Abstract: A clean and rapid smelting method in an electric arc furnace with full scrap steel, is suitable for smelting process of 30-300 t electric arc furnace with full scrap steel. In the smelting process of the electric arc furnace with full scrap steel, different kinds of mediums are injected by an injection lance which is installed inside refractory material of sidewall at the bottom of the electric arc furnace in different stages of smelting. Carburization is utilized in molten pool to accelerate melting down and improve carbon content of the molten pool at the stage of recarburizing and fluxing. A reaction in the molten pool is intensified at the stage of high efficiency dephosphorization and deep denitrogenation, to enhance efficient dephosphorization and deep denitrification of the reaction in the molten pool, thereby accelerating the smelting speed of the electric arc furnace with full scrap steel, improving effect of dephosphorization and denitrification.

Abstract: A FinFET device structure is provided. The FinFET device structure includes a first gate structure formed over a fin structure, and a first capping layer formed over the first gate structure. The FinFET device structure includes a first etching stop layer formed over the first capping layer and the first gate structure, and a top surface and a sidewall surface of the first capping layer are in direct contact with the first etching stop layer.

Abstract: In an embodiment of the present disclosure, a method for modeling prediction of inhalable particles concentration is disclosed. In the method, at least one dispersal event is identified, and at least one accumulation event is identified based on the identified at least one dispersal event. Then a dispersal prediction model is generated based on the identified at least one dispersal event. Then at least one accumulation level of inhalable particles concentration is obtained for the at least one accumulation event. A change prediction model for the accumulation level is generated. Then a plurality of accumulation prediction models is generated.

Abstract: A system for monitoring operation of a vehicle includes a processing device including an interface configured to receive measurement data from sensing devices configured to measure parameters of a vehicle system. The processing device is configured to receive measurement data from each of the plurality of sensing devices, and in response to detection of a malfunction in the vehicle, input at least a subset of the measurement data to a machine learning classifier associated with a vehicle subsystem, the classifier configured to define a class associated with normal operation of the vehicle subsystem. The processing device is also configured to determine whether the subset of the measurement data belongs to the class, and based on at least a selected amount of the subset of the measurement data being outside of the class, output a fault indication, the fault indication identifying the vehicle subsystem as having a contribution to the malfunction.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: A system includes an electronic display panel that has a plurality of pixels configured to depict frames of image data. The electronic display also includes display driver circuitry configured to, for a first frame of image data representing first image content, modify a gate-to-source voltage of a transistor of a first pixel of the plurality of pixels to a content-dependent first gate-to-source voltage. Additionally, after modifying the gate-to-source voltage to the first gate-to-source voltage, the display driver circuitry is configured to program the first pixel by modifying the gate-to-source voltage to a gate-to-source programming voltage that differs from the first gate-to-source voltage and is based on image data associated with the pixel from the first frame of the image data. Furthermore, the display driver circuitry is configured to cause the plurality of pixels to emit light.

Abstract: The present disclosure relates to a method of analyzing a sample comprising a hydrophobic molecule. The method includes preparing an aqueous solution comprising the sample. The method also includes placing the solution in contact with a polypropylene substrate having a deactivated surface that reduces adsorption of the hydrophobic molecule relative to a polypropylene substrate that has not been deactivated. The method also includes analyzing the sample.

Abstract: Compositions containing Tricyclodecane Dimethanol (TCCDM) and at least a second component, wherein the composition is characterized in a gas chromatography (GC) analysis, wherein the TCDDM is eluted at a retention time ranging from 12.4 minutes to 13 minutes, the second component is eluted at a retention time ranging from 11.8 minutes to 12.4 minutes, and the ratio of the area of elution peaks indicating the second component compared to the area of the elution peaks of the TCCDM is between 0.001:1 and 0.04:1. Useful products of the composition include polymers and optical materials.

Abstract: The present disclosure provides a vector denoising method for the multicomponent seismic data, including: obtaining a wave vector of the multicomponent seismic data; calculating a first mean wave vector for the multicomponent seismic data by applying a first moving window, performing a median filtering for the first mean wave vector to obtain a true modulus of the ground roll, subtracting the wave vector of the ground roll from the multicomponent seismic data to obtain a vector time-series; performing a mean filtering for the vector time-series by using a second moving window to obtain a second mean wave vector, performing a median filtering and performing a median the median filtering within the same receiving line for the second mean wave vector to suppress the wave vector of the random noise in the vector time-series, thereby obtaining a wave vector of a purified effective signal.

Abstract: Presented are intelligent vehicle systems and control logic for predictive charge planning and powertrain control of electric-drive vehicles, methods for manufacturing/operating such systems, and electric-drive vehicles with smart charge planning and powertrain control capabilities. Systems and methods of AI-based predictive charge planning for smart electric vehicles use machine-learning (ML) driver models that draws on available traffic, location, and roadway map information to estimate vehicle speed and propulsion torque requirements to derive a total energy consumption for a given trip. Systems and methods of AI-based predictive powertrain control for smart hybrid vehicles use ML driver models with deep learning techniques to derive a drive cycle profile defined by a preview route with available traffic, geopositional, geospatial, and map data.

