Abstract: A display substrate is provided. The display substrate includes a substrate (1), a first transistor (2) and a second transistor (3) on the substrate (1), directions of intrinsic threshold voltage shifts of the first transistor (2) and the second transistor (3) being opposite; and a shift adjustment structure (4) on the substrate (1). The shift adjustment structure (4) may be configured to input adjustment signals to the first transistor (2) and the second transistor (3) respectively to make threshold voltages of the first transistor (2) and the second transistor (3) shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively.

Abstract: The present disclosure relates to an element pickup device, a method for manufacturing the same and a method for using the same. The element pickup device includes: a first substrate and a second substrate oppositely disposed; a spacing part located between the first substrate and the second substrate, wherein the spacing part is spaced apart from each other to define a flow channel for liquid; and an element pickup part including an opening located in the second substrate and in communication with the flow channel.

Abstract: The disclosure relates to the technical field of display devices and discloses a display substrate, a splicing screen and a manufacturing method thereof. The display substrate includes a flexible substrate; a plurality of signal lines located at one side of the flexible substrate; a plurality of plating electrodes located at one side of the signal lines toward the flexible substrate and electrically connected to the signal lines in one-to-one correspondence; a plurality of first through holes in one-to-one correspondence to the plating electrodes and penetrating the flexible substrate and exposing the plating electrodes, the first through roles being filled with a conductive material inside; and a plurality of binding electrodes located at one side of the flexible substrate away from the signal lines and in one-to-one correspondence to the first through holes, the binding electrodes being electrically connected to corresponding plating electrode through conductive material in corresponding first through hole.

Abstract: The present disclosure provides a backlight source. The backlight source includes: a substrate, and a first conductive structure, a plurality of light emitting units, and a second conductive structure which are stacked on the substrate. The first conductive structure and the second conductive structure are respectively on two sides of the plurality of light emitting units in a direction perpendicular to the substrate, and the first conductive structure and the second conductive structure are configured to load a voltage for the plurality of light emitting units.

Abstract: A driving backplane includes a base, electroplating electrodes and driving electrodes. The base has first through holes in a sub-pixel region. The electroplating electrodes are disposed in the sub-pixel region, and at least a portion of each electroplating electrode is disposed within a respective one of the first through holes. The driving electrodes are disposed in the sub-pixel region and on a first side of the base, and each driving electrode is connected to a respective one of the electroplating electrodes.

Abstract: Disclosed are a transfer carrier and a manufacturing method thereof, and a method for transferring a light-emitting diode chip. The transfer carrier includes: a substrate having a plurality of via holes penetrating a thickness of the substrate, the substrate having a first surface and second surface which are opposite to each other; and thermoplastic structures filling corresponding ones of the via holes, one end of the thermoplastic structures protruding from the second surface of the substrate, and the other end covering a surrounding area on the first surface, of the corresponding via holes.

Abstract: An Organic Light-emitting Diode (OLED) display substrate, a method of forming the same and a display device are provided. The OLED display substrate includes: a driving thin film transistor located on a base substrate and configured to drive an OLED light-emitting unit to emit light; and a photosensitive thin film transistor located on the base substrate and configured to be capable of detecting light emitted by the OLED light-emitting unit and generating an electrical signal, at least a part of film layers of the photosensitive thin film transistor and at least a part of film layers of the driving thin film transistor are disposed at a same layer and made of a same material.

Abstract: A method for manufacturing a display substrate includes: fabricating a first functional structure on a first side of a common substrate, and fabricating a second functional structure on a second side of the common substrate; fabricating a via hole in an edge region of the common substrate; and fabricating a conductive connection portion in the via hole, a first end of the conductive connection portion on the first side extending out of the via hole and coupled to a first functional pattern in the first functional structure, and a second end of the conductive connection portion on the second side extending out of the via hole and coupled to a second functional pattern in the second functional structure. The method provided in embodiments of the present disclosure is applied to the manufacturing of a display substrate.

Abstract: The present disclosure provides a wiring structure, a preparation method thereof, and a display device. The wiring structure includes a substrate; a pre-arranged layer located on the substrate; and an electrode wiring covering the pre-arranged layer; wherein in the direction perpendicular to an extending direction of the electrode wiring and parallel to a plane on which the substrate is located, an orthographic projection of the pre-arranged layer on the substrate is located within an orthographic projection of the electrode wiring on the substrate, and a side surface of the pre-arranged layer is inclined relative to the plane on which the substrate is located.

