Abstract: Systems and methods for classifying and mitigating security threats in a digital communication network are provided. A digital communication that has been identified as suspicious may be parsed to identify various content indicators contained in the communication. Processing may then be performed on the digital communication to determine if the digital communication comprises malicious content. Mitigation activities may be performed when malicious content is identified.

Abstract: A method of operating an analog-to-digital converter includes in a first sampling stage, switching a swap signal to a first level for a first selection circuit to reset a first capacitor array according to a first voltage configuration and for a second selection circuit to reset a second capacitor array according to the first voltage configuration, and in a second sampling stage, switching the swap signal to a second level for the first selection circuit to reset the first capacitor array according to the second voltage configuration and for the second selection circuit to reset the second capacitor array according to the second voltage configuration. A control logic circuit is used to switch the swap signal between the first level and the second level in a uniform order in a plurality of sampling stages.

Abstract: Systems and methods for ingesting and enhancing data in a distributed processing framework. The system includes at least a data ingestion system configured to access data or datasets from one or more data sources. The data is accessed via the data ingestion system and includes metadata defining a plurality of attributes. The attributes are identified in the metadata, via the data ingestion system, and may be applied to the data or dataset for enhancing the data or dataset. Application of the attributes to the data results in enhancements that may include joining the data, enriching the data, or other enhancements accomplished via manipulation of the data via the data ingestion system.

Abstract: A mask for extreme ultraviolet (EUV) lithography includes a multilayer (ML) stack including alternating metal and semiconductor layers disposed over a first surface of a mask substrate, a capping layer disposed over the ML stack, and an absorber layer disposed over the capping layer. An image pattern is formed in the absorber layer. A border layer surrounding the image pattern is disposed over the absorber layer.

Abstract: The present invention discloses an analog to digital conversion (ADC) apparatus having quick conversion mechanism. Each of ADC circuits receives a previous higher-bit conversion result to perform prediction to generate a current higher-bit conversion result, performs conversion on an input analog signal according to a sampling clock that has a frequency at least twice of the frequency of the input analog signal based on a successive-approximation mechanism to generate a current lower-bit conversion result, and combines the current higher-bits and current lower-bit conversion results to generate a current conversion result and output a remained signal amount as a residue. A noise-shaping circuit performs calculation based on the residue to generate a noise-shaping reference signal. Each of the ADC circuits combines the current conversion result and the noise-shaping reference signal to generate an output digital signal.

Abstract: A method of operating an analog-to-digital converter includes in a first sampling stage, switching a swap signal to a first level for a first selection circuit to reset a first capacitor array according to a first voltage configuration and for a second selection circuit to reset a second capacitor array according to the first voltage configuration, and in a second sampling stage, switching the swap signal to a second level for the first selection circuit to reset the first capacitor array according to the second voltage configuration and for the second selection circuit to reset the second capacitor array according to the second voltage configuration. A control logic circuit is used to switch the swap signal between the first level and the second level in a uniform order in a plurality of sampling stages.

Abstract: A method of forming an extreme ultraviolet (EUV) mask including forming a multilayer stack comprising alternating stacked Mo-containing layer and Si-containing layer over a mask substrate, forming a first nitride layer over the multilayer stack forming a capping layer over the multilayer stack, forming an absorber layer over the capping layer, and etching the absorber layer to form a pattern in the absorber layer.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 ?m and about 500 ?m. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (Tg) greater than room temperature.

Abstract: A first capping layer is deposited over a substrate. A network of nanowires is grown over the first capping layer. A second capping layer is deposited over the network of nanowires. The substrate is etched to form a frame of a pellicle. The first capping layer and the second capping layer are patterned to form a membrane of the pellicle, wherein the patterning reduces a material of the first capping layer and the second capping layer to form a coating on the nanowires.

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

Abstract: A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.

Abstract: A mask for extreme ultraviolet (EUV) lithography includes a multilayer (ML) stack including alternating metal and semiconductor layers disposed over a first surface of a mask substrate, a capping layer disposed over the ML stack, and an absorber layer disposed over the capping layer. An image pattern is formed in the absorber layer. A border layer surrounding the image pattern is disposed over the absorber layer.

Abstract: The present disclosure provides an apparatus for a lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame including a material selected from the group consisting of boron nitride (BN), boron carbide (BC), and a combination thereof, a mask, a first adhesive layer that secures the pellicle membrane to the pellicle frame, and a second adhesive layer that secures the pellicle frame to the mask.

Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.

Abstract: Disclosed is a preparation method of a nanometer metal oxide supported carrier based on anodic oxidation, comprising: Step 1: adding electrolyte to a reaction pool, and fixing the cathode and the anode oppositely, wherein the cathode is a metal plate that is identical to the nano-metal oxide, and the anode is a carrier metal material; Step 2: stirring the electrolyte at a constant speed, wherein the revolution speed is not lower than 500 rpm; Step 3: switching power on; setting the output voltage between 10 v and 50 v; and subjecting the metal plate of the anode to anodic oxidation reaction, wherein metal oxide nanotubes/nano particles are generated on the surface; under the action of stirring, the metal oxide nanotubes/nano particles on the anode surface are dissolved and shed off into the electrolyte; under the action of the electric field force, the dissolved and shed-off nano fragments migrate towards the cathode and are adhered to the surface of the cathode material, thereby forming a nano-metal oxide fi

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

Abstract: A method and a measuring apparatus for measuring noise of a device under test (DUT) is provided, wherein the DUT is connected to a link partner (LP) device via a cable, and the measuring apparatus is coupled to the DUT and LP device. The method includes: controlling the LP device to transmit a far-end data sequence to the DUT according to transmission data; controlling the DUT to recover the transmission data for generating aided-data sequence according to the transmission data, wherein the aided-data sequence is configured to perform cancellation with a received far-end data sequence to generate a cancellation result; generating a first noise value and a second noise value in a first training phase and a second training phase, respectively; and estimating noise from at least one circuit according to the first noise value and the second noise value.

Abstract: A method and system for obtaining wire information, includes a RFID tag, a RFID reader, and a data center. The RFID tact obtains the sensing information of the wire and transmits the sensing information and identification information of the RFID tag. The RFID reader transmits high-frequency electromagnetic waves to trigger the RFID tact and transmits and receives sensing information and identification information sent by the RFID tag. The data center is communicatively connected with the RFID reader and determines the type of the received sensing information based on the received sensing information and identification information for data analysis.

Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.

Abstract: A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.