. The method further includes bonding a pellicle membrane to the pellicle frame through a pellicle membrane adhesive. A first size of the pellicle membrane adhesive is greater than a second size of the pellicle frame adhesive.

Abstract: A method of manufacturing a phase shift mask includes forming a doped silicon nitride layer on a mask substrate and forming an opaque layer on the doped silicon nitride layer. The opaque layer and doped silicon nitride layer are then patterned to expose portions of the mask substrate to form a plurality of mask features comprising the opaque layer disposed on the doped silicon nitride layer. Portions of the opaque layer are then removed from some of the mask features.

Abstract: A pellicle for an EUV photo mask includes a first capping layer, a matrix layer disposed over the first capping layer, a second capping layer disposed over the matrix layer; and a metallic layer disposed over the second capping layer.

Abstract: A pellicle for an EUV photo mask includes a base membrane layer, a core layer disposed over the base membrane layer and one or more metallic layers disposed over the core layer.

Abstract: A method of removing a pellicle from a photomask includes removing a portion of a membrane from a pellicle frame, wherein the pellicle frame remains attached to the photomask following the removing of the portion of the membrane. The method further includes removing the pellicle frame from the photomask. The method further includes cleaning the photomask.

Abstract: A method of forming a mask includes forming a reflective multilayer over a substrate; forming a capping layer over the reflective multilayer, in which the capping layer includes a ruthenium-containing material and a low carbon solubility material that has a carbon solubility lower than a carbon solubility of the ruthenium-containing material; forming an absorption layer over the capping layer; and etching the absorption layer until exposing the capping layer.

Abstract: A method of performing a lithography process includes receiving a lithography mask and performing overlay measurement. The lithography mask includes a substrate that contains a low thermal expansion material (LTEM); a reflective structure over a first side of the substrate; an absorber layer over the reflective structure and containing one or more first overlay marks; and a conductive layer over a second side of the substrate and containing one or more second overlay marks. The second side is opposite the first side. The overlay measurement includes using the one or more first overlay marks in an extreme ultraviolet (EUV) lithography process or using the one or more second overlay marks in a non-EUV lithography process.

Abstract: A method and system for obtaining wire information, includes a RFID tag, a RFID reader, and a data center. The RFID tact obtains the sensing information of the wire and transmits the sensing information and identification information of the RFID tag. The RFID reader transmits high-frequency electromagnetic waves to trigger the RFID tact and transmits and receives sensing information and identification information sent by the RFID tag. The data center is communicatively connected with the RFID reader and determines the type of the received sensing information based on the received sensing information and identification information for data analysis.

Abstract: A wafer includes a first face having a first center, and a second face having a second center. The first and second centers are each arranged on a central axis, which passes through the first face and the second face. The first face and the second face adjoin one another at a circumferential edge. An alignment notch is disposed along the circumferential edge, and extends inwardly from the circumferential edge by an alignment notch radial distance. The alignment notch radial distance is less than a wafer radius as measured from the first center to the circumferential edge. A die region includes an array of die arranged in rows and columns and is circumferentially bounded by a die-less region which is devoid of die. A first identification mark including a string of characters is disposed entirely in the die-less region to a first side of the alignment notch.

Abstract: Structures of a pellicle-mask structure are provided. The pellicle-mask structure includes a mask substrate, a pellicle frame over the mask substrate. The pellicle frame includes a side portion with an inside surface and an outside surface opposite to each other. The pellicle-mask structure also includes a vent structure in the side portion and connecting the inside surface and the outside surface, and a pellicle membrane over the pellicle frame. The pellicle-mask structure further includes a pellicle membrane adhesive between the pellicle membrane and the pellicle frame, and a first heat-dissipating filler in the pellicle membrane adhesive.

Abstract: A reticle and a method for manufacturing a reticle are provided. The method includes forming a reflective multilayer (ML) over a front-side surface of a mask substrate. The method further includes forming a capping layer over the reflective ML. The method further includes forming a sacrificial multilayer over the capping layer. The method further includes forming an opening in the sacrificial multilayer to expose the capping layer. The method further includes forming a first absorption layer over the sacrificial multilayer and covering the capping layer in the opening. The method further includes removing the first absorption layer outside the opening in the sacrificial multilayer to form a first absorption pattern on a portion of the capping layer.

Abstract: A method of manufacturing an extreme ultraviolet mask, including forming a multilayer Mo/Si stack including alternating Mo and Si layers over a first major surface of a mask substrate, and forming a capping layer over the multilayer Mo/Si stack. An absorber layer is formed on the capping layer, and a hard mask layer is formed over the absorber layer. The hard mask layer is patterned to form a hard mask layer pattern. The hard mask layer pattern is extended into the absorber layer to expose the capping layer and form a mask pattern. A border pattern is formed around the mask pattern. The border pattern is extended through the multilayer Mo/Si stack to expose the mask substrate and form a trench surrounding the mask pattern. A passivation layer is formed along sidewalls of the trench.

Abstract: A reticle structure includes a reticle having patterned features and a first border section enclosing the patterned features. The reticle structure includes a membrane having a middle section a second border section enclosing the middle section. The reticle structure includes a frame disposed between the membrane and the reticle to mount the membrane over the patterned features of the reticle. The frame creates an enclosure between the reticle and the membrane and encircles the patterned features of the reticle. The frame includes a plurality of holes and the plurality of holes produces a threshold percentage of opening in the frame to maintain an equalized pressure difference between the enclosure and outside the enclosure below a threshold pressure.

Abstract: A cathode (100) for use in a lithium-air battery can include a polymer binder (150) having a conductive material (120), phyllosilicate nanoparticles (110), a lithium salt (130), and a metal catalyst (140) distributed in the polymer binder (150). The cathode (100) can be porous to allow oxygen to diffuse from surrounding air into the cathode (100). A lithium-air battery can include a lithium metal anode, a solid electrolyte in contact with the lithium metal anode, and a cathode (100) in contact with the solid electrolyte. The cathode (100) can have a polymer binder (150) as a support matrix. The polymer binder (150) can be porous to allow oxygen to diffuse from surrounding air into the cathode (100). The cathode (100) can include the polymer binder (150), a conductive material (120), phyllosilicate nanoparticles (110), a lithium salt (130), and a metal catalyst (140) distributed in the polymer binder (150).