Abstract: A method includes forming a gate stack, growing a source/drain region on a side of the gate stack through epitaxy, depositing a contact etch stop layer (CESL) over the source/drain region, depositing an inter-layer dielectric over the CESL, etching the inter-layer dielectric and the CESL to form a contact opening, and etching the source/drain region so that the contact opening extends into the source/drain region. The method further includes depositing a metal layer extending into the contact opening. Horizontal portions, vertical portions, and corner portions of the metal layer have a substantially uniform thickness. An annealing process is performed to react the metal layer with the source/drain region to form a source/drain silicide region. The contact opening is filled to form a source/drain contact plug.

Abstract: Disclosed is an occluding stent. The occluding stent includes a distal flange occluding body, a proximal flange occluding body, and a connection portion. External surfaces of the distal flange occluding body and the proximal flange occluding body are both provided with a coating. An external surface of the connection portion is wholly or partially provided with a coating. A first occluding coating is provided between the distal flange occluding body and an inner cavity of the connection portion. The present invention overcomes the defect that the existing occluder device for closure of an esophagobronchial fistula is harmful to surrounding tissues, makes the device retractable, enhances the safety of the device, and improves life and treatment of patients. A new safe and effective treatment method for an esophagobronchial fistula is provided.

Abstract: A semiconductor die and the method of forming the same are provided. The semiconductor die includes a first interconnect structure, a second interconnect structure including a conductive feature, and a device layer between the first interconnect structure and the second interconnect structure. The device layer includes a semiconductor fin, a first gate structure on the semiconductor fin, a source/drain region adjacent the first gate structure, and a shared contact extending through the semiconductor fin to be electrically connected to the source/drain region and the first gate structure. The conductive feature contacts the shared contact.

Abstract: A system includes a conversion device of a charging station, the conversion device connected to a first energy source of the charging station, and a controller configured to perform an impedance measurement applied to an energy storage system, the energy storage system selected from at least one of a second energy source of the charging station and a battery system of a vehicle. The controller is configured to cause the first energy source to generate a first excitation signal for measuring a first energy source impedance, control the conversion device to adjust a parameter of the first excitation signal to convert the first excitation signal to a converted excitation signal, apply the converted excitation signal to the energy storage system, detect a current response of the energy storage system, and estimate the impedance of the energy storage system based on the current response.

Abstract: A semiconductor structure includes a source/drain (S/D) feature disposed in a semiconductor layer, a metal gate stack (MG) disposed in a first interlayer dielectric (ILD) layer and adjacent to the S/D feature, a second ILD layer disposed over the MG, and an S/D contact disposed over the S/D feature. The semiconductor structure further includes an air gap disposed between a sidewall of a bottom portion of the S/D contact and the first ILD layer, where a sidewall of a top portion of the S/D contact is in direct contact with the second ILD layer.

Abstract: A method of operating a display includes performing a non-synchronized touch scan pattern on a display with a controller coupled to the display. The non-synchronized touch scan pattern schedules touch scans independent of a refresh rate of the display. Upon the controller detecting a first synchronization pulse from a display controller coupled to the controller and the display, a first pulse-checking timer is started. Upon detecting a second synchronization pulse from the display controller and before the first pulse-checking timer expires, a first display refresh rate for the display is obtained from an interval between the first synchronization pulse and the second synchronization pulse. A synchronized touch scan pattern is performed with the controller, and is scheduled to avoid touch scans coinciding with refreshes of the display performed at the first display refresh rate.

Abstract: Implementations of the subject matter described herein relate to generating animated infographics from static infographics. A computer-implemented method comprises: extracting visual elements of a static infographic; determining, based on the visual elements, a structure of the static infographic at least indicating a layout of the visual elements in the static infographic; and applying a dynamic effect to the visual elements based on the structure of the static infographic to generate an animated infographic.

Abstract: An example gesture detection method includes detecting at a first time a first touch on a touch panel, where the first touch covers a first area of the touch panel, and then determining whether the first touch is within a track region that surrounds a fingerprint sensing region. The method includes determining whether the first touch is within the fingerprint sensing region, the fingerprint sensing region including a sensing surface of a fingerprint sensor. The method includes determining a first fraction of the fingerprint sensing region covered by the first touch and determining whether the first fraction exceeds a first threshold. The first threshold is a majority of the fingerprint sensing region. The method includes determining a second fraction of all of the first area that is within the fingerprint sensing region and determining whether the second fraction exceeds a second threshold, where the second threshold is a fraction indicative of a majority of an area associated with the corresponding touch.

Abstract: A method of maximizing power efficiency for a power amplifier system comprises obtaining a power supply voltage; determining a first voltage level sufficient for a power amplifier of the power amplifier system to output an output power; determining a second voltage level lower than the first voltage level; determining whether the power amplifier is activated, to generate a determination result; determining to convert the power supply voltage into a supply voltage with the first voltage level or the second voltage level according to the determination result; and supplying the power amplifier with the supply voltage.