Abstract: A method includes forming a metal gate structure, wherein the metal gate structure includes a gate dielectric layer and a gate electrode; performing a surface treatment to a top surface of the metal gate structure, wherein the surface treatment converts a top portion of the gate electrode to an oxidation layer; forming a conductive layer above the gate electrode, wherein the forming of the conductive layer includes substituting oxygen in the oxidation layer with a metallic element; and forming a contact feature above the metal gate structure, wherein the contact feature is in direct contact with the conductive layer.

Abstract: An integrated system for art examination includes a power module, an information receiving and a storage module, an information processing module, a control module, a display module, a paper printing module, and a paper processing module; the information receiving and storage module is used to receive and transmit an examinees registration information, an examination room information and an on-site identity information to the information processing module; the information processing module is used to verify whether the examinees registration information is consistent with the on-site identity information and transmits a conclusion to the control module; the control module controls the display module, the paper printing module and the paper processing module; the display module is used to display information to guide an exam worker how to operate, and an input of the examinee's on-site identity information is completed on the display module through a human-computer interaction.

Abstract: A control system to control slip of a torque converter clutch includes a clutch plant model configured to predict a value of a parameter that relates to torque converter clutch slip as a function of clutch plant model inputs comprising commanded clutch pressure and of torque from the torque generative device. The control system also includes a model predictive controller configured to receive signals that allow determination of a desired value of the parameter that relates to torque converter clutch slip and a predicted value of the parameter that relates to torque converter clutch slip, receive a signal representing reported torque of the torque generative device, identify an optimal commanded clutch pressure value that will result in an optimal value of an objective function based on the clutch plant model, and provide a command signal to an actuator effective to control commanded clutch pressure to the torque converter clutch.

Abstract: An integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. The first transistor includes a channel region, a source region and a drain region. A conductive contact is coupled to the drain region of the first transistor. A second transistor that includes a channel region, a source region a drain region is adjacent to the first transistor. The gate of the second transistor is spaced from the gate of the first transistor. A conductive via passes through an insulation layer to electrically connect to the gate of the second transistor. An expanded conductive via overlays both the conductive contact and the conductive via to electrically connect the drain of the first transistor to the gate of the second transistor.

Abstract: An integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. The first transistor includes a channel region, a source region and a drain region. A conductive contact is coupled to the drain region of the first transistor. A second transistor that includes a channel region, a source region a drain region is adjacent to the first transistor. The gate of the second transistor is spaced from the gate of the first transistor. A conductive via passes through an insulation layer to electrically connect to the gate of the second transistor. An expanded conductive via overlays both the conductive contact and the conductive via to electrically connect the drain of the first transistor to the gate of the second transistor.

Abstract: A semiconductor device includes: an isolation insulating layer; fin structures protruding from the isolation insulating layer; gate structures, each having a metal gate and a cap insulating layer disposed over the metal gate; a first source/drain epitaxial layer and a second source/drain epitaxial layer disposed between two adjacent gate structures; and a first conductive contact disposed on the first source/drain epitaxial layer, and a second conductive contact disposed on the second source/drain epitaxial layer; a separation isolation region disposed between the first and second conductive contact; and an insulating layer disposed between the separation isolation region and the isolation insulating layer. The separation isolation region is made of a different material than the insulating layer.

Abstract: Semiconductor structures and methods for forming the same are provided. The method includes forming a dummy gate structure and forming a spacer on a lower portion of a sidewall of the dummy gate structure and exposing an upper portion of the sidewall of the dummy gate structure. The method further includes forming a dielectric layer covering the upper portion of the sidewall of the dummy gate structure exposed by the spacer and removing the dummy gate structure to form a tube-shaped trench. The method further includes removing a portion of the dielectric layer to form a cone-shaped trench and forming a gate structure in a bottom portion of the tube-shaped trench. The method further includes forming a hard mask structure in the cone-shaped trench and an upper portion of the tube-shaped trench, and an interface between the hard mask structure and the dielectric layer overlaps the spacer.

Abstract: Presented are battery pack voltage-switching (“V-switch”) systems, methods for making/operating such systems, and multi-pack, electric-drive motor vehicles with battery pack V-switch capabilities. A method for controlling operation of a vehicle includes a vehicle controller receiving a voltage switch signal to change a voltage output of the vehicle's battery system. The vehicle controller determines if a speed of a traction motor is less than a calibrated base speed; if so, the controller transmits a pack isolation signal to a power inverter to electrically disconnect the traction battery packs from the traction motor. The vehicle controller determines if a bus current of a DC bus is less than a calibrated bus current threshold; if so, the controller transmits an open signal to open one or more pack contactor switches and a close signal to close one or more pack contactor switches thereby causing the vehicle battery system to output the second voltage.

Abstract: Provided herein are antibodies that bind to the alpha subunit of an IL-7 receptor (IL-7R?). Also provided are uses of these antibodies in therapeutic applications, such as treatment of inflammatory diseases. Further provided are cells that produce the antibodies, polynucleotides encoding the heavy and/or light chain regions of the antibodies, and vectors comprising the polynucleotides.