Abstract: A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.

Abstract: An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel (10) for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit (12) for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (10), and an evacuating system (14) for evacuating the processing vessel (10). The evacuating system (14) includes a vacuum pump (26), a high-temperature trapping device (28) disposed above the vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas.

Abstract: A substrate treating apparatus comprising a treatment chamber for housing a substrate, a stage on which the substrate is placed within the treatment chamber, a heating member arranged within the stage and used for heating the substrate, a sealing member arranged between the stage and the treatment chamber, and a cooling mechanism having a cooling medium, whose latent heat of vaporization is utilized for cooling the sealing member.

Abstract: A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.

Abstract: A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

Abstract: A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.

Abstract: A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

Abstract: WF6 is used as a source gas of tungsten, and NH3 is used as a source gas of nitrogen. The partial pressure of WF6 is set to be higher than that of NH3. The substrate temperature is set to about 400° C. to 450° C. Tungsten nitride is deposited and then heated, to form a contact plug (106).

Abstract: A metal film forming method, includes the steps of (a) (s13, s15) supplying a plural kinds of ingredient gases to a base barrier film (3) in sequence, wherein at least one of the gases includes a metal, and (b) (s14, s16) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film (5) of the metal is formed on the base barrier film (3).

Abstract: A film forming unit includes a source vessel for receiving a raw material from which source gas is produced, a processing vessel for applying a film forming process on a semiconductor substrate, a source supply line for supplying the source gas from the source vessel to the processing vessel, a gas exhaust line for exhausting gas from the processing vessel, having a vacuum pump system structured by a turbo molecular pump and a dry pump, and a pre-flow line branching off from the source supply line while bypassing the processing vessel and the turbo molecular pump, and joining to the gas exhaust line. Moreover, the source supply line includes piping having an inner diameter greater than 6.4 mm, and a turbo molecular pump is provided in the pre-flow line.

Abstract: A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.

Abstract: A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.

Abstract: A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.

Abstract: A semiconductor device includes an interlevel insulating film, a contact plug, a barrier film, a first electrode, a capacitor insulating file, and a second electrode. The interlevel insulating film is formed on a semiconductor substrate. The contact plug extends through the interlevel insulating film and is formed from a conductive material. The barrier film is formed from a tungsten-based material on the upper surface of the contact plug. The first electrode is connected to the contact plug via the barrier film and formed from a metal material on the interlevel insulating film. The capacitor insulating film is formed from an insulating metal oxide on the first electrode. The second electrode is insulated by the capacitor insulating film and formed on the surface of the first electrode.

Abstract: A semiconductor substrate (101) is placed in a predetermined processing vessel, and oxygen gas activated by, e.g., conversion into a plasma is supplied onto an insulating film (108). The surfaces of an interlevel insulating film (106) and insulating film (108) are exposed to the activated oxygen gas. After that, a ruthenium film (109) is formed by CVD.

Abstract: A film-forming unit of the invention includes a processing container in which a vacuum can be created, a stage arranged in the processing container, on which an object to be processed is placed, a process-gas supplying means for supplying a process gas into the processing container, and a heating means for heating the object to be processed placed on the stage. A division wall surrounds a lateral side and a lower side of the stage. An inert gas is introduced into a stage-side region surrounded by the division wall, by an inert-gas supplying means. A gap-forming member is arranged in such a manner that its inner peripheral portion is arranged above a peripheral portion of the object to be processed placed on the stage via a gap and its outer peripheral portion is arranged above the division wall via a gap.

Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.

Abstract: After a thin film is deposited on a treatment surface of a wafer and the wafer is transferred out of a treatment chamber, a contact projection of a clamp is brought into contact with a susceptor to heat the clamp. Next, a wafer is disposed on the susceptor by elevating the clamp when the wafer, on which a thin film is not deposited, is transferred in. Thereafter, the clamp is brought into contact with the wafer and the wafer is stabilized to a predetermined temperature. Thereafter, a thin film is deposited on a treatment surface of the wafer.

Abstract: The present invention relates to a method and apparatus for forming a thin film using the ALD process. Prior to the ALD process where each of a plurality of source gasses is supplied one by one, plural times, a pretreatment process is performed in which the source gasses are simultaneously supplied to shorten an incubation period and improve throughput.