Abstract: A semiconductor device includes; a schottky diode; a semiconductor substrate that includes a first surface and a second surface opposite to the first surface; a schottky electrode that is placed on the first surface and schottky-contacts to the semiconductor substrate; a first electrode placed on the schottky electrode; and a second electrode that is placed on the second surface and is connected to the semiconductor substrate. The schottky electrode is made of a metal material that is a columnar crystal; and a content of carbon on the schottky electrode is less than 6×1019 cm?3 in at least a part of an area of the schottky electrode.

Abstract: A semiconductor device includes a semiconductor substrate having an active region in which a main switching element structure is formed, a current sense region in which a sense switching element structure is formed, and a peripheral region located around the active region and the current sense region. The semiconductor substrate is a 4H-SiC substrate having an off angle in a <11-20>direction. The current sense region is disposed in a range where the active region is not present when viewed along the <1-100>direction.

Abstract: A recording apparatus includes a carriage configured to move in a width direction intersecting a medium transport direction, a recording head mounted on the carriage, a liquid storage section configured to store a liquid to be supplied to the recording head, the liquid storage section including an injection port configured to receive the liquid from a refill container and a liquid-level visual-check section through which a liquid level of the liquid is visually checked, and a display section configured to accept various setting operations, in which the liquid-level visual-check section and the display section are disposed on an apparatus front surface side, and the display section is disposed above the liquid-level visual-check section.

Abstract: A recording apparatus includes a carriage configured to move in a width direction intersecting a medium transport direction, a recording head mounted on the carriage, a liquid storage section configured to store a liquid to be supplied to the recording head, the liquid storage section including an injection port configured to receive the liquid from a refill container and a liquid-level visual-check section through which a liquid level of the liquid is visually checked, and a display section configured to accept various setting operations, in which the liquid-level visual-check section and the display section are disposed on an apparatus front surface side, and the display section is disposed above the liquid-level visual-check section.

Abstract: A recording apparatus includes a carriage configured to move in a width direction intersecting a medium transport direction, a recording head mounted on the carriage, a liquid storage section configured to store a liquid to be supplied to the recording head, the liquid storage section including an injection port configured to receive the liquid from a refill container and a liquid-level visual-check section through which a liquid level of the liquid is visually checked, and a display section configured to accept various setting operations, in which the liquid-level visual-check section and the display section are disposed on an apparatus front surface side, and the display section is disposed above the liquid-level visual-check section.

Abstract: A light-emitting device includes a substrate, an electrode, a light-emitting element, a variable light absorbing layer, and a sealing body. The electrode is formed on the substrate. The light-emitting element is disposed on the substrate and electrically connected to the electrode. The variable light absorbing layer is formed so as to cover the electrode on the substrate. The variable light absorbing layer contains a plurality of metal oxide particles that change a light absorption property by irradiation with an ultraviolet light. The sealing body is formed on the substrate so as to seal the light-emitting element. The sealing body has translucency to a light emitted from the light-emitting element.

Abstract: A light-emitting device having high output and high contrast with simple configuration is provided. The light-emitting device includes a substrate, a light-emitting element disposed on the substrate, a light-transmitting member disposed on the light-emitting element, and a covering body disposed on the substrate so as to surround the light-transmitting member and cover a side surface of the light-transmitting member. The covering body has a particle group including a plurality of metal oxide particles having a light scattering property and dispersed in the covering body, and the metal oxide particles existing in the vicinity of the side surface of the covering body have a portion having a bandgap smaller than that of other portions in each particle.

Abstract: In order to improve linearity characteristics in synthesis processing for expanding a dynamic range, an image pickup apparatus comprising an AD conversion unit for performing AD conversion of input signals by comparing a first ramp signal or a second ramp signal; a first synthesis unit for synthesizing a first signal AD converted using the first ramp signal and a second signal AD converted using the second ramp signal; a first correction unit for correcting a level difference between the first signal and the second signal when the first signal and the second signal are synthesized; an amplifier for amplifying pixel signals by different gains; a second synthesis unit for synthesizing the signals amplified by the different gains; and a second correction unit for correcting a level difference between the signals amplified by the different gains when the signals amplified by the different gains are synthesized.

Abstract: In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.

Abstract: A semiconductor device including a semiconductor element is provided. The semiconductor element includes a saturation current suppression layer formed above a drift layer and including electric field block layers arranged in a stripe manner and JFET portions arranged in a stripe manner. The electric field block layers and the JFET portions are alternately arranged. The semiconductor element includes trench gate structures. A longer direction of the trench gate structure intersects with a longer direction of the electric field block layer and a longer direction of JFET portion. The JFET portion includes a first layer having a first conductivity type impurity concentration larger than the drift layer and a second layer formed above the first layer and having a first conductivity type impurity concentration smaller than the first layer.

Abstract: A silicon carbide semiconductor device includes a substrate, a drift layer disposed above the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a gate trench formed deeper than the base region from a surface of the source region, a gate insulating film covering an inner wall surface of the gate trench, a gate electrode disposed on the gate insulating film, an interlayer insulating film covering the gate electrode and the gate insulating film and having a contact hole, a source electrode brought in ohmic contact with the source region through the contact hole, and a drain electrode disposed to a rear surface of the substrate. The source region has a lower impurity concentration on a side close to the base region than on a surface side brought in ohmic contact with the source region.