Abstract: An example gesture detection method includes detecting at a first time a first touch on a touch panel, where the first touch covers a first area of the touch panel, and then determining whether the first touch is within a track region that surrounds a fingerprint sensing region. The method includes determining whether the first touch is within the fingerprint sensing region, the fingerprint sensing region including a sensing surface of a fingerprint sensor. The method includes determining a first fraction of the fingerprint sensing region covered by the first touch and determining whether the first fraction exceeds a first threshold. The first threshold is a majority of the fingerprint sensing region. The method includes determining a second fraction of all of the first area that is within the fingerprint sensing region and determining whether the second fraction exceeds a second threshold, where the second threshold is a fraction indicative of a majority of an area associated with the corresponding touch.

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

Abstract: A semiconductor structure and a method of forming the same are provided. An exemplary method of forming the semiconductor structure includes receiving a workpiece including a fin structure over a front side of a substrate, recessing a source region of the fin structure to form a source opening, extending the source opening into the substrate to form a plug opening, forming a semiconductor plug in the plug opening, planarizing the substrate to expose the semiconductor plug from a back side of the substrate, performing a first wet etching process to remove a portion of the substrate, performing a pre-amorphous implantation (PAI) process to amorphize a rest portion of the substrate, performing a second wet etching process to remove the amorphized rest portion of the substrate to form a dielectric opening, depositing a dielectric layer in the dielectric opening, and replacing the semiconductor plug with a backside source contact.

Abstract: In some examples, an apparatus may include a backlight unit (BLU) including an electronic integrated circuit layer, a photonic integrated circuit layer, a color conversion module, and a display interface layer. In some examples, a BLU may include at least one laser or may be configured to receive laser light from at least one external laser source. Laser light may be transmitted towards a portion of the display interface layer using the photonic integrated circuit. Color conversion modules may be used to convert the laser light into one or more desired colors. Example apparatus may be used in head-mounted devices such as augmented reality and/or virtual reality devices. Other devices, methods, systems, and computer-readable media are also disclosed.

Abstract: Techniques are provided for generating an internal short circuit prediction of a battery cell. In one embodiment, the techniques involve receiving feature measurements of a plurality of cells, determining a snapshot moving average of the feature measurement of each of the plurality of cells based on a corresponding measurement window, determining a health indicator of each of the plurality of cells based on the respective snapshot moving averages, ranking a plurality of health indicators of the respective plurality of cells, wherein the plurality of health indicators is ranked by magnitude, determining a short circuit threshold value based on a second-ranked health indicator, and upon determining that a first-ranked health indicator exceeds the short circuit threshold value, generating a prediction of a short circuit in a cell corresponding to the first-ranked health indicator.

Abstract: Disclosed is a personal care composition comprising porous silica having an average diameter of 2 to 100 microns and lignin compound.

Abstract: A seal, a fluid assembly comprising same, and a fluid device. The seal comprises a body portion; first through holes are formed in the seal; the seal further has first sealing portions corresponding to the first through holes; there are at least two first through holes; each first sealing portion comprises a first extension portion and a second extension portion; the first extension portion and the second extension portion are located on opposite sides of the body portion; the first extension portion and the second extension portion extend from the body portion toward the first through holes; the distance between the first extension portion and the second extension portion is greater than the height of the body portion; and the first extension portion is a closed raised structure, and the second extension portion is also a closed raised structure.

Abstract: A semiconductor structure and the manufacturing method thereof are disclosed. An exemplary semiconductor structure includes a first source/drain contact and a second source/drain contact spaced apart by a gate structure, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, a conductive feature disposed in the etch stop layer and in direct contact with the first source/drain contact and the second source/drain contact, a dielectric layer over the etch stop layer, and a contact via extending through the dielectric layer and electrically connected to the conductive feature. By providing the conductive feature, a number of metal lines in an interconnect structure of the semiconductor structure may be advantageously reduced.

Abstract: A drive device includes a housing, a motor and a transmission assembly; the housing includes a first casing and a second casing; the first casing includes a first protruding portion and a second protruding portion; the second casing includes a third protruding portion; the transmission assembly includes a first-stage worm, a second-stage worm and a transmission wheel; the first-stage worm includes a first tooth-shaped portion; the second-stage worm includes a second tooth-shaped portion; the first protruding portion and the second protruding portion both limitedly cooperate with the second-stage worm; along the axial direction of the second tooth-shaped portion, the first protruding portion is located on one side of the second tooth-shaped portion; the second protruding portion is located on the other side of the second tooth-shaped portion; and the distance between the third protruding portion and the transmission wheel is within a preset range.