Abstract: A semiconductor device includes a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a first lateral direction. The semiconductor device includes third conductive structures each extending along the first lateral direction. The third conductive structures are disposed across the first and second conductive structures. The semiconductor device includes a first semiconductor channel extending along the vertical direction. The first semiconductor channel is disposed between the third conductive structures and the first conductive structure, and between the third conductive structures and the second conductive structure. The first and second conductive structures each have a first varying width along the first lateral direction, and the first semiconductor channel has a second varying width along a second lateral direction.

Abstract: A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures have respective different thicknesses in accordance with the varying width of the first and second conductive structures.

Abstract: Provided are a display panel. A non-display region of the display panel includes at least one arc angle region and a first power bus passing through the at least one arc angle region. The first power bus includes a first bus portion and a second bus portion. The first bus portion is disposed on a side of a display region and is electrically connected to the second bus portion. The first bus portion is configured to be connected to a power supply. Multiple power signal lines are also disposed in the display region. The power signal lines are electrically connected between the second bus portion in at least one arc angle region and the first bus portion. The current in the second bus portion in the arc angle region is shunted to the display region through the power signal lines disposed in the display region.

Abstract: A device substrate, including a circuit substrate, a first side wiring, a sealant structure, and a second side wiring, is provided. The first side wiring extends from a first surface of the circuit substrate to a second surface of the circuit substrate along a side surface of the circuit substrate. The sealant structure is located above the first surface and covers the first side wiring on the first surface. The second side wiring extends from the sealant structure to the first side wiring located on the side surface and the second surface of the circuit substrate.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises a gate, a ferroelectric layer disposed on the gate; a first channel layer disposed on the ferroelectric layer, a second channel layer disposed on the ferroelectric layer, and source and drain regions disposed on the first channel layer. The first channel layer includes a first thickness and the second channel layer includes a second thickness. A ratio of the first thickness and the second thickness is less than ?.

Abstract: Provided is a sensing and adaptation method for exercise. The method is applied to a sensing and adaptation device for exercise and includes the following steps: generating an exercise game and a first resistance setting to an exercise equipment according to a first exercise target data; receiving an exercise interactive data of a user operating the exercise game from the exercise equipment; generating a reaction-time data according to a stage data of the exercise game and the exercise interactive data and generating an operation trajectory data according to the first resistance setting, the stage data and the exercise interactive data; calculating a deviation degree of the operation trajectory data; calculating a second exercise target data according to the deviation degree; generating a second resistance setting and updating the exercise game according to the second exercise target, and transmitting the second resistance setting to the exercise equipment.

Abstract: The present disclosure provides a circuit and a method thereof for setting an SDRAM. The circuit includes at least one register and a controller circuit. The controller circuit is configured to: control the SDRAM to switch to an initialization setting mode, wherein the initialization setting mode is utilized for initialing the SDRAM; set value of the at least one register under the initialization setting mode; and set the SDRAM according to the value of the at least one register.

Abstract: An illumination module is provided. The illumination module includes a light-emitting unit. The light-emitting unit includes a light-emitting element array and a focusing lens array. The light-emitting element array includes a plurality of light-emitting elements. The light-emitting elements are used for generating a plurality of light beams. The focusing lens array includes a plurality of focusing lenses. Each of the light-emitting elements corresponds to at least one of the focusing lenses.

Abstract: A foam and a foaming composition are provided. The foam includes a composite material and a plurality of foam cells, wherein the foam cells are disposed in the composite material. The composite material includes a modified sulfur-containing polymer and a fluorine-containing polymer fiber, wherein a degree of orientation as defined by the ratio I110/I200 is from 1.0 to 1.3, wherein I110 is the X-ray diffraction peak intensity of (110) planes of the modified sulfur-containing polymer and I200 is the X-ray diffraction peak intensity of (200) planes of the modified sulfur-containing polymer.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The method includes forming first channel structures, second channel structures, and third channel structures. The method also includes forming gate dielectric layers surrounding the first channel structures, the second channel structures, and the third channel structures and forming dipole layers over the gate dielectric layers. The method also includes forming a dummy material in a first space between the first and the second channel structures and in a second space between the second and the third channel structures and removing first portions of the dummy material. The method also includes implanting first dopants in the dummy material in the first space and removing second portions of the dummy material in the first space and the second space. The method also includes removing the dipole layers in the top device region and completely removing the dummy material.

Abstract: A blockchain-based method for saving research data is implemented by a processing system. The processing system is connected to a blockchain system, and stores a user account associated with the blockchain system. The method includes sending a deployment request that includes the user account and an application to the blockchain system, in order for the blockchain system to deploy the application associated with the user account on the blockchain system. The method further includes generating and sending a processing request that includes a to-be-processed dataset to the blockchain system, in order for the blockchain system to analyze the to-be-processed dataset using the application so as to obtain a target dataset that corresponds to the to-be-processed dataset and that indicates an analysis result of the to-be-processed dataset, to store the to-be-processed dataset and the target dataset in the blockchain system, and to send the target dataset to the processing system.

Abstract: A memory cell structure includes a transistor structure and a capacitor structure, where the capacitor structure includes a hydrogen absorption layer. The hydrogen absorption layer absorbs hydrogen, which prevents or reduces the likelihood of the hydrogen diffusing into an underlying metal-oxide channel of the transistor structure. In this way, the hydrogen absorption layer minimizes and/or reduces the likelihood of hydrogen contamination in the metal-oxide channel, which may enable a low current leakage to be achieved for the memory cell structure and reduces the likelihood of data corruption and/or failure of the memory cell structure, among other examples.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.

Abstract: An illumination module is provided. The illumination module includes a light-emitting unit. The light-emitting unit includes a light-emitting element array and a focusing lens array. The light-emitting element array includes a plurality of light-emitting elements. The light-emitting elements are used for generating a plurality of light beams. The focusing lens array includes a plurality of focusing lenses. Each of the light-emitting elements corresponds to at least one of the focusing lenses.

Abstract: A semiconductor device including a FET includes an isolation insulating layer disposed in a trench of the substrate, a gate dielectric layer disposed over a channel region of the substrate, a gate electrode disposed over the gate dielectric layer, a source and a drain disposed adjacent to the channel region, and an embedded insulating layer disposed below the source, the drain and the gate electrode and both ends of the embedded insulating layer are connected to the isolation insulating layer.

Abstract: A video processing apparatus includes a video encoding circuit and a post-processing circuit. The video encoding circuit receives a first source data, and encodes the first source data to generate a first bitstream, wherein the first source data includes a first source luminance channel data and a first source chrominance channel data, and the first bitstream includes a first compressed luminance channel data and a first compressed chrominance channel data. The post-processing circuit derives an auxiliary compressed chrominance channel data from an auxiliary input, and generates and outputs an output bitstream that includes the first compressed luminance channel data and the auxiliary compressed chrominance channel data.

Abstract: The invention provides a semiconductor structure, which comprises a middle/high voltage device region and a low voltage device region, a plurality of fin structures disposed in the low voltage device region, and a protruding part located at a boundary Between the middle/high voltage device region and the low voltage device region. A top surface of the protruding part is flat, and the top surface of the protruding part is aligned with a flat top surface of the middle/high voltage device region.

Abstract: A semiconductor device including a FET includes an isolation insulating layer disposed in a trench of the substrate, a gate dielectric layer disposed over a channel region of the substrate, a gate electrode disposed over the gate dielectric layer, a source and a drain disposed adjacent to the channel region, and an embedded insulating layer disposed below the source, the drain and the gate electrode and both ends of the embedded insulating layer are connected to the isolation insulating layer.