Abstract: An image forming apparatus includes an image forming portion that forms an image on a medium, a casing that houses the image forming portion, a power operating portion for use in switching on and off the main power source of the image forming apparatus, and a touch operation portion for use in inputting operations on the image forming apparatus. Assuming that a direction in which the casing faces a user when the touch operation portion is used is a front-to-back direction, the power operating portion is disposed at a one side in a lateral direction crossing the front-to-back direction at a front of the casing in the front-to-back direction, and the touch operation portion is disposed at an other side at the front of the casing in the front-to-back direction.

Abstract: A semiconductor device includes a cell section having a plurality of gate structures, and an outer peripheral section surrounding the cell section. The cell section includes a semiconductor substrate, the plurality of gate structures, a first electrode and a second electrode. The cell section and the outer peripheral section includes a protective film made of a material having a thermal conductivity lower than that of the first electrode. The protective film extends from the outer peripheral section to an outer edge portion of the cell section adjacent to the outer peripheral section and covers a portion of the first electrode adjacent to the outer peripheral section.

Abstract: A power storage apparatus has a case accommodating an electrode assembly, and a release valve present in the wall of the case. The electrode assembly includes electrodes. A shielding member is arranged between the inner surface of the wall and the end surface of the electrode assembly. A point located in a center of the case in a front view of the case taken in the stacking direction of the electrodes and located in a center of a dimension of the electrode assembly in the stacking direction is a center point, and a region surrounded by a plane connecting the center point and a contour of the pressure release valve at a shortest distance is a three-dimensional region. The shielding member includes a shielding portion that entirely covers a cross section of the three-dimensional region along the end face of the electrode assembly.

Abstract: An imaging apparatus having a wide dynamic range and a stable black level without decreasing frame rate comprises a pixel unit including pixels, a read out unit for reading out the noise signal from each pixel and to amplify the noise signal by a first gain to generate a first noise signal, reads out the pixel signal and amplifies the pixel signal by the first gain and a second gain to generate a first and a second pixel signal, a first memory unit for storing a second noise signal generated by amplifying, by the second gain, the noise signal read out from a pixel of a predetermined row, and a subtraction unit for subtracting the first noise signal from the first pixel signal and to subtract the second noise signal stored in the first memory unit from the second pixel signal, while sequentially reading out signals from each pixel.

Abstract: A silicon carbide semiconductor device includes a substrate, a drift layer disposed above the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a gate trench formed deeper than the base region from a surface of the source region, a gate insulating film covering an inner wall surface of the gate trench, a gate electrode disposed on the gate insulating film, an interlayer insulating film covering the gate electrode and the gate insulating film and having a contact hole, a source electrode brought in ohmic contact with the source region through the contact hole, and a drain electrode disposed to a rear surface of the substrate. The source region has a lower impurity concentration on a side close to the base region than on a surface side brought in ohmic contact with the source region.

Abstract: A semiconductor device including a semiconductor element is provided. The semiconductor element includes a saturation current suppression layer formed above a drift layer and including electric field block layers arranged in a stripe manner and JFET portions arranged in a stripe manner. The electric field block layers and the JFET portions are alternately arranged. The semiconductor element includes trench gate structures. A longer direction of the trench gate structure intersects with a longer direction of the electric field block layer and a longer direction of JFET portion. The JFET portion includes a first layer having a first conductivity type impurity concentration larger than the drift layer and a second layer formed above the first layer and having a first conductivity type impurity concentration smaller than the first layer.

Abstract: A semiconductor device includes a semiconductor element having a substrate, a drift layer, a base region, a source region, trench gate structures, an interlayer insulating film, a source electrode, and a drain electrode. The substrate is made of silicon carbide. The drift layer is disposed on the substrate and has an impurity concentration lower than the substrate. The base region is made of silicon carbide and disposed on the drift layer. The source region is made of silicon carbide having an impurity concentration higher than the drift layer. Each trench gate structure has a gate trench, a gate insulating film, and a gate electrode. The interlayer insulating film covers the gate electrode and the gate insulating film. The source electrode is in ohmic-contact with the source region. The drain electrode is disposed on a rear surface of the substrate.

Abstract: An image sensor comprises: a pixel region including a plurality of microlenses arranged in a matrix, and a plurality of photoelectric conversion portions provided for each of the microlenses; a plurality of amplifiers that apply a plurality of different gains to signals output from the pixel region; and a scanning circuit that scans the pixel region so that a partial signal and an added signal are read out, the partial signal being a signal from some of the plurality of photoelectric conversion portions, and the added signal being a signal obtained by adding the signals from the plurality of photoelectric conversion portions.

Abstract: In order to improve linearity characteristics in synthesis processing for expanding a dynamic range, an image pickup apparatus comprising an AD conversion unit for performing AD conversion of input signals by comparing a first ramp signal or a second ramp signal; a first synthesis unit for synthesizing a first signal AD converted using the first ramp signal and a second signal AD converted using the second ramp signal; a first correction unit for correcting a level difference between the first signal and the second signal when the first signal and the second signal are synthesized; an amplifier for amplifying pixel signals by different gains; a second synthesis unit for synthesizing the signals amplified by the different gains; and a second correction unit for correcting a level difference between the signals amplified by the different gains when the signals amplified by the different gains are synthesized.