Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a source/drain region formed in a semiconductor substrate, a source/drain contact structure formed over the source/drain region, and a gate electrode layer formed adjacent to the source/drain contact structure. The semiconductor device structure also includes a first spacer and a second spacer laterally and successively arranged from the sidewall of the gate electrode layer to the sidewall of the source/drain contact structure. The semiconductor device structure further includes a silicide region formed in the source/drain region. The top width of the silicide region is greater than the bottom width of the source/drain contact structure and less than the top width of the source/drain region.

Abstract: A three-way catalyst having low NH3 formation is disclosed. The catalyst includes a carrier and a coating material. The coating material includes a precious metal active component and a catalytic material. The precious metal active component includes a first precious metal active component and a second precious metal active component. The first precious metal active component is a composition containing Ru. The second precious metal active component is a composition containing Pt, Pd and Rh. Alternatively, the second precious metal active component is a composition containing Pd and Rh.

Abstract: A glass ceramic manufactured by sequentially performing the processes of melting and thermal decomposition, water quenching and sintering of a glass composite. The glass ceramic includes 38 wt % to 49 wt % CaO, 41 wt % to 52 wt % SiO2 and 0.1 wt % to 20 wt % P2O5. The glass composite includes a glass component and P2O5, and the glass component includes CaCO3 and SiO2 and does not include an alkali metal oxide. The melting and thermal composition temperature is from 1350° C. to 1650° C. The sintering temperature is from 750° C. to 1050° C. By the combination of CaO, SiO2 and P2O5 and the control of the contents of CaO, SiO2 and P2O5 within the aforementioned ranges, and the glass ceramic contains no alkali metal oxide, the glass ceramic has good mechanical strength and low cytotoxicity.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes an inter-level dielectric layer. A first contact that includes a fill material is formed that extends through the inter-level dielectric layer. The inter-level dielectric layer is recessed such that the fill material extends above a top surface of the inter-level dielectric layer. An etch-stop layer is formed on the inter-level dielectric layer such that the fill material of the first contact extends into the etch-stop layer. A second contact is formed extending through the etch-stop layer to couple to the first contact. In some such examples, the second contact physically contacts a top surface and a side surface of the first contact.

Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, an exemplary method of forming the semiconductor structure includes forming a fin structure extending from a front side of a substrate, recessing a source region of the fin structure to form a source opening, forming a semiconductor plug under the source opening, planarizing the substrate to expose the semiconductor plug from a back side of the substrate, performing a pre-amorphous implantation (PAI) process to amorphize the substrate, replacing the amorphized substrate with a dielectric layer, and replacing the semiconductor plug with a backside source contact. By performing the PAI process, crystalline semiconductor is amorphized and may be substantially removed. Thus, the performance and reliability of the semiconductor structure may be advantageously improved.

Abstract: Various embodiments of the present disclosure provide a via-first process for connecting a contact to a gate electrode. In some embodiments, the contact is formed extending through a first interlayer dielectric (ILD) layer to a source/drain region bordering the gate electrode. An etch stop layer (ESL) is deposited covering the first ILD layer and the contact, and a second ILD layer is deposited covering the ESL. A first etch is performed into the first and second ILD layers and the etch stop layer to form a first opening exposing the gate electrode. Etches are performed into the second ILD layer and the etch stop layer to form a second opening overlying the contact and overlapping the first opening, such that a bottom of the second opening slants downward from the contact to the first opening. A gate-to-contact (GC) structure is formed filling the first and second openings.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a power rail; a bottom semiconductor layer formed over the dielectric layer; a backside spacer formed along a sidewall of the bottom semiconductor layer; a conductive feature contacting a sidewall of the dielectric layer and a sidewall of the backside spacer; channel semiconductor layers over the bottom semiconductor layer, wherein the channel semiconductor layers are stacked up and separated from each other; a metal gate structure wrapping each of the channel semiconductor layers; and an epitaxial source/drain (S/D) feature contacting a sidewall of each of the channel semiconductor layers, wherein the epitaxial S/D feature contacts the conductive feature, and the conductive feature contacts the power rail.

