Abstract: The disclosure provides a touch panel and a touch device. The touch panel includes a touch film layer and a fingerprint identification film layer. The touch film layer includes at least one preset hollow. An orthographic projection of the fingerprint identification film layer on the touch film layer is located in at least one preset hollow area.

Abstract: An automatic sewage regulation system and a regulating method are provided. The automatic sewage regulation system is disposed between preset sewage sources and a preset sewage treatment apparatus and includes an equalization tank and an automatic sewage regulating device. The automatic sewage regulating device includes sensing modules for sensing and transmitting water quality sensing values of sewage in the preset sewage sources to a control module which outputs regulating signals to water flow regulators, so that the water flow regulators can regulate flowing volumes of the sewage of the preset sewage sources according to the regulating signal, to keep a water quality sensing value of the sewage in the equalization tank within a preset range, thereby preventing the equalization tank from converging sewage having excessively-high or excessively-low water quality sensing value. As a result, burden of a preset sewage treatment apparatus can be reduced.

Abstract: A semiconductor device including a FET includes an isolation insulating layer disposed in a trench of the substrate, a gate dielectric layer disposed over a channel region of the substrate, a gate electrode disposed over the gate dielectric layer, a source and a drain disposed adjacent to the channel region, and an embedded insulating layer disposed below the source, the drain and the gate electrode and both ends of the embedded insulating layer are connected to the isolation insulating layer.

Abstract: Provided is a method for treating a SARS-CoV2 3CLpro-related disease in a subject in need thereof by blocking dimerization of 3C-like main protease (3CLpro) of the SARS-CoV2, including administering to the subject a first agent which binds to a first binding site of a SARS-CoV2 3CLpro complex and a second agent which binds to a second binding site of the SARS-CoV2 3CLpro complex, wherein the first binding site and the second binding site are functionally different sites in the three-dimensional structure of the SARS-CoV2 3CLpro complex. Also provided is a pharmaceutical combination including the first agent and the second agent for suppressing SARS-CoV2, thereby alleviating COVID-19.

Abstract: A video decoding method includes: before residual decoding of a coding unit is completed, referring to available information to determine whether to decode information that an inverse transform (IT) circuit needs for applying inverse transform to transform blocks of the coding unit, and generating a determination result; and controlling coefficient transmission of the coding unit to the IT circuit according to the determination result.

Abstract: A video processing circuit includes a first buffer and a computation circuit. Before a second one-dimensional processing operation is performed upon a plurality of consecutive blocks in a second direction, the first computation circuit generates a first processing result for each of the plurality of consecutive blocks by performing a first one-dimensional processing operation upon each of the plurality of consecutive blocks in a first direction that is different from the second direction, and further stores a plurality of first processing results of the plurality of consecutive blocks into the first buffer.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.

Abstract: A method includes: providing a first gate electrode over the substrate; forming a first pair of spacers on two sides of the first gate electrode; removing the first gate electrode to form a first trench between the first pair of spacers; depositing a dielectric layer in the first trench; depositing a first layer over the dielectric layer; removing the first layer from the first trench; and depositing a work function layer over the dielectric layer in the first trench.

Abstract: A context-based adaptive binary arithmetic coding (CABAC) decoder includes a bin decode circuit and a context update circuit. The bin decode circuit supports decoding of multiple bins in one cycle. The multiple bins include a first bin and a second bin. The bin decode circuit generates a bin value of the first bin according to a first set of multiple contexts, a first range and a first offset, and generates one bin value of the second bin according to a second set of multiple contexts, a second range and a second offset. The context update circuit updates the first set of multiple contexts in response to the bin value of the first bin, to generate a first set of multiple updated contexts, and updates the second set of multiple contexts in response to said one bin value of the second bin, to generate a second set of multiple updated contexts.

Abstract: A memory system for maintaining data consistency and an operation method thereof are provided. The operation method includes: receiving a first data in a first cache of a first memory from a processor; reading the first data from the first cache and writing the first data as a redo log into a log buffer of the first memory; writing the redo log from the log buffer into a memory controller of the processor; performing an in-memory copy in a second memory to copy a second data as an undo log, wherein the second data is an old version of the first data; and writing the redo log from the memory controller into the second memory for covering the second data by the redo log as a third data, wherein the redo log, the third data and the first data are the same.

Abstract: A semiconductor device including a FET includes an isolation insulating layer disposed in a trench of the substrate, a gate dielectric layer disposed over a channel region of the substrate, a gate electrode disposed over the gate dielectric layer, a source and a drain disposed adjacent to the channel region, and an embedded insulating layer disposed below the source, the drain and the gate electrode and both ends of the embedded insulating layer are connected to the isolation insulating layer.

Abstract: Solutions for automated labeling of child objects within tagged parents include: receiving a plurality of parent objects, each having a tag and including a plurality of child objects; receiving a machine learning (ML) component operable to rank objects according to relevance to queries; for each parent object: generating a set of restricted objects, wherein each restricted object corresponds to each child object in the plurality of child objects; for each of a plurality of queries, ranking, with the ML component, the restricted objects according to relevance; based at least on the query and an inverse of the rank of the restricted objects, assigning a child object label.

Abstract: An electronic device includes a substrate, multiple side wires, and a protection structure. The substrate has a first main surface, a side surface, and a first multi-turning surface connected between the first main surface and the side surface. The first multi-turning surface includes multiple first turning surfaces with differing normal directions. The side wires are disposed on the substrate. Each of the side wires extends from the first main surface over the first multi-turning surface to the side surface. The protection structure is disposed on the substrate and includes a wire protection part covering the side wires. The wire protection part has a first thickness at the side surface, a second thickness at the first main surface, and a third thickness at at least one of the first turning surfaces. The first thickness is greater than the second thickness, and the second thickness is greater than the third thickness.

Abstract: A computation method and a computation apparatus exploiting weight sparsity, adapted for a processor to perform multiply-and-accumulate operations on a memory including multiple input and output lines crossing each other. In the method, weights are mapped to the cells of each operation unit (OU) in the memory. The rows of the cells of each OU are compressed by removing at least one row of the cells each mapped with a weight of 0, and an index including values each indicating a distance between every two rows of the cells including at least one cell mapped with a non-zero weight for each OU is encoded. Inputs are inputted to the input lines corresponding to the rows of each OU excluding the rows of the cells with the weight of 0 according to the index and outputs are sensed from the output lines corresponding to the OU to compute a computation result.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.

Abstract: A method includes: providing a substrate; forming a first pair of source/drain regions in the substrate; disposing an interlayer dielectric layer over the substrate, the interlayer dielectric layer having a first trench between the first pair of source/drain regions; depositing a dielectric layer in the first trench; depositing a barrier layer over the dielectric layer; performing an operation on the substrate; removing the barrier layer from the first trench to expose the dielectric layer subsequent to the operation; and depositing a work function layer over the dielectric layer in the first trench.

Abstract: A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures have respective different thicknesses in accordance with the varying width of the first and second conductive structures.

Abstract: A method and apparatus for minimizing silicon germanium facets in planar metal oxide semiconductor structures is disclosed. For example, a device fabricated according to the method may include a semiconductor substrate, a plurality of gate stacks formed on the substrate, a plurality of source/drain regions formed from silicon germanium, and a shallow trench isolation region positioned between two source/drain regions of the plurality of source/drain regions. Each source/drain region of the plurality of source/drain regions is positioned adjacent to at least one gate stack of the plurality of gate stacks. Moreover, the shallow trench isolation region forms a trench in the substrate without intersecting the two source/drain regions.