Abstract: Provided is a writing implement capable of drawing lines using capillary action, wherein the width of the line can be freely adjusted while the line is being drawn and it is possible to draw lines of almost the same width at the beginning of the use of the writing implement as at the end of use. A felt-tip pen 1 is provided with an ink reservoir 11, a collector 17, and a core 29 for drawing by capillary action the ink that has been dispensed by the collector 17, dispensing the drawn ink from the tip, and adhering same to a paper surface. Even in repetitive writing, the rate of variability in the width of the lines drawn at the end of use with respect to the width of lines drawn at the beginning of use is 10% or less.

Abstract: A first mode in which to output analog electricity quantities of objects one by one independently to an A/D converter, a second mode in which to output none of the analog electricity quantities of the objects, a third mode in which to output none of the analog electricity quantities of the objects and cause the output to the A/D converter to be resistor, and a fourth mode in which to output to the A/D converter a plurality of the analog electricity quantities of the objects at the same time, are caused to be generated, thus acquiring the A/D conversion values of the objects individually when in the first mode, and detecting an anomaly of the A/D converter itself or a device connected to the A/D converter when in the second mode to the fourth mode.

Abstract: A memory device includes a first conductive layer, a second conductive layer, and a variable resistance layer provided between the first and second conductive layers. The variable resistance layer includes a first layer having a semiconductor or a first metal oxide containing a first metal, and a second layer provided between the first layer and the second conductive layer, having a second metal oxide containing a second metal, and having crystal grains that are not in contact with at least one of an end face of the second layer on a side of the first conductive layer or an end face of the second layer on a side of the second conductive layer.

Abstract: At a front surface of a silicon carbide base, an n?-type drift layer, a p-type base layer, a first n+-type source region, a second n+-type source region, and a trench that penetrates the first and the second n+-type source regions and the p-type base layer and reaches the n-type region are provided. In the trench, the gate electrode is provided via a gate insulating film, an interlayer insulating film is provided on the gate electrode, and a barrier metal is provided on the interlayer insulating film.

Abstract: A vertical MOSFET having a trench gate structure includes an n?-type drift layer and a p-type base layer formed by epitaxial growth. In the n?-type drift layer, an n-type region, an upper second p+-type region, a lower second p+-type region and a first p+-type region are provided. The lower second p+-type region is provided orthogonal to a trench, and a total mathematical area regions that are between the first p+-type region and the p-type base layer and that include the n-type region is at least two times a total mathematical area of regions that are between the first p+-type region and the p-type base layer and that include the upper second p+-type region.

Abstract: On a front surface of a semiconductor base, a first n?-type drift region and a second n-type drift region are provided. A gate trench is provided that penetrates an n+-type source region and p-type base region, and reaches the second n-type drift region. Between adjacent gate trenches, a contact trench is provided that penetrates the n+-type source region and the p-type base region, and reaches a p-type semiconductor region, through the second n-type drift region. A source electrode embedded in the contact trench is in contact with the p-type semiconductor region at a bottom and corners of the contact trench, and forms a Schottky junction with the second n-type drift region at side walls of the contact trench. A depth of the contact trench is a depth by which a mathematical area of a part thereof forming the Schottky junction is a predetermined mathematical area or greater.

Abstract: A semiconductor device includes: a first-conductivity-type drift layer including a first-conductivity-type impurity, vacancy-oxygen-hydrogen complex defects each caused by a vacancy, an oxygen atom, and a hydrogen atom, divacancy-and-vacancy-phosphorus complex defects, having a trap density level lower than a trap density level of the vacancy-oxygen-hydrogen complex defect, and third complex defects; a plurality of donor layers provided at different depths in a depth direction of the first-conductivity-type drift layer, wherein each of the plurality of donor layers includes donors caused by the vacancy-oxygen-hydrogen complex defects, and each of the plurality of donor layers has an impurity concentration distribution that includes a first portion with a maximum impurity concentration and a second portion with a concentration gradient in which the impurity concentration is reduced from the first portion to both main surfaces of the first-conductivity-type drift layer; and a second-conductivity-type semiconduc

Abstract: A ballpoint pen is provided in which the width of the drawing line can be changed, wherein responsiveness can be improved when distinguishing between drawing thin lines and thick lines. A ballpoint pen 1 provided at the pen tip side with a first writing part having a writing ball 25, wherein the ballpoint pen 1 is characterized by being provided with a writing part at the pen tip side with which it is possible to write a thicker line than the line written with the first writing part, only the first writing part being used when the writing weight is 1 g and the writing angle is 90°, and the second writing part being used when the writing weight is 200 g, and the writing angle is 40-90°.

Abstract: A switched reluctance motor system includes a switched reluctance motor, a rotor including a plurality of salient poles, a stator including a plurality of salient poles, coils of three phases wound around the salient poles of the stator, and an electronic control unit. The electronic control unit is configured to drive the switched reluctance motor in a pole configuration pattern of NSNSNS in which the salient poles of the stator that have different polarities are alternately arranged. The electronic control unit is configured to perform current waveform control when an excitation sound frequency of a given order coincides with a resonance frequency of the switched reluctance motor.

Abstract: At a front surface of a semiconductor base, an n?-type drift layer, a p-type base layer, an n++-type source region, an n++-type source region, a p-type base layer, and a trench that reaches the n?-type drift layer are provided. The silicon carbide semiconductor device has a recess provided between adjacent trenches. The recess has a side surface and a bottom surface that form an angle of 15° to 80°. A SBD part is provided at the bottom surface of the recess and forms a Schottky contact with the n?-type drift layer.

