Abstract: A semiconductor device includes a semiconductor substrate having an active region in which a main switching element structure is formed, a current sense region in which a sense switching element structure is formed, and a peripheral region located around the active region and the current sense region. The semiconductor substrate is a 4H-SiC substrate having an off angle in a <11-20> direction. The current sense region is disposed in a range where the active region is not present when viewed along the <1-100> direction.

Abstract: A switching element includes a semiconductor substrate having: an n-type drift region in contact with each of gate insulating films on a bottom surface and side surfaces of each of the trenches; a p-type body region in contact with the gate insulating films on the side surfaces of each of the trenches at a position above the n-type drift region; an n-type source region in contact with the gate insulating films on the side surfaces of each of the trenches at a position above the p-type body region, the n-type source region being separated away from the n-type drift region by the p-type body region; plurality of p-type bottom regions each of which is located under a corresponding one of the trenches and located away from a corresponding one of the gate insulating films; and a p-type connection region that connects the p-type bottom regions and the p-type body region.

Abstract: Provided is a method of preparing a medical hydrogel derived from a chitosan derivative containing aldonic acid bound by dehydration condensation to an amino group of a glucosamine unit of chitosan, the method including placing an aqueous solution containing the chitosan derivative in a mold having a predetermined shape, and then subjecting the aqueous solution to high-pressure steam sterilization, to obtain a sterile medical hydrogel having the predetermined shape. The resulting medical hydrogel can be used as a wound dressing for use in the treatment of wound surfaces of cut wounds, lacerated wounds, contused wounds, burns, bedsores, and the like.

Abstract: A silicon carbide semiconductor device includes an electric field relaxation layer disposed in a drift layer. The electric field relaxation layer includes a first region having a second conductivity type and disposed at a position deeper than trenches, and a second region having the second conductivity type and disposed between the adjacent trenches to be away from a side surface of each of the adjacent trenches. Each of the first region and the second region is made of an ion implantation layer. The electric field relaxation layer further includes a double implantation region in which the first region and the second region overlap with each other, and the electric field relaxation layer has a peak of a second conductivity type impurity concentration in the double implantation region.

Abstract: A method for manufacturing a power storage module includes: a placing step of placing an electrode laminate on a restraint member so that a laminating direction runs along a vertical direction; a connecting step of connecting a first connection part so that a connecting portion of a second connection part with respect to a connected part is positioned on an upper side in the vertical direction than an opening; a supplying step of connecting a distal end part of a supply pipe for an electrolytic solution to the second connection part, and supplying the electrolytic solution to a space; and a conveying step of removing a recessed part of the supply pipe from the second connection part, and conveying a cell stack placed on the restraint member in a state in which the opening is connected to the first connection part.

Abstract: An image forming apparatus includes an image forming portion that forms an image on a medium, a casing that houses the image forming portion, a power operating portion for use in switching on and off the main power source of the image forming apparatus, and a touch operation portion for use in inputting operations on the image forming apparatus. Assuming that a direction in which the casing faces a user when the touch operation portion is used is a front-to-back direction, the power operating portion is disposed at a one side in a lateral direction crossing the front-to-back direction at a front of the casing in the front-to-back direction, and the touch operation portion is disposed at an other side at the front of the casing in the front-to-back direction.

Abstract: A silicon carbide semiconductor device includes an electric field relaxation layer disposed in a drift layer. The electric field relaxation layer includes a first region having a second conductivity type and disposed at a position deeper than trenches, and a second region having the second conductivity type and disposed between the adjacent trenches to be away from a side surface of each of the adjacent trenches. Each of the first region and the second region is made of an ion implantation layer. The electric field relaxation layer further includes a double implantation region in which the first region and the second region overlap with each other, and the electric field relaxation layer has a peak of a second conductivity type impurity concentration in the double implantation region.

Abstract: In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.

Abstract: A semiconductor device includes a semiconductor substrate, a top electrode in contact with a top surface of the semiconductor substrate, a bottom electrode in contact with a bottom surface of the semiconductor substrate, and an oxide film in contact with the top surface of the semiconductor substrate. The semiconductor substrate includes an element region and an outer peripheral region. The element region is a region where the top electrode is in contact with the top surface of the semiconductor substrate. The outer peripheral region is a region where the oxide film is in contact with the top surface of the semiconductor substrate, and is located between the element region and an outer peripheral end surface of the semiconductor substrate. The element region includes a semiconductor element connected between the top electrode and the bottom electrode. The outer peripheral region includes surface high-voltage-breakdown regions, deep high-voltage-breakdown regions, and a drift region.

Abstract: An image forming apparatus includes an image forming portion that forms an image on a medium, a casing that houses the image forming portion, a power operating portion for use in switching on and off the main power source of the image forming apparatus, and a touch operation portion for use in inputting operations on the image forming apparatus. Assuming that a direction in which the casing faces a user when the touch operation portion is used is a front-to-back direction, the power operating portion is disposed at a one side in a lateral direction crossing the front-to-back direction at a front of the casing in the front-to-back direction, and the touch operation portion is disposed at an other side at the front of the casing in the front-to-back direction.