Abstract: In an embodiment, a method includes: forming a first fin extending from a substrate; forming a second fin extending from the substrate, the second fin being spaced apart from the first fin by a first distance; forming a metal gate stack over the first fin and the second fin; depositing a first inter-layer dielectric over the metal gate stack; and forming a gate contact extending through the first inter-layer dielectric to physically contact the metal gate stack, the gate contact being laterally disposed between the first fin and the second fin, the gate contact being spaced apart from the first fin by a second distance, where the second distance is less than a second predetermined threshold when the first distance is greater than or equal to a first predetermined threshold.

Abstract: A method for reporting touch on a touchscreen includes detecting first touch data from the touchscreen corresponding to a first touch on the touchscreen; determining coordinates of the first touch from the first touch data; reporting the coordinates of the first touch at a first time; determining predicted coordinates of a second touch based on a linear regression of historical touch data; and reporting the predicted coordinates of the second touch at a second time, where the second time occurs after the first time.

Abstract: The present invention discloses a glass with high refractive index for fiber optic imaging elements with medium-expansion and fabrication method therefor, the glass comprising the following components in percentage by weight: SiO2 5-9%, Al2O3 0-1%, B2O3 23-28%, CaO 0-3%, BaO 6-12%, La2O3 30-34%, Nb2O5 4-8%, Ta2O5 0-1%, Y2O3 0-1%, ZnO 4-9%, TiO2 4-8%, ZrO2 4-6%, SnO2 0-1%. The present invention further provides a fabrication method for the glass with a high refractive index, comprising: putting raw materials quartz sand, aluminum hydroxide, boric acid or boric anhydride, calcium carbonate, barium carbonate or barium nitrate, lanthanum oxide, niobium oxide, tantalum oxide, yttrium oxide, zinc oxide, titanium dioxide, zirconium oxide and stannic oxide, etc. into a platinum crucible according to the requirement of dosing, melting at a high temperature, cooling and fining, leaking and casting to form a glass rod, and then annealing, cooling and chilling the molded glass rod.

Abstract: An integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. The first transistor includes a channel region, a source region and a drain region. A conductive contact is coupled to the drain region of the first transistor. A second transistor that includes a channel region, a source region a drain region is adjacent to the first transistor. The gate of the second transistor is spaced from the gate of the first transistor. A conductive via passes through an insulation layer to electrically connect to the gate of the second transistor. An expanded conductive via overlays both the conductive contact and the conductive via to electrically connect the drain of the first transistor to the gate of the second transistor.

Abstract: A display pixel is provided that is operable to support hybrid compensation scheme having both in-pixel threshold voltage canceling and external threshold voltage compensation. The display may include multiple p-type silicon transistors with at least one n-type semiconducting-oxide transistor and one storage capacitor. An on-bias stress phase may be performed prior to a threshold voltage sampling and data programming phase to mitigate hysteresis and improve first frame response. In low refresh rate displays, a first additional on-bias stress operation can be performed separate from the threshold voltage sampling and data programming phase during a refresh frame and a second additional on-bias stress operation can be performed during a vertical blanking frame. The display pixel may be configured to receive an initialization voltage and an anode reset voltage, either of which can be dynamically tuned to match the stress of the first and second additional on-bias stress operations to minimize flicker.

Abstract: A semiconductor device and a method of forming the same are provided. In an embodiment, an exemplary semiconductor device includes two stacks of channel members; a source/drain feature extending between the two stacks of channel members along a direction; a source/drain contact disposed under and electrically coupled to the source/drain feature; two gate structures over and interleaved with the two stacks of channel members; a low-k spacer horizontally surrounding the source/drain contact; and a dielectric layer horizontally surrounding the low-k spacer.

