Abstract: The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 ?m, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof.

Abstract: A straight tube type Coriolis flowmeter (21) is equipped with a straight-tube-type flow tube (3), a drive device (7) for driving by a tertiary mode vibration, a pair of detection unit (8) for detecting a phase difference proportional to a Coriolis force, a pedestal (22) having rigidity, and elastic connection members (23) having elasticity. Assuming that an axial direction of the flow tube (3) is a Z-axis, that a driving direction of the drive device (7) is an X-axis, and that a direction orthogonal to the Z-axis and the X-axis is a Y-axis, the elastic connection members (23) are of a structure exhibiting lower rigidity in the Z-axis direction than in the X-axis direction and the Y-axis direction, and exhibiting lower rigidity in a direction of rotation around the Y-axis than in a direction of rotation around the Z-axis and a direction of rotation around the X-axis.

Abstract: A semiconductor device according to the present invention includes: a first interlayer dielectric film; a lower wire formed on the first interlayer dielectric film; a second interlayer dielectric film formed on the first interlayer dielectric film and the lower wire; and an upper wire formed on the second interlayer dielectric film to intersect with a prescribed portion of the lower wire in plan view. The first interlayer dielectric film is provided with a groove dug from the upper surface thereof in a region including the prescribed portion in plan view. The prescribed portion enters the groove. At least a portion of the second interlayer dielectric film formed on the lower wire has a planar upper surface.

Abstract: A semiconductor device according to the present invention includes: a semiconductor layer made of silicon; a trench formed by digging in from a top surface of the semiconductor layer; a gate insulating film formed on an inner wall surface of the trench and made of silicon oxide; a gate electrode embedded in the trench via the gate insulating film and made of a polysilicon doped with an impurity; and an oxidation-resistant metal film disposed on a top surface of the gate electrode and covering the top surface.

Abstract: A Coriolis flow meter (11) with a vibrating direction restriction means includes flow tubes (13, 13), a drive means (14) for driving the flow tubes (13, 13), and phase difference detection means (15, 15) for detecting a phase difference in proportion to a Coriolis force. The Coriolis flow meter further includes plate springs (16, 16) functioning as vibrating direction restriction means, and a flow tube fixing member (17) also functioning as a vibrating direction restriction means and serving to fix the flow tubes (13, 13) in position.

Abstract: A tertiary mode vibration type Coriolis flowmeter (1), comprising a flow tube (3), a drive device (4) driving the flow tube (3), and a pair of vibration detection sensors (5) detecting a phase difference in proportion to a Coriolis force acting on the flow tube (3). The drive device (4) drives the flow tube (3) by bending vibration in a tertiary mode. The flow tube (3) further comprises an approximately loop-shaped body part (12). A pair of parallel leg parts (14) and (14) deflected in a direction approximately orthogonal to the vibrating direction of both end parts (13) and (13) of the body part (12), namely, to the outside of the both end parts (13) and (13) are formed continuously with the both end parts (13) and (13) of the body part (12). Fixed end parts (16) and (16) supporting the flow tube (3) are formed at the leg parts (14) and (14).

Abstract: A semiconductor device according to the present invention has a multilayer wiring structure laminating and disposing a plurality of with sandwiching an insulating film and includes: a copper wire having copper as a main component; an insulating film formed on the copper wire; an aluminum wire having aluminum as a main component and formed on the insulating film to be electrically connected to the copper wire via a via hole formed to penetrate through the insulating film; and a surface protective film formed on the aluminum wire; and the surface protective film formed with a pad opening exposing a portion of the aluminum wire as an electrode pad for electrical connection with an external portion.

Abstract: A semiconductor device according to the present invention includes: a lower wire having copper as a main component; an insulating film formed on the lower wire; an upper wire formed on the insulating film; a tungsten plug penetrating through the insulating film and formed of tungsten for electrically connecting the lower wire and the upper wire; and a barrier layer interposed between the lower wire and the tungsten plug; and the barrier layer including a tantalum film contacting the lower wire and a titanium nitride film contacting the tungsten plug.

Abstract: In order that a flow tube of a Coriolis flowmeter may be vibrated in a tertiary mode using one drive device, the drive device is arranged at an antinode in the center of tertiary mode vibration, and vibration detecting sensors are arranged at two antinodes other than the antinode in the center of tertiary mode vibration. Moreover, the displacement polarity of the drive device is opposite to that of the vibration detecting sensors so that the vibration phases of the flow tube are in a relation of mutually opposite phases. Furthermore, in a positive feedback loop of an excitation circuit portion for exciting tertiary mode vibration of the flow tube and the vibration detecting sensors , the excitation circuit portion is structured so that the relation between the displacement polarities where the vibration phases of the flow tube are opposite to one another is converted to the relation where the vibration phases of the flow tube are in phase.

Abstract: A start tube section (27) of a first bent tube (31) has a first parallel subsection (27a) substantially parallel to a start tube section (28) of a second bent tube (32) or to a continuous section (35) between a return tube section (29) of the first bent tube (31) and the start tube section (28) of the second bent tube (32), a first bent subsection (27b) continuous with the first parallel subsection (27a), and a first start tube section body subsection (27c) extending gradually away from the start tube section (28) of the second bent tube (32) due to presence of the first bent subsection (27b).

Abstract: The semiconductor device according to the present invention includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer.