Abstract: A display panel includes a base substrate, and thin film transistors positioned on the base substrate. Each thin film transistor includes a polysilicon layer. The display panel further includes a light-shielding layer for blocking ultraviolet (UV) light that is located at a side of the polysilicon layer away from the base substrate. An orthographic projection of the polysilicon layer on the substrate is in a range of an orthographic projection of the light-shielding layer on the substrate.

Abstract: The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.

Abstract: Provided are a display structure and a preparation method thereof, and a display apparatus. The display structure includes a flexible back plate and a display substrate which are stacked, the flexible back plate including a bonding electrode for bonding to an integrated circuit chip, and the flexible back plate being bent to form a bent portion on which the bonding electrode is located.

Abstract: A display substrate includes a drive substrate and a welding pad provided on the drive substrate and electrically connected with the drive substrate. The display substrate further includes an insulating construction layer provided on the welding pad. The insulating construction layer is provided with a groove for exposing the welding pad. A bonding material is accommodated in the groove, and a micro light emitting diode is electrically connected with the welding pad through the bonding material.

Abstract: The present disclosure provides a field of display technologies, and in particular, to a LTPS substrate and a fabricating method thereof, a thin film transistor thereof, an array substrate thereof, and a display device thereof. The LTPS substrate, able to be used for the fabrication of a thin film transistor, includes a light shielding layer, the light shielding layer mainly composed of amorphous silicon doped with a lanthanide element. The present disclosure mainly employs an amorphous silicon film layer doped with the lanthanide element as the light shielding layer of the LTPS substrate, which not only ensures the light shielding efficiency but also reduces the production process, and further prevents the occurrence of the H explosion problem due to H exuding during the ELA process.

Abstract: An oxide thin film transistor, an array substrate, and preparation methods thereof are disclosed. The method for preparing an oxide thin film transistor comprises a step of forming a pattern comprising an oxide semiconductor active layer on a substrate, wherein the step comprises: forming an amorphous oxide semiconductor thin film on the substrate; performing an excimer laser annealing, at least at a position in the amorphous oxide semiconductor thin film corresponding to a channel region of oxide semiconductor active layer to be formed, such that the amorphous oxide semiconductor material at the laser-annealed position is crystallized, to form a crystalline oxide semiconductor material; and forming the pattern comprising the oxide semiconductor active layer.

Abstract: A preparation method of a backplane includes: forming an insulating structure layer having a groove on a base substrate by a mask exposure process, the groove being used for accommodating a metal trace; and repeating a metal sub-layer forming step including an ashing process and a wet etching process multiple times to form the metal trace positioned in the groove.

Abstract: An array substrate, a method for fabricating the same and a display device are disclosed. The method for fabricating the array substrate includes: forming a pattern of a gate electrode, a pattern of a gate insulation layer and a pattern of a metal oxide semiconductor active layer on a base substrate; forming an etch stop layer; forming a pattern of a pixel electrode first, and then forming a pattern of a source electrode and a pattern of a drain electrode; wherein the pattern of the pixel electrode is connected to the pattern of the metal oxide semiconductor active layer through the pattern of the source electrode or the pattern of the drain electrode. The method can prevent the problem that the pattern of the pixel electrode failing to connect to the pattern of the source electrode or the pattern of the drain electrode.

Abstract: In embodiments of the present disclosure, there is provided a display substrate assembly including: a base substrate; a light shielding layer on the base substrate; and an active layer of a thin film transistor, above the base substrate. An orthographic projection of the active layer on the base substrate in a thickness direction of the base substrate is within an orthographic projection of the light shielding layer on the base substrate in the thickness direction of the base substrate, and the light shielding layer includes an ion-doped amorphous silicon layer. In embodiments of the present disclosure, there is also provided a method of manufacturing a display substrate assembly and a display apparatus including the display substrate assembly.

Abstract: An array substrate, manufacturing method thereof, and a display device according to some arrangements of the present disclosure include: a first transistor and a second transistor; an active layer of the second transistor is disposed on a side of the interlayer dielectric layer of the first transistor away from the substrate; an insulating layer is disposed between the interlayer dielectric layer of the first transistor and the active layer of the second transistor, and the insulating layer has an ability to block hydrogen.

Abstract: The present application provides a thin film transistor and a method of fabricating the same, an array substrate and a display device. The thin film transistor includes: a gate electrode; an active layer including a first portion made of polysilicon and a second portion made of amorphous silicon; a source electrode and a drain electrode; and an ohmic contact layer. The second portion of the active layer is in contact with the source electrode and the drain electrode through the ohmic contact layer.