Abstract: On a front surface of a semiconductor base, an n?-type drift layer, a p-type base layer, an n++-type source region, and a gate trench and a contact trench penetrating the n++-type source region and the p-type base layer and reaching the n?-type drift layer are provided. The contact trench is provided separated from the gate trench. A Schottky metal is embedded in the contact trench and forms a Schottky contact with the n?-type drift layer at a side wall of the contact trench. An ohmic metal is provided at a bottom of the contact trench and forms an ohmic contact with the n?-type drift layer.

Abstract: A semiconductor device, including a first groove, a second groove and a first impurity region provided on a semiconductor substrate, a second impurity region provided in the first impurity region, a gate electrode provided in the first groove, a first insulating film provided between the first groove and the gate electrode, a second insulating film provided in the second groove, and a third insulating film provided astride tops of the first groove and the second groove. Each of the first and second insulating films has a lower half portion that is thicker than an upper half portion thereof. The lower half portions of the first and second insulating films are connected. The gate electrode has first and second portions thereof respectively contacting the lower and upper half portions of the first insulating film, a width of the first portion being narrower than a width of the second portion.

Abstract: Automatic verification of changes in a UML model made based on a change plan using a learning mode and a verification mode. In the learning mode, UML model differences are obtained between the UML model prior to the change and after the change, difference mapping is defined and a mapping metamodel is automatically extracted from the difference mapping. In the verification mode, planned difference mapping is created based on applying the mapping metamodel in the learning mode to a design change plan. Actual difference mapping based on the design change work is created and the planned difference mapping is compared to the actual difference mapping to see if additional changes to the mapping metamodel are needed.

Abstract: A memory device includes a first conductive layer, a second conductive layer, and a variable resistance layer provided between the first and second conductive layers. The variable resistance layer includes a first layer having a semiconductor or a first metal oxide containing a first metal, and a second layer provided between the first layer and the second conductive layer, having a second metal oxide containing a second metal, and having crystal grains that are not in contact with at least one of an end face of the second layer on a side of the first conductive layer or an end face of the second layer on a side of the second conductive layer.

Abstract: According to one or more embodiments, a memory device includes a first interconnection extending in a first direction, a plurality of second interconnections extending in a second direction intersecting the first direction, and a first resistance change film provided between the first interconnection and the second interconnections. The first resistance change film includes a first conductive layer having a first conductivity, and a second conductive layer provided between the first conductive layer and the plurality of second interconnections and having a second conductivity higher than the first conductivity.

Abstract: An active region through which current flows in a semiconductor device includes an n?-type silicon carbide epitaxial layer formed on a front surface of an n+-type silicon carbide semiconductor substrate; a p-type layer becoming a channel region; a trench formed so as to be in contact with a p-type layer and having an oxide film and a gate electrode embedded therein; a p+-type layer arranged beneath the trench and between trenches; an n?-type layer in contact with the p-type layer, a p+-type layer, and the trench, and arranged in contact with a p+-type layer or on a surface side of the semiconductor substrate; an n-type layer in contact with the n?-type silicon carbide epitaxial layer and the p+-type layer, and having an impurity concentration higher than that of the n?-type layer and that of the n?-type silicon carbide epitaxial layer.

Abstract: A first mode in which to output analog electricity quantities of objects one by one independently to an A/D converter, a second mode in which to output none of the analog electricity quantities of the objects, a third mode in which to output none of the analog electricity quantities of the objects and cause the output to the A/D converter to be resistor, and a fourth mode in which to output to the A/D converter a plurality of the analog electricity quantities of the objects at the same time, are caused to be generated, thus acquiring the A/D conversion values of the objects individually when in the first mode, and detecting an anomaly of the A/D converter itself or a device connected to the A/D converter when in the second mode to the fourth mode.

Abstract: A method of manufacturing a semiconductor device, where the device includes a donor layer that is obtained by changing a crystal defect formed in a first-conduction-type drift layer by proton radiation into a donor and in which the donor layer has an impurity concentration distribution including a first portion with a maximum impurity concentration and a second portion with a concentration gradient in which the impurity concentration is reduced from the first portion to both surfaces of the first-conduction-type drift layer. The method includes performing proton radiation for a first-conduction-type semiconductor substrate which will be the first-conduction-type drift layer to form a crystal defect in the first-conduction-type semiconductor substrate; and performing a heat treatment at a temperature equal to or higher than 300° C. and equal to or lower than 450° for one minute to 300 minutes to change the crystal defect into a donor.

Abstract: A method for producing a semiconductor device includes implanting protons from a rear surface of a semiconductor substrate of a first conductivity type, and after the implanting protons, forming a first semiconductor region of the first conductivity type having a impurity concentration higher than that of the semiconductor substrate by performing an annealing process for the semiconductor substrate in an annealing furnace. The forming a first semiconductor region includes substituting oxygen gas for nitrogen gas in a normal pressure atmosphere, thereby reducing a partial pressure of the oxygen in the annealing furnace, and after the subtracting oxygen gas, performing the annealing process in the annealing furnace with a hydrogen gas atmosphere in a range of 300° C. to 450° C. The hydrogen gas atmosphere includes a volume concentration of hydrogen in a range of 6% to 30%.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, first to fourth semiconductor regions and a first insulating film. The second electrode includes first, second, and third electrode regions. The first semiconductor region includes first, second, third, fourth, and fifth partial regions. The first partial region is separated from the first electrode. The second partial region is separated from the first electrode region. The fourth partial region is separated from the second electrode region. The second semiconductor region includes sixth, seventh, eighth and ninth partial regions. The third semiconductor region is connected to the second semiconductor region. The fourth semiconductor region is electrically connected to the second electrode. The fourth semiconductor region includes tenth, eleventh, and twelfth partial regions. The first insulating film is provided between the first, third, and fourth semiconductor regions.