Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: An emissions control system for a motor vehicle that includes an internal combustion engine includes a first selective catalytic reduction (SCR) device and a reductant injector, The system further includes a model-based controller that is configured to calculate a target amount of reductant to inject to maintain a predetermined ratio between an amount of NH3 and an amount of NOx at the outlet of the first SCR device, and to send a command for receipt by the reductant injector to inject the calculated amount of reductant. The model-based controller is further configured to send a command for receipt by an engine controller to influence NOx production by the engine by modifying an engine operating parameter, based on a calculated target amount of NOx at the inlet of the first SCR device.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices are provided. The present disclosure provides a semiconductor device that includes a first fin structure and a second fin structure each extending from a substrate; a first gate segment over the first fin structure and a second gate segment over the second fin structure; a first isolation feature separating the first and second gate segments; a first source/drain (S/D) feature over the first fin structure and adjacent to the first gate segment; a second S/D feature over the second fin structure and adjacent to the second gate segment; and a second isolation feature also disposed in the trench. The first and second S/D features are separated by the second isolation feature, and a composition of the second isolation feature is different from a composition of the first isolation feature.

Abstract: An LPV/MPC engine control system is disclosed that includes an engine control unit connected to multiple sensors. The engine control unit receives, from the sensors, signals indicative of desired engine torque and engine torque output, and determines, from these signals, optimal engine control commands using a piecewise LPV/MPC routine. This routine includes: determining a nonlinear and a linear system model for the engine assembly, minimizing a control cost function in a receding horizon for the linear system model, determining system responses for the nonlinear and linear system models, determining if a norm of an error function between the system responses is smaller than a calibrated threshold, and if the norm is smaller than the predetermined threshold, applying the linearized system model in a next sampling time for a next receding horizon to determine the optimal control command. Once determined, the optimal control command is output to the engine assembly.

Abstract: A system, device and method are provided for continuously generating more than 0.01 watt of electrical energy by harnessing mechanical or kinetic energy from a reciprocating motion of a users torso during breathing. The reciprocating motion causes reciprocating lateral and medial translation of two chambers of the device housing. That reciprocating lateral and medial translation rotates a gear, which in turn, drives a dynamo to produce electrical energy. Since the conversion from the mechanical energy of the spinning rod to power is direct, the energy-conversion efficiency may be up to 90% or higher. The device may further comprise one or more charging means for providing electrical energy to one or more peripheral electronic devices.

Abstract: An integrated circuit includes a substrate, an isolation feature disposed over the substrate, a fin extending from the substrate alongside the isolation feature such that the fin extends above the isolation feature, and a dielectric layer disposed over the isolation feature. A top surface of the dielectric layer is at a same level as a top surface of the fin or below a top surface of the fin by less than or equal to 15 nanometers.

Abstract: An automatic gain control circuit for controlling an LNA for inputting signals carrying packets, the automatic gain control circuit can perform a background calibration in the non-preamble time region of a first packet for pre-determining a gain adjustment to the LNA before the next preamble of a second packet arrives, so that the gain of the LNA can be adjusted immediately according to the pre-determined gain adjustment when the next preamble of the second packet arrives.

Abstract: Presented are model-based control systems for operating parallel hybrid powertrains, methods for making/using such systems, and motor vehicles with parallel hybrid powertrains and model-based torque and speed control capabilities. A method for controlling operation of a hybrid powertrain includes receiving a command signal for a hybrid powertrain operation associated with a driver input and a current operating mode of the powertrain. A desired output torque for executing the powertrain operation is then determined. The method determines if a speed differential between an engine speed of an engine and a torque converter output speed of a torque converter is less than a calibrated threshold; if so, the method responsively engages a clutch device to operatively connect the engine's output member to the transmission's input member. Engine torque is then coordinated with motor torque such that the sum of the engine and motor torques is approximately equal to the desired output torque.

Abstract: Systems and methods for activating select devices are described herein. More particularly, this specification relates to using structure specific service IDs (SSSIDs) when two devices that are part of a common ecosystem are deciding whether to establish a connection according to a Bluetooth protocol. The SSSID can be a unique identifier that can be included in packets that are transmitted in accordance with the standards defining the Bluetooth Low Energy (BLE) protocol. The SSSIDs can be generated and provided to select devices such that only the select devices that are in possession of the SSSID are able to communicate with each other. This advantageously eliminates spurious activation of unintended recipient devices by enabling them to ignore the packet if the SSSID is not recognized, thereby enabling the unintended recipient device to remain in a low power sleepy state.

Abstract: A semiconductor device includes an n-type FET device and a p-type FET device. The n-type FET device includes a first substrate region, a first gate stack, a first gate spacer over sidewalls of the first gate stack, and an n-type epitaxial feature in a source/drain (S/D) region of the n-type FET device. The p-type FET device includes a second substrate region, a second gate stack, a second gate spacer over sidewalls of the second gate stack, and a p-type epitaxial feature in an S/D region of the p-type FET device. A vertical distance between a bottom surface of the first gate spacer and a lowest point of an upper surface of the n-type epitaxial feature is greater than a vertical distance between a bottom surface of the second gate spacer and a lowest point of an upper surface of the p-type epitaxial feature.