Abstract: Provided is an apparatus for producing a joined-resin product in which two or more resin members are joined. The apparatus includes: a surface treatment mechanism comprising an electrode unit generating ionized gas, and a member holding mechanism arranged at a position separated from the electrode unit by a space and holding the resin member, the surface treatment mechanism activating a surface to be joined of the resin member held by the member holding mechanism, by the ionized gas generated by the electrode unit; and a joining mechanism bonding the two or more resin members together where at least one of surfaces to be joined facing each other is activated by the surface treatment mechanism, at the respective surfaces to be joined.

Abstract: A recording apparatus includes a carriage configured to move in a width direction intersecting a medium transport direction, a recording head mounted on the carriage, a liquid storage section configured to store a liquid to be supplied to the recording head, the liquid storage section including an injection port configured to receive the liquid from a refill container and a liquid-level visual-check section through which a liquid level of the liquid is visually checked, and a display section configured to accept various setting operations, in which the liquid-level visual-check section and the display section are disposed on an apparatus front surface side, and the display section is disposed above the liquid-level visual-check section.

Abstract: A light-emitting device includes a substrate, a light-emitting element, and a resin material. The light-emitting element is disposed on the substrate. The resin material is made of a translucent thermosetting resin disposed at a peripheral area of the light-emitting element. The resin material has a plurality of closed spaces, and each of the plurality of closed spaces holds a resin body.

Abstract: A semiconductor device includes a cell section having a plurality of gate structures, and an outer peripheral section surrounding the cell section. The cell section includes a semiconductor substrate, the plurality of gate structures, a first electrode and a second electrode. The cell section and the outer peripheral section includes a protective film made of a material having a thermal conductivity lower than that of the first electrode. The protective film extends from the outer peripheral section to an outer edge portion of the cell section adjacent to the outer peripheral section and covers a portion of the first electrode adjacent to the outer peripheral section.

Abstract: A recording apparatus includes a carriage configured to move in a width direction intersecting a medium transport direction, a recording head mounted on the carriage, a liquid storage section configured to store a liquid to be supplied to the recording head, the liquid storage section including an injection port configured to receive the liquid from a refill container and a liquid-level visual-check section through which a liquid level of the liquid is visually checked, and a display section configured to accept various setting operations, in which the liquid-level visual-check section and the display section are disposed on an apparatus front surface side, and the display section is disposed above the liquid-level visual-check section.

Abstract: An image pickup apparatus in which noise caused by global shutter driving of an image pickup device can be suppressed. The image pickup apparatus comprises an image pickup device including pixels each including a photoelectric conversion part that generates a charge by photoelectric conversion and charge storage parts that are connected to the photoelectric conversion part and store a charge transferred from the photoelectric conversion part, and a controller configured to control to switch a driving mode of the image pickup device according to exposure setting, wherein the driving mode includes a first mode in which the charge is transferred from the photoelectric conversion part to the charge storage part in multiple transfers in one frame period, and a second mode in which the charge is transferred from the photoelectric conversion part to the charge storage part only once in one frame period.

Abstract: A semiconductor device includes a semiconductor element having a substrate, a drift layer, a base region, a source region, trench gate structures, an interlayer insulating film, a source electrode, and a drain electrode. The substrate is made of silicon carbide. The drift layer is disposed on the substrate and has an impurity concentration lower than the substrate. The base region is made of silicon carbide and disposed on the drift layer. The source region is made of silicon carbide having an impurity concentration higher than the drift layer. Each trench gate structure has a gate trench, a gate insulating film, and a gate electrode. The interlayer insulating film covers the gate electrode and the gate insulating film. The source electrode is in ohmic-contact with the source region. The drain electrode is disposed on a rear surface of the substrate.

Abstract: A battery has a separator, a positive electrode active material layer, a positive electrode side current collector, an adhesive layer, a negative electrode side current collector, and a negative electrode active material layer, in that order. The negative electrode side current collector has a first through-holes that are provided at a non-formation portion at which the negative electrode active material layer is not formed, and a second through-holes that are provided at the region where the negative electrode active material layer is formed. A gap is provided between the adhesive layer and the negative electrode side current collector. The gap is provided so as to communicate the first through-hole and the second through-hole.

Abstract: A power storage module comprises a plurality of bipolar electrodes, an outermost positive electrode, an outermost negative electrode, a first sealing part, a second sealing part, an inner sealing part, a first insulating member, a second insulating member, and an inner insulating member. At a periphery of each positive electrode current-collecting foil, a positive-electrode-free portion is formed, and at a periphery of each negative electrode current-collecting foil, a negative-electrode-free portion is formed. The first insulating member includes a first outer insulating part, the second insulating member includes a second outer insulating part, and the inner insulating member includes an inner insulating part. Each of a thickness of the first outer insulating part and a thickness of the second outer insulating part is more than a thickness of the inner insulating part.