Patents by Inventor Yumiko Kawano
Yumiko Kawano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090140353Abstract: The present invention is a method of film deposition that comprises a film-depositing step of supplying a high-melting-point organometallic material gas and a nitrogen-containing gas to a processing vessel that can be evacuated, so as to deposit a thin film of a metallic compound of a high-melting-point metal on a surface of an object to be processed placed in the processing vessel. A partial pressure of the nitrogen-containing gas during the film-depositing step is 17% or lower, in order to increase carbon density contained in the thin film.Type: ApplicationFiled: October 24, 2006Publication date: June 4, 2009Inventors: Hideaki Yamasaki, Yumiko Kawano
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Publication number: 20090142491Abstract: The present invention is a method of film deposition that comprises a first gas-supplying step of supplying a high-melting-point organometallic material gas to a processing vessel that can be evacuated, and a second gas-supplying step of supplying, to the processing vessel, a gas consisting of one, or two or more gases selected from a nitrogen-containing gas, a silicon-containing gas, and a carbon-containing gas, wherein a thin metallic compound film composed of one, or two or more compounds selected from a high-melting-point metallic nitride, a high-melting-point metallic silicate, and a high-melting-point metallic carbide is deposited on the surface of an object to be processed, placed in the processing vessel. The first and second gas-supplying steps are alternately carried out, and in these steps, the object to be processed is held at a temperature equal to or higher than the decomposition-starting temperature of the high-melting-point organometallic material.Type: ApplicationFiled: July 7, 2006Publication date: June 4, 2009Inventors: Kazuhito Nakamura, Hideaki Yamasaki, Yumiko Kawano
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Publication number: 20090117270Abstract: A method for processing a substrate includes a film forming step of supplying a film forming gas into the processing chamber to form a film on the substrate, a cleaning step of supplying a plasma-exited cleaning gas into the processing chamber after the film forming step to clean the inside of the processing chamber, and a coating step of forming a coating within the processing chamber after the cleaning step. The cleaning step includes a high pressure cleaning of regulating the pressure in the processing chamber so that cleaning is mainly performed by molecules formed by recombining radicals in the cleaning gas, and the coating step includes a low temperature film forming step of forming the coating film under the condition that the temperature of a substrate supporting table is set lower than that in the film formation on the substrate during the film formation step.Type: ApplicationFiled: July 25, 2006Publication date: May 7, 2009Applicant: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Kazuhito Nakamura, Yumiko Kawano
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Publication number: 20090035466Abstract: A substrate is placed and heated in a process chamber. A gas of a pentadienyl compound of ruthenium, such as 2,4-dimethylpentadienyl ethylcyclopentadienyl ruthenium, and oxygen gas are supplied into the process chamber. These gases react with each other on the substrate thus heated, and a ruthenium film is thereby formed on the substrate.Type: ApplicationFiled: August 15, 2008Publication date: February 5, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Yumiko KAWANO, Hideaki YAMASAKI, Susumu ARIMA
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Patent number: 7482283Abstract: The present invention relates to a method and apparatus for forming a thin film using the ALD process. Prior to the ALD process where each of a plurality of source gasses is supplied one by one, plural times, a pretreatment process is performed in which the source gasses are simultaneously supplied to shorten an incubation period and improve throughput.Type: GrantFiled: December 11, 2001Date of Patent: January 27, 2009Assignee: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Yumiko Kawano
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Publication number: 20090004383Abstract: The present invention provides a process for forming a strontium-containing thin film of a cyclopentadienyl-based strontium compound, which is in the liquid state at room temperature to 50° C., can be purified by distillation, present as a monomer, has high vapor pressure, and suitable for mass production. bis(propyltetramethylcyclopentadienyl)strontium is used as an Sr source to form a strontium-containing thin film such as a SrTiO3 film, a (Ba, Sr)TiO3 film by chemical vapor deposition or atomic layer deposition.Type: ApplicationFiled: June 25, 2008Publication date: January 1, 2009Applicants: KABUSHIKIKAISHA KOJUNDOKAGAKU KENKYUSHO, TOKYO ELECTRON LIMITEDInventors: Hidekimi KADOKURA, Shintaro HIGASHI, Yoshinori KUBOSHIMA, Yumiko KAWANO
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Patent number: 7456109Abstract: A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.Type: GrantFiled: November 14, 2003Date of Patent: November 25, 2008Assignee: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Kazuhito Nakamura, Koumei Matsuzawa, Tsukasa Matsuda, Yumiko Kawano