Abstract: A first inlet portion, a second inlet portion, a first outlet portion, and a second outlet portion are fixed to a fixing member, and a connecting tube portion is provided between the first outlet portion and the second inlet portion. Further, the first inlet portion and the second inlet portion are fixed so as to be in a non-parallel state such that the distance between the two increases as they depart from the fixing member, and the first outlet portion and the second outlet portion are similarly arranged in a non-parallel state. The first and second inlet portions and the first and second outlet portions are fixed so as to be arranged symmetrically. Further, the first outlet portion, the second inlet portion, and the connecting tube portion are arranged such that their tube axes are in a straight line. Further, the distance between driven portions is made small.

Abstract: The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the lower electrode through the capacitance film, and having an outline smaller than that of the lower electrode in plan view along the opposed direction, and a protective film made of the same material as that of the capacitance film and laminated on the upper electrode.

Abstract: In order that a flow tube (3) of a Coriolis flowmeter (1) may be vibrated in the tertiary mode using one drive device (4), the drive device (4) is arranged at the antinode (H2) in the center of tertiary mode vibration, and vibration detecting sensors (5, 5) are arranged at two antinodes (H1, H3) other than the antinode (H2) in the center of tertiary mode vibration. Furthermore, the displacement polarity of the drive device (4) is opposite to those of the vibration detecting sensors (5, 5) so that the vibration phases of the flow tube (3) are in a relation of mutually opposite phases.

Abstract: A start tube section (27) of a first bent tube (31) has a first parallel subsection (27a) substantially parallel to a start tube section (28) of a second bent tube (32) or to a continuous section (35) between a return tube section (29) of the first bent tube (31) and the start tube section (28) of the second bent tube (32), a first bent subsection (27b) continuous with the first parallel subsection (27a), and a first start tube section body subsection (27c) extending gradually away from the start tube section (28) of the second bent tube (32) due to presence of the first bent subsection (27b).

Abstract: In a method of manufacturing a semiconductor device according to the present invention, a wiring trench is formed on the surface of an insulating film, and the inner surface of this wiring trench is thereafter coated with an alloy film made of an alloy material containing copper and a prescribed metallic element. After this coating with the alloy film, a copper film is laminated on the insulating film to fill up the wiring trench. Then, unnecessary portions of the copper film outside the wiring trench are removed, so that the surface of the copper film remaining in the wiring trench is generally flush with the surface of the insulating film. Thereafter heat treatment is performed. The prescribed metallic element is deposited on the wiring trench due to this heat treatment. Then, the prescribed metallic element deposited on the wiring trench is removed.

Abstract: A first inlet portion (4), a second inlet portion (6), a first outlet portion (5), and a second outlet portion (7) are fixed to a fixing member (8), and a connecting tube portion (9) is provided between the first outlet portion (5) and the second inlet portion (6). Further, the first inlet portion (4) and the second inlet portion (6) are fixed so as to be in a non-parallel state such that the distance between the two increases as they depart from the fixing member (8), and the first outlet portion (5) and the second outlet portion (7) are similarly arranged in a non-parallel state, the first and second inlet portions (4) and (6) and the first and second outlet portions (5) and (7) being fixed so as to be arranged symmetrically. Further, the first outlet portion (5), the second inlet portion (6), and the connecting tube portion (9) are arranged such that their tube axes are in a straight line. Further, the distance between driven portions (10) is made small.

Abstract: A first inlet portion 4, a second inlet portion 6, a first outlet portion 5, and a second outlet portion 7 are fixed to a fixing member 8, and a connecting tube portion 9 is provided between the first outlet portion 5 and the second inlet portion 6. Further, the first inlet portion 4 and the second inlet portion 6 are arranged in a non-parallel state such that the distance between the two increases as they depart from the fixing member 8, and the first outlet portion 5 and the second outlet portion 7 are similarly arranged in a non-parallel state, the first inlet portion 4 and the second inlet portion 6 and the first outlet portion 5 and the second outlet portion 7 being arranged symmetrically. Further, the first outlet portion 5, the second inlet portion 6, and the connecting tube portion 9 are arranged such that their three tube axes are in a straight line.

Abstract: The Coriolis mass flow meter of this invention comprises two parallel curved flow tubes 1 and 2, a drive unit 15, and a pair of vibration sensors 16 and 17. An inlet-side manifold 24 dividing the flow of a fluid being measured into the two flow tubes 1 and 2 from the inlet thereof, and an outlet-side manifold 25 joining the fluid flows flowing in the two flow tubes 1 and 2 to discharge from the fluid outlet thereof are mechanically connected to a meter body 30 only at the inlet side of the inlet-side manifold 24 and at the outlet side of the outlet-side manifold 25, respectively. With this arrangement, the effects of vibration transmitted from the meter body 30 and all structures connected thereto can be reduced at the joint parts between the inlet-side and outlet-side manifolds 24 and 25 that serve as vibration fulcrums.

Abstract: Two flow tubes 1 and 2 of a Coriolis mass flow meter are formed into an arch shape, with the tubes bent in only one direction. Entry-side and exit-side manifolds 25 are smoothly bent from the inlet of the entry-side manifold and the outlet of the exit-side manifold to joints connecting the two flow tubes to the manifolds, and connected to the flow tubes 1 and 2 at the joints at a predetermined angle in the same direction. By making the flow tubes into a parallel arched tube structure having good stress distribution and shock resistance, effects on the flow meter of external oscillations, installation conditions, piping stresses and thermal stresses can be reduced.