Abstract: A method includes providing a structure that includes a substrate, a first gate structure and a second gate structure over the substrate, and a first source/drain (S/D) feature and a second S/D feature over the substrate. The first S/D feature is adjacent to the first gate structure, the second S/D feature is adjacent to the second gate structure, the first S/D feature is configured for an n-type transistor, and the second S/D feature is configured for a p-type transistor. The method further includes introducing a p-type dopant into both the first and the second S/D features. After the introducing of the p-type dopant, the method further includes performing an etching process to the first and the second S/D features, wherein the etching process etches the first S/D feature faster than it etches the second S/D feature.

Abstract: A method includes providing a structure having first and second fins over a substrate and oriented lengthwise generally along a first direction and source/drain (S/D) features over the first and second fins; forming an interlayer dielectric (ILD) layer covering the S/D features; performing a first etching process at least to an area between the S/D features, thereby forming a trench in the ILD layer; depositing a dielectric material in the trench; performing a second etching process to selectively recess the dielectric material; and performing a third etching process to selectively recess the ILD layer, thereby forming a contact hole that exposes the S/D features.

Abstract: An electrical system includes a rechargeable energy storage system (RESS) and a controller. The RESS includes first and second battery packs connected to a voltage bus, each pack having a respective plurality of battery cells and a corresponding cell balancing circuit. The RESS further includes switches that selectively connect or disconnect the packs to or from each other to achieve series and parallel modes. The controller executes a method by detecting a requested series to parallel mode transition. Responsive to a threshold imbalance being present in a state of charge or pack voltage of the packs relative to each other, the controller balances the state of charge/voltage using open/closed state control of the cell balancing circuits, and possibly a switching block having PWM-controlled switches and a circuit element. The controller may execute the requested mode transition upon balancing.

Abstract: A method includes forming an epitaxial source/drain (S/D) feature over a semiconductor layer, where the epitaxial S/D feature includes silicon (Si) and germanium (Ge), forming a trench to expose a portion of the epitaxial S/D feature, annealing the exposed portion of the epitaxial S/D feature, where the annealing forms at a top surface of the epitaxial S/D feature a first region having a first Ge concentration and a second region disposed below the first region having a second Ge concentration that is less than the first Ge concentration, oxidizing the first region, removing the oxidized first region, and forming an S/D contact in the trench over the second region.

Abstract: Presented are intelligent vehicle systems and control logic for predictive charge planning and powertrain control of electric-drive vehicles, methods for manufacturing/operating such systems, and electric-drive vehicles with smart charge planning and powertrain control capabilities. Systems and methods of AI-based predictive charge planning for smart electric vehicles use machine-learning (ML) driver models that draws on available traffic, location, and roadway map information to estimate vehicle speed and propulsion torque requirements to derive a total energy consumption for a given trip. Systems and methods of AI-based predictive powertrain control for smart hybrid vehicles use ML driver models with deep learning techniques to derive a drive cycle profile defined by a preview route with available traffic, geopositional, geospatial, and map data.

Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.

Abstract: A method includes forming a first trench in an isolation region; forming a second trench in a device region, wherein the device region is disposed adjacent to the isolation region and each of the first and second trenches is disposed between two metal gate structures; forming a first dielectric layer in the first and the second trenches; forming a second dielectric layer over and different from the first dielectric layer; removing a portion of the second dielectric layer from the first and the second trenches, leaving behind a remaining portion of the second dielectric layer in the first trench; removing a portion of the first dielectric layer formed over a bottom surface of the second trench; subsequent to removing the portion of the first dielectric layer, removing the remaining portion of second dielectric layer from the first trench; and forming contact features in the first and the second trenches.

Abstract: A computer-implemented method includes receiving historical pollution distribution data indicating a pollution distribution in a target area, determining a first searching path for a mobile pollution detecting device that prioritizes subareas in the target area that have not been recently searched relative to other subareas, determining a second searching path for the mobile pollution detecting device that prioritizes subareas in the target area that have a high measure of pollution relative to other subareas, determining whether an amount of the historical pollution distribution data exceeds a threshold amount, and transmitting a signal causing the mobile pollution detecting device to search the target area for pollution based on the first searching path when the amount of the historical pollution distribution data is less than the threshold amount or the second searching path when the amount of the historical pollution distribution data is greater than or equal to the threshold amount.

Abstract: The present application relates to a roof-greening grass carpet, a cultivation method thereof, and a method for one-step establishment of a turf using the same. Wherein the roof-greening grass carpet comprises a first filtering cotton layer, a moisturizing cotton layer, a second filtering cotton layer and a planting layer; the first filtering cotton layer, the moisturizing cotton layer, the second filtering cotton layer and the planting layer are arranged one after the other from the bottom up; a thickness of the first filtering cotton layer ranges from 0.8 mm to 5 mm; a thickness of the moisturizing cotton layer ranges from 3 mm to 10 mm; and a thickness of the second filtering cotton layer ranges from 0.8 mm to 5 mm; roots in the planting layer run through the second filtering cotton layer, and further root into the moisturizing cotton layer.

Abstract: A system, a computer readable storage medium, and a method for data quality control using a correlated sensor group includes selecting a sensor group, by at least one processor, according to a uniformity and a correlation with air pollution concentration data from a reference station, selecting a time series based on the correlation, generating a particle concentration model between the sensor group and the reference station, calculating a deviation in the particle concentration data from the particle concentration model, and recognizing outliers from the deviation as unacceptable data.