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Patent number: 7419702Abstract: A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.Type: GrantFiled: March 31, 2004Date of Patent: September 2, 2008Assignees: Tokyo Electron Limited, International Business Machines Corp.Inventors: Kazuhito Nakamura, Cory Wajda, Enrico Mosca, Yumiko Kawano, Gert Leusink, Fenton R. McFeely, Sandra G. Malhotra
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Publication number: 20080175994Abstract: A method is used for forming an SrTiO3 film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C5(CH3)5)2 is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO3 film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.Type: ApplicationFiled: January 24, 2008Publication date: July 24, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Yumiko KAWANO, Akinobu Kakimoto, Hidekimi Kadokura, Shintaro Higashi
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Patent number: 7361595Abstract: A semiconductor substrate is placed in a predetermined processing vessel, and oxygen gas activated by, e.g. conversion into a plasma is supplied onto an insulating film. The surfaces of an interlevel insulating film and insulating film are exposed to the activated oxygen gas. After that, a transition metal film, e.g. a ruthenium film, is formed by CVD.Type: GrantFiled: March 14, 2002Date of Patent: April 22, 2008Assignee: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Susumu Arima, Yumiko Kawano
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Patent number: 7344754Abstract: A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.Type: GrantFiled: June 20, 2005Date of Patent: March 18, 2008Assignee: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Tatsuo Hatano, Yumiko Kawano
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Publication number: 20070134919Abstract: A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.Type: ApplicationFiled: December 8, 2006Publication date: June 14, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Isao Gunji, Yumiko Kawano
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Patent number: 7189431Abstract: A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.Type: GrantFiled: September 30, 2004Date of Patent: March 13, 2007Assignees: Tokyo Electron Limited, International Business Machines Corp.Inventors: Hideaki Yamasaki, Kazuhito Nakamura, Yumiko Kawano, Gert J. Leusink, Fenton R. McFeely, Paul Jamison
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Patent number: 7105060Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.Type: GrantFiled: August 13, 2004Date of Patent: September 12, 2006Assignee: Tokyo Electron LimitedInventors: Yukihiro Shimogaki, Yumiko Kawano
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Patent number: 7078341Abstract: A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.Type: GrantFiled: September 30, 2003Date of Patent: July 18, 2006Assignees: Tokyo Electron Limited, International Business Machines CorporationInventors: Hideaki Yamasaki, Tsukasa Matsuda, Atsushi Gomi, Tatsuo Hatano, Masahito Sugiura, Yumiko Kawano, Gert J Leusink, Fenton R McFeely, Sandra G. Malhotra
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Patent number: 7067422Abstract: A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.Type: GrantFiled: March 31, 2004Date of Patent: June 27, 2006Assignees: Tokyo Electron Limited, International Business Machines CorporationInventors: Kazuhito Nakamura, Hideaki Yamasaki, Yumiko Kawano, Gert J. Leusink, Fenton R. McFeely, John J. Yurkas, Vijay Narayanan
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Patent number: 7063871Abstract: A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.Type: GrantFiled: July 14, 2003Date of Patent: June 20, 2006Assignee: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Tatsuo Hatano, Tsukasa Matsuda, Taro Ikeda, Kazuhito Nakamura, Koumei Matsuzawa, Yumiko Kawano, Mitsuhiro Tachibana
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Publication number: 20060124151Abstract: A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.Type: ApplicationFiled: November 14, 2003Publication date: June 15, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Hideaki Yamasaki, Kazuhito Nakamura, Koumei Matsuzawa, Tsukasa Matsuda, Yumiko Kawano
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Publication number: 20060068097Abstract: A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.Type: ApplicationFiled: September 30, 2004Publication date: March 30, 2006Applicants: TOKYO ELECTRON LIMITED, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hideaki Yamasaki, Kazuhito Nakamura, Yumiko Kawano, Gert Leusink, Fenton McFeely, Paul Jamison
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Publication number: 20060068098Abstract: A method for depositing a Ru metal layer on a substrate is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas, a ruthenium-carbonyl precursor, and hydrogen. The method further includes depositing a Ru metal layer on the substrate by a thermal chemical vapor deposition process. In one embodiment of the invention, the ruthenium-carbonyl precursor can contain Ru3(CO)12. and the Ru metal layer can be deposited at a substrate temperature resulting in the Ru metal layer having predominantly Ru(002) crystallographic orientation.Type: ApplicationFiled: September 27, 2004Publication date: March 30, 2006Applicant: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Yumiko Kawano, Gert Leusink