Abstract: The present invention provides a separator formed by hydrolysis of a resin film. The resin film comprises a non-hydrolyzable organic polymer; and a hydrolyzable organic polymer being hydrolyzable by treatment with at least one of an acid aqueous solution, an alkaline aqueous solution and pure water, wherein the content of the hydrolyzable organic polymer ranges from 10 parts by weight to 70 parts by weight relative to 100 parts by weight of the resin film. The separator of the present invention has good ion conductivity and thus, is extremely suitable for use in various types of batteries.

Abstract: An embodiment method includes: forming fins extending from a semiconductor substrate; depositing an inter-layer dielectric (ILD) layer on the fins; forming masking layers on the ILD layer; forming a cut mask on the masking layers, the cut mask including a first dielectric material, the cut mask having first openings exposing the masking layers, each of the first openings surrounded on all sides by the first dielectric material; forming a line mask on the cut mask and in the first openings, the line mask having slot openings, the slot openings exposing portions of the cut mask and portions of the masking layers, the slot openings being strips extending perpendicular to the fins; patterning the masking layers by etching the portions of the masking layers exposed by the first openings and the slot openings; and etching contact openings in the ILD layer using the patterned masking layers as an etching mask.

Abstract: An integrated system for art examination includes a power module, an information receiving and a storage module, an information processing module, a control module, a display module, a paper printing module, and a paper processing module; the information receiving and storage module is used to receive and transmit an examinees registration information, an examination room information and an on-site identity information to the information processing module; the information processing module is used to verify whether the examinees registration information is consistent with the on-site identity information and transmits a conclusion to the control module; the control module controls the display module, the paper printing module and the paper processing module; the display module is used to display information to guide an exam worker how to operate, and an input of the examinee's on-site identity information is completed on the display module through a human-computer interaction.

Abstract: Systems and methods for diagnosing health of a battery using in-vehicle impedance analysis. The method includes receiving a sensed current measurement for a cell of the battery; generating a current profile as a function of the sensed current measurement, including pulses to a peak current, the pulses having a pulse frequency (w); applying a current with the current profile to the cell; for each pulse in the current profile, receiving a voltage measurement for the cell that is responsive to the pulse, calculating an impedance for the cell responsive thereto, the impedance comprising a real component at the pulse frequency (RZw), and an imaginary component at the pulse frequency (IZw), identifying a battery health problem when either RZw exceeds a preprogrammed first threshold for the pulse frequency, or when IZw exceeds a preprogrammed second threshold for the pulse frequency, and storing the RZw and the IZw for the cell.

Abstract: A system, device and method are provided for continuously generating more than 0.01 watt of electrical energy by harnessing mechanical or kinetic energy from a reciprocating motion of a user's torso during breathing. The reciprocating motion causes reciprocating lateral and medial translation of two chambers of the device housing. That reciprocating lateral and medial translation rotates a gear, which in turn, drives a dynamo to produce electrical energy. Since the conversion from the mechanical energy of the spinning rod to power is direct, the energy-conversion efficiency may be up to 90% or higher. The device may further comprise one or more charging means for providing electrical energy to one or more peripheral electronic devices.

Abstract: A fiber optic imaging element includes medium-expansion and a fabrication method including: (1) matching a core glass rod with a cladding glass tube to perform mono fiber drawing; (2) arranging the mono fibers into a mono fiber bundle rod, and then drawing the mono fiber bundle rod into a multi fiber; (3) arranging the multi fiber into a multi fiber bundle rod, and then drawing the multi fiber bundle rod into a multi-multi fiber; (4) cutting the multi-multi fiber, and then arranging the multi-multi fiber into a fiber assembly buddle, then putting the fiber assembly buddle into a mold of heat press fusion process, and performing the heat press fusion process to prepare a block of the fiber optic imaging element with medium-expansion; and (5) edged rounding, cutting and slicing,

Abstract: A device and system for supporting a patient or an object in an examination is provided. The supporting system may include a portion for supporting the body of a patient and/or a head supporting device. The portion for supporting the body may move in one or more directions. The head supporting device may be adjust to meet requirements of imaging when the patient or the object is supine or prone.