Abstract: Provided is a method of producing a circuit board of which the aperture ratio is increased. The method of producing a circuit board of the present invention is a method of producing a circuit board that includes a thin film transistor, the thin film transistor including an oxide semiconductor layer, the method including steps of: forming the oxide semiconductor layer; and converting the oxide semiconductor layer into a conductive form.

Abstract: A method for fabricating a display device includes the steps of forming a multilayer structure in which a first conducting film and a second conducting film are stacked in this order, removing part of the second conducting film and forming a contact region in which the first conducting film does not overlap with the second conducting film, thereby forming the electrode portion from the multilayer structure, forming a planarized film made of a photosensitive material on the substrate on which the electrode portion is formed to cover the electrode portion, thereby forming a contact hole located inside the contact region and passing through the planarized film, and forming a pixel electrode on a surface of the planarized film to cover part of the first conducting film located inside the contact hole and exposed from the planarized film.

Abstract: The present invention provides a highly reliable circuit board that includes TFTs a semiconductor layer of which is formed from an oxide semiconductor; and low-resistance aluminum wirings. The circuit board of the present invention includes an oxide semiconductor layer; source wirings; and drain wirings, wherein each of the source wirings and the drain wirings includes a portion in contact with the semiconductor layer, portions of the source wirings in contact with the semiconductor layer and respective portions of the drain wirings in contact with the semiconductor layer spacedly facing each other, and the source wirings and the drain wirings are formed by stacking a layer formed from a metal other than aluminum and a layer containing aluminum.

Abstract: Disclosed is a liquid crystal display device having a transparent substrate that has a main surface including a pixel arrangement region and a peripheral region, a switching element that is formed in the pixel arrangement region, an interlayer insulating film that is formed on the main surface of the transparent substrate, a wiring line that is formed such that an end is exposed from the interlayer insulating film, and a transparent conductive film that is formed so as to reach the wiring line from the main surface of the transparent substrate. An anisotropic conductive film is disposed on an upper surface of the transparent conductive film that is located on the main surface of the transparent substrate.

Abstract: An active matrix substrate (30) of the present invention includes (i) a plurality of TFT elements (2) provided on an insulating substrate (10), and (ii) pixel electrodes (7) electrically connected to the plurality of TFT elements (2), respectively. The pixel electrodes (7) has (i) a first transparent electrode layer (7a), (ii) a reflective electrode layer (7b) stacked on the first transparent electrode layer (7a), which reflective electrode layer (7b) has a smaller area than that of the first transparent electrode layer (7a), and (iii) a second transparent electrode layer (7c) stacked so as to cover at least the reflective electrode layer (7b). Hence, it is possible to realize a transflective liquid crystal display device which suppresses occurrence of a flicker, thereby having high display quality.

Abstract: The present invention provides a liquid crystal display device and a method for manufacturing the same that can improve aperture ratio of pixels while securing necessary storage capacitance using a simple configuration even if there is progress in high resolution of pixels. The liquid crystal display device according to the present invention is provided with a plurality of pixels. A thin film transistor array substrate includes gate lines and source lines arranged in a grid pattern on a principal surface of a supporting substrate, transparent pixel electrodes, and thin film transistors. Also, the thin film transistor array substrate includes a gate insulator, a passivation layer, a transparent conductive film, a first insulation layer, and transparent pixel electrodes stacked in order from a supporting substrate side. The transparent pixel electrodes are electrically connected with drain electrodes of the thin film transistors through contact holes formed in the first insulation layer.

Abstract: A pad section 112 of a liquid crystal display device and a main surface of a substrate located in a periphery of the pad section 112 are formed so as to be exposed from a multilayer film 109. The pad section 112 is formed of an aluminum alloy material film, and the difference between a potential of the aluminum alloy material film and that of an ITO film is smaller than the difference between a potential of an aluminum film and that of the ITO film.

Abstract: At least one of a drain electrode, a source electrode and a gate electrode includes an aluminum alloy material film. The aluminum alloy material film includes aluminum as a base material, an alloy component containing at least one type of element selected from the group consisting of cobalt, rhodium, nickel, palladium, carbon, silicon, germanium, and tin, and another component containing an element different from aluminum and each element listed above, in which the total number of types of the elements of the alloy component and another component is three or more.

Abstract: A method of producing a liquid crystal display device according to the present invention includes: a step of providing a liquid crystal panel (110); a step of, through light irradiation while applying a voltage to a mixture via a check terminal (174) and a check line (172) on a rear substrate (130), forming from the mixture a liquid crystal layer (140) containing a liquid crystal compound and an alignment sustaining layer (150, 160) resulting through polymerization of a photopolymerizable compound; and a step of, after forming the liquid crystal layer (140) and the alignment sustaining layer (150, 160), applying a voltage across the liquid crystal layer (140) from the check terminal (172) to check the liquid crystal panel (110).

Abstract: The present invention provides: a vertical alignment liquid crystal display device using comb electrodes for voltage application to liquid crystals, the device being capable of reducing alignment defects of liquid crystals occurring at tips of electrodes, having a high contrast and white brightness, and being excellent in display properties; and a method for producing the same.

Abstract: The manufacturing method of the present invention is a manufacturing method for an active matrix substrate with use of photolithography. The method includes the steps of: (i) removing, in a region where each of terminal sections is to be formed in a non-display region (peripheral region), at least a part of a gate insulating film GI (first interlayer insulating layer) deposited on a gate metal film (first metal film), followed by depositing a source metal film (second metal film) so as to form a plurality of signal wirings (Step (2)); and (ii) etching, in a display region, a passivation film Pas (second interlayer insulating layer) deposited on a plurality of source wirings (signal wirings) and a semiconductor layer (i layer) formed into TFTs so that the passivation film Pas and the semiconductor layer (i layer) have a same pattern except a part of a drain electrode (16a) of each of the TFTs (Step (4)).

Abstract: The present invention provides a semi-transmissive liquid crystal display device that can suppress flicker by adjusting an optimum value of a direct-current offset voltage that is applied to offset a bias electric field generated inside liquid crystal without increasing the number of production steps, and also provides a preferable production method of the semi-transmissive liquid crystal display device. The liquid crystal display device of the present invention is a semi-transmissive liquid crystal display device including: a substrate on aback face side, including a transmissive electrode and a reflective electrode; a substrate on an observation face side, facing the substrate on the back face side; and a liquid crystal layer arranged between the substrate on the back face side and the substrate on the observation face side, wherein the reflective electrode has a molybdenum-containing surface on a side of the liquid crystal layer.

Abstract: An active matrix substrate (30) of the present invention includes (i) a plurality of TFT elements (2) provided on an insulating substrate (10), and (ii) pixel electrodes (7) electrically connected to the plurality of TFT elements (2), respectively. The pixel electrodes (7) has (i) a first transparent electrode layer (7a), (ii) a reflective electrode layer (7b) stacked on the first transparent electrode layer (7a), which reflective electrode layer (7b) has a smaller area than that of the first transparent electrode layer (7a), and (iii) a second transparent electrode layer (7c) stacked so as to cover at least the reflective electrode layer (7b). Hence, it is possible to realize a transflective liquid crystal display device which suppresses occurrence of a flicker, thereby having high display quality.

Abstract: In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.

Abstract: In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.

Abstract: In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.

Abstract: The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an, organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

Abstract: The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

Abstract: The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

Abstract: The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.